CH410010A - Process for the production of the purest gallium phosphide or gallium arsenide - Google Patents

Process for the production of the purest gallium phosphide or gallium arsenide

Info

Publication number
CH410010A
CH410010A CH1379660A CH1379660A CH410010A CH 410010 A CH410010 A CH 410010A CH 1379660 A CH1379660 A CH 1379660A CH 1379660 A CH1379660 A CH 1379660A CH 410010 A CH410010 A CH 410010A
Authority
CH
Switzerland
Prior art keywords
gallium
purest
production
phosphide
gallium arsenide
Prior art date
Application number
CH1379660A
Other languages
German (de)
Inventor
Plust Heinz-Guenther Dipl-Ing
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1310155D priority Critical patent/FR1310155A/fr
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1379660A priority patent/CH410010A/en
Priority to DEA36399A priority patent/DE1130421B/en
Publication of CH410010A publication Critical patent/CH410010A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1379660A 1960-12-09 1960-12-09 Process for the production of the purest gallium phosphide or gallium arsenide CH410010A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1310155D FR1310155A (en) 1960-12-09
CH1379660A CH410010A (en) 1960-12-09 1960-12-09 Process for the production of the purest gallium phosphide or gallium arsenide
DEA36399A DE1130421B (en) 1960-12-09 1960-12-30 Process for the production of the purest gallium phosphide or gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1379660A CH410010A (en) 1960-12-09 1960-12-09 Process for the production of the purest gallium phosphide or gallium arsenide

Publications (1)

Publication Number Publication Date
CH410010A true CH410010A (en) 1966-03-31

Family

ID=4395401

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1379660A CH410010A (en) 1960-12-09 1960-12-09 Process for the production of the purest gallium phosphide or gallium arsenide

Country Status (3)

Country Link
CH (1) CH410010A (en)
DE (1) DE1130421B (en)
FR (1) FR1310155A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1176102B (en) * 1962-09-25 1964-08-20 Siemens Ag Process for the crucible-free production of gallium arsenide rods from gallium alkyls and arsenic compounds at low temperatures
US3305385A (en) * 1963-06-27 1967-02-21 Hughes Aircraft Co Method for the preparation of gallium phosphide

Also Published As

Publication number Publication date
DE1130421B (en) 1962-05-30
FR1310155A (en) 1963-03-06

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