CH399425A - Zonenschmelzverfahren - Google Patents

Zonenschmelzverfahren

Info

Publication number
CH399425A
CH399425A CH7040459A CH7040459A CH399425A CH 399425 A CH399425 A CH 399425A CH 7040459 A CH7040459 A CH 7040459A CH 7040459 A CH7040459 A CH 7040459A CH 399425 A CH399425 A CH 399425A
Authority
CH
Switzerland
Prior art keywords
melting process
zone melting
zone
melting
Prior art date
Application number
CH7040459A
Other languages
German (de)
English (en)
Inventor
Gardner Pfann William
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH399425A publication Critical patent/CH399425A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/005—Continuous growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Paper (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Processing Of Solid Wastes (AREA)
CH7040459A 1958-03-05 1959-03-05 Zonenschmelzverfahren CH399425A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US719216A US2926075A (en) 1958-03-05 1958-03-05 Continuous zone refining using cross-flow

Publications (1)

Publication Number Publication Date
CH399425A true CH399425A (de) 1965-09-30

Family

ID=24889217

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7040459A CH399425A (de) 1958-03-05 1959-03-05 Zonenschmelzverfahren

Country Status (7)

Country Link
US (1) US2926075A (en:Method)
BE (1) BE575802A (en:Method)
CH (1) CH399425A (en:Method)
DE (1) DE1242564B (en:Method)
FR (1) FR1217759A (en:Method)
GB (1) GB906010A (en:Method)
NL (2) NL112572C (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL248736A (en:Method) * 1959-02-27
US3101257A (en) * 1959-08-17 1963-08-20 Lawrence M Hagen Preparation of high purity silicon by decomposition of silicon nitride powder having a graphite target buried therein
GB977591A (en:Method) * 1960-01-20
US3043667A (en) * 1960-10-31 1962-07-10 Manning Bernard Production of ultra-pure silicon or germanium
US3336159A (en) * 1963-10-07 1967-08-15 Ncr Co Method for growing single thin film crystals
US3360406A (en) * 1965-12-03 1967-12-26 Bell Telephone Labor Inc Temperature gradient zone melting and growing of semiconductor material
US4196042A (en) * 1978-04-14 1980-04-01 E. I. Du Pont De Nemours And Company Corrugated interface zone refiner
US4255390A (en) * 1979-07-12 1981-03-10 E. I. Du Pont De Nemours And Company Corrugated interface zone refiner
US5161717A (en) * 1991-01-08 1992-11-10 Sematech, Inc. Spin casting of silicon wafers
US5133829A (en) * 1991-01-08 1992-07-28 Sematech, Inc. Single wafer regrowth of silicon
US5178840A (en) * 1991-01-08 1993-01-12 Sematech, Inc. Single wafer regrowth of silicon

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL97193C (en:Method) * 1953-12-08

Also Published As

Publication number Publication date
NL234568A (en:Method)
DE1242564B (de) 1967-06-22
US2926075A (en) 1960-02-23
BE575802A (fr) 1959-06-15
NL112572C (en:Method)
GB906010A (en) 1962-09-19
FR1217759A (fr) 1960-05-05

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