CH397007A - Vorrichtung mit einer als Oszillator oder Verstärker geschalteten Tunneldiode - Google Patents

Vorrichtung mit einer als Oszillator oder Verstärker geschalteten Tunneldiode

Info

Publication number
CH397007A
CH397007A CH1110861A CH1110861A CH397007A CH 397007 A CH397007 A CH 397007A CH 1110861 A CH1110861 A CH 1110861A CH 1110861 A CH1110861 A CH 1110861A CH 397007 A CH397007 A CH 397007A
Authority
CH
Switzerland
Prior art keywords
oscillator
amplifier
diode connected
tunnel diode
tunnel
Prior art date
Application number
CH1110861A
Other languages
German (de)
English (en)
Inventor
Albert Schmitz
Boudewijn Bollee
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH397007A publication Critical patent/CH397007A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H03B1/04—Reducing undesired oscillations, e.g. harmonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H03B7/143—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device and which comprises an element depending on a voltage or a magnetic field, e.g. varactor- YIG
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Bipolar Integrated Circuits (AREA)
CH1110861A 1960-09-28 1961-09-25 Vorrichtung mit einer als Oszillator oder Verstärker geschalteten Tunneldiode CH397007A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL256345A NL104321C (nl) 1960-09-28 1960-09-28 Inrichting met een tunneldiode

Publications (1)

Publication Number Publication Date
CH397007A true CH397007A (de) 1965-08-15

Family

ID=19752595

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1110861A CH397007A (de) 1960-09-28 1961-09-25 Vorrichtung mit einer als Oszillator oder Verstärker geschalteten Tunneldiode

Country Status (7)

Country Link
US (1) US3140452A (en:Method)
CH (1) CH397007A (en:Method)
DE (1) DE1273602B (en:Method)
FR (1) FR1301737A (en:Method)
GB (1) GB965703A (en:Method)
NL (1) NL104321C (en:Method)
SE (1) SE220253C1 (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3209282A (en) * 1962-05-16 1965-09-28 Schnitzler Paul Tunnel diode oscillator
US3343107A (en) * 1963-12-03 1967-09-19 Bell Telephone Labor Inc Semiconductor package
US3321604A (en) * 1964-02-03 1967-05-23 Sunbeam Corp Electronic oven
US3274459A (en) * 1964-05-07 1966-09-20 Sterzer Fred Low impedance coupled transmission line and solid state tunnel diode structure
US3308352A (en) * 1964-06-01 1967-03-07 Tektronix Inc Transmission line mounting structure for semiconductor device
US3418587A (en) * 1965-06-04 1968-12-24 American Electronic Lab High sensitivity and power signal detecting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1255899A (fr) * 1959-08-05 1961-03-10 Ibm Oscillateur et son procédé de fabrication
US3027501A (en) * 1959-09-29 1962-03-27 Bell Telephone Labor Inc Semiconductive device
US3040186A (en) * 1960-09-19 1962-06-19 Hewlett Packard Co High frequency trigger converters employing negative resistance elements

Also Published As

Publication number Publication date
US3140452A (en) 1964-07-07
NL256345A (en:Method) 1962-07-16
SE220253C1 (sv) 1968-04-30
NL104321C (nl) 1963-04-16
FR1301737A (fr) 1962-08-17
GB965703A (en) 1964-08-06
DE1273602B (de) 1968-07-25

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