CH387808A - Verfahren zum Herstellen einer in einem Schutzgehäuse untergebrachten, mindestens zwei nebeneinander einlegierte Metallelektroden aufweisenden Halbleiterkristallanordnung - Google Patents

Verfahren zum Herstellen einer in einem Schutzgehäuse untergebrachten, mindestens zwei nebeneinander einlegierte Metallelektroden aufweisenden Halbleiterkristallanordnung

Info

Publication number
CH387808A
CH387808A CH30461A CH30461A CH387808A CH 387808 A CH387808 A CH 387808A CH 30461 A CH30461 A CH 30461A CH 30461 A CH30461 A CH 30461A CH 387808 A CH387808 A CH 387808A
Authority
CH
Switzerland
Prior art keywords
accommodated
producing
another
protective housing
semiconductor crystal
Prior art date
Application number
CH30461A
Other languages
German (de)
English (en)
Inventor
Weissfloch Andreas
Frodl Otto
Hans Dr Rebstock
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH387808A publication Critical patent/CH387808A/de

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
CH30461A 1960-01-14 1961-01-10 Verfahren zum Herstellen einer in einem Schutzgehäuse untergebrachten, mindestens zwei nebeneinander einlegierte Metallelektroden aufweisenden Halbleiterkristallanordnung CH387808A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66638A DE1116826B (de) 1960-01-14 1960-01-14 Verfahren zum Herstellen einer in einem Schutzgehaeuse untergebrachten, mindestens zwei dicht nebeneinander in einer Ebene einlegierte Metallelektroden aufweisenden Halbleiterkristallanordnung

Publications (1)

Publication Number Publication Date
CH387808A true CH387808A (de) 1965-02-15

Family

ID=7498962

Family Applications (1)

Application Number Title Priority Date Filing Date
CH30461A CH387808A (de) 1960-01-14 1961-01-10 Verfahren zum Herstellen einer in einem Schutzgehäuse untergebrachten, mindestens zwei nebeneinander einlegierte Metallelektroden aufweisenden Halbleiterkristallanordnung

Country Status (4)

Country Link
CH (1) CH387808A (enrdf_load_stackoverflow)
DE (1) DE1116826B (enrdf_load_stackoverflow)
GB (1) GB916193A (enrdf_load_stackoverflow)
NL (1) NL259859A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235439B (de) * 1964-10-01 1967-03-02 Telefunken Patent Verfahren zum Herstellen einer Vielzahl von Zwischensockeln und Vorrichtung zum Durchfuehren des Verfahrens
JPS58169918A (ja) * 1982-03-31 1983-10-06 Hitachi Ltd ワイヤボンダ
DE19720847C2 (de) * 1997-05-17 2002-04-18 Daimler Chrysler Ag Vorrichtung zum Positionieren eines Drahtes und deren Verwendung

Also Published As

Publication number Publication date
NL259859A (enrdf_load_stackoverflow) 1900-01-01
DE1116826B (de) 1961-11-09
GB916193A (en) 1963-01-23

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