CH387808A - Method for producing a semiconductor crystal arrangement which is accommodated in a protective housing and has at least two metal electrodes alloyed next to one another - Google Patents

Method for producing a semiconductor crystal arrangement which is accommodated in a protective housing and has at least two metal electrodes alloyed next to one another

Info

Publication number
CH387808A
CH387808A CH30461A CH30461A CH387808A CH 387808 A CH387808 A CH 387808A CH 30461 A CH30461 A CH 30461A CH 30461 A CH30461 A CH 30461A CH 387808 A CH387808 A CH 387808A
Authority
CH
Switzerland
Prior art keywords
accommodated
producing
another
protective housing
semiconductor crystal
Prior art date
Application number
CH30461A
Other languages
German (de)
Inventor
Weissfloch Andreas
Frodl Otto
Hans Dr Rebstock
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH387808A publication Critical patent/CH387808A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
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    • H01L2224/45001Core members of the connector
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/4813Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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    • H01L2224/48505Material at the bonding interface
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
CH30461A 1960-01-14 1961-01-10 Method for producing a semiconductor crystal arrangement which is accommodated in a protective housing and has at least two metal electrodes alloyed next to one another CH387808A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66638A DE1116826B (en) 1960-01-14 1960-01-14 Method for producing a semiconductor crystal arrangement which is accommodated in a protective housing and has at least two metal electrodes alloyed close together in a plane

Publications (1)

Publication Number Publication Date
CH387808A true CH387808A (en) 1965-02-15

Family

ID=7498962

Family Applications (1)

Application Number Title Priority Date Filing Date
CH30461A CH387808A (en) 1960-01-14 1961-01-10 Method for producing a semiconductor crystal arrangement which is accommodated in a protective housing and has at least two metal electrodes alloyed next to one another

Country Status (4)

Country Link
CH (1) CH387808A (en)
DE (1) DE1116826B (en)
GB (1) GB916193A (en)
NL (1) NL259859A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235439B (en) * 1964-10-01 1967-03-02 Telefunken Patent Method for manufacturing a plurality of intermediate sockets and apparatus for carrying out the method
JPS58169918A (en) * 1982-03-31 1983-10-06 Hitachi Ltd Wire bonder
DE19720847C2 (en) * 1997-05-17 2002-04-18 Daimler Chrysler Ag Device for positioning a wire and its use

Also Published As

Publication number Publication date
GB916193A (en) 1963-01-23
NL259859A (en) 1900-01-01
DE1116826B (en) 1961-11-09

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