CH377786A - Method and device for the production of single-crystal rods - Google Patents

Method and device for the production of single-crystal rods

Info

Publication number
CH377786A
CH377786A CH5303657A CH5303657A CH377786A CH 377786 A CH377786 A CH 377786A CH 5303657 A CH5303657 A CH 5303657A CH 5303657 A CH5303657 A CH 5303657A CH 377786 A CH377786 A CH 377786A
Authority
CH
Switzerland
Prior art keywords
production
crystal rods
rods
crystal
Prior art date
Application number
CH5303657A
Other languages
German (de)
Inventor
Goorissen Jan
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH377786A publication Critical patent/CH377786A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH5303657A 1956-11-28 1957-11-25 Method and device for the production of single-crystal rods CH377786A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL212548 1956-11-28

Publications (1)

Publication Number Publication Date
CH377786A true CH377786A (en) 1964-05-31

Family

ID=19750816

Family Applications (1)

Application Number Title Priority Date Filing Date
CH5303657A CH377786A (en) 1956-11-28 1957-11-25 Method and device for the production of single-crystal rods

Country Status (6)

Country Link
US (1) US2956863A (en)
CH (1) CH377786A (en)
DE (1) DE1051806B (en)
FR (1) FR1196958A (en)
GB (1) GB827466A (en)
NL (2) NL212548A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1077187B (en) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Process for the production of single crystals from semiconducting materials
US3097068A (en) * 1959-05-29 1963-07-09 Union Carbide Corp Crystallization of pure silicon platelets
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
DE1191789B (en) * 1960-10-25 1965-04-29 Siemens Ag Method for drawing preferably single-crystal semiconductor rods
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod
US3251655A (en) * 1963-09-27 1966-05-17 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
DE1238450B (en) * 1964-06-04 1967-04-13 Consortium Elektrochem Ind Process for the production of stress-free and crack-free rods from high-purity boron from the melt
US4116642A (en) * 1976-12-15 1978-09-26 Western Electric Company, Inc. Method and apparatus for avoiding undesirable deposits in crystal growing operations
DE2928089C3 (en) * 1979-07-12 1982-03-04 Heraeus Quarzschmelze Gmbh, 6450 Hanau Composite crucibles for semiconductor technology purposes and processes for production
DE3005492C2 (en) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for the production of the purest single crystals by crucible pulling according to Czochralski
US4478676A (en) * 1982-09-07 1984-10-23 Litton Systems, Inc. Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials
SU1592414A1 (en) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Method and apparatus for growing profiled crystals of high-melting compounds
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2291083A (en) * 1942-07-28 Furnace construction
US2753280A (en) * 1952-05-01 1956-07-03 Rca Corp Method and apparatus for growing crystalline material
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2839436A (en) * 1955-04-19 1958-06-17 Texas Instruments Inc Method and apparatus for growing semiconductor crystals

Also Published As

Publication number Publication date
US2956863A (en) 1960-10-18
FR1196958A (en) 1959-11-27
NL212548A (en)
DE1051806B (en) 1959-03-05
GB827466A (en) 1960-02-03
NL103477C (en)

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