CH374120A - Method for doping a zone of a semiconductor body - Google Patents

Method for doping a zone of a semiconductor body

Info

Publication number
CH374120A
CH374120A CH7796059A CH7796059A CH374120A CH 374120 A CH374120 A CH 374120A CH 7796059 A CH7796059 A CH 7796059A CH 7796059 A CH7796059 A CH 7796059A CH 374120 A CH374120 A CH 374120A
Authority
CH
Switzerland
Prior art keywords
doping
zone
semiconductor body
semiconductor
Prior art date
Application number
CH7796059A
Other languages
German (de)
Inventor
Karl Dr Siebertz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH374120A publication Critical patent/CH374120A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Die Bonding (AREA)
CH7796059A 1958-09-15 1959-09-08 Method for doping a zone of a semiconductor body CH374120A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59838A DE1144850B (en) 1958-09-15 1958-09-15 Method for doping a region of a semiconductor body using an alloy mold

Publications (1)

Publication Number Publication Date
CH374120A true CH374120A (en) 1963-12-31

Family

ID=7493622

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7796059A CH374120A (en) 1958-09-15 1959-09-08 Method for doping a zone of a semiconductor body

Country Status (5)

Country Link
CH (1) CH374120A (en)
DE (1) DE1144850B (en)
FR (1) FR1232135A (en)
GB (1) GB881936A (en)
NL (1) NL242858A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180482B (en) * 1952-08-14 Basf Ag PROCEDURE FOR SEPARATING AND REGENERATION OF RODIUM-CONTAINING CATALYSTS FROM DISTILLATION RESIDUES OBTAINED FROM HYDROFORMYLATIONS.

Also Published As

Publication number Publication date
DE1144850B (en) 1963-03-07
NL242858A (en)
FR1232135A (en) 1960-10-05
GB881936A (en) 1961-11-08

Similar Documents

Publication Publication Date Title
CH396223A (en) Tool for permanently attaching a wire to a surface
CH330205A (en) Method for drawing a rod-shaped crystalline body, preferably a semiconductor body
CH415856A (en) Method for producing a pn junction in a semiconductor arrangement
CH365802A (en) Method for large-area contacting a silicon body
CH396224A (en) Method for contacting a semiconductor arrangement
CH373903A (en) Process for crucible-free zone pulling of semiconductor material
CH418640A (en) Process for curing epoxies
AT245040B (en) Method for producing a single-crystal semiconductor body
CH374868A (en) Method for electrolytic etching of a semiconductor body with a p-n junction
CH413682A (en) Method of winding a crimped yarn
AT274678B (en) Method for packing a good
CH387720A (en) Method for producing a thermoelectric component
CH414572A (en) Method of manufacturing a semiconducting element
CH367898A (en) Method of manufacturing semiconductor devices
CH401475A (en) Process for curing epoxies
CH373942A (en) Method for controlling the feeding of a tube mill
CH370805A (en) Method for manufacturing a turbine nozzle
CH450553A (en) Process for coating a semiconductor material
CH374120A (en) Method for doping a zone of a semiconductor body
CH403438A (en) Method of targeted doping
CH372384A (en) Method of manufacturing a semiconductor device
CH414019A (en) Method for manufacturing a semiconductor component
CH375799A (en) Method for producing a semiconductor body
CH385349A (en) Method of manufacturing a transistor
CH394398A (en) Method for doping a silicon crystal