CH338244A - p-n-Gleichrichter mit Mittelzone - Google Patents
p-n-Gleichrichter mit MittelzoneInfo
- Publication number
- CH338244A CH338244A CH338244DA CH338244A CH 338244 A CH338244 A CH 338244A CH 338244D A CH338244D A CH 338244DA CH 338244 A CH338244 A CH 338244A
- Authority
- CH
- Switzerland
- Prior art keywords
- rectifier
- central zone
- zone
- central
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H10P32/00—
-
- H10P95/50—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES41476A DE1012697B (de) | 1954-11-08 | 1954-11-08 | p-s-n- und p-i-n-Gleichrichter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH338244A true CH338244A (de) | 1959-05-15 |
Family
ID=7484001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH338244D CH338244A (de) | 1954-11-08 | 1955-11-01 | p-n-Gleichrichter mit Mittelzone |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH338244A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1012697B (cg-RX-API-DMAC10.html) |
| FR (1) | FR1140397A (cg-RX-API-DMAC10.html) |
| GB (1) | GB798359A (cg-RX-API-DMAC10.html) |
| NL (2) | NL104352C (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL239515A (cg-RX-API-DMAC10.html) * | 1958-06-18 | |||
| US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
| DE1093021B (de) * | 1959-01-24 | 1960-11-17 | Telefunken Gmbh | Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen |
-
0
- NL NL201810D patent/NL201810A/xx unknown
- NL NL104352D patent/NL104352C/xx active
-
1954
- 1954-11-08 DE DES41476A patent/DE1012697B/de active Pending
-
1955
- 1955-11-01 CH CH338244D patent/CH338244A/de unknown
- 1955-11-07 FR FR1140397D patent/FR1140397A/fr not_active Expired
- 1955-11-08 GB GB31951/55A patent/GB798359A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL201810A (cg-RX-API-DMAC10.html) | |
| NL104352C (cg-RX-API-DMAC10.html) | |
| DE1012697B (de) | 1957-07-25 |
| GB798359A (en) | 1958-07-16 |
| FR1140397A (fr) | 1957-07-19 |
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