CH326342A - Dispositif d'enregistrement d'informations - Google Patents
Dispositif d'enregistrement d'informationsInfo
- Publication number
- CH326342A CH326342A CH326342DA CH326342A CH 326342 A CH326342 A CH 326342A CH 326342D A CH326342D A CH 326342DA CH 326342 A CH326342 A CH 326342A
- Authority
- CH
- Switzerland
- Prior art keywords
- information recording
- recording device
- information
- recording
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
- H01G7/026—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric with ceramic dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/185—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using dielectric elements with variable dielectric constant, e.g. ferro-electric capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computing Systems (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Electrotherapy Devices (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR950301X | 1953-05-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH326342A true CH326342A (fr) | 1957-12-15 |
Family
ID=9477051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH326342D CH326342A (fr) | 1953-05-13 | 1954-05-06 | Dispositif d'enregistrement d'informations |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE533836A (fr) |
CH (1) | CH326342A (fr) |
DE (1) | DE950301C (fr) |
FR (1) | FR1097618A (fr) |
GB (1) | GB750867A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE550048A (fr) * | 1955-11-21 | |||
US3450966A (en) * | 1967-09-12 | 1969-06-17 | Rca Corp | Ferroelectric insulated gate field effect device |
-
0
- BE BE533836D patent/BE533836A/xx unknown
-
1953
- 1953-05-13 FR FR1097618D patent/FR1097618A/fr not_active Expired
-
1954
- 1954-05-06 CH CH326342D patent/CH326342A/fr unknown
- 1954-05-07 GB GB13373/54A patent/GB750867A/en not_active Expired
- 1954-05-09 DE DEI8634A patent/DE950301C/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE950301C (de) | 1956-10-04 |
BE533836A (fr) | |
GB750867A (en) | 1956-06-20 |
FR1097618A (fr) | 1955-07-07 |
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