CH302707A - Verfahren zur stellenweisen Veränderung der elektrischen Eigenschaften eines Halbleiterkörpers. - Google Patents

Verfahren zur stellenweisen Veränderung der elektrischen Eigenschaften eines Halbleiterkörpers.

Info

Publication number
CH302707A
CH302707A CH302707DA CH302707A CH 302707 A CH302707 A CH 302707A CH 302707D A CH302707D A CH 302707DA CH 302707 A CH302707 A CH 302707A
Authority
CH
Switzerland
Prior art keywords
places
changing
electrical properties
semiconductor body
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Incorporated Western E Company
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH302707A publication Critical patent/CH302707A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T13/00—Transmitting braking action from initiating means to ultimate brake actuator with power assistance or drive; Brake systems incorporating such transmitting means, e.g. air-pressure brake systems
    • B60T13/10—Transmitting braking action from initiating means to ultimate brake actuator with power assistance or drive; Brake systems incorporating such transmitting means, e.g. air-pressure brake systems with fluid assistance, drive, or release
    • B60T13/58—Combined or convertible systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60T—VEHICLE BRAKE CONTROL SYSTEMS OR PARTS THEREOF; BRAKE CONTROL SYSTEMS OR PARTS THEREOF, IN GENERAL; ARRANGEMENT OF BRAKING ELEMENTS ON VEHICLES IN GENERAL; PORTABLE DEVICES FOR PREVENTING UNWANTED MOVEMENT OF VEHICLES; VEHICLE MODIFICATIONS TO FACILITATE COOLING OF BRAKES
    • B60T17/00—Component parts, details, or accessories of power brake systems not covered by groups B60T8/00, B60T13/00 or B60T15/00, or presenting other characteristic features
    • B60T17/04—Arrangements of piping, valves in the piping, e.g. cut-off valves, couplings or air hoses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S164/00—Metal founding
    • Y10S164/04—Dental

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
CH302707D 1950-01-31 1951-01-04 Verfahren zur stellenweisen Veränderung der elektrischen Eigenschaften eines Halbleiterkörpers. CH302707A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US141512A US2750541A (en) 1950-01-31 1950-01-31 Semiconductor translating device

Publications (1)

Publication Number Publication Date
CH302707A true CH302707A (de) 1954-10-31

Family

ID=22496007

Family Applications (1)

Application Number Title Priority Date Filing Date
CH302707D CH302707A (de) 1950-01-31 1951-01-04 Verfahren zur stellenweisen Veränderung der elektrischen Eigenschaften eines Halbleiterkörpers.

Country Status (5)

Country Link
US (1) US2750541A (de)
BE (1) BE500536A (de)
CH (1) CH302707A (de)
FR (1) FR1030745A (de)
NL (2) NL88584C (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899556A (en) * 1952-10-17 1959-08-11 Apparatus for the treatment of substances
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
US2868988A (en) * 1955-12-22 1959-01-13 Miller William Method of reducing transient reverse current
NL113331C (de) * 1957-09-03
US3082162A (en) * 1960-10-24 1963-03-19 Bernard A Kulp Electron processing of semiconducting material
US3174882A (en) * 1961-02-02 1965-03-23 Bell Telephone Labor Inc Tunnel diode
NL276412A (de) * 1961-03-30
BE620882A (de) * 1961-05-08
US3401107A (en) * 1965-08-05 1968-09-10 Gen Electric Method of manufacturing semiconductor camera tube targets
NL302630A (de) * 1963-01-18 1900-01-01
GB1095412A (de) * 1964-08-26
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3323947A (en) * 1964-12-17 1967-06-06 Bell Telephone Labor Inc Method for making electrode connections to potassium tantalate-niobate
US3459603A (en) * 1966-01-12 1969-08-05 Us Air Force Method for preparing electroluminescent light sources
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3457632A (en) * 1966-10-07 1969-07-29 Us Air Force Process for implanting buried layers in semiconductor devices
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet
US3469308A (en) * 1967-05-22 1969-09-30 Philco Ford Corp Fabrication of semiconductive devices
US3667116A (en) * 1969-05-15 1972-06-06 Avio Di Felice Method of manufacturing zener diodes having improved characteristics
US3620945A (en) * 1970-01-19 1971-11-16 Texas Instruments Inc Methods of making a composite dielectric body
US3979272A (en) * 1974-07-18 1976-09-07 The United States Of America As Represented By The Secretary Of The Army Method of producing semiconductor devices with minority charge carriers having a long lifetime and devices produced thereby
US4330931A (en) * 1981-02-03 1982-05-25 Intel Corporation Process for forming metal plated regions and lines in MOS circuits
US4904616A (en) * 1988-07-25 1990-02-27 Air Products And Chemicals, Inc. Method of depositing arsine, antimony and phosphine substitutes
US4988640A (en) * 1988-07-25 1991-01-29 Air Products And Chemicals, Inc. Method of doping and implanting using arsine, antimony, and phosphine substitutes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
GB497034A (en) * 1936-06-13 1938-12-12 British Thomson Houston Co Ltd Improvements in and relating to dry rectifiers
NL47109C (de) * 1936-06-13
US2293248A (en) * 1941-06-10 1942-08-18 Fink Colin Garfield Element for photocells and rectifiers
US2462218A (en) * 1945-04-17 1949-02-22 Bell Telephone Labor Inc Electrical translator and method of making it

Also Published As

Publication number Publication date
US2750541A (en) 1956-06-12
BE500536A (de)
NL158460B (nl)
NL88584C (de)
FR1030745A (fr) 1953-06-16

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