CH295227A - Dispositif amplificateur électrique comprenant un corps de matériau semi-conducteur. - Google Patents
Dispositif amplificateur électrique comprenant un corps de matériau semi-conducteur.Info
- Publication number
- CH295227A CH295227A CH295227DA CH295227A CH 295227 A CH295227 A CH 295227A CH 295227D A CH295227D A CH 295227DA CH 295227 A CH295227 A CH 295227A
- Authority
- CH
- Switzerland
- Prior art keywords
- electrode
- emitting
- electrodes
- gold
- semiconductor material
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000013078 crystal Substances 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 238000012549 training Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH295227T | 1950-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH295227A true CH295227A (fr) | 1953-12-15 |
Family
ID=4488813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH295227D CH295227A (fr) | 1950-12-05 | 1950-12-05 | Dispositif amplificateur électrique comprenant un corps de matériau semi-conducteur. |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE499900A (enrdf_load_stackoverflow) |
| CH (1) | CH295227A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1155861B (de) * | 1957-01-02 | 1963-10-17 | Egyesuelt Izzolampa | Nadeltransistor mit einem Halbleiterkoerper aus einem Germaniumkristall und Verfahren zum Herstellen |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1070747B (enrdf_load_stackoverflow) * | 1959-12-10 | |||
| DE1005193B (de) * | 1951-10-12 | 1957-03-28 | Int Standard Electric Corp | Verfahren zur Herstellung von Kristallgleichrichtern mit negativem Widerstand |
| DE1071847B (de) * | 1956-03-07 | 1959-12-24 | Western Electric Company, Incorporated, New York, N. Y. (V. St. A.) | Verfahren zur Herstellung einer im wesentlichen nicht gleichrichtenden flächenhaften Elektrode an dem Halbleiterkörper einer Halbleiteranordnung durch Legierung |
-
0
- BE BE499900D patent/BE499900A/xx unknown
-
1950
- 1950-12-05 CH CH295227D patent/CH295227A/fr unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1155861B (de) * | 1957-01-02 | 1963-10-17 | Egyesuelt Izzolampa | Nadeltransistor mit einem Halbleiterkoerper aus einem Germaniumkristall und Verfahren zum Herstellen |
Also Published As
| Publication number | Publication date |
|---|---|
| BE499900A (enrdf_load_stackoverflow) | 1900-01-01 |
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