CH268668A - Procédé de fabrication d'éléments redresseurs. - Google Patents

Procédé de fabrication d'éléments redresseurs.

Info

Publication number
CH268668A
CH268668A CH268668DA CH268668A CH 268668 A CH268668 A CH 268668A CH 268668D A CH268668D A CH 268668DA CH 268668 A CH268668 A CH 268668A
Authority
CH
Switzerland
Prior art keywords
rectifying elements
manufacturing
manufacturing rectifying
elements
rectifying
Prior art date
Application number
Other languages
English (en)
Inventor
Telephone Et Radio S Standard
Original Assignee
Standard Telephone & Radio Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone & Radio Sa filed Critical Standard Telephone & Radio Sa
Publication of CH268668A publication Critical patent/CH268668A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
CH268668D 1945-05-12 1946-12-23 Procédé de fabrication d'éléments redresseurs. CH268668A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US593542A US2462917A (en) 1945-05-12 1945-05-12 Method of manufacturing rectifier elements
US605617A US2468131A (en) 1945-05-12 1945-07-17 Method of manufacturing rectifier elements

Publications (1)

Publication Number Publication Date
CH268668A true CH268668A (fr) 1950-05-31

Family

ID=27081729

Family Applications (1)

Application Number Title Priority Date Filing Date
CH268668D CH268668A (fr) 1945-05-12 1946-12-23 Procédé de fabrication d'éléments redresseurs.

Country Status (6)

Country Link
US (2) US2462917A (fr)
BE (3) BE474674A (fr)
CH (1) CH268668A (fr)
DE (1) DE846738C (fr)
FR (2) FR934443A (fr)
GB (1) GB610999A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1118887B (de) * 1959-04-13 1961-12-07 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
DE1160108B (de) * 1960-09-14 1963-12-27 Langbein Pfanhauser Werke Ag Verfahren zur Herstellung von Selen-Trockengleichrichtern auf einer glatten Traegerelektrode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB302177A (fr) * 1927-12-10 1929-12-12 Sueddeutsche Telefon-Apparate, Kabel- Und Drahtwerke, Aktiengesellschaft
NL53994C (fr) * 1937-06-25 1900-01-01
US2288318A (en) * 1937-12-29 1942-06-30 Du Pont Electroplating process
BE436338A (fr) * 1938-09-09
FR851651A (fr) * 1938-09-21 1940-01-12 Westinghouse Freins & Signaux Perfectionnements à la fabrication de dispositifs à conductibilité asymétrique
GB523216A (en) * 1938-12-28 1940-07-09 Westinghouse Brake & Signal Improvements relating to the manufacture of alternating current rectifiers
US2375355A (en) * 1940-05-17 1945-05-08 Bolidens Gruv Ab Selenium rectifier
US2391706A (en) * 1940-10-10 1945-12-25 Battelle Memorial Institute Method of forming blocking layers on selenium coated plates
US2406072A (en) * 1941-02-15 1946-08-20 Univ Ohio State Res Found Electrodeposition of metals and bath composition therefor
BE462161A (fr) * 1943-06-25

Also Published As

Publication number Publication date
DE846738C (de) 1952-08-18
US2468131A (en) 1949-04-26
BE467627A (fr)
BE476268A (fr)
BE474674A (fr)
US2462917A (en) 1949-03-01
FR934443A (fr) 1948-05-21
FR934441A (fr) 1948-05-21
GB610999A (en) 1948-10-22

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