CH258127A - Procédé de fabrication d'un élément à conductibilité électrique asymétrique. - Google Patents

Procédé de fabrication d'un élément à conductibilité électrique asymétrique.

Info

Publication number
CH258127A
CH258127A CH258127DA CH258127A CH 258127 A CH258127 A CH 258127A CH 258127D A CH258127D A CH 258127DA CH 258127 A CH258127 A CH 258127A
Authority
CH
Switzerland
Prior art keywords
manufacturing
electrical conductivity
asymmetric electrical
asymmetric
conductivity
Prior art date
Application number
Other languages
English (en)
Inventor
Telephone Et Radio S Standard
Original Assignee
Standard Telephone & Radio Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone & Radio Sa filed Critical Standard Telephone & Radio Sa
Publication of CH258127A publication Critical patent/CH258127A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Manufacture Of Motors, Generators (AREA)
  • Laminated Bodies (AREA)
CH258127D 1944-11-02 1947-03-15 Procédé de fabrication d'un élément à conductibilité électrique asymétrique. CH258127A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB21461/44A GB598589A (en) 1944-11-02 1944-11-02 Improvements in or relating to the manufacture of selenium rectifiers

Publications (1)

Publication Number Publication Date
CH258127A true CH258127A (fr) 1948-11-15

Family

ID=10163333

Family Applications (1)

Application Number Title Priority Date Filing Date
CH258127D CH258127A (fr) 1944-11-02 1947-03-15 Procédé de fabrication d'un élément à conductibilité électrique asymétrique.

Country Status (5)

Country Link
US (1) US2485589A (fr)
CH (1) CH258127A (fr)
ES (1) ES177008A1 (fr)
FR (1) FR939435A (fr)
GB (2) GB600053A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027799B (de) * 1952-12-05 1958-04-10 Standard Elektrik Ag Geheizte Pressvorrichtung zur Herstellung von Selengleichrichtern und Selenphotoelementen

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2663636A (en) * 1949-05-25 1953-12-22 Haloid Co Electrophotographic plate and method of producing same
BE505958A (fr) * 1950-09-21
US2612679A (en) * 1950-10-23 1952-10-07 Ladisch Rolf Karl Filaments containing fillers
US2963673A (en) * 1955-08-16 1960-12-06 Barnes Eng Co Thermistor bolometers utilizing metal backing blocks
US2963674A (en) * 1955-08-16 1960-12-06 Barnes Eng Co Construction for thermistor bolometers
US2888620A (en) * 1956-04-30 1959-05-26 Westinghouse Air Brake Co High resistance semiconductor cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2136241A (en) * 1938-11-08 Storage battery positive electrode
US1260472A (en) * 1915-08-21 1918-03-26 Nat Carbon Co Inc Storage-battery electrode.
BE415723A (fr) * 1935-06-01
US2108748A (en) * 1935-09-30 1938-02-15 Eagle Picher Lead Company Storage battery positive electrode and method of making the same
BE423105A (fr) * 1936-08-13 1900-01-01
BE436846A (fr) * 1938-11-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027799B (de) * 1952-12-05 1958-04-10 Standard Elektrik Ag Geheizte Pressvorrichtung zur Herstellung von Selengleichrichtern und Selenphotoelementen

Also Published As

Publication number Publication date
ES177008A1 (es) 1947-04-16
US2485589A (en) 1949-10-25
FR939435A (fr) 1948-11-15
GB598589A (en) 1948-02-23
GB600053A (en) 1948-03-30

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