CA997483A - Method of making amorphous semiconductor thin films by sublimation - Google Patents

Method of making amorphous semiconductor thin films by sublimation

Info

Publication number
CA997483A
CA997483A CA186,209A CA186209A CA997483A CA 997483 A CA997483 A CA 997483A CA 186209 A CA186209 A CA 186209A CA 997483 A CA997483 A CA 997483A
Authority
CA
Canada
Prior art keywords
sublimation
thin films
semiconductor thin
amorphous semiconductor
making amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA186,209A
Other languages
English (en)
Inventor
Richard J. Gambino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA997483A publication Critical patent/CA997483A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Glass Compositions (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CA186,209A 1972-12-26 1973-11-20 Method of making amorphous semiconductor thin films by sublimation Expired CA997483A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US318329A US3862857A (en) 1972-12-26 1972-12-26 Method for making amorphous semiconductor thin films

Publications (1)

Publication Number Publication Date
CA997483A true CA997483A (en) 1976-09-21

Family

ID=23237709

Family Applications (1)

Application Number Title Priority Date Filing Date
CA186,209A Expired CA997483A (en) 1972-12-26 1973-11-20 Method of making amorphous semiconductor thin films by sublimation

Country Status (7)

Country Link
US (1) US3862857A (it)
JP (1) JPS5311434B2 (it)
CA (1) CA997483A (it)
DE (1) DE2361984C2 (it)
FR (1) FR2211544B1 (it)
GB (1) GB1440357A (it)
IT (1) IT1001108B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262630A (en) * 1977-01-04 1981-04-21 Bochkarev Ellin P Method of applying layers of source substance over recipient and device for realizing same
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process
KR101043674B1 (ko) * 2004-05-11 2011-06-23 엘지디스플레이 주식회사 스크라이빙 장치 및 방법
US8715772B2 (en) * 2005-04-12 2014-05-06 Air Products And Chemicals, Inc. Thermal deposition coating method
US8293035B2 (en) * 2006-10-12 2012-10-23 Air Products And Chemicals, Inc. Treatment method, system and product
US20080268164A1 (en) * 2007-04-26 2008-10-30 Air Products And Chemicals, Inc. Apparatuses and Methods for Cryogenic Cooling in Thermal Surface Treatment Processes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1447257A (fr) * 1965-05-25 1966-07-29 Centre Nat Rech Scient Procédé pour effectuer des dépôts de matériaux volatils par croissance cristalline sur des supports solides
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
US3615931A (en) * 1968-12-27 1971-10-26 Bell Telephone Labor Inc Technique for growth of epitaxial compound semiconductor films
GB1325219A (en) * 1971-10-01 1973-08-01 Mullard Ltd Variable frequency oscillator systems

Also Published As

Publication number Publication date
FR2211544B1 (it) 1976-04-30
GB1440357A (en) 1976-06-23
DE2361984A1 (de) 1974-06-27
JPS4991579A (it) 1974-09-02
DE2361984C2 (de) 1983-04-21
IT1001108B (it) 1976-04-20
JPS5311434B2 (it) 1978-04-21
US3862857A (en) 1975-01-28
FR2211544A1 (it) 1974-07-19

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