CA990415A - Method of making a metal silicide-silicon schottky barrier - Google Patents

Method of making a metal silicide-silicon schottky barrier

Info

Publication number
CA990415A
CA990415A CA186,609A CA186609A CA990415A CA 990415 A CA990415 A CA 990415A CA 186609 A CA186609 A CA 186609A CA 990415 A CA990415 A CA 990415A
Authority
CA
Canada
Prior art keywords
making
metal silicide
schottky barrier
silicon schottky
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA186,609A
Other languages
English (en)
Other versions
CA186609S (en
Inventor
Yuen-Sheng Chiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA990415A publication Critical patent/CA990415A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Silicon Compounds (AREA)
CA186,609A 1972-12-11 1973-11-23 Method of making a metal silicide-silicon schottky barrier Expired CA990415A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00314002A US3841904A (en) 1972-12-11 1972-12-11 Method of making a metal silicide-silicon schottky barrier

Publications (1)

Publication Number Publication Date
CA990415A true CA990415A (en) 1976-06-01

Family

ID=23218106

Family Applications (1)

Application Number Title Priority Date Filing Date
CA186,609A Expired CA990415A (en) 1972-12-11 1973-11-23 Method of making a metal silicide-silicon schottky barrier

Country Status (6)

Country Link
US (1) US3841904A (it)
JP (1) JPS4997000A (it)
CA (1) CA990415A (it)
DE (1) DE2360030C3 (it)
FR (1) FR2210014B1 (it)
GB (1) GB1411830A (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110488A (en) * 1976-04-09 1978-08-29 Rca Corporation Method for making schottky barrier diodes
US4052253A (en) * 1976-09-27 1977-10-04 Motorola, Inc. Semiconductor-oxide etchant
DE2658124C3 (de) * 1976-12-22 1982-05-06 Dynamit Nobel Ag, 5210 Troisdorf Verfahren zur Herstellung von Elektroschmelzkorund
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
US4675713A (en) * 1982-05-10 1987-06-23 Motorola, Inc. MOS transistor
US4816879A (en) * 1982-12-08 1989-03-28 North American Philips Corporation, Signetics Division Schottky-type rectifier having controllable barrier height
US4687537A (en) * 1986-04-15 1987-08-18 Rca Corporation Epitaxial metal silicide layers
US4914042A (en) * 1986-09-30 1990-04-03 Colorado State University Research Foundation Forming a transition metal silicide radiation detector and source
US5804034A (en) * 1994-03-21 1998-09-08 Texas Instruments Incorporated Method for manufacturing semiconductor device
US7002197B2 (en) * 2004-01-23 2006-02-21 Hewlett-Packard Development Company, L.P. Cross point resistive memory array
EP2204074B1 (en) * 2007-09-10 2019-11-06 University of Florida Research Foundation, Inc. Nanotube enabled, gate-voltage controlled light emitting diodes
JP6426102B2 (ja) 2012-11-05 2018-11-21 ユニバーシティー オブ フロリダ リサーチ ファウンデーション，インコーポレイテッドＵｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｒｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． ディスプレイにおける輝度補償

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397450A (en) * 1964-01-31 1968-08-20 Fairchild Camera Instr Co Method of forming a metal rectifying contact to semiconductor material by displacement plating
FR1481605A (fr) * 1965-06-02 1967-05-19 Texas Instruments Inc Procédé de fabrication de contacts ohmiques sur des composants semi-conducteurs
US3519479A (en) * 1965-12-16 1970-07-07 Matsushita Electronics Corp Method of manufacturing semiconductor device
US3476984A (en) * 1966-11-10 1969-11-04 Solitron Devices Schottky barrier semiconductor device
JPS4826188B1 (it) * 1968-10-04 1973-08-07
US3642526A (en) * 1969-03-06 1972-02-15 Hitachi Ltd Semiconductor surface barrier diode of schottky type and method of making same
US3669730A (en) * 1970-04-24 1972-06-13 Bell Telephone Labor Inc Modifying barrier layer devices
US3742317A (en) * 1970-09-02 1973-06-26 Instr Inc Schottky barrier diode

Also Published As

Publication number Publication date
DE2360030B2 (de) 1978-08-03
DE2360030A1 (de) 1974-06-20
FR2210014B1 (it) 1978-11-10
JPS4997000A (it) 1974-09-13
US3841904A (en) 1974-10-15
GB1411830A (en) 1975-10-29
DE2360030C3 (de) 1979-04-05
FR2210014A1 (it) 1974-07-05

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