CA972077A - High frequency insulated gate field effect transistor for wide frequency band operation - Google Patents

High frequency insulated gate field effect transistor for wide frequency band operation

Info

Publication number
CA972077A
CA972077A CA158,587A CA158587A CA972077A CA 972077 A CA972077 A CA 972077A CA 158587 A CA158587 A CA 158587A CA 972077 A CA972077 A CA 972077A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
insulated gate
gate field
band operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA158,587A
Other languages
English (en)
Other versions
CA158587S (en
Inventor
Robert H. Dawson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA972077A publication Critical patent/CA972077A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
CA158,587A 1972-04-10 1972-12-11 High frequency insulated gate field effect transistor for wide frequency band operation Expired CA972077A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24239072A 1972-04-10 1972-04-10

Publications (1)

Publication Number Publication Date
CA972077A true CA972077A (en) 1975-07-29

Family

ID=22914605

Family Applications (1)

Application Number Title Priority Date Filing Date
CA158,587A Expired CA972077A (en) 1972-04-10 1972-12-11 High frequency insulated gate field effect transistor for wide frequency band operation

Country Status (6)

Country Link
US (1) US3749985A (de)
JP (1) JPS5141552B2 (de)
BE (1) BE792939A (de)
CA (1) CA972077A (de)
DE (1) DE2300116B2 (de)
GB (1) GB1348972A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516804B1 (de) * 1971-01-22 1976-03-02
JPS5045574A (de) * 1973-08-24 1975-04-23
JPS5136536A (ja) * 1974-09-24 1976-03-27 Nippon Kogei Kogyo Co Kodenatsuhatsuseihoho oyobi sochi
US4034399A (en) * 1976-02-27 1977-07-05 Rca Corporation Interconnection means for an array of majority carrier microwave devices
JPS5629010Y2 (de) * 1976-10-20 1981-07-10
US4202001A (en) * 1978-05-05 1980-05-06 Rca Corporation Semiconductor device having grid for plating contacts
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPH0614547B2 (ja) * 1980-11-21 1994-02-23 株式会社日立製作所 パワーｍｏｓｆｅｔ
NL8104414A (nl) * 1981-09-25 1983-04-18 Philips Nv Halfgeleiderinrichting met veldeffekttransistor.
JPS58169165U (ja) * 1982-05-10 1983-11-11 三菱電機株式会社 内燃機関点火装置
JPS58195071A (ja) * 1982-05-10 1983-11-14 Mitsubishi Electric Corp 機関点火装置
US4688072A (en) * 1984-06-29 1987-08-18 Hughes Aircraft Company Hierarchical configurable gate array
JPS6144466A (ja) * 1985-07-26 1986-03-04 Matsushita Electronics Corp Ｍｏｓ型半導体装置
US5060048A (en) * 1986-10-22 1991-10-22 Siemens Aktiengesellschaft & Semikron GmbH Semiconductor component having at least one power mosfet
US5721144A (en) * 1995-04-27 1998-02-24 International Business Machines Corporation Method of making trimmable modular MOSFETs for high aspect ratio applications
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH384597A (it) * 1960-11-26 1964-11-30 Olivetti & Co Spa Cinematico di scrittura per macchine per scrivere a mano
US3465293A (en) * 1966-03-11 1969-09-02 Fairchild Camera Instr Co Detector array controlling mos transistor matrix
US3541543A (en) * 1966-07-25 1970-11-17 Texas Instruments Inc Binary decoder
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3590342A (en) * 1968-11-06 1971-06-29 Hewlett Packard Co Mos integrated circuit with regions of ground potential interconnected through the semiconductor substrate
US3575609A (en) * 1969-05-27 1971-04-20 Nat Semiconductor Corp Two-phase ultra-fast micropower dynamic shift register
US3652906A (en) * 1970-03-24 1972-03-28 Alton O Christensen Mosfet decoder topology
US3657614A (en) * 1970-06-15 1972-04-18 Westinghouse Electric Corp Mis array utilizing field induced junctions

Also Published As

Publication number Publication date
US3749985A (en) 1973-07-31
GB1348972A (en) 1974-03-27
DE2300116A1 (de) 1973-10-25
JPS4917978A (de) 1974-02-16
DE2300116B2 (de) 1978-03-30
JPS5141552B2 (de) 1976-11-10
BE792939A (de) 1973-04-16

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