CA967505A - Formation process for producing dielectric aluminum oxide films - Google Patents

Formation process for producing dielectric aluminum oxide films

Info

Publication number
CA967505A
CA967505A CA145,094A CA145094A CA967505A CA 967505 A CA967505 A CA 967505A CA 145094 A CA145094 A CA 145094A CA 967505 A CA967505 A CA 967505A
Authority
CA
Canada
Prior art keywords
aluminum oxide
formation process
oxide films
producing dielectric
dielectric aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA145,094A
Other languages
English (en)
Other versions
CA145094S (en
Inventor
Robert S. Alwitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sprague Electric Co
Original Assignee
Sprague Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sprague Electric Co filed Critical Sprague Electric Co
Application granted granted Critical
Publication of CA967505A publication Critical patent/CA967505A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/12—Anodising more than once, e.g. in different baths
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/16—Pretreatment, e.g. desmutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/917—Treatment of workpiece between coating steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Photoreceptors In Electrophotography (AREA)
CA145,094A 1971-07-23 1972-06-19 Formation process for producing dielectric aluminum oxide films Expired CA967505A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16558071A 1971-07-23 1971-07-23

Publications (1)

Publication Number Publication Date
CA967505A true CA967505A (en) 1975-05-13

Family

ID=22599512

Family Applications (1)

Application Number Title Priority Date Filing Date
CA145,094A Expired CA967505A (en) 1971-07-23 1972-06-19 Formation process for producing dielectric aluminum oxide films

Country Status (5)

Country Link
US (1) US3733291A (cs)
JP (1) JPS5144740B1 (cs)
CA (1) CA967505A (cs)
FR (1) FR2147123B1 (cs)
GB (1) GB1381987A (cs)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240763A (en) * 1975-09-27 1977-03-29 Fujitsu Ltd Method of manufacturing solid state electrolytic capacitor
US4125674A (en) * 1976-03-17 1978-11-14 Toyo Aluminium Kabushiki Kaisha Aluminum foil for an electrode of an electrolytic capacitor
US4113579A (en) * 1977-04-28 1978-09-12 Sprague Electric Company Process for producing an aluminum electrolytic capacitor having a stable oxide film
US4437946A (en) * 1983-08-31 1984-03-20 Sprague Electric Company Stabilization of aluminum electrolytic capacitor foil
US4580194A (en) * 1984-10-19 1986-04-01 Sprague Electric Company Aluminum electrolytic capacitor
US7125610B2 (en) 2003-03-17 2006-10-24 Kemet Electronics Corporation Capacitor containing aluminum anode foil anodized in low water content glycerine-phosphate electrolyte without a pre-anodizing hydration step
CN103388167A (zh) * 2013-08-18 2013-11-13 中航沈飞民用飞机有限责任公司 一种铝合金表面防护处理方法
CN105021303B (zh) * 2015-07-15 2018-04-17 哈尔滨工程大学 一种铝基敏感材料的温度传感器制造方法
JP6990974B2 (ja) * 2017-02-09 2022-01-12 日本軽金属株式会社 アルミニウム電解コンデンサ用電極の製造方法

Also Published As

Publication number Publication date
JPS5144740B1 (cs) 1976-11-30
FR2147123A1 (cs) 1973-03-09
GB1381987A (en) 1975-01-29
US3733291A (en) 1973-05-15
FR2147123B1 (cs) 1977-08-26
DE2235112B2 (de) 1976-04-22
DE2235112A1 (de) 1973-02-08

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