CA964771A - Method of preventing dielectric breakdown during d.c. sputter etching - Google Patents

Method of preventing dielectric breakdown during d.c. sputter etching

Info

Publication number
CA964771A
CA964771A CA135,898A CA135898A CA964771A CA 964771 A CA964771 A CA 964771A CA 135898 A CA135898 A CA 135898A CA 964771 A CA964771 A CA 964771A
Authority
CA
Canada
Prior art keywords
dielectric breakdown
sputter etching
breakdown during
preventing dielectric
preventing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA135,898A
Other languages
English (en)
Other versions
CA135898S (en
Inventor
Theodore H. Baker
Majid Ghafghaichi
Daniel Tuman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA964771A publication Critical patent/CA964771A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W72/07236—
CA135,898A 1971-03-30 1972-03-01 Method of preventing dielectric breakdown during d.c. sputter etching Expired CA964771A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/129,430 US3983023A (en) 1971-03-30 1971-03-30 Integrated semiconductor circuit master-slice structure in which the insulation layer beneath unused contact terminals is free of short-circuits

Publications (1)

Publication Number Publication Date
CA964771A true CA964771A (en) 1975-03-18

Family

ID=22439896

Family Applications (1)

Application Number Title Priority Date Filing Date
CA135,898A Expired CA964771A (en) 1971-03-30 1972-03-01 Method of preventing dielectric breakdown during d.c. sputter etching

Country Status (5)

Country Link
US (1) US3983023A (OSRAM)
JP (1) JPS5134272B1 (OSRAM)
CA (1) CA964771A (OSRAM)
DE (1) DE2213657C3 (OSRAM)
GB (1) GB1320884A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213665A (en) * 1975-07-24 1977-02-02 Canon Kk System for suppressing leak current in printed wiring circuit net
US4087314A (en) * 1976-09-13 1978-05-02 Motorola, Inc. Bonding pedestals for semiconductor devices
US4527041A (en) * 1983-06-02 1985-07-02 Kazuo Kai Method of forming a wiring pattern on a wiring board

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3388301A (en) * 1964-12-09 1968-06-11 Signetics Corp Multichip integrated circuit assembly with interconnection structure
DE1514871B2 (de) * 1965-09-17 1972-04-13 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur pruefung einzelner bauelemente oder schaltungsteile von einer oder mehreren integrierten schaltung(en)
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3365707A (en) * 1967-06-23 1968-01-23 Rca Corp Lsi array and standard cells
US3658678A (en) * 1969-11-26 1972-04-25 Ibm Glass-annealing process for encapsulating and stabilizing fet devices

Also Published As

Publication number Publication date
GB1320884A (en) 1973-06-20
DE2213657A1 (de) 1972-10-12
US3983023A (en) 1976-09-28
DE2213657C3 (de) 1983-11-10
JPS5134272B1 (OSRAM) 1976-09-25
DE2213657B2 (OSRAM) 1980-02-21

Similar Documents

Publication Publication Date Title
AU456093B2 (en) Method of radiofrequency sputter etching
CA957740A (en) Clamp-top type insulator
CA964771A (en) Method of preventing dielectric breakdown during d.c. sputter etching
CA966044A (en) Bath and method for etching aluminum
CA975803A (en) Method of manufacturing special solvent
CA979593A (en) Process for improving the color characteristics of antioxidants
CA965801A (en) Method for inhibiting the polymerization of conjugated dienes
CA954593A (en) Magnetron starting circuit
CA998573A (en) Method of insulating cold substrates
AU462371B2 (en) Extraction of metal compounds
AU472007B2 (en) Dielectric layer composition
CA879058A (en) Etching
CA863542A (en) Method of making semiconductor devices
CA875270A (en) Radio-frequency feed-through assembly
CA885819A (en) Multistep method of waterflooding
CA887139A (en) Method for the polymerization of epoxide
AU457605B2 (en) Method of vacuum carburizing
CA903648A (en) Tin oxide etching method
CA883895A (en) Method of postreacting polymers
CA841022A (en) Reduction of .delta.3-cephalosporin sulfoxides
CA879296A (en) Method of adjusting tuned circuits
CA861463A (en) Method of annealing aluminum
CA894489A (en) Control of semiconductor surface potential using sputtered dielectrics
CA929480A (en) Elevating ramp
CA866862A (en) Method for inhibiting polymerization of conjugated dienes