CA961968A - Monolithic construction of photodetectors - Google Patents

Monolithic construction of photodetectors

Info

Publication number
CA961968A
CA961968A CA108,380A CA108380A CA961968A CA 961968 A CA961968 A CA 961968A CA 108380 A CA108380 A CA 108380A CA 961968 A CA961968 A CA 961968A
Authority
CA
Canada
Prior art keywords
photodetectors
monolithic construction
monolithic
construction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA108,380A
Other languages
English (en)
Other versions
CA108380S (fr
Inventor
Joseph E. Slawek (Jr.)
Harvey W. Altemose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Barnes Engineering Co
Original Assignee
Barnes Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Barnes Engineering Co filed Critical Barnes Engineering Co
Application granted granted Critical
Publication of CA961968A publication Critical patent/CA961968A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
CA108,380A 1970-05-05 1971-03-22 Monolithic construction of photodetectors Expired CA961968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3466870A 1970-05-05 1970-05-05

Publications (1)

Publication Number Publication Date
CA961968A true CA961968A (en) 1975-01-28

Family

ID=21877849

Family Applications (1)

Application Number Title Priority Date Filing Date
CA108,380A Expired CA961968A (en) 1970-05-05 1971-03-22 Monolithic construction of photodetectors

Country Status (9)

Country Link
US (1) US3704375A (de)
BE (1) BE766743A (de)
CA (1) CA961968A (de)
CH (1) CH524896A (de)
DE (1) DE2122065A1 (de)
FR (1) FR2088357B1 (de)
GB (1) GB1315300A (de)
NL (1) NL7103056A (de)
SE (1) SE348886B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349981A (en) * 1976-10-18 1978-05-06 Nippon Telegr & Teleph Corp <Ntt> Photoelectric conversion element
JPS5980964A (ja) * 1982-11-01 1984-05-10 Toshiba Corp 光電変換素子
DE19607047C2 (de) * 1996-02-24 1999-03-25 Gen Semiconductor Ireland Macr Verfahren zum Herstellen von Halbleiterelementen mit aktiven Strukturen
DE102004001556A1 (de) * 2004-01-10 2005-08-04 Robert Bosch Gmbh Nachtsichtsystem für Kraftfahrzeuge mit partiellem optischem Filter
DE102004013850B4 (de) * 2004-03-20 2006-12-21 Robert Bosch Gmbh Filterchip mit integrierter Blende

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3344278A (en) * 1963-06-14 1967-09-26 Int Rectifier Corp Data readout system utilizing light sensitive junction switch members
US3366789A (en) * 1964-02-12 1968-01-30 American Cyanamid Co Calibration of ultraviolet radiation sources
GB1084705A (en) * 1965-08-27 1967-09-27 Standard Telephones Cables Ltd Semiconductor planar optical mixer systems
US3478214A (en) * 1966-02-16 1969-11-11 North American Rockwell Photodetector responsive to light intensity in different spectral bands
US3435232A (en) * 1966-03-03 1969-03-25 Hewlett Packard Co Beam position detector
US3488636A (en) * 1966-08-22 1970-01-06 Fairchild Camera Instr Co Optically programmable read only memory
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
NL6709192A (de) * 1967-07-01 1969-01-03
US3483096A (en) * 1968-04-25 1969-12-09 Avco Corp Process for making an indium antimonide infrared detector contact

Also Published As

Publication number Publication date
BE766743A (fr) 1971-11-05
GB1315300A (en) 1973-05-02
NL7103056A (de) 1971-11-09
FR2088357B1 (de) 1978-02-24
US3704375A (en) 1972-11-28
SE348886B (de) 1972-09-11
DE2122065A1 (de) 1971-11-18
CH524896A (de) 1972-06-30
FR2088357A1 (de) 1972-01-07

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