CA960364A - Array of devices responsive to differential light signals - Google Patents
Array of devices responsive to differential light signalsInfo
- Publication number
- CA960364A CA960364A CA138,498A CA138498A CA960364A CA 960364 A CA960364 A CA 960364A CA 138498 A CA138498 A CA 138498A CA 960364 A CA960364 A CA 960364A
- Authority
- CA
- Canada
- Prior art keywords
- array
- light signals
- devices responsive
- differential light
- differential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Image Input (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Holo Graphy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13632871A | 1971-04-22 | 1971-04-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA960364A true CA960364A (en) | 1974-12-31 |
Family
ID=22472365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA138,498A Expired CA960364A (en) | 1971-04-22 | 1972-03-29 | Array of devices responsive to differential light signals |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3753247A (cs) |
| JP (1) | JPS526578B1 (cs) |
| CA (1) | CA960364A (cs) |
| DE (1) | DE2219024B2 (cs) |
| FR (1) | FR2134042B1 (cs) |
| GB (1) | GB1369374A (cs) |
| NL (1) | NL7205412A (cs) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1503762A (en) * | 1975-04-01 | 1978-03-15 | Elliott Bros | Surveillance systems |
| GB1565146A (en) * | 1976-08-16 | 1980-04-16 | Fairchild Camera Instr Co | Random access momory cells |
| DE3138295A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte |
| DE3138314A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht |
| JPH07120767B2 (ja) * | 1986-09-19 | 1995-12-20 | キヤノン株式会社 | 光電変換装置 |
| US4751378B1 (en) * | 1987-04-24 | 2000-04-25 | Bell Telephone Labor Inc | Optical device with quantum well absorption |
| US4754132A (en) * | 1987-04-24 | 1988-06-28 | American Telephone And Telegraph Company, At&T Bell Laboratories | Symmetric optical device with quantum well absorption |
| US4800262A (en) * | 1987-12-31 | 1989-01-24 | American Telephone And Telegraph Company, At&T Bell Laboratories | Tri-state optical device with quantum well absorption |
| FR2627923B1 (fr) * | 1988-02-26 | 1990-06-22 | Thomson Csf | Matrice d'elements photosensibles et detecteur de radiations comportant une telle matrice, notamment detecteur de rayons x a double energie |
| US4935636A (en) * | 1988-05-31 | 1990-06-19 | Kenneth Gural | Highly sensitive image sensor providing continuous magnification of the detected image and method of using |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2982859A (en) * | 1959-02-04 | 1961-05-02 | Engelhard Hanovia Inc | Light communication alinement system |
| US3454414A (en) * | 1964-11-02 | 1969-07-08 | Sperry Rand Corp | Photochromic material |
| DE1524385B2 (de) * | 1965-12-15 | 1975-03-20 | Hitachi Ltd., Tokio | Zeichenabtaster |
| US3488636A (en) * | 1966-08-22 | 1970-01-06 | Fairchild Camera Instr Co | Optically programmable read only memory |
| US3526880A (en) * | 1966-10-27 | 1970-09-01 | Olivetti General Electric Spa | Permanent electro-optical memory system using light conducting rods or fibers |
| US3566371A (en) * | 1967-12-21 | 1971-02-23 | Frank S Barnes | Quantum state memory |
| FR1586904A (cs) * | 1968-08-01 | 1970-03-06 | ||
| US3624419A (en) * | 1970-10-19 | 1971-11-30 | Rca Corp | Balanced optically settable memory cell |
-
1971
- 1971-04-22 US US00136328A patent/US3753247A/en not_active Expired - Lifetime
-
1972
- 1972-03-29 CA CA138,498A patent/CA960364A/en not_active Expired
- 1972-04-19 DE DE19722219024 patent/DE2219024B2/de active Granted
- 1972-04-21 NL NL7205412A patent/NL7205412A/xx unknown
- 1972-04-21 GB GB1857472A patent/GB1369374A/en not_active Expired
- 1972-04-21 JP JP47040836A patent/JPS526578B1/ja active Pending
- 1972-04-21 FR FR7214287A patent/FR2134042B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1369374A (en) | 1974-10-09 |
| DE2219024A1 (de) | 1972-11-02 |
| US3753247A (en) | 1973-08-14 |
| DE2219024B2 (de) | 1976-01-22 |
| FR2134042B1 (cs) | 1976-10-29 |
| JPS526578B1 (cs) | 1977-02-23 |
| NL7205412A (cs) | 1972-10-24 |
| FR2134042A1 (cs) | 1972-12-01 |
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