NL7205412A - - Google Patents

Info

Publication number
NL7205412A
NL7205412A NL7205412A NL7205412A NL7205412A NL 7205412 A NL7205412 A NL 7205412A NL 7205412 A NL7205412 A NL 7205412A NL 7205412 A NL7205412 A NL 7205412A NL 7205412 A NL7205412 A NL 7205412A
Authority
NL
Netherlands
Application number
NL7205412A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7205412A publication Critical patent/NL7205412A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Holo Graphy (AREA)
  • Semiconductor Memories (AREA)
NL7205412A 1971-04-22 1972-04-21 NL7205412A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13632871A 1971-04-22 1971-04-22

Publications (1)

Publication Number Publication Date
NL7205412A true NL7205412A (xx) 1972-10-24

Family

ID=22472365

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7205412A NL7205412A (xx) 1971-04-22 1972-04-21

Country Status (7)

Country Link
US (1) US3753247A (xx)
JP (1) JPS526578B1 (xx)
CA (1) CA960364A (xx)
DE (1) DE2219024B2 (xx)
FR (1) FR2134042B1 (xx)
GB (1) GB1369374A (xx)
NL (1) NL7205412A (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1503762A (en) * 1975-04-01 1978-03-15 Elliott Bros Surveillance systems
GB1565146A (en) * 1976-08-16 1980-04-16 Fairchild Camera Instr Co Random access momory cells
DE3138295A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte
DE3138314A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
US4751378B1 (en) * 1987-04-24 2000-04-25 Bell Telephone Labor Inc Optical device with quantum well absorption
US4754132A (en) * 1987-04-24 1988-06-28 American Telephone And Telegraph Company, At&T Bell Laboratories Symmetric optical device with quantum well absorption
US4800262A (en) * 1987-12-31 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Tri-state optical device with quantum well absorption
FR2627923B1 (fr) * 1988-02-26 1990-06-22 Thomson Csf Matrice d'elements photosensibles et detecteur de radiations comportant une telle matrice, notamment detecteur de rayons x a double energie
US4935636A (en) * 1988-05-31 1990-06-19 Kenneth Gural Highly sensitive image sensor providing continuous magnification of the detected image and method of using

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2982859A (en) * 1959-02-04 1961-05-02 Engelhard Hanovia Inc Light communication alinement system
US3454414A (en) * 1964-11-02 1969-07-08 Sperry Rand Corp Photochromic material
DE1524385B2 (de) * 1965-12-15 1975-03-20 Hitachi Ltd., Tokio Zeichenabtaster
US3488636A (en) * 1966-08-22 1970-01-06 Fairchild Camera Instr Co Optically programmable read only memory
US3526880A (en) * 1966-10-27 1970-09-01 Olivetti General Electric Spa Permanent electro-optical memory system using light conducting rods or fibers
US3566371A (en) * 1967-12-21 1971-02-23 Frank S Barnes Quantum state memory
FR1586904A (xx) * 1968-08-01 1970-03-06
US3624419A (en) * 1970-10-19 1971-11-30 Rca Corp Balanced optically settable memory cell

Also Published As

Publication number Publication date
FR2134042B1 (xx) 1976-10-29
US3753247A (en) 1973-08-14
FR2134042A1 (xx) 1972-12-01
JPS526578B1 (xx) 1977-02-23
GB1369374A (en) 1974-10-09
DE2219024B2 (de) 1976-01-22
CA960364A (en) 1974-12-31
DE2219024A1 (de) 1972-11-02

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