CA939236A - Production of localised doped zones in semiconductor crystals - Google Patents

Production of localised doped zones in semiconductor crystals

Info

Publication number
CA939236A
CA939236A CA088,235A CA88235A CA939236A CA 939236 A CA939236 A CA 939236A CA 88235 A CA88235 A CA 88235A CA 939236 A CA939236 A CA 939236A
Authority
CA
Canada
Prior art keywords
localised
production
semiconductor crystals
doped zones
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA088,235A
Inventor
Heinrich Kessler
Wolfgang Schembs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA939236A publication Critical patent/CA939236A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
CA088,235A 1969-07-15 1970-07-15 Production of localised doped zones in semiconductor crystals Expired CA939236A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691935981 DE1935981A1 (en) 1969-07-15 1969-07-15 Method for doping a semiconductor by means of diffusion

Publications (1)

Publication Number Publication Date
CA939236A true CA939236A (en) 1974-01-01

Family

ID=5739881

Family Applications (1)

Application Number Title Priority Date Filing Date
CA088,235A Expired CA939236A (en) 1969-07-15 1970-07-15 Production of localised doped zones in semiconductor crystals

Country Status (7)

Country Link
CA (1) CA939236A (en)
CH (1) CH505467A (en)
DE (1) DE1935981A1 (en)
FR (1) FR2051753B1 (en)
GB (1) GB1278565A (en)
NL (1) NL7007454A (en)
SE (1) SE370815B (en)

Also Published As

Publication number Publication date
SE370815B (en) 1974-10-28
DE1935981A1 (en) 1971-02-04
FR2051753A1 (en) 1971-04-09
CH505467A (en) 1971-03-31
FR2051753B1 (en) 1974-10-31
NL7007454A (en) 1971-01-19
GB1278565A (en) 1972-06-21

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