CA932875A - Surface controlled avalanche semiconductor device - Google Patents
Surface controlled avalanche semiconductor deviceInfo
- Publication number
- CA932875A CA932875A CA117677A CA117677A CA932875A CA 932875 A CA932875 A CA 932875A CA 117677 A CA117677 A CA 117677A CA 117677 A CA117677 A CA 117677A CA 932875 A CA932875 A CA 932875A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- surface controlled
- controlled avalanche
- avalanche semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5409770A | 1970-07-13 | 1970-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA932875A true CA932875A (en) | 1973-08-28 |
Family
ID=21988786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA117677A Expired CA932875A (en) | 1970-07-13 | 1971-07-07 | Surface controlled avalanche semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3675092A (OSRAM) |
| JP (1) | JPS527915B1 (OSRAM) |
| CA (1) | CA932875A (OSRAM) |
| DE (1) | DE2134719A1 (OSRAM) |
| FR (1) | FR2098370B3 (OSRAM) |
| GB (1) | GB1340350A (OSRAM) |
| NL (1) | NL7109590A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2420846A1 (fr) * | 1978-03-21 | 1979-10-19 | Thomson Csf | Structure semi-conductrice a avalanche comportant une troisieme electrode |
| US5552639A (en) * | 1980-09-01 | 1996-09-03 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
| JPS5754370A (en) * | 1980-09-19 | 1982-03-31 | Nippon Telegr & Teleph Corp <Ntt> | Insulating gate type transistor |
| JPS57174614U (OSRAM) * | 1981-04-30 | 1982-11-04 | ||
| FR2776838B1 (fr) * | 1998-03-26 | 2003-06-13 | Sgs Thomson Microelectronics | Procede de fabrication d'une diode de type zener a seuil variable |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3271640A (en) * | 1962-10-11 | 1966-09-06 | Fairchild Camera Instr Co | Semiconductor tetrode |
| NL136562C (OSRAM) * | 1963-10-24 | |||
| US3461357A (en) * | 1967-09-15 | 1969-08-12 | Ibm | Multilevel terminal metallurgy for semiconductor devices |
-
1970
- 1970-07-13 US US54097A patent/US3675092A/en not_active Expired - Lifetime
-
1971
- 1971-07-07 CA CA117677A patent/CA932875A/en not_active Expired
- 1971-07-09 GB GB3236171A patent/GB1340350A/en not_active Expired
- 1971-07-12 DE DE19712134719 patent/DE2134719A1/de active Pending
- 1971-07-12 NL NL7109590A patent/NL7109590A/xx unknown
- 1971-07-12 FR FR7125544A patent/FR2098370B3/fr not_active Expired
- 1971-07-13 JP JP46052037A patent/JPS527915B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2098370A3 (OSRAM) | 1972-03-10 |
| US3675092A (en) | 1972-07-04 |
| JPS527915B1 (OSRAM) | 1977-03-05 |
| NL7109590A (OSRAM) | 1972-01-17 |
| GB1340350A (en) | 1973-12-12 |
| DE2134719A1 (de) | 1972-01-20 |
| FR2098370B3 (OSRAM) | 1974-04-05 |
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