CA931277A - Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon - Google Patents
Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereonInfo
- Publication number
- CA931277A CA931277A CA080027A CA80027A CA931277A CA 931277 A CA931277 A CA 931277A CA 080027 A CA080027 A CA 080027A CA 80027 A CA80027 A CA 80027A CA 931277 A CA931277 A CA 931277A
- Authority
- CA
- Canada
- Prior art keywords
- construction
- electronic devices
- individual electronic
- distributing power
- devices constructed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/098—Layer conversion
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82366269A | 1969-05-12 | 1969-05-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA931277A true CA931277A (en) | 1973-07-31 |
Family
ID=25239356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA080027A Expired CA931277A (en) | 1969-05-12 | 1970-04-14 | Construction of monolithic chip and method of distributing power therein for individual electronic devices constructed thereon |
Country Status (7)
Country | Link |
---|---|
US (1) | US3656028A (de) |
JP (1) | JPS5422753B1 (de) |
CA (1) | CA931277A (de) |
CH (1) | CH501316A (de) |
DE (1) | DE2022457A1 (de) |
FR (1) | FR2042556B1 (de) |
GB (1) | GB1246775A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769105A (en) * | 1970-01-26 | 1973-10-30 | Ibm | Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor |
US3808475A (en) * | 1972-07-10 | 1974-04-30 | Amdahl Corp | Lsi chip construction and method |
US3866066A (en) * | 1973-07-16 | 1975-02-11 | Bell Telephone Labor Inc | Power supply distribution for integrated circuits |
US3995309A (en) * | 1973-10-30 | 1976-11-30 | General Electric Company | Isolation junctions for semiconductor devices |
US3982268A (en) * | 1973-10-30 | 1976-09-21 | General Electric Company | Deep diode lead throughs |
US3988763A (en) * | 1973-10-30 | 1976-10-26 | General Electric Company | Isolation junctions for semiconductors devices |
US4046605A (en) * | 1974-01-14 | 1977-09-06 | National Semiconductor Corporation | Method of electrically isolating individual semiconductor circuits in a wafer |
DE2401701C3 (de) * | 1974-01-15 | 1978-12-21 | Robert Bosch Gmbh, 7000 Stuttgart | Transistorleistungsschalter |
US3988766A (en) * | 1974-04-29 | 1976-10-26 | General Electric Company | Multiple P-N junction formation with an alloy droplet |
CA1024661A (en) * | 1974-06-26 | 1978-01-17 | International Business Machines Corporation | Wireable planar integrated circuit chip structure |
US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
US4168997A (en) * | 1978-10-10 | 1979-09-25 | National Semiconductor Corporation | Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer |
US4649417A (en) * | 1983-09-22 | 1987-03-10 | International Business Machines Corporation | Multiple voltage integrated circuit packaging substrate |
US5159429A (en) * | 1990-01-23 | 1992-10-27 | International Business Machines Corporation | Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1378131A (fr) * | 1962-10-05 | 1964-11-13 | Fairchild Camera Instr Co | Procédé de formation de modèle dans une couche épitaxique de semiconducteur et dispositifs ainsi fabriqués |
SE312860B (de) * | 1964-09-28 | 1969-07-28 | Asea Ab | |
US3372070A (en) * | 1965-07-30 | 1968-03-05 | Bell Telephone Labor Inc | Fabrication of semiconductor integrated devices with a pn junction running through the wafer |
US3423650A (en) * | 1966-07-01 | 1969-01-21 | Rca Corp | Monolithic semiconductor microcircuits with improved means for connecting points of common potential |
FR155459A (de) * | 1967-01-23 | |||
US3538397A (en) * | 1967-05-09 | 1970-11-03 | Motorola Inc | Distributed semiconductor power supplies and decoupling capacitor therefor |
US3460010A (en) * | 1968-05-15 | 1969-08-05 | Ibm | Thin film decoupling capacitor incorporated in an integrated circuit chip,and process for making same |
-
1969
- 1969-05-12 US US823662A patent/US3656028A/en not_active Expired - Lifetime
-
1970
- 1970-04-09 GB GB06820/70A patent/GB1246775A/en not_active Expired
- 1970-04-14 CA CA080027A patent/CA931277A/en not_active Expired
- 1970-04-16 FR FR7013698A patent/FR2042556B1/fr not_active Expired
- 1970-04-28 CH CH635070A patent/CH501316A/de not_active IP Right Cessation
- 1970-05-01 JP JP3690170A patent/JPS5422753B1/ja active Pending
- 1970-05-08 DE DE19702022457 patent/DE2022457A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPS5422753B1 (de) | 1979-08-08 |
GB1246775A (en) | 1971-09-22 |
DE2022457A1 (de) | 1970-11-19 |
FR2042556B1 (de) | 1973-10-19 |
CH501316A (de) | 1970-12-31 |
FR2042556A1 (de) | 1971-02-12 |
US3656028A (en) | 1972-04-11 |
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