CA926029A - Semiconductor device having a transistor - Google Patents

Semiconductor device having a transistor

Info

Publication number
CA926029A
CA926029A CA117580A CA117580A CA926029A CA 926029 A CA926029 A CA 926029A CA 117580 A CA117580 A CA 117580A CA 117580 A CA117580 A CA 117580A CA 926029 A CA926029 A CA 926029A
Authority
CA
Canada
Prior art keywords
transistor
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA117580A
Other languages
English (en)
Other versions
CA117580S (en
Inventor
Kooi Else
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE7010204,A external-priority patent/NL170902C/xx
Priority claimed from NLAANVRAGE7010205,A external-priority patent/NL169936C/xx
Priority claimed from NL7010208A external-priority patent/NL7010208A/xx
Priority claimed from NL7013365.A external-priority patent/NL159819B/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA926029A publication Critical patent/CA926029A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P14/61—
    • H10W10/00—
    • H10W10/01—
    • H10W10/012—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
    • H10W15/00—
    • H10W15/01—
CA117580A 1970-07-10 1971-07-07 Semiconductor device having a transistor Expired CA926029A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
NLAANVRAGE7010205,A NL169936C (nl) 1970-07-10 1970-07-10 Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
NL7010208A NL7010208A (OSRAM) 1966-10-05 1970-07-10
NL7013365.A NL159819B (nl) 1970-09-10 1970-09-10 Halfgeleiderinrichting met een halfgeleiderlichaam, bevat- tende een transistor, waarbij een in het halfgeleiderli- chaam verzonken patroon van isolerend materiaal, dat door plaatselijke oxydatie van het halfgeleiderlichaam gevormd is, aanwezig is.

Publications (1)

Publication Number Publication Date
CA926029A true CA926029A (en) 1973-05-08

Family

ID=27483782

Family Applications (1)

Application Number Title Priority Date Filing Date
CA117580A Expired CA926029A (en) 1970-07-10 1971-07-07 Semiconductor device having a transistor

Country Status (6)

Country Link
JP (1) JPS5010101B1 (OSRAM)
BE (1) BE769734A (OSRAM)
CA (1) CA926029A (OSRAM)
CH (1) CH542517A (OSRAM)
FR (1) FR2098324B1 (OSRAM)
SE (1) SE368479B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173101A (en) * 1961-02-15 1965-03-09 Westinghouse Electric Corp Monolithic two stage unipolar-bipolar semiconductor amplifier device
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
FR1458860A (fr) * 1964-12-24 1966-03-04 Ibm Dispositif à circuit intégré, utilisant une lamelle semi-conductrice pré-formée
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3440498A (en) * 1966-03-14 1969-04-22 Nat Semiconductor Corp Contacts for insulation isolated semiconductor integrated circuitry
USRE34420E (en) * 1986-06-19 1993-10-26 Darling James P Sports racquet

Also Published As

Publication number Publication date
DE2133981B2 (de) 1975-07-10
DE2133981A1 (de) 1972-01-13
CH542517A (de) 1973-09-30
SE368479B (OSRAM) 1974-07-01
FR2098324B1 (OSRAM) 1976-05-28
JPS5010101B1 (OSRAM) 1975-04-18
BE769734A (fr) 1972-01-10
FR2098324A1 (OSRAM) 1972-03-10

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