CA923199A - Mos circuit with bipolar emitter-follower output - Google Patents

Mos circuit with bipolar emitter-follower output

Info

Publication number
CA923199A
CA923199A CA083989A CA83989A CA923199A CA 923199 A CA923199 A CA 923199A CA 083989 A CA083989 A CA 083989A CA 83989 A CA83989 A CA 83989A CA 923199 A CA923199 A CA 923199A
Authority
CA
Canada
Prior art keywords
mos circuit
follower output
bipolar emitter
bipolar
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA083989A
Other languages
English (en)
Other versions
CA83989S (fr
Inventor
J. Redwine Donald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of CA923199A publication Critical patent/CA923199A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA083989A 1969-06-26 1970-05-28 Mos circuit with bipolar emitter-follower output Expired CA923199A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83681169A 1969-06-26 1969-06-26

Publications (1)

Publication Number Publication Date
CA923199A true CA923199A (en) 1973-03-20

Family

ID=25272800

Family Applications (1)

Application Number Title Priority Date Filing Date
CA083989A Expired CA923199A (en) 1969-06-26 1970-05-28 Mos circuit with bipolar emitter-follower output

Country Status (6)

Country Link
US (1) US3601630A (da)
CA (1) CA923199A (da)
DE (1) DE2031048A1 (da)
FR (1) FR2053933A5 (da)
GB (1) GB1302952A (da)
NL (1) NL7009127A (da)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702943A (en) * 1971-11-05 1972-11-14 Rca Corp Field-effect transistor circuit for detecting changes in voltage level
US3798466A (en) * 1972-03-22 1974-03-19 Bell Telephone Labor Inc Circuits including combined field effect and bipolar transistors
US4192016A (en) * 1978-10-20 1980-03-04 Harris Semiconductor CMOS-bipolar EAROM
US4301383A (en) * 1979-10-05 1981-11-17 Harris Corporation Complementary IGFET buffer with improved bipolar output
DE3240778A1 (de) * 1982-11-04 1984-05-10 Siemens AG, 1000 Berlin und 8000 München Elektronischer schalter
JPS60136084A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
US4717847A (en) * 1985-04-29 1988-01-05 Harris Corporation TTL compatible CMOS input buffer
JPS63208324A (ja) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp 半導体集積回路装置
US7048979B2 (en) 2004-06-03 2006-05-23 Kraton Polymers U.S. Llc Articles prepared from high molecular weight/low coupled block copolymers

Also Published As

Publication number Publication date
NL7009127A (da) 1970-12-29
FR2053933A5 (da) 1971-04-16
US3601630A (en) 1971-08-24
DE2031048A1 (de) 1971-01-14
GB1302952A (da) 1973-01-10

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