CA908312A - Semiconductor device with a field effect transistor - Google Patents

Semiconductor device with a field effect transistor

Info

Publication number
CA908312A
CA908312A CA908312A CA908312DA CA908312A CA 908312 A CA908312 A CA 908312A CA 908312 A CA908312 A CA 908312A CA 908312D A CA908312D A CA 908312DA CA 908312 A CA908312 A CA 908312A
Authority
CA
Canada
Prior art keywords
semiconductor device
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA908312A
Inventor
Hara Hisashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Publication date
Application granted granted Critical
Publication of CA908312A publication Critical patent/CA908312A/en
Expired legal-status Critical Current

Links

CA908312A Semiconductor device with a field effect transistor Expired CA908312A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA908312T

Publications (1)

Publication Number Publication Date
CA908312A true CA908312A (en) 1972-08-22

Family

ID=36416016

Family Applications (1)

Application Number Title Priority Date Filing Date
CA908312A Expired CA908312A (en) Semiconductor device with a field effect transistor

Country Status (1)

Country Link
CA (1) CA908312A (en)

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