CA875798A - High voltage planar p-n junction semiconductor device - Google Patents

High voltage planar p-n junction semiconductor device

Info

Publication number
CA875798A
CA875798A CA875798A CA875798DA CA875798A CA 875798 A CA875798 A CA 875798A CA 875798 A CA875798 A CA 875798A CA 875798D A CA875798D A CA 875798DA CA 875798 A CA875798 A CA 875798A
Authority
CA
Canada
Prior art keywords
semiconductor device
high voltage
junction semiconductor
voltage planar
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA875798A
Inventor
Naomoto Susumu
Kaneko Tadataka
Esaki Hideya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Hideya Esaki
Susumu Naomoto
Tadataka Kaneko
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Publication date
Application granted granted Critical
Publication of CA875798A publication Critical patent/CA875798A/en
Expired legal-status Critical Current

Links

CA875798A High voltage planar p-n junction semiconductor device Expired CA875798A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA875798T

Publications (1)

Publication Number Publication Date
CA875798A true CA875798A (en) 1971-07-13

Family

ID=36361704

Family Applications (1)

Application Number Title Priority Date Filing Date
CA875798A Expired CA875798A (en) High voltage planar p-n junction semiconductor device

Country Status (1)

Country Link
CA (1) CA875798A (en)

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