CA845887A - Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminium - Google Patents

Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminium

Info

Publication number
CA845887A
CA845887A CA845887A CA845887DA CA845887A CA 845887 A CA845887 A CA 845887A CA 845887 A CA845887 A CA 845887A CA 845887D A CA845887D A CA 845887DA CA 845887 A CA845887 A CA 845887A
Authority
CA
Canada
Prior art keywords
layer
aluminium
semiconductor device
silicon oxide
device provided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA845887A
Inventor
J. B. Van Laer Karel
V. W. T. Bloemendal Frans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Publication date
Application granted granted Critical
Publication of CA845887A publication Critical patent/CA845887A/en
Expired legal-status Critical Current

Links

CA845887A Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminium Expired CA845887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA845887T

Publications (1)

Publication Number Publication Date
CA845887A true CA845887A (en) 1970-06-30

Family

ID=36330105

Family Applications (1)

Application Number Title Priority Date Filing Date
CA845887A Expired CA845887A (en) Semiconductor device provided with an insulating layer of silicon oxide supporting a layer of aluminium

Country Status (1)

Country Link
CA (1) CA845887A (en)

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