CA2824309A1 - Led white light source with remote photoluminescent reflecting converter - Google Patents

Led white light source with remote photoluminescent reflecting converter Download PDF

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Publication number
CA2824309A1
CA2824309A1 CA2824309A CA2824309A CA2824309A1 CA 2824309 A1 CA2824309 A1 CA 2824309A1 CA 2824309 A CA2824309 A CA 2824309A CA 2824309 A CA2824309 A CA 2824309A CA 2824309 A1 CA2824309 A1 CA 2824309A1
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Prior art keywords
light
heat
reflector
radiation
converter
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Abandoned
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CA2824309A
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French (fr)
Inventor
Vladimir Nikolaevich Ulasyuk
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Zakrytoe Aktsionernoe Obschestvo <<nauchno-Proizvodstvennaya Kommercheska Ya <<eltan Ltd>> Firma
Original Assignee
Zakrytoe Aktsionernoe Obschestvo <<nauchno-Proizvodstvennaya Kommercheska Ya <<eltan Ltd>> Firma
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Publication of CA2824309A1 publication Critical patent/CA2824309A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0008—Reflectors for light sources providing for indirect lighting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/005—Reflectors for light sources with an elongated shape to cooperate with linear light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/04—Optical design
    • F21V7/043—Optical design with cylindrical surface
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
    • F21V7/30—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings the coatings comprising photoluminescent substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/233—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/505—Cooling arrangements characterised by the adaptation for cooling of specific components of reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

The invention relates to white-light lamps based on semiconductor light-emitting diodes with remote photoluminescent converters. The essence of the invention is that the lamp comprises a heat-dissipating base with a radiation exit opening, and light-emitting diodes secured about the periphery of the opening, with, arranged in series at a distance from said light-emitting diodes, a radiation converter in the form of a concave layer of photoluminescent material, and a light reflector with a concave light-reflecting surface, wherein the concavities of the radiation converter and the light reflector are oriented towards the light-emitting diodes and the exit opening. When primary radiation from the light-emitting diodes falls on the surface of the converter, white light generated as a result of the mixing of the reflected primary radiation with secondary radiation from the photoluminescent material exits via the opening in the heat-dissipating base. The surfaces of the converter and the reflector may be in the form of a truncated ellipsoid of revolution, in particular a sphere, or a paraboloid, with a main axis perpendicular to the plane of the opening in the heat-dissipating base, or a cylinder which is truncated by the plane of the exit opening. In order to improve the dissipation of heat, thermal contact is provided between the convex surface of the converter and the concave inside surface of the reflector, the outside surface of which can be in the form of a ribbed heat radiator associated with the heat-dissipating base.

Description

LED White Light Source with Remote Photoluminescent Reflecting Converter The present invention relates to electrical and electronic equipment, and more particularly to light sources based on semiconductor light-emitting diodes (LEDs), more particularly to a white light source based on LEDs with conversion photoluminescent phosphors.
Solid-state lighting technology is starting to conquer the white lighting market, thanks to recent advances in the development of efficient LEDs, especially nitride (InGaN), and the highest achievable lighting efficiency of all white light sources known in the art. LED
solutions are widely used in the lighting apparatus, such as linear and street illuminators wherein the illuminator is relatively large, and intensely heated LEDs can be distributed so as to facilitate the efficient removal of heat from them. The development of LED
replacements for standard incandescent and halogen lamps having a small form factor and a high luminous flux, in view of significant prospects for solving the energy saving problem, is one of the most critical scientific and technical tasks; however, its solution is significantly hindered by the limited space for installing the control electronics (drivers) and a relatively small surface area for removal of heat emitted by LEDs in such lamps. White LEDs often include a blue LED
coated with YAG:Ce phosphor. High-power (one watt or more) blue LEDs have an efficiency of about 30-45%, with approximately 550-700 mW allocated to unit heating from each applied watt. Furthermore, it is believed that when phosphor converts the blue light into the yellow one in white LEDs, approximately 20% of the incident light energy is spent for phosphor heating. Technical specifications indicate that blue LED radiation power loss is about 7% at the temperature of 25 - 125 C, while power loss of white LEDs is about 20% at the same temperature. Thus, high-power white LEDs have substantial limitations on heat and luminous fluxes.
The objective of the present invention is to provide a LED lamp with a small form factor, wherein the problems of the known technical solutions have been overcome, to replace standard lamps.
The structure of any LED lamp designed to replace standard white light lamps is based on LED chips. White light results from mixing of radiation emitted from LED chips and different light colors such as blue, green and red, or blue and orange, etc.
However, in recent years LED white light sources with photoluminescent phosphor converters, which radiate yellow or orange (red) light while absorbing blue or UV radiation of LED chip, are becoming the most widespread light sources. Fig. 1 shows a diagram explaining the operating principle of a white light source of this type.
The apparatus comprises a LED chip that emits primary relatively shortwave radiation and a conversion photoluminescent phosphor medium which is irradiated with the said relatively shortwave radiation and which, upon irradiation by the specified relatively shortwave radiation, is excited and emits in response a second radiation with relatively longer waves. In the particular embodiment, the monochrome blue or UV radiation emitting from the chip is converted to white light by placing the chip in organic and/or inorganic phosphors (photoluminescent phosphors) in a polymer matrix.
Fig. 2 shows a known LED white light source with photoluminescent phosphor conversion, as described in U.S. Patent US 6,351,069.
White light source 110 includes a nitride LED chip 112, which, when excited, emits primary blue radiation. The chip 112 is placed on the conductive frame of the reflector cup 114 and is electrically connected to conductors 116 and 118. Conductors 116 and 118 supply the chip 112 with electric power. The chip 112 is covered with the transparent resin layer 120 that includes conversion material for converting the wavelength of radiation 122.
Conversion material type used to form layer 120 can be selected depending on the desired spectral distribution of the secondary radiation produced by material 122. The chip 112 and the fluorescent layer 120 are covered by a lens 124. The lens 124 is typically made of a transparent epoxy or silicone. When using a white light source the voltage is applied to the chip 112, wherein the primary radiation is emitted by the upper surface of the chip. The emitted primary radiation is partially absorbed by the conversion material 122 in the layer 120. Thereafter the conversion material 122, in response to the absorption of the primary light, emits secondary radiation, i.e. converted light having a peak with a longer wavelength. The remaining unabsorbed portion of the emitted primary radiation is transmitted through the conversion layer together with the secondary radiation. The lens 124 directs the unabsorbed primary radiation and the secondary radiation in a general direction indicated by the arrow 126 as outgoing light. Thus, the outgoing light is a complex light which is composed of the primary radiation emitted by the chip 112 and the secondary radiation emitted by the conversion layer 120. The conversion material can also be configured so only a small portion or even all primary light remains in the device as in the case of a chip that emits primary UV light combined with one or more conversion materials emitting visible secondary light.
The aforementioned apparatus known in the art, wherein a photoluminescent phosphor layer is formed on LED surface, has several disadvantages. It is difficult to achieve color uniformity when photoluminescent phosphor is in direct mechanical, optical and thermal contact with the LED surface due to significant changes in the light path length depending on the angle of radiation propagation through the photoluminescent phosphor layer.
Furthermore, high temperature of the heated LED can undesirably alter the color coordinates of the photoluminescent phosphor or can lead to its degradation.
In order to eliminate the specified disadvantages we propose white light sources with a wavelength converter remote from LED, which operating principle is explained in Fig. 3.
The arrangement of the illuminator built according to this principle and described, for instance, in U.S. Patent US 6,600,175 (B1) is shown in Fig. 4.
This white light source comprises a shell 207 formed by a transparent medium 211, with an internal volume. The medium 211 can be formed by any suitable material that transmits light, such as transparent polymer or glass. The internal volume of the medium 211 comprises a light emitting diode (LED) 213 chip placed on the base 214. First and second electrical contacts 216 and 217 are connected to radiating and back sides 218 and 219 of the LED 213 chip, respectively, and to a radiating side 218 of the LED, which is next to the first electrical contact 216 by the conductor 212. The light transmitting medium 211 is associated with fluorescent and/or phosphorescent components, or mixtures thereof, in other words, photoluminescent phosphor medium which converts the radiation emitted by the side 218 of the LED 213 into white light.
Photoluminescent phosphor is scattered in the shell 207 of the medium 211 and/or is arranged in the form of a film coating 209 on the inner wall of the shell 207 surface.
Alternatively, photoluminescent phosphor can be a coating on the outer wall of the assembly (not shown) shell if the shell is used exclusively in the environment, wherein such an outer coating can be satisfactorily maintained (e.g., where it is not subject to abrasion or degradation).
For example, photoluminescent phosphor can be distributed in polymer, or glass melt, from which the shell is formed to provide a homogeneous composition of the shell and ensure light output from the entire surface of the shell.
Elongated white LED illuminator with remote cylindrical converter is known in the art, as described in U.S. patent US7,618,157 Bl. Its arrangement is schematically shown in Fig. 5.
The illuminator 310 comprises a linear heat sink 312, a plurality of the LEDs 314 mounted on the heat sink 312 along the long side of the heat sink, and the light emitting dome 316 mounted on the heat sink 312 on one line with the LEDs 314, wherein a portion 318, half-round in section, of the dome 316 located against the LEDs 314 comprises a photoluminescent phosphor 320 which is excited by the light from the LEDs. The heat sink 312 is made of heat-conductive material, such as aluminum. The dome 316 is made of transparent material, such as glass or plastic. The photoluminescent phosphor 320 can be applied as a coating on the inner side of the dome or introduced into the coating material. The flat portions 326 without photoluminescent phosphor which are attached to the heat sink on both sides of the LEDs have internal reflective surfaces 328, for example, aluminum coatings reflecting light which comes from the LEDs 314 to the dome portion 318.
The conversion layer can comprise photoluminescent phosphor material, quantum dot material, or a combination of such materials, and can further comprise a transparent host material, wherein phosphor material and/or quantum dot material are dispersed.
It is known that the layers that contain powdered photoluminescent phosphor materials can conduct, absorb, reflect and dissipate the light incident on them. When this layer dissipates the light, it can also conduct, absorb and reflect some of the scattered light.
Due to this fact a common disadvantage of said known inventions is that the radiation excited in photoluminescent phosphor grains under the influence of LED
radiation as well as reflected LED radiation are inevitably partially absorbed in the photoluminescent phosphor layer and on inner elements of the apparatus, which reduces efficiency of the white light source.
Yamada [1] and Narendran [2] determined the ratio of portions of the radiation propagating back and forth from the conversion layer of the photoluminescent phosphor YAG:Ce excited by blue light radiation with a wavelength of about 470 nm, which is converted into yellow wavelength range radiation. Narendran proved that in this case more than 60% of the light emitted and reflected by the conversion layer extends back to the excitation source, and a large portion of this light is lost within the LED assembly [2]. In [3] it is proved that even in the case of YAG:Ce photoluminescent phosphor with optical refractive index 1.8, which is mixed in epoxy resin with optical refractive index 1.6 at the photoluminescent phosphor density of 8 mg/cm2, which allows creating a balanced white light portions of back-directed and passed forth radiation, including blue and yellow light radiation, are 53% and 47%, respectively, while for the yellow light only such portions are 55% and 45%, respectively.
Therefore, a significant gain in light flux and maximum possible efficiency of LED
conversion white light sources can be achieved in all conditions being equal, by directing the radiation coming from the photoluminescent phosphor surface immediately irradiated by LED
radiation to the exit aperture of the LED light source to a remote converter.
Similar technical solution is proposed in patent US7,293,908 B2 in which one of the claimed embodiments of the lighting system with side light radiation coupling, which is completed according to this patent, includes a conversion layer which is remote from the LED
and located on the light reflector.
This apparatus is most similar to the apparatus according to the present invention and, therefore, chosen as the prototype.
The operating principle of the white light source with side light radiation coupling implemented in accordance with the present patent is explained in Fig. 6, which shows a cross-section of one of the claimed embodiments of the lighting system with side light radiation coupling.
The lighting system with side light radiation coupling comprises a LED 402, the first reflector 404, the second reflector 406, an exit aperture 412, a conversion layer 602, an additional transparent covering layer 408, and supporting means which support and separate the second reflector 406 from the first reflector 404. The supporting means include a flat transparent element 502, side supports 504 and a base 506. The side supports 504 are, preferably, transparent or reflective. The first reflector 404 is attached to the base 506. The second reflector 406 is attached to the flat transparent element 502. The conversion layer 602 is located on the second reflector 406 surface and converts at least a portion of the primary radiation emitted by the active area of the LED 402 into radiation with the wavelength different from the primary radiation wavelength.
For the illustrative purposes let us consider light beams 414, 415 and 416 which explain the operation of the lighting system with side light radiation coupling. The light beam 414 of the first color is emitted by the LED 402 active area and directed to the LED 402 output surface.
The light beam 414 of the first color passes through the LED 402 output surface and is directed to a transparent covering layer 408. The light beam 414 of the first color passes through the transparent covering layer 408 and is directed to the conversion layer 602 which converts the light beam 414 of the first color in the light beam 415 of the second color different from the first color. Light of the second color can be emitted in any direction from the point of wavelength conversion. The beam 415 of the second color is directed through the transparent covering layer 408 and, then, directed through the exit aperture 412 to the first reflector 404. The light beam 416 of the second color is reflected by the first reflector 404 and directed to the flat transparent element 502. The light beam 416 of the second color passes through the flat transparent element 502 and comes out the lighting system with side light radiation coupling.
The disadvantage of this system is large aperture losses and loss of light at the boundaries of the supporting means and on the reflectors.
An attempt to overcome these disadvantages was made in another known white light source of searchlight type described in U.S. Patent US 7,810,956 B2.
Fig. 7 illustrating the arrangement and the operating principle of such apparatus, is a cross-section view of a searchlight lamp according to one of the embodiments of the invention claimed in the U.S. patent US 7,810,956 B2. The light source 730 is placed on a fastener 734 and an additional thermal heat sink 736. The thermal heat sink 736 can be finned, as shown in Fig. 7. The light emitted by the source 730 and reflected from the mirror 732 surrounding the light source 730 is radiated in an optical plate 738. The wavelength conversion layer 742 is separated from the light source 730 and placed so the light from the source 730 can be received.
The additional thermal heat sink 744 can cool the conversion layer 742. The collecting optics 740 collimates the light. As the light source 730, a LED which generates shortwave light, e. g.
blue or ultraviolet light, can be used. The light source 730 can be placed on the additional fastener 734 and attached to the additional thermal heat sink 736. The optical plate 738 can be formed so that it directs light to the collecting optics 740. For example, the sides 748 can be inclined or bent so that the total internal reflection directs light to the collecting optics 740.
The disadvantage of this system is large aperture losses and loss of light at the boundaries of the optical plate with the light source, mirrors, and the conversion layer, which eliminate its efficiency. Furthermore, the light beam outgoing from the collimating optical system is rather thin, which is not acceptable when using this illuminator as a replacement for standard lamps with small form factor, which have sufficient angular aperture of emitted light beam, even if the halogen lamps are used.
The proposed invention is based on the objective to provide maximum efficiency of LED
white light source with a remote converter, to provide high color uniformity and rendering, as well as wide angular aperture of the light beam when form factor of the illuminator is small.
An illuminator proposed in the present invention comprises a primary radiation source with one or more LEDs, a heat-removing base with flat peripheral part which the said LEDs are attached to, a reflector with light-reflective surface facing the LEDs, a conversion layer converting the primary radiation into the secondary radiation, which is placed between the LEDs and the reflector. The set problem is solved so that the heat-removing base for light radiation coupling has an aperture which edge is in close proximity of the LEDs being placed on the heat-removing base, and the specified surface of the conversion layer, which is irradiated by the LEDs, and the reflector surface have a concave shape with the concave side facing the primary radiation source and the aperture.
The disclosure of the invention is explained in Fig. 8 which schematically shows cross-section of the proposed illuminator.
The illuminator comprises a primary radiation source with one or more LEDs 1, a heat-removing base 2 with an aperture 3 and a surface 4 which the said LEDs 1 are attached to, a reflector 5 with a light-reflective surface 6 facing the LEDs, a conversion layer 7 converting primary radiation 8 into secondary radiation 9, which has a concave surface 10 facing the LEDs 1, and a second convex surface 11 facing the light-reflective surface 6 wherein the conversion layer 7 is placed between the LEDs 2 and the reflector 6 surface.
The illuminator functions as follows: The primary radiation 8 of the LED 1 reaches the surface 10 of the conversion layer 7, then reflects partially from the surface 10, exiting through the aperture 3 of the heat-removing base 2, reflects partially from the surfaces of photoluminescent phosphor grains, being dissipated in the conversion layer 7, is absorbed partially by the conversion layer 7 material transforming into secondary radiation 9;
concurrently, a portion of the primary radiation 8 which has reached the light-reflective surface 6, reflects back into the conversion layer 7 and is again partially absorbed by the material of the conversion layer 7 with the conversion into secondary radiation 9 by the photoluminescent phosphor of the conversion layer 7. In this case, a certain portion of the primary radiation 8 exits the conversion layer through the aperture 3 of the illuminator and mixes with the secondary radiation 9 to form white radiation, the spectral distribution of which is determined by the properties of the conversion layer materials, primarily, by their composition, the photoluminescent phosphor dispersion and the thickness of the conversion layer.
Photoluminescent phosphors are usually optical inorganic materials doped with ions of rare earth elements (lanthanides), or, alternatively, ions of the elements, such as chromium, titanium, vanadium, cobalt or neodymium. Lanthanide elements are lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium. Optical inorganic materials include (but are not limited to): sapphire (A1203), gallium arsenide (GaAs), beryllium aluminum oxide (BeA1204), magnesium fluoride (MgF7), indium phosphide (InP), gallium phosphide (GaP), yttrium aluminum garnet (YAG or Y3A15012), terbium-containing garnet, yttrium-aluminum-lanthanide oxide compounds, compounds of yttrium, a lanthanide-aluminum-gallium oxides, yttrium oxide (Y203), calcium or strontium or barium halophosphates (Ca,Sr,Ba)5(PO4)3(C1,F), the composition CeMgAli1019, lanthanum phosphate (LaPO4), lanthanide pentaborate materials ((lanthanide) (Mg, Zn) B5010), the composition BaMgA110017, the composition SrGa2S4, compounds (Sr,Mg,Ca,Ba)(Ga,A1,1n)2S4, the composition SrS, the composition ZnS and nitride silicates.
There are several typical photoluminescent phosphors which can be excited by UV
radiation with a wavelength of 250 nm or close to this. A typical red-emitting photoluminescent phosphor is Y703:Eu+3. A typical yellow-emitting photoluminescent phosphor is YAG:Ce+3.
Typical green-emitting photoluminescent phosphors include: CeMgAli 1019:Tb<3+>, (lanthanide) PO4:Ce+3,Tb+3 and GdMgB5010:Ce+3,Tb+3. Typical blue-emitting photoluminescent phosphors are BaMgA110017:Eu+2 and (Sr,Ba,Ca)5(PO4)3C1:Eu+2. For a LED of excitation with a longer wave with the wavelength range of 400-450 nm or close to it, the typical optical inorganic materials include yttrium aluminum garnet (YAG or Y3A15012), terbium-containing garnet, yttrium oxide (Y203), YV04, SrGa2S4, (Sr,Mg,Ca,Ba)(Ga,A1,In),S4, SrS, and nitride silicates.
Typical photoluminescent phosphors for LED of excitation in the wavelength range of 400-450 nm include YAG:Ce+3, YAG:Ho+3, YAG:Pr+3, SrGaiS4:Eu+2, SrGa2S4:Ce+3, SrS:Eu+2 and nitride silicates doped with Eu+2.
Quantum-dot materials are inorganic semiconductor fine particles of less than about 30 nm. Typical quantum-dot materials include (but are not limited to) particles of CdS, CdSe, ZnSe, InAs, GaAs and GaN. Quantum-dot materials can absorb light of one wavelength and then re-emit the light with different wavelengths, which depend on the particle size, particle surface properties, and the inorganic semiconductor material.
The conversion layer can include both one type of photoluminescent phosphor material or quantum-dot material and a mixture of photoluminescent phosphor materials and quantum-dot materials. Using a mixture of more than one of such material is appropriate if it is desirable to have a wide spectral range of the emitted white light (high color rendering).
One of the typical approaches to obtain warm white light with high color rendering index is mixing radiation of InGaN LED with the radiation of the mixture of yellow and red conversion photoluminescent phosphors. The conversion layer can include several photoluminescent phosphors that absorb the light emitted by the LED and emit light with a longer wavelength. For example, for blue LEDs, the conversion layer can include a single photoluminescent phosphor emitting yellow light, or several photoluminescent phosphors that emit red and green light. For ultraviolet LEDs, the conversion layer can include photoluminescent phosphors emitting blue and yellow light, or photoluminescent phosphors emitting blue, green, and red light.
Photoluminescent phosphors can be added that emit additional colors, in order to control the color coordinates and the rendering of the mixed light outgoing from the illuminator.
Transparent host materials can include polymer and inorganic materials.
Polymer materials include (but are not limited to): acrylates, polycarbonate, fluoroacrylates, perfluoroacrylates, fluorophosphinate polymers, fluorosilicones, fluoropolyimides, polytetrafluoroethylene, fluorosilicones, sol-gels, epoxy resins, thermoplastics, heat-shrink plastics and silicones. Fluorine-containing polymers are especially useful in the ultraviolet ranges of wavelengths shorter than 400 nm and infrared wavelengths longer than 700 nm, due to their low absorption of light at these wavelength ranges. Typical inorganic materials include (but are not limited to): silicon dioxide, optical glasses, and chalcogenide glasses.
The photoluminescent phosphor of the conversion layer can conformally be applied as coating to the surface of the light reflector, e.g., by pulverizing, pasting, deposition or electrical endosmosis from the photoluminescent phosphor suspension in the liquid. One of the problems related to coating the reflector with photoluminescent phosphor is applying a uniform reproducible coating on the reflector, especially if the reflector has a non-planar surface, for example, cylindrical or hemispherical. Liquid suspensions are used to apply photoluminescent phosphor particles to the substrate when the pulverizing, pasting, deposition methods are applied. The uniformity of coating greatly depends on the viscosity of the suspension, particle concentration in suspension, and environmental factors, such as ambient temperature and humidity. Coating defects due to flows in the suspension before drying, and daily changes of the coating thickness are classified as ordinary problems.
In some cases, it is preferable to add the photoluminescent phosphor into the coating material, for example, transparent plastic, such as polycarbonate, PET, polypropylene, polyethylene, acrylic, shaped by extrusion. In this case, the conversion layer can be pre-manufactured in sheets, which are then heat molded into the desired shape.
Before molding, the light-reflective coating made of, for example, aluminum or silver can be applied to one surface of the sheet by vacuum deposition.
The conversion layer of the conformally preformed reflective surface of a heat radiator can be attached to it, for example, with a silicone adhesive located between the conversion layer and the reflective surface of the heat radiator. In this case, the adhesive layer can be thin, thinner, for example, than the conversion layer, and can not maintain a large thermal resistance to the heart removal from the conversion layer.
In one of specific embodiments of the illuminator, a preformed sheet is used, which is pasted to a copper or brass cylindrical reflector with a thin layer of aluminum (0.5 gm), which is applied by vacuum thermal evaporation. An organic solvent is used to prepare the suspension of photoluminescent phosphor, surface-active agents (surfactants) and the polymer. The suspension can then be formed into a sheet by extrusion or mold casting or it can be poured on a flat substrate, for example, a glass one, followed by drying. The resulting sheet can be separated from the temporary substrate and attached to the reflector, using a solvent or cyanoacrylate adhesive. The reflector coated with the sheet is heated at 480 C, and the polymer matrix burns down, leaving the photoluminescent phosphor coating.
In a specific example, sheets of different thicknesses, as shown in Fig. 9, were formed by extrusion from the suspension of particles of an experimental photoluminescent phosphor based on yttrium-gadolinium-cerium aluminium garnet (Y,Gd,Ce)3A15012 in a polycarbonate solution in methylene chloride. The conversion layer must be sufficiently thick to achieve the necessary color coordinate values of mixed white light outgoing from the illuminator aperture. The effective thickness is defined based on optical scattering processes in photoluminescent phosphors used and ranges, for example, between 5 and 500 pm, most often between 100 and 250 gm.
The sheet was secured to a cylindrical reflector by way of moistening the reflector with isopropanol and applying pressure to the sheet using a male die of a desired shape. The solvent softens the sheet and allows squeezing out air bubbles from under it to ensure full adhesion of the sheet to the reflector. The coated reflector was annealed in air at 480 C
to burn off the polymer, resulting in the cylindrical reflector covered with the photoluminescent phosphor. The reflector of a less complicated shape can be coated with a mixture of photoluminescent phosphor with transparent silicone binder; then, the mixture is annealed. In this case, the silicone binder is not removed by annealing. It must be borne in mind that photoluminescent phosphor, which converts blue light in the orange-red one, can degrade until complete uselessness after is has been heated to 480 C in air. In this case, other polymers with a lower burning-off temperature must be used. In some embodiments, the burning-off temperature ranges from 260 C to 540 C.
The surface of the conversion layer can be additionally coated with a transparent protective layer, which prevents the ingress of moisture and/or oxygen into the conversion layer, as some types of photoluminescent phosphors, e.g., sulfide one, are prone to damage from moisture attacks. The protective layer can be made of any transparent material which prevents moisture and/or oxygen from penetrating into the conversion layer, for example, made of inorganic materials, such as silicon dioxide, silicon nitride or aluminum oxide, and organic polymers or combinations of polymeric and inorganic layers. The preferable materials for the protective layer are silicon dioxide and silicon nitride.
The protective layer can also optically clear the boundary of a photoluminescent phosphor grain with the atmosphere and can reduce the reflection of the LED
primary radiation and the secondary radiation of the photoluminescent phosphor on this boundary, reducing the absorption losses of the photoluminescent phosphor self-radiation in its grains, thereby increasing the efficiency of the illuminator.
The protective layer can also be applied by finishing surface treatment of photoluminescent phosphor grains, which, among other things, causes to form a nano-sized 50-100 nm film of zinc silicate on the surface of the grains, that clears the boundary of the photoluminescent phosphor grain.
Where necessary, the aperture can be additionally hermetically sealed with an optically transparent window that protects the conversion layer from moisture and/or oxygen, while the internal volume of the illuminator can be filled with an inert atmosphere, or evacuated.
The surface 10 of the converter 7 and the surface 6 of the reflector 5 can be shaped as axisymmetric figures (a sphere, ellipsoid, paraboloid, or otherwise) or surface symmetric figures (e.g., cylinder), truncated by a plane, which is, for example, parallel to the plane of the aperture 3 in the heat-removing base 2; in this case, the LEDs 1 are located near and along the conventional line of intersection of the said surface of the heat-removing base 2 with the said surface 10 of the converter 7.
The optimization of the converter surface 10 shape and of the location of the LED based on their radiation directivity diagram allows improving the color uniformity and angular distribution of the radiation coming out of the illuminator due to the incidence of the LED
radiation to the converter surface 10 at different angles and redistribution of the reflected radiation inside the cavity of the converter 7 before its exit from the aperture.
As known from the specifications, say, for SemiLEDs chips of strong blue LED
SL-V-1345AC2 or EZBright1000 family chips manufactured by CREE, the radiation directivity diagram of LED chips can have the Lambertian distribution (a light cone with an angle of obliquity of 90 to the surface of the LED chip) or be limited to a less cone with the angle a <900, for example, when radiation is coupled out using a quantum-sized lattice structure formed on the surface of the LED chip.
In this case, the LED can be located on the heat-removing base in such a way that the axis of the LED radiation directivity diagram intersects the axis of symmetry of the reflector at an angle p ?_ 90 - a/2.
However, a certain relatively small part of the LED primary radiation propagates directly outwardly the illuminator aperture; and to avoid the possible user's direct eye contact with the LED light, the heat-conducting base 2 can comprise a protrusion 12 that screens the direct yield of the primary radiation outwards the illuminator, bypassing the surface 10 of the converter 7.
To ensure a more complete utilization of the LED primary radiation, the said protrusion 12 of the heat-conducting base 2 comprises an additional reflector ¨ a flat mirror part 13 that directs the primary radiation falling on it towards the surface 10 of the converter 7.
The embodiment of the illuminator comprising an additional reflector is schematically shown in Fig. 10 in more details.
The illuminator in this embodiment includes a protruding part 12 with a reflective coating 13 in addition to the elements shown in Fig. 8 and numbered in the same way as in Fig. 8.
Another specific embodiment of the illuminator with an additional reflector is shown in details in Fig. 11, which shows an enlarged sectional view of the illuminator in the area of the base 2 with fixed LEDs 1 where the corresponding components are numbered in the same way as in Fig. 8 (not to scale).
The additional reflector is an inclined surface 15 (for example, a truncated conical surface put the base upwards in the case of an axisymmetrically shaped converter) located between the LED chips 1 and the converter 7, the reflection from which allows almost completely redirecting the portion of the LED chips I radiation falling onto it to the opposite side of the converter 7, which homogenizes the outgoing radiation of the illuminator.
To increase the reflection of light emitted by the LEDs and the conversion layer, the surface of the reflector in the heat radiator can be, among other things, polished or matted to homogenize the radiation and it can be covered with a coating with a high optical reflectance.
The surface of the light reflector can also be made as a separate mirror distanced from the heat radiator, but maintaining a thermal contact with it through a thermally conductive layer.
Examples of suitable coatings and materials for highly reflective coatings include silver;
aluminum; dichroic coatings; aluminum combined with a dichroic coating to enhance the reflection coefficient of aluminum; and materials, such as titanium oxide and aluminum oxide, formed by the sol-gel method.
In this embodiment of the illuminator, the LED chips 1 are located on the base 2 so that the normal to the surface of the LED chip 1 is parallel (or makes a small angle) to the axis of symmetry of the reflector 6 made as a 0.15-0.2 gm thick reflecting aluminum or silver film applied by vacuum thermal deposition to the inner surface of a hemispherical glass cap 17, glued with an elastic heat-resistant compound 18 to the aluminum hemispherical cap 19, which acts as the second common electrode for the LED chips 1 that are connected to it in parallel by means of the conductors 14 and the polyimide ribbon 16 with the metallic coating 15. To enhance the light reflectivity, the metallic coating 15 on the polyimide ribbon is coated with a thin aluminum layer and serves as an additional reflector in addition to being the electric contact. With this layout of the LEDs, their primary radiation does not directly enter the eye of an observer.
The first electrode is the base 2, to which the LED chips 1 are soldered, and the heat radiator 22 that is in electrical and thermal contact with the base 2.
Electrical power is supplied to the cap 19 by the central cylindrical output (not shown on Fig. 11) that is welded (or soldered) to the top of the cap 19 in axial alignment with the axis of symmetry of the reflector 6 and connected through an electrically insulated hole in the inner surface 21 of the heat radiator 22 to the supply driver located in the corresponding cavity made in the upper part of the heat radiator body (not shown).
The hemispherical cap 19 is bonded with the heat-resistant heat-conducting compound 20 to the inner surface 21 of the heat radiator 22 body.
The hemispherical cap 17 can also be made of heat-conducting ceramic. The hemispherical cap 19 can also be made of stainless steel, copper, brass, Kovar, or any similar material.
If the cap 19 is made of Kovar or another similar alloy that has relatively good thermal conductivity and a relatively low coefficient of thermal expansion, which is closest to the thermal expansion coefficient of the photoluminescent phosphors used in the converter 7, the design of the illuminator can be simplified and made cheaper and it can be made without the cap 17. To this end, the reflecting aluminum or silver film is applied by vacuum thermal deposition (or otherwise) to the inner surface of the Kovar cap 19, either directly or via an intermediate thin-film dielectric coating, followed by deposition of a photoluminescent phosphor layer using one of the previously described methods.

If the cap 19 is made of aluminum, stainless steel, copper, brass or similar materials with a relatively high coefficient of thermal expansion that is closest to the coefficient of thermal expansion of the converter 7 made of plastics with photoluminescent phosphor filler, the illuminator also can be made without cap 17. To this end, the inner surface of the cap 19 is polished and/or the reflecting aluminum or silver film is applied by vacuum thermal deposition, either directly or via an intermediate thin-film dielectric coating, followed by bonding a preformed plastic converter 7.
LED chips 1 and wire contacts 14 can be sealed with the optical compound 23 using the known technology applied in the manufacture of LED assemblies.
The heat radiator 22 can be made of any suitable material, such as copper or aluminum.
The heat radiator can be ribbed to increase the heat transfer surface, for example, as shown in Fig. 12.
The sheets shown in Fig. 9, using SL-V-B35AK-type LED chips manufactured by SemiLEDs, were used to manufacture samples of white linear semicylindrical illuminators, that achieved the effectiveness of 160-200 lm/W, depending on the sheet thickness.
References I. Yamada, K., Imai, Y. and Ishii K., "Optical Simulation of Light Source Devices Composed of Blue LEDs and YAG Phosphor," I Light & Vis. Env. 27(2), 70-74 (2003).
2. Narendran, N., Gu. Y., Freyssinier, J., Zhu, Y., "Extracting Phosphor-scattered Photons to Improve White LED Efficiency," Phys. Stat. Sol. (a) 202(6), R60-R62 (2005).
3. Zhu Y., N. Narendran, and Y. Gu. "Investigation of the optical properties of YAG:Ce phosphor". Sixth International Conference on Solid State Lighting. Proceedings of SPIE. 6337, 63370S (2006).

Claims (11)

1. An illuminator comprising a primary radiation source consisting of one or more light-emitting diodes; a heat-removing base with a surface on which the said light emitting diodes are secured;
a radiation converter designed as a conversion material layer which converts the primary radiation of the light emitting diodes, which falls on its surface, into secondary radiation; and a reflector with a surface that reflects the radiation falling on it; and the radiation converter is situated between the primary radiation source and the reflector near the said reflector surface;
and the reflector and the converter are located at a distance from the primary light source;
WHEREIN the heat-removing base has an orifice for radiation output and the said surface of the converter, which is irradiated by the light-emitting diodes, and the surface of the reflector have a concave shape the concave of which faces the said orifice and the light-emitting diodes; and the light-emitting diodes are located near the perimeter of the orifice.
2. The illuminator according to Claim 1, wherein the surfaces of the converter and the reflector are shaped as axisymmetric figures, truncated by a plane parallel to the plane of the orifice in the heat-removing base, for example, as an ellipsoid of revolution, in particular, a sphere or a paraboloid, with the main axis perpendicular to the plane of the orifice in the heat-removing base.
3. The illuminator according to Claim 1, wherein the surfaces of the converter and the reflector are shaped as surface symmetric figures, truncated by a plane parallel to the plane of the orifice in the heat-removing base, for example, as a truncated cylinder with the axis of symmetry perpendicular to the plane of the orifice in the heat-removing base.
4. The illuminator according to Claim 1, wherein the heat-removing base comprises a protrusion that prevents the direct output of primary radiation into said orifice.
5. The illuminator according to Claim 1, wherein the said reflector surface is the inner surface of a heat-removing radiator with a ribbed outer surface.
6. The illuminator according to Claim 2, wherein the said surfaces of the converter and reflector consist of a plurality of flat facets or segments.
7. The illuminator according to Claim 3, wherein the heat-removing base of the primary radiation source is integral with the reflector.
8. The illuminator according to Claim 1, wherein the convex surface of the converter, opposite to its concave surface, which is irradiated by primary radiation, and the concave surface of the reflector are separated with an optically transparent medium.
9. The illuminator according to Claim 4, wherein the said protrusion of the heat-removing base comprises a flat mirror part that directs the primary radiation falling on it to the opposite surface of the converter.
10. The illuminator according to Claim 3, wherein the light-emitting diodes are secured on the heat-removing base so that the axis of the radiation directivity diagram of each light-emitting diode intersects the axis of symmetry of the reflector at an angle equal to or less than the difference between 90° and a half-width of the directivity diagram of each said light-emitting diode.
11. The illuminator according to Claim 3, wherein the light-emitting diodes are secured on the heat-removing base so that the axis of the radiation directivity diagram of each light-emitting diode is parallel to or makes a acute angle with the axis of symmetry of the reflector; the heat removing base between the surface of the converter and the light-emitting diodes comprises an inclined reflecting mirror part that directs primary radiation falling onto it to the opposite surface of the converter.

The invention relates to white-light lamps based on semiconductor light-emitting diodes with remote photoluminescent converters. The essence of the invention is that the lamp comprises a heat-removing base with a radiation output orifice, and light-emitting diodes secured about the periphery of the orifice, with, arranged in series at a distance from said light-emitting diodes, a radiation converter in the form of a concave layer of photoluminescent material, and a light reflector with a concave light-reflecting surface, wherein the concavities of the radiation converter and the light reflector are oriented towards the light-emitting diodes and the exit opening. When primary radiation from the light-emitting diodes falls on the surface of the converter, white light generated as a result of the mixing of the reflected primary radiation with secondary radiation from the photoluminescent material exits via the orifice in the heat-removing base. The surfaces of the converter and the reflector may be in the form of a truncated ellipsoid of revolution, in particular a sphere, or a paraboloid, with a main axis perpendicular to the plane of the orifice in the heat-removing base, or a cylinder which is truncated by the plane of the output orifice. In order to improve the dissipation of heat, thermal contact is provided between the convex surface of the converter and the concave inside surface of the reflector, the outside surface of which can be in the form of a ribbed heat radiator associated with the heat-removing base.
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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9252338B2 (en) * 2012-04-26 2016-02-02 Intematix Corporation Methods and apparatus for implementing color consistency in remote wavelength conversion
US20130335994A1 (en) * 2012-06-13 2013-12-19 Innotec Corp. Illuminated accessory unit
RU2536767C2 (en) * 2012-12-06 2014-12-27 Анатолий Васильевич Вишняков Method of obtaining modified trichromatic led sources of white light
US9052088B2 (en) * 2013-09-20 2015-06-09 Whelen Engineering Company, Inc. Tuned composite optical arrangement for LED array
CN103840068B (en) * 2013-12-31 2017-09-19 杨毅 Wavelength converter and light-emitting device
FR3020115B1 (en) * 2014-04-16 2019-04-19 Philippe Allart LUMINESCENT OBJECT WITH SYSTEM FOR AMPLIFYING THE PROJECTION OF LIGHT ON THIS OBJECT
EP3146260B1 (en) 2014-05-19 2023-03-29 Whelen Engineering Company, Inc. Warning light with tinted lens
US10422942B2 (en) 2014-06-05 2019-09-24 Signify Holding B.V. Luminescence concentrator
CN105398376B (en) * 2014-09-05 2019-10-22 福特全球技术公司 Luminescence generated by light storehouse lamp
KR101601531B1 (en) * 2014-11-07 2016-03-10 주식회사 지엘비젼 Lighting Device
US10139078B2 (en) 2015-02-19 2018-11-27 Whelen Engineering Company, Inc. Compact optical assembly for LED light sources
JP6588727B2 (en) * 2015-04-27 2019-10-09 シチズン電子株式会社 Light emitting device
US10208914B2 (en) 2015-09-09 2019-02-19 Whelen Engineering Company, Inc. Reflector with concentric interrupted reflecting surfaces
RU2630439C2 (en) * 2015-10-07 2017-09-07 Денис Геннадьевич Дроздов Led lamp
US10244599B1 (en) 2016-11-10 2019-03-26 Kichler Lighting Llc Warm dim circuit for use with LED lighting fixtures
CN107062014A (en) * 2017-05-10 2017-08-18 浙江英特来光电科技有限公司 A kind of LED filament bulb lamp with high lux maintenance
EP3625028B1 (en) * 2017-05-15 2022-07-06 Signify Holding B.V. 3d printing of a reflector using polymer filled with metal coated glass or mica particles and reflector obtainable thereby
US11204152B2 (en) 2019-08-15 2021-12-21 Microsoft Technology Licensing, Llc Illumination device having reflector with concave and convex symmetrical surfaces
CN113024251A (en) * 2019-12-09 2021-06-25 上海航空电器有限公司 Fluorescent ceramic with plano-concave structure film for high-color-rendering laser lighting and preparation method thereof
US11833261B2 (en) * 2020-12-28 2023-12-05 Leedarson Lighting Co., Ltd. Lighting apparatus

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845316A (en) * 1994-07-29 1996-02-16 Toshiba Lighting & Technol Corp Reflector and light source with reflector
US6600175B1 (en) 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
US6149283A (en) * 1998-12-09 2000-11-21 Rensselaer Polytechnic Institute (Rpi) LED lamp with reflector and multicolor adjuster
US6351069B1 (en) 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
JP4527230B2 (en) * 2000-02-28 2010-08-18 三菱電機照明株式会社 Surface-emitting LED light source
JP4096598B2 (en) * 2001-11-06 2008-06-04 株式会社日立製作所 Light source for projection apparatus and projection-type image display apparatus using the same
JP2003249103A (en) * 2002-02-22 2003-09-05 Ichikoh Ind Ltd Vehicle luminaire
JP2004047748A (en) 2002-07-12 2004-02-12 Stanley Electric Co Ltd Light-emitting diode
WO2004019422A1 (en) 2002-08-21 2004-03-04 Seoul Semiconductor Co., Ltd. White light emitting device
KR100622209B1 (en) * 2002-08-30 2006-09-19 젤코어 엘엘씨 Coated led with improved efficiency
US6841804B1 (en) * 2003-10-27 2005-01-11 Formosa Epitaxy Incorporation Device of white light-emitting diode
JP2006059625A (en) * 2004-08-19 2006-03-02 Matsushita Electric Ind Co Ltd Led illumination device, pendant illumination fixture, and street lgt
DE102005028456A1 (en) * 2005-06-17 2006-12-28 Schott Ag Metal reflector and method for its production
US20070114562A1 (en) * 2005-11-22 2007-05-24 Gelcore, Llc Red and yellow phosphor-converted LEDs for signal applications
JP4492472B2 (en) * 2005-07-26 2010-06-30 パナソニック電工株式会社 lighting equipment
US7293908B2 (en) * 2005-10-18 2007-11-13 Goldeneye, Inc. Side emitting illumination systems incorporating light emitting diodes
WO2007108616A1 (en) * 2006-03-17 2007-09-27 Seoul Semiconductor Co., Ltd. Side-view light emitting diode package having a reflector
EP2021688B1 (en) * 2006-05-05 2016-04-27 Cree, Inc. Lighting device
US20080029720A1 (en) * 2006-08-03 2008-02-07 Intematix Corporation LED lighting arrangement including light emitting phosphor
JP4726872B2 (en) * 2006-09-27 2011-07-20 シーシーエス株式会社 Reflective lighting device
JP4689579B2 (en) * 2006-10-25 2011-05-25 シャープ株式会社 Light emitting device
US8596841B2 (en) * 2006-12-19 2013-12-03 Koito Manufacturing Co., Ltd. Vehicle lamp
JP5030661B2 (en) * 2007-05-16 2012-09-19 シャープ株式会社 Lighting device
US8172415B2 (en) * 2007-05-24 2012-05-08 Koninklijke Philips Electronics N.V. Color-tunable illumination system
US7810956B2 (en) 2007-08-23 2010-10-12 Koninklijke Philips Electronics N.V. Light source including reflective wavelength-converting layer
US7618157B1 (en) 2008-06-25 2009-11-17 Osram Sylvania Inc. Tubular blue LED lamp with remote phosphor
CA2728158A1 (en) * 2008-06-26 2009-12-30 Osram Sylvania Inc. Led lamp with remote phosphor coating and method of making the lamp
JP2010176926A (en) * 2009-01-27 2010-08-12 Ichikoh Ind Ltd Vehicular lighting fixture
CN101881381B (en) * 2009-05-05 2012-09-05 宁波晶科光电有限公司 White light emitting diode and white light emitting diode lamp
JP2012526347A (en) * 2009-05-07 2012-10-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Lighting device with phosphor and dichroic filter
CN102460747B (en) * 2009-06-04 2015-04-15 皇家飞利浦电子股份有限公司 Efficient light emitting device and method for manufacturing such a device
RU93132U1 (en) * 2009-06-15 2010-04-20 Че-Каи ЧЕН LAMP
CN201513741U (en) * 2009-07-24 2010-06-23 华南师范大学 Reflection-type LED lighting lamp
EP2524165B1 (en) * 2010-01-15 2020-04-15 Express Imaging Systems, LLC Apparatus, method to change light source color temperature with reduced optical filtering losses
CN101806404A (en) * 2010-02-12 2010-08-18 李骋翔 High-efficiency flexible surface light source
CN201636605U (en) * 2010-03-11 2010-11-17 上海三思电子工程有限公司 Reflex LED lamp

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JP6045079B2 (en) 2016-12-14
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US9136444B2 (en) 2015-09-15
CN103348476A (en) 2013-10-09
EP2665099A1 (en) 2013-11-20
EP2665099A4 (en) 2017-11-22
KR20140053837A (en) 2014-05-08
US20130306998A1 (en) 2013-11-21
JP2014505982A (en) 2014-03-06
WO2013039418A1 (en) 2013-03-21

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