CA2760508A1 - Structure fbar-cmos monolithique telle que pour une detection de masse - Google Patents

Structure fbar-cmos monolithique telle que pour une detection de masse Download PDF

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Publication number
CA2760508A1
CA2760508A1 CA2760508A CA2760508A CA2760508A1 CA 2760508 A1 CA2760508 A1 CA 2760508A1 CA 2760508 A CA2760508 A CA 2760508A CA 2760508 A CA2760508 A CA 2760508A CA 2760508 A1 CA2760508 A1 CA 2760508A1
Authority
CA
Canada
Prior art keywords
resonator
specified
integrated circuit
oscillator
acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2760508A
Other languages
English (en)
Inventor
Matthew Johnston
Kenneth Shepard
Ioannis Kymissis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University in the City of New York
Original Assignee
Columbia University in the City of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University in the City of New York filed Critical Columbia University in the City of New York
Publication of CA2760508A1 publication Critical patent/CA2760508A1/fr
Abandoned legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22Details, e.g. general constructional or apparatus details
    • G01N29/24Probes
    • G01N29/2437Piezoelectric probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02Analysing fluids
    • G01N29/022Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02Analysing fluids
    • G01N29/036Analysing fluids by measuring frequency or resonance of acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0557Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the other elements being buried in the substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/02Indexing codes associated with the analysed material
    • G01N2291/025Change of phase or condition
    • G01N2291/0256Adsorption, desorption, surface mass change, e.g. on biosensors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/04Wave modes and trajectories
    • G01N2291/042Wave modes
    • G01N2291/0426Bulk waves, e.g. quartz crystal microbalance, torsional waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175Acoustic mirrors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
CA2760508A 2009-04-29 2010-04-29 Structure fbar-cmos monolithique telle que pour une detection de masse Abandoned CA2760508A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17386609P 2009-04-29 2009-04-29
US61/173,866 2009-04-29
US21561109P 2009-05-07 2009-05-07
US61/215,611 2009-05-07
PCT/US2010/032976 WO2010127122A1 (fr) 2009-04-29 2010-04-29 Structure fbar-cmos monolithique telle que pour une détection de masse

Publications (1)

Publication Number Publication Date
CA2760508A1 true CA2760508A1 (fr) 2010-11-04

Family

ID=43032556

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2760508A Abandoned CA2760508A1 (fr) 2009-04-29 2010-04-29 Structure fbar-cmos monolithique telle que pour une detection de masse

Country Status (4)

Country Link
EP (1) EP2425468A4 (fr)
CN (1) CN102414855B (fr)
CA (1) CA2760508A1 (fr)
WO (1) WO2010127122A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9255912B2 (en) 2009-04-29 2016-02-09 The Trustees Of Columbia University In The City Of New York Monolithic FBAR-CMOS structure such as for mass sensing
WO2014062936A1 (fr) 2012-10-17 2014-04-24 The Trustees Of Columbia University In The City Of New York Transistors à effet de champ à jonction à cmos intégré pour plates-formes bioélectroniques denses et à faible bruit
WO2014210307A1 (fr) 2013-06-26 2014-12-31 Edrees Hassan Résonateurs co-intégrés à ondes de volume
CN105866815B (zh) * 2016-05-06 2018-12-28 中国工程物理研究院电子工程研究所 一种柔性结构的fbar伽马辐照传感器
CN109642891A (zh) * 2016-08-11 2019-04-16 Qorvo美国公司 具有受控放置的功能化材料的声谐振器装置
GB2554400A (en) 2016-09-26 2018-04-04 Univ Warwick Bulk acoustic wave resonator based sensor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2271179A1 (fr) * 1999-05-05 2000-11-05 Sensorchem International Corporation Procede pour surveiller et detecter des interactions entre de petites molecules et des biomolecules
US6936837B2 (en) * 2001-05-11 2005-08-30 Ube Industries, Ltd. Film bulk acoustic resonator
JP3939939B2 (ja) * 2001-07-17 2007-07-04 富士通株式会社 圧電薄膜共振素子の製造方法
JP3949990B2 (ja) * 2002-03-29 2007-07-25 株式会社東芝 電圧制御発振器
US6767749B2 (en) * 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
WO2004017063A2 (fr) * 2002-07-19 2004-02-26 Siemens Aktiengesellschaft Dispositif et procede pour detecter une substance
JP4891772B2 (ja) * 2003-10-08 2012-03-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ バルク超音波センサ
DE602004000851T2 (de) * 2003-10-30 2007-05-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Akustisch gekoppelter Dünnschicht-Transformator mit zwei piezoelektrischen Elementen, welche entgegengesetzte C-Axen Orientierung besitzten
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
US7248131B2 (en) * 2005-03-14 2007-07-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Monolithic vertical integration of an acoustic resonator and electronic circuitry
US7138889B2 (en) * 2005-03-22 2006-11-21 Triquint Semiconductor, Inc. Single-port multi-resonator acoustic resonator device
EP1959568A1 (fr) * 2007-02-19 2008-08-20 Consejo Superior de Investigaciones Cientificas Résonateur à ondes acoustiques de volume à couche mince et procédé pour effectuer une intégration hétérogène correspondante avec circuit intégré de semi-conducteur d'oxyde métallique complémentaire
CN101246162A (zh) * 2008-03-12 2008-08-20 浙江大学 利用压电薄膜体声波器件的抗体检测生物芯片

Also Published As

Publication number Publication date
EP2425468A4 (fr) 2014-05-21
CN102414855A (zh) 2012-04-11
EP2425468A1 (fr) 2012-03-07
CN102414855B (zh) 2015-02-11
WO2010127122A1 (fr) 2010-11-04

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued

Effective date: 20150429