CA2465341A1 - Folded memory layers - Google Patents
Folded memory layers Download PDFInfo
- Publication number
- CA2465341A1 CA2465341A1 CA002465341A CA2465341A CA2465341A1 CA 2465341 A1 CA2465341 A1 CA 2465341A1 CA 002465341 A CA002465341 A CA 002465341A CA 2465341 A CA2465341 A CA 2465341A CA 2465341 A1 CA2465341 A1 CA 2465341A1
- Authority
- CA
- Canada
- Prior art keywords
- memory
- ribbon
- stack
- structures
- crossing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 abstract 3
- 238000003491 array Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Credit Cards Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Insulated Conductors (AREA)
- Ropes Or Cables (AREA)
- Forging (AREA)
- Magnetic Heads (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
Abstract
In a ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers (2;4) with stripe-like electrodes forming word lines (2a) and bit lines (4a) of a matrix-addressable memory array (M), memory cells are defined in volumes of memory material in between two crossing word lines (2a) and bit lines (4a) and a plurality of memory arrays (M) are provided in a stacked arrangement. A
stack (S) of memory arrays (M) is formed by two or more ribbon-like structures (R), which are folded and/or braided into each other. Each ribbon-like structure (R) comprises a flexible substrate (3) of non-conducting material and at least one electrode layer (2,4) respectively provided on a surface of the substrate and comprising the parallel strip-like electrodes extending (2a,4a) along the ribbon-like structure (R). A layer of memory material (1) covers one of the electrode layers (2,4), whereby each memory array (M) of the stack (S) is formed by overlapping portions of a pair of adjacent ribbon-like structures (R
k, R k+1) crossing in substantially orthogonal relationship.
stack (S) of memory arrays (M) is formed by two or more ribbon-like structures (R), which are folded and/or braided into each other. Each ribbon-like structure (R) comprises a flexible substrate (3) of non-conducting material and at least one electrode layer (2,4) respectively provided on a surface of the substrate and comprising the parallel strip-like electrodes extending (2a,4a) along the ribbon-like structure (R). A layer of memory material (1) covers one of the electrode layers (2,4), whereby each memory array (M) of the stack (S) is formed by overlapping portions of a pair of adjacent ribbon-like structures (R
k, R k+1) crossing in substantially orthogonal relationship.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20015871A NO20015871D0 (en) | 2001-11-30 | 2001-11-30 | Memory device with braided layers |
NO20015871 | 2001-11-30 | ||
PCT/NO2002/000458 WO2003046924A1 (en) | 2001-11-30 | 2002-11-29 | Folded memory layers |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2465341A1 true CA2465341A1 (en) | 2003-06-05 |
CA2465341C CA2465341C (en) | 2006-05-16 |
Family
ID=19913088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002465341A Expired - Fee Related CA2465341C (en) | 2001-11-30 | 2002-11-29 | Folded memory layers |
Country Status (13)
Country | Link |
---|---|
EP (1) | EP1456850B1 (en) |
JP (1) | JP2005510866A (en) |
KR (1) | KR100603678B1 (en) |
CN (1) | CN1596448A (en) |
AT (1) | ATE309608T1 (en) |
AU (1) | AU2002348540B2 (en) |
CA (1) | CA2465341C (en) |
DE (1) | DE60207298T2 (en) |
DK (1) | DK1456850T3 (en) |
ES (1) | ES2250724T3 (en) |
NO (1) | NO20015871D0 (en) |
RU (1) | RU2274913C2 (en) |
WO (1) | WO2003046924A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6762950B2 (en) | 2001-11-30 | 2004-07-13 | Thin Film Electronics Asa | Folded memory layers |
US7808024B2 (en) | 2004-09-27 | 2010-10-05 | Intel Corporation | Ferroelectric polymer memory module |
JP4729989B2 (en) * | 2005-06-03 | 2011-07-20 | ソニー株式会社 | ANTENNA DEVICE, WIRELESS COMMUNICATION DEVICE, ITS CONTROL METHOD, COMPUTER-PROCESSED PROGRAM, AND RECORDING MEDIUM THEREOF |
US7952525B2 (en) | 2005-06-03 | 2011-05-31 | Sony Corporation | Antenna device associated wireless communication apparatus and associated control methodology for multi-input and multi-output communication systems |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969380A (en) * | 1996-06-07 | 1999-10-19 | Micron Technology, Inc. | Three dimensional ferroelectric memory |
NO309500B1 (en) * | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelectric data processing apparatus, methods for its preparation and readout, and use thereof |
NO308149B1 (en) * | 1998-06-02 | 2000-07-31 | Thin Film Electronics Asa | Scalable, integrated data processing device |
-
2001
- 2001-11-30 NO NO20015871A patent/NO20015871D0/en unknown
-
2002
- 2002-11-29 DK DK02782024T patent/DK1456850T3/en active
- 2002-11-29 AT AT02782024T patent/ATE309608T1/en not_active IP Right Cessation
- 2002-11-29 KR KR1020047008084A patent/KR100603678B1/en not_active IP Right Cessation
- 2002-11-29 CN CNA028238435A patent/CN1596448A/en active Pending
- 2002-11-29 CA CA002465341A patent/CA2465341C/en not_active Expired - Fee Related
- 2002-11-29 JP JP2003548255A patent/JP2005510866A/en not_active Abandoned
- 2002-11-29 DE DE60207298T patent/DE60207298T2/en not_active Expired - Fee Related
- 2002-11-29 ES ES02782024T patent/ES2250724T3/en not_active Expired - Lifetime
- 2002-11-29 RU RU2004119039/09A patent/RU2274913C2/en not_active IP Right Cessation
- 2002-11-29 EP EP02782024A patent/EP1456850B1/en not_active Expired - Lifetime
- 2002-11-29 WO PCT/NO2002/000458 patent/WO2003046924A1/en active IP Right Grant
- 2002-11-29 AU AU2002348540A patent/AU2002348540B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60207298D1 (en) | 2005-12-15 |
NO20015871D0 (en) | 2001-11-30 |
JP2005510866A (en) | 2005-04-21 |
DK1456850T3 (en) | 2006-03-20 |
EP1456850A1 (en) | 2004-09-15 |
DE60207298T2 (en) | 2006-07-20 |
ATE309608T1 (en) | 2005-11-15 |
CA2465341C (en) | 2006-05-16 |
WO2003046924A1 (en) | 2003-06-05 |
AU2002348540B2 (en) | 2007-02-15 |
ES2250724T3 (en) | 2006-04-16 |
RU2274913C2 (en) | 2006-04-20 |
KR20040068557A (en) | 2004-07-31 |
EP1456850B1 (en) | 2005-11-09 |
CN1596448A (en) | 2005-03-16 |
RU2004119039A (en) | 2006-01-10 |
KR100603678B1 (en) | 2006-07-20 |
AU2002348540A1 (en) | 2003-06-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101713228B1 (en) | Semiconductor memory devices having asymmetric wordline pads | |
KR100524427B1 (en) | Multidimensional addressing architecture for electronic devices | |
JP2003197867A5 (en) | ||
EP1308961A3 (en) | Memory cell structure | |
WO2006059313A3 (en) | Non-volatile memory | |
CA2357049A1 (en) | Polymer microactuator array with macroscopic force and displacement | |
JP2010074169A (en) | Nonvolatile memory device and method for manufacturing the same | |
KR20180114566A (en) | Three dimensional semiconductor memory device and method for manufacturing the same | |
KR20160108052A (en) | The semiconductor device | |
WO2003023858A1 (en) | Ferroelectric memory device and its manufacturing method | |
KR100303682B1 (en) | Semiconductor device | |
JP2006512776A5 (en) | ||
CA2186197A1 (en) | Packing for a Counterflow High Pressure Column | |
CA2465341A1 (en) | Folded memory layers | |
KR101799069B1 (en) | Semiconductor memory devices having asymmetric wordline pads | |
JP2000133784A (en) | Ferroelectric memory device | |
US6925015B2 (en) | Stacked memory device having shared bitlines and method of making the same | |
US6762950B2 (en) | Folded memory layers | |
KR20040111435A (en) | A volumetric data storage apparatus comprising a plurality of stacked matrix-addressable memory devices | |
CN115172364B (en) | Semiconductor structure and memory | |
NO20025771L (en) | Memory device with braided layers | |
TWI538167B (en) | Three-dimensional semiconductor device | |
JP2004336065A5 (en) | ||
JPS6454755A (en) | Memory |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |