CA2465341A1 - Folded memory layers - Google Patents

Folded memory layers Download PDF

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Publication number
CA2465341A1
CA2465341A1 CA002465341A CA2465341A CA2465341A1 CA 2465341 A1 CA2465341 A1 CA 2465341A1 CA 002465341 A CA002465341 A CA 002465341A CA 2465341 A CA2465341 A CA 2465341A CA 2465341 A1 CA2465341 A1 CA 2465341A1
Authority
CA
Canada
Prior art keywords
memory
ribbon
stack
structures
crossing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002465341A
Other languages
French (fr)
Other versions
CA2465341C (en
Inventor
Hans Gude Gudesen
Per-Erik Nordal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensurge Micropower ASA
Original Assignee
Thin Film Electronics Asa
Hans Gude Gudesen
Per-Erik Nordal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa, Hans Gude Gudesen, Per-Erik Nordal filed Critical Thin Film Electronics Asa
Publication of CA2465341A1 publication Critical patent/CA2465341A1/en
Application granted granted Critical
Publication of CA2465341C publication Critical patent/CA2465341C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • H10B99/10Memory cells having a cross-point geometry

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Credit Cards Or The Like (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Insulated Conductors (AREA)
  • Ropes Or Cables (AREA)
  • Forging (AREA)
  • Magnetic Heads (AREA)
  • Supporting Of Heads In Record-Carrier Devices (AREA)

Abstract

In a ferroelectric or electret volumetric memory device with a memory material provided in sandwich between first and second electrode layers (2;4) with stripe-like electrodes forming word lines (2a) and bit lines (4a) of a matrix-addressable memory array (M), memory cells are defined in volumes of memory material in between two crossing word lines (2a) and bit lines (4a) and a plurality of memory arrays (M) are provided in a stacked arrangement. A
stack (S) of memory arrays (M) is formed by two or more ribbon-like structures (R), which are folded and/or braided into each other. Each ribbon-like structure (R) comprises a flexible substrate (3) of non-conducting material and at least one electrode layer (2,4) respectively provided on a surface of the substrate and comprising the parallel strip-like electrodes extending (2a,4a) along the ribbon-like structure (R). A layer of memory material (1) covers one of the electrode layers (2,4), whereby each memory array (M) of the stack (S) is formed by overlapping portions of a pair of adjacent ribbon-like structures (R
k, R k+1) crossing in substantially orthogonal relationship.
CA002465341A 2001-11-30 2002-11-29 Folded memory layers Expired - Fee Related CA2465341C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20015871A NO20015871D0 (en) 2001-11-30 2001-11-30 Memory device with braided layers
NO20015871 2001-11-30
PCT/NO2002/000458 WO2003046924A1 (en) 2001-11-30 2002-11-29 Folded memory layers

Publications (2)

Publication Number Publication Date
CA2465341A1 true CA2465341A1 (en) 2003-06-05
CA2465341C CA2465341C (en) 2006-05-16

Family

ID=19913088

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002465341A Expired - Fee Related CA2465341C (en) 2001-11-30 2002-11-29 Folded memory layers

Country Status (13)

Country Link
EP (1) EP1456850B1 (en)
JP (1) JP2005510866A (en)
KR (1) KR100603678B1 (en)
CN (1) CN1596448A (en)
AT (1) ATE309608T1 (en)
AU (1) AU2002348540B2 (en)
CA (1) CA2465341C (en)
DE (1) DE60207298T2 (en)
DK (1) DK1456850T3 (en)
ES (1) ES2250724T3 (en)
NO (1) NO20015871D0 (en)
RU (1) RU2274913C2 (en)
WO (1) WO2003046924A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762950B2 (en) 2001-11-30 2004-07-13 Thin Film Electronics Asa Folded memory layers
US7808024B2 (en) 2004-09-27 2010-10-05 Intel Corporation Ferroelectric polymer memory module
JP4729989B2 (en) * 2005-06-03 2011-07-20 ソニー株式会社 ANTENNA DEVICE, WIRELESS COMMUNICATION DEVICE, ITS CONTROL METHOD, COMPUTER-PROCESSED PROGRAM, AND RECORDING MEDIUM THEREOF
US7952525B2 (en) 2005-06-03 2011-05-31 Sony Corporation Antenna device associated wireless communication apparatus and associated control methodology for multi-input and multi-output communication systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969380A (en) * 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
NO309500B1 (en) * 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelectric data processing apparatus, methods for its preparation and readout, and use thereof
NO308149B1 (en) * 1998-06-02 2000-07-31 Thin Film Electronics Asa Scalable, integrated data processing device

Also Published As

Publication number Publication date
DE60207298D1 (en) 2005-12-15
NO20015871D0 (en) 2001-11-30
JP2005510866A (en) 2005-04-21
DK1456850T3 (en) 2006-03-20
EP1456850A1 (en) 2004-09-15
DE60207298T2 (en) 2006-07-20
ATE309608T1 (en) 2005-11-15
CA2465341C (en) 2006-05-16
WO2003046924A1 (en) 2003-06-05
AU2002348540B2 (en) 2007-02-15
ES2250724T3 (en) 2006-04-16
RU2274913C2 (en) 2006-04-20
KR20040068557A (en) 2004-07-31
EP1456850B1 (en) 2005-11-09
CN1596448A (en) 2005-03-16
RU2004119039A (en) 2006-01-10
KR100603678B1 (en) 2006-07-20
AU2002348540A1 (en) 2003-06-10

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