CA2462178A1 - Transmitter photonic integrated circuit (txpic) chips - Google Patents

Transmitter photonic integrated circuit (txpic) chips Download PDF

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Publication number
CA2462178A1
CA2462178A1 CA002462178A CA2462178A CA2462178A1 CA 2462178 A1 CA2462178 A1 CA 2462178A1 CA 002462178 A CA002462178 A CA 002462178A CA 2462178 A CA2462178 A CA 2462178A CA 2462178 A1 CA2462178 A1 CA 2462178A1
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Canada
Prior art keywords
chip
pic
integrated circuit
photonic integrated
modulated
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Granted
Application number
CA002462178A
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French (fr)
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CA2462178C (en
Inventor
David F. Welch
Vincent G. Dominic
Fred A. Kish, Jr.
Mark J. Missey
Radhakrishnan L. Nagarajan
Atul Mathur
Frank H. Peters
Robert B. Taylor
Matthew L. Mitchell
Alan C. Nilsson
Stephen G. Grubb
Richard P. Schneider
Charles H. Joyner
Vinh D. Nguyen
Donald J. Pavinski, Jr.
Jonas Webjorn
Ting-Kuang Chiang
Robert Grencavich
Marco E. Sosa
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Infinera Corp
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Individual
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Priority claimed from PCT/US2002/032109 external-priority patent/WO2003032021A2/en
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Publication of CA2462178A1 publication Critical patent/CA2462178A1/en
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Publication of CA2462178C publication Critical patent/CA2462178C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12019—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12033—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for configuring the device, e.g. moveable element for wavelength tuning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/217—Multimode interference type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/295—Analog deflection from or in an optical waveguide structure]
    • G02F1/2955—Analog deflection from or in an optical waveguide structure] by controlled diffraction or phased-array beam steering
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/102—In×P and alloy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/58—Multi-wavelength, e.g. operation of the device at a plurality of wavelengths
    • G02F2203/585—Add/drop devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/70—Semiconductor optical amplifier [SOA] used in a device covered by G02F
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J14/00—Optical multiplex systems
    • H04J14/02—Wavelength-division multiplex systems

Abstract

A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Claims (110)

1. A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the channel signal outputs from the modulated sources and provide a multiplexed output signal on an output waveguide from the chip, the modulated sources, combiner and output waveguide all integrated on the chip.
2. The photonic integrated circuit (PIC) chip of claim 1 further comprising at least one array of semiconductor optical amplifiers (SOAs) integrated on the chip optically coupled between the array of modulated sources and the combiner to amplify the modulated signal outputs.
3. The photonic integrated circuit (PIC) chip of claim 2 wherein said semiconductor optical amplifiers (SOAs) include a local heater element.
4. The photonic integrated circuit (PIC) chip of claim 1 wherein at least either of said modulated sources or said wavelength selective combiner including a local wavelength tuning element.
5. The photonic integrated circuit (PIC) chip of claim 4 wherein said local wavelength tuning element for each of said modulated sources comprises a heater, a phase tuning section, micro-thermo-electric cooler or stress tuning with bi-metals.
6. The photonic integrated circuit (PIC) chip of claim 4 wherein said local wavelength tuning element for said wavelength selective combiner comprises a heater, thermo-electric cooler or stress tuning with bi-metals.
7. The photonic integrated circuit (PIC) chip of claim 1 further comprising at least one array of photodiodes integrated on the chip optically coupled between the array of modulated sources and the combiner to monitor the signal output from the modulated sources.
8. The photonic integrated circuit (PIC) chip of claim 7 wherein said signal output monitoring includes monitoring the output power, extinction ratio and chirp of the modulated sources.
9. The photonic integrated circuit (PIC) chip of claim 1 further comprising at least one photodiode integrated on the chip optically coupled at the end of the array of modulated sources opposite to the combiner to monitor signal output emanating from the rear end of at least one of the modulated sources.
10. The photonic integrated circuit (PIC) chip of claim 9 wherein said at least one photodiode is later cleaved from the chip.
11. The photonic integrated circuit (PIC) chip of claim 10 wherein said at least one photodiode is a PIN photodiode or an avalanche photodiode.
12. The photonic integrated circuit (PIC) chip of claim 9 wherein said at least one photodiode is an array of photodiodes, one for each modulated source to monitor its signal output emanating from the rear end of its corresponding modulated source.
13. The photonic integrated circuit (PIC) chip of claim 12 wherein said photodiode array is later cleaved from the chip.
14. The photonic integrated circuit (PIC) chip of claim 13 wherein said photodiode array comprises PIN photodiodes or an avalanche photodiodes.
15. The photonic integrated circuit (PIC) chip of claim 1 wherein said modulated sources are an array of directly modulated laser sources.
16. The photonic integrated circuit (PIC) chip of claim 15 wherein said directly modulated sources are DFB lasers or DBR lasers.
17. The photonic integrated circuit (PIC) chip of claim 1 wherein said modulated sources are an array of laser sources optically coupled to an array of electro-optic modulators.
18. The photonic integrated circuit (PIC) chip of claim 17 wherein said laser sources are DFB lasers or DBR lasers.
19. The photonic integrated circuit (PIC) chip of claim 18 wherein said electro-optic modulators are electro-absorption modulators (EAMs) of Mach-Zehnder modulators (MZMs).
20. The photonic integrated circuit (PIC) chip of claim 18 wherein said wavelength selective combiner is an arrayed waveguide grating (AWG) or an Echelle grating.
21. The photonic integrated circuit (PIC) chip of claim 18 further comprising at least one array of semiconductor optical amplifiers (SOAs) integrated on the chip optically coupled.

between the array of electro-optic modulators and the combiner to amplify the modulated signal outputs.
22. The photonic integrated circuit (PIC) chip of claim 18 further comprising at least one array of photodiodes integrated on the chip optically coupled between the array of electro-optic modulators and the combiner to monitor the signal output from the modulators.
23. The photonic integrated circuit (PIC) chip of claim 18 further comprising at least one array of semiconductor optical amplifiers (SOAs) integrated on the chip optically coupled between the array of laser sources and the array of electro-optic modulators to amplify the laser source outputs.
24. The photonic integrated circuit (PIC) chip of claim 18 further comprising at least one array of photodiodes integrated on the chip optically coupled between the array of laser sources and the array of electro-optic modulators to monitor the output from the laser sources.
25. The photonic integrated circuit (PIC) chip of claim 1 wherein said output waveguide includes a spot size converter (SSC).
26. The photonic integrated circuit (PIC) chip of claim 1 further comprising at least one photodetector integrated on the chip and coupled to an output of the wavelength selective combiner to tap off the chip a small amount of the combined output signal for signal channel identification, wavelocking, channel equalization, pre-emphasis or functioning as another modulator for providing encoded data.
27. The photonic integrated circuit (PIC) chip of claim 1 wherein said modulated sources and said wavelength selective combiner are optically coupled via common communal optical waveguides, said modulated sources each include an active region in addition to one of said common communal optical waveguides.
28. The photonic integrated circuit (PIC) chip of claim 27 wherein said active region is a multiple quantum well.
29. The photonic integrated circuit (PIC) chip of claim 27 wherein said active region comprises one or more quantum well layers of InGaAsP or In AlGaAs.
30. The photonic integrated circuit (PIC) chip of claim 1 wherein the chip is fabricated employing alloys of InGaAsP or InAlGaAs/InP employing metalorganic vapor deposition employing selective area growth (SAG) in the growth of the chip.
31. The photonic integrated circuit (PIC) chip of claim 1 further comprising at least one photodiode coupled to the input of said wavelength selective combiner, a second waveguide formed on the chip from an output thereof to an output of said wavelength selective combiner, said at least one photodiode receiving an optical data signal via said second waveguide.
32. The photonic integrated circuit (PIC) chip of claim 31 comprising an array of photodiodes integrated on the chip and having their inputs coupled by waveguides to the input of said wavelength selective combiner, and photodiodes respectively receiving a demultiplexed channel signal via said combiner, said combiner functioning as a demultiplexer for a multiplexed input signal received on said second waveguide.
33. The photonic integrated circuit (PIC) chip of claim 32 wherein the array of photodiodes are formed adjacent of juxtaposed relative to said modulated sources.
34. The photonic integrated circuit (PIC) chip of claim 32 wherein the array of photodiodes are formed interleaved with said modulated sources.
35. The photonic integrated circuit (PIC) chip of claim 32 further comprising a semiconductor optical amplifier integrated between each of said photodiodes in their respective waveguides to said combiner input.
36. The photonic integrated circuit (PIC) chip of claim 32 further comprising a semiconductor optical amplifier integrated into said second waveguide to amplify the multiplexed input signal.
37. The photonic integrated circuit (PIC) chip of claim 32 further comprising a integrated laser amplifier formed in said second waveguide to amplify the multiplexed input signal.
38. The photonic integrated circuit (PIC) chip of claim 37 wherein said laser amplifier is a gain clamped-semiconductor optical amplifier (GC-SOA).
39. The photonic integrated circuit (PIC) chip of claim 1 wherein the output of the wavelength selective combiner includes a vernier output comprising two or more outputs for the multiplexed output signal on separate output waveguides on said chip, the vernier output having the best match of its wavelength grid passband with the combined wavelength grid of the channel signal outputs.
40. The photonic integrated circuit (PIC) chip of claim 1 further comprising a plurality of redundant modulated sources integrated on the chip in addition to said modulated sources, said redundant modulated sources optically coupled to an input of said wavelength selective combiner and to replace any failed modulated source.
41. The photonic integrated circuit (PIC) chip of claim 40 wherein said redundant modulated sources are formed adjacent to said modulated sources or interleaved with said modulated sources.
42. The photonic integrated circuit (PIC) chip of claim 40 wherein said redundant modulated sources are formed interleaved with said modulated sources.
43. The photonic integrated circuit (PIC) chip of claim 40 wherein said redundant modulated sources are directly modulated laser sources or any array of laser sources optically coupled to an array of electro-optic modulators.
44. The photonic integrated circuit (PIC) chip of claim 43 wherein said laser sources are DFB lasers or DBR lasers.
45. The photonic integrated circuit (PIC) chip of claim 43 wherein said electro-optic modulators are electro-absorption modulators (EAMs) or Mach-Zehnder modulators (MZMs).
46. The photonic integrated circuit (PIC) chip of claim 1 wherein said array of modulated sources comprises at least two laser sources for each channel wavelength said channel wavelength laser sources optically combined together on a single waveguide coupled to an input of said wavelength selective combiner.
47. The photonic integrated circuit (PIC) chip of claim 46 wherein on of said channel wavelength laser sources for each channel wavelength are operated at a time.
48. The photonic integrated circuit (PIC) chip of claim 47 wherein said channel wavelength laser sources are DFB lasers or DBR lasers.
49. The photonic integrated circuit (PIC) chip of claim 47 wherein the other or said channel wavelength laser sources for each channel wavelength are redundant laser sources to replace should the one of said channel wavelength laser source become inoperative.
50. The photonic integrated circuit (PIC) chip of claim 46 wherein said channel wavelength laser sources for each channel wavelength can be directly modulated.
51. The photonic integrated circuit (PIC) chip of claim 50 wherein said channel wavelength laser sources are DBF lasers or DBR lasers.
52. The photonic integrated circuit (PIC) chip of claim 46 wherein said channel wavelength laser sources for each channel wavelength are optically coupled to an electro-optical modulator, the output of each modulator optically couple to said wavelength selective combiner.
53. The photonic integrated circuit (PIC) chip of claim 52 are wherein said channel wavelength laser sources are DFB lasers or DBR lasers.
54. The photonic integrated circuit (PIC) chip of claim 46 wherein said channel wavelength laser sources are DFB lasers or DBR lasers.
55. A monolithic transmitter photonic integrated circuit (T×PIC) chip comprising an array of modulated sources integrated on said chip, each operating at a different wavelength and providing a respective light output;
all of said channel signals representative of a wavelength on a standardized wavelength grid;
an wavelength selective optical multiplexer formed on the PIC chip, said wavelength selective multiplexer having reduced insertion loss compared to multiplexers that are not wavelength selective;
the signal outputs of the modulated laser sources optically coupled to a plurality of inputs of the optical multiplexer and provided as a multiplexed output from the optical multiplexer.
56. The T×PIC of claim 55 wherein the wavelength selective multiplexer is an arrayed waveguide grating (AWG) or an Echelle grating.
57. The T×PIC of claim 55 wherein said modulated sources comprise a directly modulated laser, or a laser with an integrated electro-optic modulator.
58. The T×PIC of claim 57 wherein said laser comprise DFBs or DBR lasers and said electro-optic modulators comprise electro-absorption modulators or Mach-Zehnder modulators.
59. A monolithic transmitter photonic integrated circuit (T×PIC) chip comprising an array of DFB laser sources, each formed in an optical waveguide of an array of optical waveguides formed on said chip and operating at a different wavelength and providing a respective light output;

each of said DFB laser sources directly modulated to provide a modulated output comprising a channel signal all of said channel signals representative of a wavelength on a predetermined wavelength grid;
an arrayed waveguide grating integrated on said chip, said arrayed waveguide grating coupled to each of said optical waveguides of said waveguide array to receive said modulated channel signal from each said DFB laser sources and combine them to provide a multiplexed channel signal output on an output waveguide from the chip.
60. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 59 further comprising an optical amplifier optically coupled to receive the combined light output from said arrayed waveguide grating to amplify the multiplexed channel signal output.
61. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 59 wherein said optical amplifier is an optical semiconductor amplifier integrated in said chip in said chip output waveguide.
62. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 59 wherein said optical amplifier is an optical fiber amplifier external of said chip and optically coupled to said chip output waveguide to receive the multiplexed channel signal output.
63. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 62 wherein said optical fiber amplifier is an erbium doped fiber amplifier.
64. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 59 further comprising a plurality of photodiodes integrated on said chip, said photodiodes one each formed in said optical waveguides of waveguide array either between each of the outputs from said directly modulated lasers and the input to said arrayed waveguide grating or adjacent to the back end of said of a corresponding DFB laser source, or both.
65. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 64 wherein said photodiodes are PIN photodiodes or avalanche photodiodes (APDs).
66. A monolithic PIC semiconductor chip comprising an array of DFB lasers each providing output at a designated wavelength approximating a wavelength transmission grid, each of the outputs optically coupled to a respective EA modulator, modulated signal outputs of the EA modulators coupled to an input of an arrayed waveguide grating (AWG) which provides an output comprising a multiplexed, modulated signal output of said EA modulator modulated signal outputs.
67. The monolithic PIC semiconductor chip of claim 66 wherein said DFB lasers, EA
modulators and the AWG include an active region and a waveguide layer comprised of InGaAsP or InAlGaAs.
68. A photonic integrated circuit (PIC) comprising a plurality of monolithically integrated optical components on a single chip comprising:
an array of spatially disposed laser sources operating at different respective wavelengths within an optical telecommunication communication bandwidth and providing of light outputs;
an array of spatially disposed electro-optical modulators each respectively optically coupled to the light output of a laser source to provide a modulated signal output;
an array of semiconductor optical amplifiers (SOAs) each respectively optically coupled to a modulated signal output to amplify the light signal output of an electro-optical modulator; and an optical combiner optically coupled to receive outputs of said semiconductor optical amplifiers (SOAs) and combined them into to a single output for transfer from said chip.
69. The photonic integrated circuit (PIC) of claim 68 wherein the semiconductor optical amplifiers (SOAs) create noise, said optical combiner having narrow channel filtering to remove the noise created by the semiconductor optical amplifiers (SOAs).
70. The photonic integrated circuit (PIC) of claim 68 wherein the optical combiner is a wavelength selective combiner.
71. The photonic integrated circuit (PIC) of claim 70 wherein the wavelength selective combiner comprises an array waveguide grating (AWG) or an Echelle grating.
72. The photonic integrated circuit (PIC) of claim 68 wherein the noise is amplified spontaneous emission (ASE).
73. The photonic integrated circuit (PIC) of claim 68 wherein the electro-optical modulators comprise an array of electro-absorption modulators or Mach-Zehnder modulators.
74. The photonic integrated circuit (PIC) of claim 68 wherein said laser sources comprise distributed feedback (DFB) lasers or distributed Bragg reflector (DBR) lasers.
75. An optical transport network comprising:

at least one transmitter module;
a plurality of monolithic transmitter photonic integrated circuit (T×PIC) chips in the transmitter module, each of the monolithic transmitter photonic integrated circuit (T×PIC) chips including an array of modulated sources, each to provide a channel signal of wavelength different from other wavelengths of other modulated sources, the channel separation between adjacent modulated sources in each chip being of a first predetermined amount, the outputs from at least some of the modulated sources optically coupled to an integrated optical multiplexer where the channel signals are combined into a band channel output;
a band multiplexer optically coupled to receive the band channel output from each of the T×PIC chips and combine the same into a final multiplexed signal for launching on an optical span, the wavelength channel separation of signals in the final multiplexed signal being of a second predetermined amount where the second predetermined amount is less than the first predetermined amount;
at least one receiver module;

a band demultiplexer optically coupled to receive the final multiplexed signal and separate the final multiplexed signal into a plurality of said band channel outputs; and a plurality of monolithic receiver photonic integrated circuit (R×PIC) chips in the receiver module for receiving a band channel output, each of the monolithic receiver photonic integrated circuit R×PIC) chips including an integrated optical demultiplexer to demultiplex the band channel output into a plurality of channel signals; and a plurality of photodetectors optically coupled to an output of the optical demultiplexer to each receive a respective channel signal for detection.
76. The optical transport network of claim 75 said first predetermined wavelength amount is equal to or in excess of 200 GHz.
77. The optical transport network of claim 75 said second predetermined wavelength amount is 25 GHz or 50 GHz.
78. The optical transport network of claim 75 wherein said transmitter photonic integrated circuit chips and receive photonic integrated circuit chips are made from Group III-V
compound semiconductors comprising the InGaAs/InP regime or the AlInGaAs/InP
regime.
79.~The optical transport network of claim 75 wherein said transmitter modules and receiver modules are smaller than conventional transmitter modules and receiver modules utilizing discrete active and passive optical components.
80. ~An optical transmitter module comprising a monolithic photonic integrated circuit in an InP-based chip having a plurality of discrete channel signals comprising an integrated array of tunable modulated, sources providing a plurality of modulated outputs of different channel wavelengths and coupled to an optical multiplexer to form a multiplexed signal channel output for transfer off of the chip and feedback system coupled to the chip to tune the modulated sources to approximate a standardized wavelength grid.
81.~The optical transmitter module of claim 80 wherein the turnable modulated sources comprise a direct modulated DFB or DBR lasers or tunable DBR or DBR lasers, or an array of DFR or DBR lasers or tunable DBR or DBR lasers an array of electro-absorption modulators or Mach-Zehnder modulators, said optical combiner or multiplexer comprises an arrayed waveguide grating (AWG).
82.~A monolithic transmitter photonic integrated circuit (T×PIC) chip comprising an array of DFB laser sources integrated on said chip, each operating at a different wavelength and providing a respective light output;~~
an array of electro-absorption, modulators integrated on said chip, one each to receive the respective light output of a DFB laser source to provide a modulated output comprising a channel signal, all of said channel signals representative of a wavelength on a predetermined wavelength grid; and an arrayed waveguide grating integrated on said chip, coupled to receive said channel signal from said modulators and combine them to provide for a multiplexed channel signal on an optical waveguide output from the chip.
83. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to monitor the channel signal output from said modulators.
84. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising a plurality of photodiodes integrated on said chip, one each for said DFB laser sources and adjacent to the back end of said of a corresponding DFB laser source to monitor the light intensity or wavelength thereof.
85. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said DFB laser source and its corresponding electro-absorption modulator to monitor the light intensity or wavelength thereof.
86. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising a first set of photodiodes integrated on said chip, one each for said DFB laser sources and adjacent to the back end of said of a corresponding DFB laser source to monitor the light intensity or wavelength thereof, and a second set of photodiodes integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to monitor the channel signal from said modulators.
87. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 86 further comprising an optical amplifier outside of the chip, optical coupled to receive said multiplexed channel signal output from the chip and to amplify the multiplexed channel signal prior to launching the same onto an optical transport network.
88. The monolithic transmitter photonic integrated circuit (T×PIC) chip apparatus of claim 87 wherein said optical amplifier is an optical fiber amplifier.
89. The monolithic transmitter photonic integrated circuit (T×PIC) apparatus of claim 87 wherein said optical fiber amplifier is an erbium doped fiber amplifier.
90. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising a plurality of semiconductor optical amplifiers integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said arrayed waveguide grating to amplify the channel signal output from said modulators.
91. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 90 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said semiconductor optical amplifiers and said arrayed waveguide grating to monitor the light intensity from a corresponding semiconductor optical amplifier.
92. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 90 further comprising a first set of photodiodes integrated on said chip, one each for said DFB laser sources and adjacent to the back end of said of a corresponding DFB laser source to monitor the light intensity or wavelength thereof, and a second set of photodiodes integrated on said chip, one each in an optical waveguide between each of said electro-absorption modulators and said semiconductor optical amplifiers to monitor the channel signal output from said modulators.
93. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 90 further comprising a plurality of photodiodes integrated on said chip, one each in an optical waveguide between each of said DFB laser source and its corresponding electro-absorption modulator to monitor the light intensity or wavelength thereof.
94. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 90 further comprising at least one integrated photodiode on said chip at the output of said arrayed waveguide grating to monitor the intensity or wavelengths of the multiplexed channel signal output.
95. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 90 further comprising at least one integrated photodiode on said chip at a higher order Brillouin zone output of said arrayed waveguide grating to monitor the power of the multiplexed channel signal output or the wavelengths of the transmitter laser sources or their transmission wavelength grid.
96.The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising at least one integrated photodiode on said chip at the output of said arrayed waveguide grating to monitor the power of the multiplexed channel signal output or the wavelengths of the transmitter laser sources or their transmission wavelength grid.
97. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 96 wherein said at least one integrated photodiode can be cleaved from said chip after performance of its monitoring operation.
98. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 97 wherein said at least one integrated photodiode is a PIN photodiode or an avalanche photodiode (ADP).
99. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 wherein there are at least two integrated photodiodes integrated on said chip at a higher order Brillouin zone outputs of said arrayed waveguide grating on respective sides of a first order Brillouin zone output, said first order Brillouin output comprising the multiplexed channel signal output from the chip, said at least two integrated photodiodes to monitor the intensity of the multiplexed channel signal or the passband of a wavelength grid of said arrayed waveguide grating to determined if it is substantially matches the wavelength grid of said DFB laser sources.
100. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 99 wherein said at least two integrated photodiodes area a PIN photodiodes or an avalanche photodiodes (APDs).
101. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 99 wherein said at least two integrated photodiodes can be cleaved from said chip after performing their monitoring operation.
102. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 82 further comprising a plurality of photodiodes integrated on said chip and formed after each of said DFB laser sources, said electro-absorption modulators, and said arrayed waveguide grating for monitoring the output thereof.
103. The monolithic transmitter photonic integrated circuit (T×PIC) chip of claim 102 further comprising a photodiode adjacent to a back end of each of said DFB
laser sources for monitoring the back end light output of said DFB laser sources.
104. A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and an optical combiner having an input optically coupled to received all the channel signal outputs from the modulated sources and provide a multiplexed output signal on an output waveguide from the chip, the modulated sources, combiner and output waveguide all integrated on the chip; the improvement comprising the output waveguide being disposed transversely on the chip to a longitudinal extend of the modulated sources to permit the multiplexed output signal to exit from a facet of the chip that is approximately parallel to the modulated source longitudinal extent.
105. The photonic integrated circuit (PIC) chip of claim 104 wherein said modulated sources are an array of directly modulated laser sources.
106. The photonic integrated circuit (PIC) chip of claim 105 wherein said directly modulated sources are DFB lasers or DBR laser.
107. The photonic integrated circuit (PIC) chip of claim 104 wherein said modulated sources are an array of laser sources optically coupled to an array of electro-optic modulators.

-74-~
108. The photonic integrated circuit (PIC) chip of claim 107 wherein said laser sources are DFB lasers or DBR lasers.
109. The photonic integrated circuit (PIC) chip of claim 107 wherein said electro-optic modulators are electro-absorption modulators, (EAMs) or Mach-Zehnder modulators (MZMs).
110. The photonic integrated circuit (PIC) chip of claim 104 wherein said optical combiner is a power coupler, star coupler, multimode interference (MMI) coupler and arrayed waveguide grating (AWG) or an Echelle grating.
CA2462178A 2002-10-08 2002-12-11 Transmitter photonic integrated circuit (txpic) chips Expired - Fee Related CA2462178C (en)

Applications Claiming Priority (5)

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US10/267,331 2002-10-08
PCT/US2002/032109 WO2003032021A2 (en) 2001-10-09 2002-10-08 TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs
USPCT/US02/32109 2002-10-08
US10/267,331 US7283694B2 (en) 2001-10-09 2002-10-08 Transmitter photonic integrated circuits (TxPIC) and optical transport networks employing TxPICs
PCT/US2002/039940 WO2004034530A1 (en) 2002-10-08 2002-12-11 TRANSMITTER PHOTONIC INTEGRATED CIRCUIT (TxPIC) CHIPS

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