CA2412853A1 - Single crystal diamond prepared by cvd - Google Patents

Single crystal diamond prepared by cvd Download PDF

Info

Publication number
CA2412853A1
CA2412853A1 CA002412853A CA2412853A CA2412853A1 CA 2412853 A1 CA2412853 A1 CA 2412853A1 CA 002412853 A CA002412853 A CA 002412853A CA 2412853 A CA2412853 A CA 2412853A CA 2412853 A1 CA2412853 A1 CA 2412853A1
Authority
CA
Canada
Prior art keywords
cvd
single crystal
crystal diamond
diamond prepared
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002412853A
Other languages
French (fr)
Other versions
CA2412853C (en
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
John Lloyd Collins
Ricardo Simon Sussmann
Barbel Susanne Charlotte Dorn
Andrew John Whitehead
Daniel James Twitchen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0014693A external-priority patent/GB0014693D0/en
Priority claimed from GB0106930A external-priority patent/GB0106930D0/en
Application filed by Individual filed Critical Individual
Publication of CA2412853A1 publication Critical patent/CA2412853A1/en
Application granted granted Critical
Publication of CA2412853C publication Critical patent/CA2412853C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
CA002412853A 2000-06-15 2001-06-14 Single crystal diamond prepared by cvd Expired - Lifetime CA2412853C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB0014693A GB0014693D0 (en) 2000-06-15 2000-06-15 Diamnond
GB0014693.6 2000-06-15
GB0106930A GB0106930D0 (en) 2001-03-20 2001-03-20 Diamond
GB0106930.1 2001-03-20
PCT/IB2001/001037 WO2001096633A1 (en) 2000-06-15 2001-06-14 Single crystal diamond prepared by cvd

Publications (2)

Publication Number Publication Date
CA2412853A1 true CA2412853A1 (en) 2001-12-20
CA2412853C CA2412853C (en) 2009-08-25

Family

ID=26244497

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002412853A Expired - Lifetime CA2412853C (en) 2000-06-15 2001-06-14 Single crystal diamond prepared by cvd

Country Status (16)

Country Link
US (3) US20040221795A1 (en)
EP (2) EP1983080B8 (en)
JP (1) JP4695821B2 (en)
KR (1) KR100837033B1 (en)
CN (1) CN1243855C (en)
AT (1) ATE407237T1 (en)
AU (2) AU2001274368B2 (en)
CA (1) CA2412853C (en)
CZ (1) CZ302228B6 (en)
DE (1) DE60135653D1 (en)
GB (1) GB2383588B (en)
HK (1) HK1057583A1 (en)
IL (2) IL153380A0 (en)
RU (1) RU2288302C2 (en)
TW (1) TW548351B (en)
WO (1) WO2001096633A1 (en)

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Also Published As

Publication number Publication date
US20040221795A1 (en) 2004-11-11
AU2001274368B2 (en) 2004-10-28
EP1983080B1 (en) 2017-02-01
CA2412853C (en) 2009-08-25
ATE407237T1 (en) 2008-09-15
IL153380A (en) 2006-08-20
EP1983080A3 (en) 2012-12-19
IL153380A0 (en) 2003-07-06
DE60135653D1 (en) 2008-10-16
JP2004503460A (en) 2004-02-05
KR20030046338A (en) 2003-06-12
EP1292726A1 (en) 2003-03-19
KR100837033B1 (en) 2008-06-10
CN1441860A (en) 2003-09-10
CZ20024227A3 (en) 2003-12-17
US8501143B2 (en) 2013-08-06
GB2383588B (en) 2004-05-05
TW548351B (en) 2003-08-21
GB2383588A (en) 2003-07-02
US9103050B2 (en) 2015-08-11
WO2001096633A1 (en) 2001-12-20
EP1983080A2 (en) 2008-10-22
AU7436801A (en) 2001-12-24
HK1057583A1 (en) 2004-04-08
US20090175777A1 (en) 2009-07-09
RU2288302C2 (en) 2006-11-27
US20130202518A1 (en) 2013-08-08
EP1983080B8 (en) 2017-08-02
GB0300199D0 (en) 2003-02-05
CN1243855C (en) 2006-03-01
CZ302228B6 (en) 2011-01-05
JP4695821B2 (en) 2011-06-08
EP1292726B1 (en) 2008-09-03
EP1292726B8 (en) 2008-10-29

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