CA2387432A1 - Method and apparatus for etching and deposition using micro-plasmas - Google Patents
Method and apparatus for etching and deposition using micro-plasmas Download PDFInfo
- Publication number
- CA2387432A1 CA2387432A1 CA002387432A CA2387432A CA2387432A1 CA 2387432 A1 CA2387432 A1 CA 2387432A1 CA 002387432 A CA002387432 A CA 002387432A CA 2387432 A CA2387432 A CA 2387432A CA 2387432 A1 CA2387432 A1 CA 2387432A1
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- substrate
- plasma
- dielectric layer
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Plasma etching or deposition is performed over substrates using spatially localized micro-plasmas operating in parallel with each other. A plasma generating electrode is positioned closely adjacent to an exposed surface of the substrate, as on the surface of a dielectric layer applied to the substrate. A selected pressure of the gas in the region of the electrode and the substrate is established, and a voltage is applied between the plasma generating electrode and the substrate or a second electrode to ignite a plasma in the region between the plasma generating electrode and the substra te for a selected period of time. This plasma is limited to the region of the plasma generating electrode adjacent to the exposed surface so that the substrate is plasma treated in a desired pattern.
Claims (50)
1. A method of plasma treatment of substrates comprising:
(a) positioning a plasma generating electrode adjacent to an exposed surface of a substrate;
(b) establishing a selected pressure of a selected gas over the plasma generating electrode and the substrate surface; and (c) applying a voltage to the plasma generating electrode to establish a plasma in the selected gas that is localized in a region between the electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate, wherein the localized region in which the plasma is established is less than the entire surface of the substrate and the gas pressure established over the substrate and electrode is at least 1 torr and the electrode is positioned sufficiently close to the substrate surface that the plasma is established by applying a voltage to the electrode at a voltage level that does not result in arcing.
(a) positioning a plasma generating electrode adjacent to an exposed surface of a substrate;
(b) establishing a selected pressure of a selected gas over the plasma generating electrode and the substrate surface; and (c) applying a voltage to the plasma generating electrode to establish a plasma in the selected gas that is localized in a region between the electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate, wherein the localized region in which the plasma is established is less than the entire surface of the substrate and the gas pressure established over the substrate and electrode is at least 1 torr and the electrode is positioned sufficiently close to the substrate surface that the plasma is established by applying a voltage to the electrode at a voltage level that does not result in arcing.
2. A method of plasma treatment of substrates comprising:
(a) applying a dielectric layer on a substrate surface, the dielectric layer having at least one opening therein that exposes the substrate surface, and applying a plasma generating electrode to the dielectric layer adjacent to the opening in the dielectric layer and to the surface of the substrate exposed at the opening in the dielectric layer;
(b) establishing a selected pressure of a selected gas over the plasma generating electrode and the substrate surface; and (c) applying a voltage to the plasma generating electrode to establish a plasma in the selected gas in a region between the electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate.
(a) applying a dielectric layer on a substrate surface, the dielectric layer having at least one opening therein that exposes the substrate surface, and applying a plasma generating electrode to the dielectric layer adjacent to the opening in the dielectric layer and to the surface of the substrate exposed at the opening in the dielectric layer;
(b) establishing a selected pressure of a selected gas over the plasma generating electrode and the substrate surface; and (c) applying a voltage to the plasma generating electrode to establish a plasma in the selected gas in a region between the electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate.
3. A method of plasma treatment of substrates comprising:
(a) positioning a plasma generating electrode adjacent to an exposed surface of a substrate wherein the electrode is positioned to be spaced within 1,000 µm of the substrate surface;
(b) establishing a selected pressure of a selected gas over the plasma generating electrode and the substrate surface; and (c) applying a voltage to the plasma generating electrode to establish a plasma in the selected gas that is localized in a region between the electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate, wherein the gas pressure established over the substrate and electrode is at least 1 torr and the electrode is positioned sufficiently close the to substrate surface that the plasma is established by applying a voltage to the electrode at a voltage level that does not result in arcing.
(a) positioning a plasma generating electrode adjacent to an exposed surface of a substrate wherein the electrode is positioned to be spaced within 1,000 µm of the substrate surface;
(b) establishing a selected pressure of a selected gas over the plasma generating electrode and the substrate surface; and (c) applying a voltage to the plasma generating electrode to establish a plasma in the selected gas that is localized in a region between the electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate, wherein the gas pressure established over the substrate and electrode is at least 1 torr and the electrode is positioned sufficiently close the to substrate surface that the plasma is established by applying a voltage to the electrode at a voltage level that does not result in arcing.
4. The method of Claim 1 or 3 wherein, after establishing the plasma in the region between the electrode and the substrate for the selected period of time, then moving the electrode to another position adjacent to the surface of the substrate, establishing a selected gas pressure of a selected gas over the electrode and the substrate, and applying a voltage to the electrode to establish a plasma that is localized in a region between the electrode and the substrate to plasma treat the substrate wherein the localized region in which the plasma is established is less than the entire surface of the substrate.
5. The method of Claim 1 or 3 wherein the plasma generating electrode comprises at least two separate electrode segments which are spaced from each other.
6. The method of Claim 1 or 2 wherein the electrode is positioned to be spaced within 1,000 µm of the substrate surface.
7. The method of Claim 1, 2 or 3 wherein the electrode is spaced less than 50 µm from the substrate surface.
8. The method of Claim 1, 2 or 3 wherein the plasma is established to remove material from the substrate.
9. The method of Claim 1, 2 or 3 wherein the plasma is established to add material from the plasma to the substrate.
10. The method of Claim 1, 2 or 3 wherein the plasma is established by applying a DC voltage between the electrode and the substrate surface sufficient to generate a plasma in the region between the electrode and the substrate surface without arcing and to draw positively charged ions toward the substrate surface.
11. The method of Claim 1, 2 or 3 wherein the plasma is established by applying an AC voltage to the electrode sufficient to generate a plasma in the region between the electrode and the substrate surface without arcing.
12. The method of Claim 1 or 3 including the step of moving the electrode across the substrate surface while establishing a plasma between the electrode and the substrate.
13. The method of Claim 1, 2 or 3 wherein the substrate is a silicon wafer, and wherein in the step of applying a voltage to the electrode, a conductive plate is applied to the silicon wafer on a surface thereof opposite to the surface to be treated and a voltage source is connected to the electrode and the conductive plate to provide the voltage between the electrode and the substrate.
14. The method of Claim 1 or 3 wherein the step of positioning the plasma generating electrode comprises applying a dielectric layer having at least one opening therein on the substrate surface and applying the plasma generating electrode to the dielectric layer adjacent to the opening in the dielectric layer and adjacent to the surface of the substrate exposed by the dielectric layer.
15. The method of Claim 14 further including applying a second electrode on the substrate surface, which is between the dielectric layer and the substrate surface, and the step of applying voltage comprises applying voltage between the plasma generating electrode and the second electrode.
16. The method of Claim 14 including after applying a voltage to plasma treat the substrate for a selected period of time, removing the dielectric layer and the plasma generating electrode from the substrate.
17. The method of Claim 16 wherein the step of removing is carried out by dissolving the dielectric layer and the electrode in liquid etchant
18. The method of Claim 1, 2 or 3 wherein the plasma generating electrode is a first plasma generating electrode, and including the step of positioning at least one additional plasma generating electrode adjacent to an exposed surface of the substrate while establishing a selected pressure of the selected gas over the additional plasma generating electrode and the substrate, and applying a voltage to the additional plasma generating electrode to establish a plasma in the selected gas that is localized in a region between the additional electrode and the adjacent exposed surface of the substrate for a selected period of time to plasma treat the substrate such that the localized region in which the plasma is established is less than the entire surface of the substrate and is separated from the localized plasma in the region of the first plasma of electrode.
19. The method of Claim 1 or 3 wherein positioning the plasma generating electrode comprises applying a dielectric layer to the substrate surface and applying the plasma generating electrode to the dielectric layer, and further applying another dielectric layer with a second electrode thereon to the substrate such that the second electrode is spaced from the plasma generating electrode with the exposed substrate surface lying between the electrodes and wherein the step of applying a voltage comprises applying a voltage between the plasma generating electrode and the second electrode
20. The method of Claim 19 further including applying a bottom electrode layer on the substrate under the dielectric layers and the plasma generating electrode and the second electrode and electrically biasing the bottom electrode layer to drawn ions from the plasma toward the substrate surface.
21. The method of Claim 19 further including applying at least one control electrode to the substrate surface between the plasma generating electrode and the second electrode and selectively biasing the control electrode to selectively attract or repel ions in the plasma.
22. The method of Claim 21 wherein the control electrode has at least one opening therein that exposes the surface of the substrate to the plasmas.
23. The method of Claim 1, 2 or 3 wherein the plasma generating electrode is patterned and has at least one opening therein and wherein the exposed surface of the substrate is treated in a pattern corresponding to the patterned plasma generating electrode including the opening therein.
24. The method of Claim 1, 2 or 3 wherein the selected gas is selected from the group consisting of nitrogen, oxygen, argon, sulfur hexafluoride, chlorine, and chlorofluorocarbons to treat the exposed surface of the substrate by etching it.
25. The method of Claim 2 wherein the gas pressure established over the substrate and electrode is greater than 1 torr.
26. Apparatus for plasma treatment of substrates comprising:
(a) a plasma generating electrode with a flat bottom surface;
(b) a holder connected to the electrode to position the electrode bottom surface closely adjacent to and spaced from a surface of a substrate to within 1,000 µm or less;
(c) a conductive connector to provide a conductive connection to the substrate to be treated; and (d) a voltage source connected to the electrode and the conductive connector to selectively provide a voltage between the electrode and the substrate surface to establish a plasma in regions between the electrode and the surface of the substrate.
(a) a plasma generating electrode with a flat bottom surface;
(b) a holder connected to the electrode to position the electrode bottom surface closely adjacent to and spaced from a surface of a substrate to within 1,000 µm or less;
(c) a conductive connector to provide a conductive connection to the substrate to be treated; and (d) a voltage source connected to the electrode and the conductive connector to selectively provide a voltage between the electrode and the substrate surface to establish a plasma in regions between the electrode and the surface of the substrate.
27. Micro-plasma treatment apparatus comprising:
(a) a substrate with a surface to be treated with a plasma;
(b) a dielectric layer mounted on the surface of the substance and having at least one opening therein that exposes the surface of the substrate at the opening; and (c) a plasma generating electrode mounted over the dielectric layer and spaced thereby from the substrate surface such that a plasma may be established between the electrode and the exposed surface of the substrate in the opening in the dielectric layer.
(a) a substrate with a surface to be treated with a plasma;
(b) a dielectric layer mounted on the surface of the substance and having at least one opening therein that exposes the surface of the substrate at the opening; and (c) a plasma generating electrode mounted over the dielectric layer and spaced thereby from the substrate surface such that a plasma may be established between the electrode and the exposed surface of the substrate in the opening in the dielectric layer.
28. The apparatus of Claim 26 wherein the conductive connector comprises a conductive plate having a surface on which the substrate rests with the surface thereof in contact with the conductive plate opposite to a surface of the substrate to be treated.
29. The apparatus of Claim 26 wherein the plasma generating electrode comprises at least two separate electrode segments which are spaced from each other.
30. The apparatus of Claim 26 or 27 further including a chamber enclosing the plasma generating electrode, and the substrate to be treated and including a vacuum pump connected to the chamber and a gas supply connected to the chamber to provide the selected gas to the chamber in which the plasma is to be established.
31. The apparatus of Claim 26 wherein the voltage source is a DC
voltage source.
voltage source.
32. The apparatus of Claim 26 wherein the voltage source is an AC voltage source.
33. The apparatus of Claim 26 wherein the connector comprises a conductive electrode layer on the substrate surface.
34. The apparatus of Claim 27 wherein the dielectric layer has a pattern of plural openings therein with the electrode extending over the openings.
35. The apparatus of Claim 27 wherein the electrode has an opening therein at the opening in the dielectric layer and further including a sealing layer over the electrode that covers the opening in the electrode and the dielectric layer to confine plasma to the regions defined by the opening in the dielectric layer.
36. The apparatus of Claim 27 wherein the electrode has an opening therein which coincides with the opening in the dielectric layer.
37. The apparatus of Claim 27 further including a conducting plate in contact with a surface of the substrate opposite to the surface to be treated, a voltage source, and electrical connectors connected to the electrode and the conductive plate such that a voltage can be applied by the voltage source to the electrode and conductive plate to thereby provide an electric field in regions defined by the openings in the dielectric layer.
38. The apparatus of Claim 27 wherein the electrode has plural separated and electrically isolated segments and including voltage sources connected by electrical lines separately to each electrode segment to apply voltage thereto separately.
39. The apparatus of Claim 38 further including a conductive plate mounted in contact with a surface of the substrate opposite to the surface to be treated and wherein the voltage sources are connected to the conducting plate to apply voltages between the conducting plate and the electrode segments.
40. The apparatus of Claim 26 or 27 wherein the substrate comprises a silicon wafer.
41. The apparatus of Claim 27 including a DC voltage source connected to the electrode to provide a DC voltage to generate a plasma.
42. The apparatus of Claim 27 including an AC voltage source connected to the electrode to provide an AC voltage to generate a plasma.
43. The apparatus of Claim 27 further including a casing surrounding the substrate, dielectric layer, and electrode and sealing the same from the ambient atmosphere, and including electrical leads extending from the electrode and from electrical contact with the substrate to leads extending externally from the casing such that electrical voltage can be applied to the extending leads to selectively establish a plasma in the regions at the opening in the dielectric layer.
44. The apparatus of Claim 27 including a second electrode on the substrate surface and under the dielectric layer, the second electrode having at least one opening therein at the opening in the dielectric layer such that a voltage may be applied between the electrodes to establish a plasma in the openings in the dielectric layer.
45. The apparatus of Claim 44 wherein the second electrode has a plurality of openings therein at the opening in the dielectric layer.
46. The apparatus of Claim 27 wherein the thickness of the dielectric layer is less than 1000 µm.
47. The apparatus of Claim 27 including another dielectric layer with a second electrode thereon mounted on the surface of the substrate such that the second electrode is spaced from the plasma generating electrode with the exposed substrate surface lying between them, whereby a voltage may be applied between the plasma generating electrode and the second electrode for generating a plasma.
48. The apparatus of Claim 47 including bottom electrode layers on the substrate under the dielectric layers and the plasma generating electrode and the second electrode.
49. The apparatus of Claim 47 including at least one control electrode on the substrate surface between the plasma generating electrode and the second electrode and including a voltage source connected to the control electrode to selectively bias it.
50. The apparatus of Claim 49 wherein the control electrode has at least one opening therein that exposes the surface of the substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15881799P | 1999-10-12 | 1999-10-12 | |
| US60/158,817 | 1999-10-12 | ||
| PCT/US2000/028083 WO2001027969A1 (en) | 1999-10-12 | 2000-10-11 | Method and apparatus for etching and deposition using micro-plasmas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2387432A1 true CA2387432A1 (en) | 2001-04-19 |
| CA2387432C CA2387432C (en) | 2010-02-09 |
Family
ID=22569839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2387432A Expired - Lifetime CA2387432C (en) | 1999-10-12 | 2000-10-11 | Method and apparatus for etching and deposition using micro-plasmas |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1221174A1 (en) |
| AU (1) | AU1196001A (en) |
| CA (1) | CA2387432C (en) |
| WO (1) | WO2001027969A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE245310T1 (en) * | 2000-03-14 | 2003-08-15 | Fraunhofer Ges Forschung | METHOD AND DEVICE FOR PLASMA-ASSISTED SURFACE TREATMENT AND USE OF THE METHOD |
| DE10129313C1 (en) * | 2001-06-19 | 2002-11-21 | Fraunhofer Ges Forschung | Sputtering process used for coating and/or surface treating substrates comprises activating the substrate surface in the regions exposed by an electrode mask by igniting a plasma, and coating the substrate in the exposed regions |
| WO2004070819A1 (en) * | 2003-02-05 | 2004-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display |
| US7824520B2 (en) * | 2003-03-26 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
| DE102005042754B4 (en) * | 2005-09-08 | 2008-09-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for the selective plasma treatment of substrates for pretreatment prior to a coating or bonding process |
| WO2009148305A1 (en) * | 2008-06-06 | 2009-12-10 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of moving substrate |
| KR101594464B1 (en) * | 2013-10-02 | 2016-02-18 | 아주대학교산학협력단 | Micro plasma jet device, laminate type micro plasma jet module and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302237A (en) * | 1992-02-13 | 1994-04-12 | The United States Of America As Represented By The Secretary Of Commerce | Localized plasma processing |
| US5688415A (en) * | 1995-05-30 | 1997-11-18 | Ipec Precision, Inc. | Localized plasma assisted chemical etching through a mask |
| DE19826418C2 (en) * | 1998-06-16 | 2003-07-31 | Horst Schmidt-Boecking | Device for generating a plasma and a manufacturing method for the device and use of the device |
-
2000
- 2000-10-11 EP EP00973456A patent/EP1221174A1/en not_active Withdrawn
- 2000-10-11 CA CA2387432A patent/CA2387432C/en not_active Expired - Lifetime
- 2000-10-11 AU AU11960/01A patent/AU1196001A/en not_active Abandoned
- 2000-10-11 WO PCT/US2000/028083 patent/WO2001027969A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2387432C (en) | 2010-02-09 |
| AU1196001A (en) | 2001-04-23 |
| EP1221174A1 (en) | 2002-07-10 |
| WO2001027969A1 (en) | 2001-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100242529B1 (en) | Stage having electrostatic chuck and plasma processing apparatus using same | |
| JP4794449B2 (en) | RF pulsing technology for narrow gap capacitively coupled reactors | |
| KR890013966A (en) | Plasma processing method and apparatus | |
| KR20000071664A (en) | Method of and apparatus for restoring a support surface in a semiconductor wafer processing system | |
| US6719875B1 (en) | Plasma process apparatus | |
| US20030070760A1 (en) | Method and apparatus having plate electrode for surface treatment using capillary discharge plasma | |
| US6827870B1 (en) | Method and apparatus for etching and deposition using micro-plasmas | |
| CA2387432A1 (en) | Method and apparatus for etching and deposition using micro-plasmas | |
| KR100485112B1 (en) | Method of forming a thin film | |
| JPH1027780A (en) | Plasma treating method | |
| KR20090082384A (en) | Device for the pre-treatment of substrates | |
| JP2001223259A (en) | Electrostatic attracting electrode | |
| JPH02130915A (en) | Plasma processing equipment | |
| JP3817171B2 (en) | Plasma process equipment | |
| JPH11233602A (en) | Electrostatic chucking apparatus and apparatus for processing sample using the same | |
| KR101262904B1 (en) | Plasma etching apparatus | |
| JPH10324980A (en) | Electrode device for both side etching apparatus | |
| JP2885150B2 (en) | Dry cleaning method for dry etching equipment | |
| KR19980014175A (en) | Dry Etching Method Using Plasma | |
| JP2000315861A (en) | Apparatus and method for smear elimination | |
| KR100286333B1 (en) | Plasma etching apparatus | |
| JP2003332247A (en) | Electrode substrate, plasma treatment apparatus using same, and plasma treatment method | |
| JP2722861B2 (en) | Dry etching method and apparatus | |
| JPH05234953A (en) | System and method for etching conductive thin film | |
| KR100784793B1 (en) | Plasma processing apparatus and method for treating substrates using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKEX | Expiry |
Effective date: 20201013 |