CA2243375C - Circuit haute tension pour memoires volatiles a semi-conducteurs - Google Patents

Circuit haute tension pour memoires volatiles a semi-conducteurs Download PDF

Info

Publication number
CA2243375C
CA2243375C CA 2243375 CA2243375A CA2243375C CA 2243375 C CA2243375 C CA 2243375C CA 2243375 CA2243375 CA 2243375 CA 2243375 A CA2243375 A CA 2243375A CA 2243375 C CA2243375 C CA 2243375C
Authority
CA
Canada
Prior art keywords
node
supply voltage
circuit
voltage
boosted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA 2243375
Other languages
English (en)
Other versions
CA2243375A1 (fr
Inventor
Jieyan Zhu
Valerie Lines
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TRACESTEP HOLDINGS LLC
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Priority to CA 2243375 priority Critical patent/CA2243375C/fr
Publication of CA2243375A1 publication Critical patent/CA2243375A1/fr
Application granted granted Critical
Publication of CA2243375C publication Critical patent/CA2243375C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
CA 2243375 1998-07-16 1998-07-16 Circuit haute tension pour memoires volatiles a semi-conducteurs Expired - Fee Related CA2243375C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA 2243375 CA2243375C (fr) 1998-07-16 1998-07-16 Circuit haute tension pour memoires volatiles a semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA 2243375 CA2243375C (fr) 1998-07-16 1998-07-16 Circuit haute tension pour memoires volatiles a semi-conducteurs

Publications (2)

Publication Number Publication Date
CA2243375A1 CA2243375A1 (fr) 2000-01-16
CA2243375C true CA2243375C (fr) 2005-09-13

Family

ID=29409645

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2243375 Expired - Fee Related CA2243375C (fr) 1998-07-16 1998-07-16 Circuit haute tension pour memoires volatiles a semi-conducteurs

Country Status (1)

Country Link
CA (1) CA2243375C (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9584118B1 (en) 2015-08-26 2017-02-28 Nxp Usa, Inc. Substrate bias circuit and method for biasing a substrate

Also Published As

Publication number Publication date
CA2243375A1 (fr) 2000-01-16

Similar Documents

Publication Publication Date Title
US5933047A (en) High voltage generating circuit for volatile semiconductor memories
US6353356B1 (en) High voltage charge pump circuits
EP0653760B1 (fr) Circuit élévateur de tension
US5912560A (en) Charge pump circuit for voltage boosting in integrated semiconductor circuits
JP2557271B2 (ja) 内部降圧電源電圧を有する半導体装置における基板電圧発生回路
US7098725B2 (en) Multi stage voltage pump circuit
US5703827A (en) Method and structure for generating a boosted word line voltage and a back bias voltage for a memory array
US4581546A (en) CMOS substrate bias generator having only P channel transistors in the charge pump
US5905402A (en) Voltage pump circuit having an independent well-bias voltage
US6208197B1 (en) Internal charge pump voltage limit control
EP0593105A1 (fr) Pompe de charge négative à grande puissance
US6198340B1 (en) High efficiency CMOS pump circuit
US6356137B1 (en) Voltage boost circuit with low power supply voltage
KR19990030115A (ko) 3상태 논리 게이트 회로를 갖는 반도체 집적회로
KR100381489B1 (ko) 차지 펌프 회로
US5757714A (en) Semiconductor memory device with on-chip boosted power supply voltage generator
US5901055A (en) Internal boosted voltage generator of semiconductor memory device
JP3846741B2 (ja) 半導体集積回路の電圧昇圧回路
KR0183467B1 (ko) 프로그램 전압이 상승하는 시간이 짧은 반도체 기억장치
US5786723A (en) Voltage switching circuit for a semiconductor memory device
GB2301211A (en) Voltage boosting circuit for a semiconductor memory
CA2243375C (fr) Circuit haute tension pour memoires volatiles a semi-conducteurs
KR100462863B1 (ko) 고전압 발생회로 및 방법
KR100605591B1 (ko) 반도체 소자의 승압전압 발생기
KR20090071860A (ko) 크로스 커플 전하펌프방식의 저전압 dram용 고전압발생기

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed