CA2228065A1 - Detecteur a panneau plat pour radiographie a bruit electronique reduit - Google Patents
Detecteur a panneau plat pour radiographie a bruit electronique reduit Download PDFInfo
- Publication number
- CA2228065A1 CA2228065A1 CA 2228065 CA2228065A CA2228065A1 CA 2228065 A1 CA2228065 A1 CA 2228065A1 CA 2228065 CA2228065 CA 2228065 CA 2228065 A CA2228065 A CA 2228065A CA 2228065 A1 CA2228065 A1 CA 2228065A1
- Authority
- CA
- Canada
- Prior art keywords
- gate
- flat panel
- source
- panel detector
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 71
- 238000003384 imaging method Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 230000003071 parasitic effect Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 29
- 239000011669 selenium Substances 0.000 description 17
- 229910052711 selenium Inorganic materials 0.000 description 12
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- 241001481828 Glyptocephalus cynoglossus Species 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000005387 chalcogenide glass Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
Détecteur à panneau plat (20) pour radiographie comprenant un ensemble de pixels (22) disposés en rangées et en colonnes. Chacun des pixels a une électrode de pixel (36) destinée à accumuler une charge proportionnelle à l'exposition du pixel au rayonnement. Un transducteur de rayonnement (C¿SE?) est placé sur l'ensemble et se trouve exposé au rayonnement incident. Une série de lignes source (26) est prévue, chaque ligne de source assurant l'interconnexion des pixels soit dans des rangées soit des colonnes individuelles de l'ensemble. Est également prévue une série de lignes de grille (24) assurant chacune l'interconnexion des pixels soit dans des rangées, soit dans des colonnes individuelles, non interconnectées par les lignes de source. Les lignes de source et les lignes de grille se croisent les unes les autres pour définir une série de noeuds à recouvrement. Un système de blindage assure le blindage des lignes de grille par rapport aux lignes de source au niveau des noeuds à recouvrement afin d'atténuer la capacité parasite au niveau de ces noeuds. Selon un mode de réalisation, le système de blindage revêt la forme d'une plaque métallique de blindage polarisée (54) placée entre les lignes de grille et les lignes de source, à proximité des noeuds à recouvrement. Selon un autre mode de réalisation, le système de blindage revêt la forme d'une plaque de blindage (275) constituée d'un matériau semi-conducteur placé entre les lignes de grille et les lignes de source, contiguë aux noeuds à recouvrement et reliée à un conducteur métallique polarisé (277).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2228065 CA2228065A1 (fr) | 1995-07-31 | 1995-07-31 | Detecteur a panneau plat pour radiographie a bruit electronique reduit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2228065 CA2228065A1 (fr) | 1995-07-31 | 1995-07-31 | Detecteur a panneau plat pour radiographie a bruit electronique reduit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2228065A1 true CA2228065A1 (fr) | 1997-02-13 |
Family
ID=4162032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2228065 Abandoned CA2228065A1 (fr) | 1995-07-31 | 1995-07-31 | Detecteur a panneau plat pour radiographie a bruit electronique reduit |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2228065A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6546075B1 (en) | 1999-05-10 | 2003-04-08 | Epsirad Inc. | Energy sensitive detection systems |
-
1995
- 1995-07-31 CA CA 2228065 patent/CA2228065A1/fr not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6546075B1 (en) | 1999-05-10 | 2003-04-08 | Epsirad Inc. | Energy sensitive detection systems |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |