CA2207337A1 - Detecteur de radon integre cmos - Google Patents
Detecteur de radon integre cmosInfo
- Publication number
- CA2207337A1 CA2207337A1 CA 2207337 CA2207337A CA2207337A1 CA 2207337 A1 CA2207337 A1 CA 2207337A1 CA 2207337 CA2207337 CA 2207337 CA 2207337 A CA2207337 A CA 2207337A CA 2207337 A1 CA2207337 A1 CA 2207337A1
- Authority
- CA
- Canada
- Prior art keywords
- electrically connected
- channel mosfet
- radon
- pulse signal
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 title claims description 64
- 229910052704 radon Inorganic materials 0.000 title claims description 62
- 239000002245 particle Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 5
- 230000003252 repetitive effect Effects 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 19
- 229920002799 BoPET Polymers 0.000 description 10
- 239000005041 Mylar™ Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000012544 monitoring process Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000003570 air Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- GWUSZQUVEVMBPI-UHFFFAOYSA-N nimetazepam Chemical compound N=1CC(=O)N(C)C2=CC=C([N+]([O-])=O)C=C2C=1C1=CC=CC=C1 GWUSZQUVEVMBPI-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000036278 prepulse Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010058467 Lung neoplasm malignant Diseases 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 201000005202 lung cancer Diseases 0.000 description 1
- 208000020816 lung neoplasm Diseases 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005258 radioactive decay Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/17—Circuit arrangements not adapted to a particular type of detector
- G01T1/178—Circuit arrangements not adapted to a particular type of detector for measuring specific activity in the presence of other radioactive substances, e.g. natural, in the air or in liquids such as rain water
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2207337 CA2207337A1 (fr) | 1997-06-23 | 1997-06-23 | Detecteur de radon integre cmos |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA 2207337 CA2207337A1 (fr) | 1997-06-23 | 1997-06-23 | Detecteur de radon integre cmos |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2207337A1 true CA2207337A1 (fr) | 1998-12-23 |
Family
ID=4160854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2207337 Abandoned CA2207337A1 (fr) | 1997-06-23 | 1997-06-23 | Detecteur de radon integre cmos |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2207337A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113625327A (zh) * | 2021-07-27 | 2021-11-09 | 衡阳师范学院 | 采用CMOS图像传感器测量Rn-222的装置及方法 |
-
1997
- 1997-06-23 CA CA 2207337 patent/CA2207337A1/fr not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113625327A (zh) * | 2021-07-27 | 2021-11-09 | 衡阳师范学院 | 采用CMOS图像传感器测量Rn-222的装置及方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Dead |