CA2204394C - Compositions silicium-germanium-carbone et processus associes - Google Patents

Compositions silicium-germanium-carbone et processus associes Download PDF

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Publication number
CA2204394C
CA2204394C CA 2204394 CA2204394A CA2204394C CA 2204394 C CA2204394 C CA 2204394C CA 2204394 CA2204394 CA 2204394 CA 2204394 A CA2204394 A CA 2204394A CA 2204394 C CA2204394 C CA 2204394C
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CA
Canada
Prior art keywords
layer
etch
silicon
carbon
atomic percent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA 2204394
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English (en)
Other versions
CA2204394A1 (fr
Inventor
Mcdonald Robinson
Richard C. Westhoff
Charles E. Hunt
Li Ling
Ziv Atzmon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Arizona Board of Regents of ASU
Lawrence Semiconductor Research Laboratory Inc
Original Assignee
University of California
Arizona Board of Regents of ASU
Lawrence Semiconductor Research Laboratory Inc
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Application filed by University of California, Arizona Board of Regents of ASU, Lawrence Semiconductor Research Laboratory Inc filed Critical University of California
Priority claimed from PCT/US1995/013883 external-priority patent/WO1996015550A1/fr
Publication of CA2204394A1 publication Critical patent/CA2204394A1/fr
Application granted granted Critical
Publication of CA2204394C publication Critical patent/CA2204394C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

Compositions à base de silicium-germanium qui comprennent du silicium, du germanium et du carbone (Si-Ge-C), procédés permettant de tirer une ou plusieurs couches épitaxiales (42) Si-Ge-C sur un substrat (32), réactifs d'attaque particulièrement adaptés aux couches d'arrêt (42) d'attaque Si-Ge-C et nouveaux procédés d'utilisation de compositions Si-Ge-C. La présente invention concerne en particulier des compositions Si-Ge-C utilisables spécialement en tant que couches d'arrêt d'attaque, des processus associés et des réactifs d'attaque utiles pour la fabrication en microélectronique et en nanotechnologie.
CA 2204394 1994-11-10 1995-10-26 Compositions silicium-germanium-carbone et processus associes Expired - Fee Related CA2204394C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33694994A 1994-11-10 1994-11-10
US08/336,949 1994-11-10
PCT/US1995/013883 WO1996015550A1 (fr) 1994-11-10 1995-10-26 Compositions silicium-germanium-carbone et processus associes

Publications (2)

Publication Number Publication Date
CA2204394A1 CA2204394A1 (fr) 1996-05-23
CA2204394C true CA2204394C (fr) 2000-11-07

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CA 2204394 Expired - Fee Related CA2204394C (fr) 1994-11-10 1995-10-26 Compositions silicium-germanium-carbone et processus associes

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CA (1) CA2204394C (fr)

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CA2204394A1 (fr) 1996-05-23

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