CA2064319A1 - Device including a carrier member, a semiconductor laser and leads - Google Patents

Device including a carrier member, a semiconductor laser and leads

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Publication number
CA2064319A1
CA2064319A1 CA002064319A CA2064319A CA2064319A1 CA 2064319 A1 CA2064319 A1 CA 2064319A1 CA 002064319 A CA002064319 A CA 002064319A CA 2064319 A CA2064319 A CA 2064319A CA 2064319 A1 CA2064319 A1 CA 2064319A1
Authority
CA
Canada
Prior art keywords
semiconductor laser
carrier member
leads
terized
charac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002064319A
Other languages
French (fr)
Inventor
Hans-Peter Mayer
Gerhard Luz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent NV
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2064319A1 publication Critical patent/CA2064319A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Waveguides (AREA)

Abstract

Abstract Device Including a Carrier Member, a Semiconductor Laser and Leads For the optical transmission of data, opto-electronic transducer modules are employed which serve as transmitter or receiver modules. In addition to other electrical com-ponents, the transducer modules include, in particular, a device equipped with a semiconductor laser (5) that serves either as transmitter or as receiver.
The invention provides a device which includes a carrier member made of a ceramic material, preferably a block (1) of aluminum nitride. The leads are microstriplines (2 to 4).
This device is suitable for transmissions in the GHz range.

(Figure 1)

Description

TranslatiOn:

DEVICI~ I)ING A ~IER MI~ER, A Sl~lqICOl~DUCTOR IASE:R
D I,~ADS

The invention relates to a device including a semicon-ductor laser and leads according to the preamble of claim 1.
For optical data transmi~sions over light waveguides, opto-electronic transducer modules are required as transmit-ter or receiver modules. In addition to other electrical components, the transducer modules include, in particular, a device equipped with a semiconductor laser that serves either as transmitter or as receiver and is applied to the top surface o~ a carrier member. Leads al~o applied to the carrier member serve as elactrical connections for the semiconductor laser German Published~Patent Application DE-A1 4,013,630 discloses Buch a device that incIudes a semiconductor laser and leads. The carrier membar i5 made of silicon. ~he semiconductor~laser i5~ connected directly with a first lead and by way of~a conna~ting wira, with~a second laad. ~his device ha~ th~ drawbaok that it is suitable for optical data tran~nission at most up to the MH2 range.
-,"
., .
:.
2 ~

It is the object o~ the invention to provide an arrange-ment including a semiconductor laser and leads which is suitable for optical data transmissions in the highest frequency range.
This is accomplished as defined in claim 1.
Features of the invention will become evident from the dependent claims.
Instead of silicon, the invention employs a ceramic material for the carrier member. Ceramic m~terials, ~or example aluminum oxide tA1203) ceramics, have the advantage over silicon o~ having a much higher specific electrical resistance. For example, the specific resistance of alumi-num oxide ceramics is higher at least by a factor of 108 than that o~ an undoped, that is, semi-insulating silicon. --Compared to semi-insulating gallium arsenide, the specific resistanco o~aluminum oxide aePamics is higher at least by a factor o~ 104. Due to the lower specific resistances, ilicon and gallium arsenide, when employed as substrates for leads, exhibit high leakage losses if high or extremely high frequency electrical~signals propagate through the leads. ~i : ~ :
Another drawback o~ silicon is that the purity of the carrier member realized during manufaoture is lost agaln in subsequent proaesses for producing the leads. ~ j , ' : ~
:: ~ .

~0~3~9 In high temperature diffusion processes or in the production of layers in a vacuum vapor depositing system, the silicon is enriched with impurities, thus reducing its specific resistance. Particularly suitable ceramic materials for the carrier member are aluminum nitride and boronitride.
Both materials exhibit high thermal conductivity. Addition-ally, aluminum nitride has a coefficient o~ thermal expansion which approximately corresponds to that of the substrate (indium phosphide) of the semiconductor laser.
According to one embodiment o~ the invention, the semiconductor laser is applied to the edge of the surface of the carrier member in such a way that no percentage of the transmi6sion light emitted by the semiconductor laser is absorbed or reflected by the surface of the carrier member.
Instead, thanks to the manner of attachment o~ the semicon-ductor laser, it is possible to easily adjust a light waveguide with regpect to the beam of transmitted light.
In a pre~erred embodiment, the microstriplines are terminated by ohmic resistors which are adapted to the characteristic impedances of the microstriplines. The ohmic resistor~ are here attached to the carrler member at a location xemote ~rom the semiconductor laser so as to prevent the æemiconductor laser ~rom being additionally hsated by the heat generated by the resistors.
~ ' : -In a further preferred embodiment, a direct current and an alternating current composed of the electrical high frequency signals are supplied to the semiconductor laser through separate lines. This has the advantage that the lines can be adapted ~pecifiaally to the type of current and a terminating resistor is not charged with direct current.
The device according to the invention is suikable for high frequency signals at a frequency of more than 20 GHz.
Other advantageous features of the invention will become evident from the remaining dependent claims.
The invention will now be described with reference to embodiments thereof that are illustrated in the drawing figuras. It i6 shown in:
Fig. 1, a plan view of a first device including a semiconductor laser and microstriplines ,:. . ~, ...
attached to the top surface of a carrier member;
Fig. 2, a coil formed by a microstripline;
Fig. 3, a side view of the first device; and Fig. 4, ~ a plan Yiew of a second device.
Figure 1 shows the first device which includes a carrier member composed of a ceramio material, for example of aluminu~;nitride (AlN~ or boronitride (BN), and has the shape of a blocX 1. On it microstriplines 2, 3 and 4 are , ~
'' ':

:

.- 2 ~

provided as leads. Microstripline 2 serves as the lead for high frequency signals that are superposed on a direct current for a semiconduotor laser 5. Semiconductor laser 5 is operated by the direct current and is modulated by the high frequency signals. Semiconductor laser 5 is soldered onto a region 20 of microstripline 2. Its underside is metallized and serves as electrical contact with region 20 of microstripline 2. on its top surface, the semiconductor laser is provided with a ~urther electrical contact 50 which is connected with microstripline 3 by way of a bonding wire 6. Together with the electrical components downstream of it when seen in the direction of transmission of the high frequency signals, microstripline 3 serves to conduct the high frequency signals to a ground contact. By way of an ohmic resistor 7, microstripline 3 is connected with micro-stripline 4. The latter forms the edge outline of a bore 8 that is elactrically conductively plated to its cylindrical interior wall.
Microstriplines 2 and 3 have a compensated bend 21 and 31, resp~ctively, in order to keep reflection of the high frequency signals low~ Such compensated bend~ 21, 31 are customary in ~crowave circuits and are disclosed, for example, by R. K. Ho~mann, in "Integrierte Mikrowellenschal-; -~5 -.
... .. . . . . . . . . . . .

S '~ ~ ~ 9 tungen" [Integrated Microwave Circuits], Berlin, Heidelberg, New York, Tokyo (1983), page 97.
Microstripline 2, ~or example, has a characteristic impedance of 50 n. It should there~ore be terminated by an ohmia resistor of 50 n. I~, however, an ohmic resistor were included betw~en microstripline 2 and semiaonductor laser 5, the heat generated in the latter would have an influence on the characteristics o~ semiconductor laser 5.
Since, however, semiconductor laser 5 constitutes, for example, an ohmic resistance of 5 Q, micro~tripline 3, which lies downstream of semiconductor laser 5 in the direction o~
transmission of the high frequency signals, must have a characteris~ic impedance o~ ~5 n in order to ~orm, together with semiconductor laser 5, a 50 n~terminating resistance for microstripline 2. .- .
Since miarostripline 3 nowAhas a characteristic im~ ~ ~ i pedance of 45 n, it requires an ohmic terminating res1stance of likewise 4S n; thi is~resigtor 7.
.
;~ Semiconductor laser 5 is arranged on~ block 1 in such a manner that it is flush with one side edge 10 of block 1.
The transm~tting light generated by semiconductor laser 5 ~s ;.
:: : : : : :~`
emitted through the it~ transverse side disposed on side edge 10.

,. .

Instead of a single bonding wire 6, a plurality of bonding wires may be provided to connect semiconductor laæer S and microstripline 3. Since a bonding wire as electrical component ess~ntially constituteC; an inductance, such inductance can be reduced if several bonding wires ~orm the connection betwean semiconductor laser 5 and microstripline 3.
From this microstripline, the direct current component and the high frequency signals can be transferred separately to microstripline 4 i~ an inductive component 9, her~ shown for the ~ak~ o~ simplicity as a co.il formed by a wire, is provided in parallel with resistor 7.
Pre~erably, component 9 (Figure 2) is Pormed by a coil which is connected, on the one hand, with microstripline 3 and, on the other hand, by way of a bonding wire 90, with microstriplina 4. In this case-, component 9 is configured either as a microstripline or as another lead.
Figure 3 i~ a schematic representation of the layer structure on block 1 (not to scale). Microstriplines 2 to 4 are each composed of three sup~rposed layers: an adhesive layer 11, a solder layer 12 and a protective layer 13.
Adhe~ive layer 11 is composed of a nickel-chromium alloy, solder 13yer 12 of nickel and protective layer 13 of gold.

- 7 - :

~ ~3 ~

Adhesive layer 1~ and solder layer 12 are pre~erably vapor-deposited onto block 1, pro~ective layer 13 is applied electrochemically. Only adhesive layer 11 and solder layer 12 are present in region 20. In part of region 20 on solder layer 12, a layer sequence 14 containing gold and tin is applied on which semiconductor laser 5 is disposed.
Ohmic resistor 7 i5 formed in that the adhesive layer 11 is the only layer present there. On its underside, block 1 is covered by a layer 15 serving as ground contact. The interior wall of bore ~ (not shown in Figure 3) is likewi;se covered by adhesive layer 11, solder layer 12 and protective layer 13.
In a second device shown in Figure 4, the leads for the direct current and those for the alternating current are separated from one another. The high frequency signals are supplied to semiconductor laser-5 through microstriplin~ 2 by way of a capacitor 16, a microstripline 17 and region 20 of microstripline 2. Capacitor 16 serves to electriaally separate the direct current component from microstripline 2.
The direct current component iB supplied to semiconductor laser 5 through a line 18, an ohmic resistor 19, a line 22, an inductive component 23 as well as microstripline 1~ and region 20. ~h~e inductive component ~3 is preferably con-figured in the mannar shown in Figure 2.

. .
.. . .. . . .

: : ,~., .. :

- : :':; ~

12 are present in region 20. In part of reglon 20 on solder layer 12, a layer sequence 14 containing gold and tin i5 applied on which semiconductor laser 5 is disposed.
Ohmic re6istor 7 i~ ~ormed in that the adhesive lay~r 11 is the only layer present there. On its underside, block 1 is covered by a layer 15 serving as ground contact. The interior wall o~ bore ~ (not shown in Figure 3) is likewise covered by adhesive layer 11, solder layer 12 and protective layer 13.
In a second device shown in Figure 4, the leads ~or the direct current and those ~or the alternating current are separated from one another. The high frequency signals are supplied to semiconductor laser 5 through microstripllne 2 by way of a capacitor 16, a microstripline ~7 and region 20 o~
microstripline 2. Capacitor 16 serves to electrically separate the direct current component from microstripline 2.
The direct current component is supplied to semiconductor laser 5 through a line 18, an ohmic resistor 19, a line 22, an inductive component 23 as well as microstripline 17 and region 20. ~he inducti~e component 23 is preferably con-figured in tha manner shown in Figure 2.

- .
-:

:
,.......... : , ' , ' : . :

.: . ` : ; ~ ~ :
,, ,: . .

~' ' ' :
' : ,

Claims (8)

1. A device including a carrier member, a semiconductor laser (5) and leads for electrical connections, wherein the semiconductor laser (5) and the leads are attached to the top surface of the carrier member, characterized in that the leads are microstriplines (2 to 4) and the carrier member is composed of a ceramic material.
2. A device according to claim 1, characterized in that the ceramic material is aluminum nitride.
3. A device according to claim 1, characterized in that the ceramic material is boronitride.
4. A device according to one of claims 1 to 3, charac-terized in that the underside of the carrier member is provided with a ground contact which is electrically conduc-tively connected with an electrical contact on the top side of the carrier member by way of a plated-through bore (8).
5. A device according to one of claims 1 to 4, charac-terized in that the side edge of the semiconductor laser (5), from which transmission light can be emitted for the optical transmission, is flush with one side edge (10) of the carrier member.
6. A device according to one of claims 1 to 5, charac-terized in that the microstriplines (2 to 4) are composed of an adhesive layer (11), a solder layer (12) and a protective layer (13).
7. A device according to one of claims 1 to 5, charac-terized in that it includes an ohmic resistor (7) formed exclusively of an adhesive layer (11).
8. A device according to one of claims 1 to 7, charac-terized in that a direct current source and an alternating current source are additionally disposed on the carrier member in order to generate a direct current and an alternat-ing current, respectively, for the semiconductor laser (5).
CA002064319A 1991-03-28 1992-03-27 Device including a carrier member, a semiconductor laser and leads Abandoned CA2064319A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4110378A DE4110378A1 (en) 1991-03-28 1991-03-28 FITTING WITH A CARRIER PART, A SEMICONDUCTOR LASER AND CONTACTS
DEP4110378.5 1991-03-28

Publications (1)

Publication Number Publication Date
CA2064319A1 true CA2064319A1 (en) 1992-09-29

Family

ID=6428498

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002064319A Abandoned CA2064319A1 (en) 1991-03-28 1992-03-27 Device including a carrier member, a semiconductor laser and leads

Country Status (5)

Country Link
EP (1) EP0505842B1 (en)
JP (1) JPH05110210A (en)
CA (1) CA2064319A1 (en)
DE (2) DE4110378A1 (en)
ES (1) ES2089266T3 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3662402B2 (en) * 1997-11-07 2005-06-22 三菱電機株式会社 Optical semiconductor module
DE19823691A1 (en) 1998-05-27 1999-12-02 Siemens Ag Housing arrangement for laser module
US20030012524A1 (en) * 2001-06-26 2003-01-16 The Furukawa Electric Co., Ltd. Optical module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761788A (en) * 1985-10-28 1988-08-02 American Telephone And Telegraph Company Stripline mount for semiconductor lasers
JPH0714102B2 (en) * 1988-01-28 1995-02-15 三菱電機株式会社 Optical coupling device
US4937660A (en) * 1988-12-21 1990-06-26 At&T Bell Laboratories Silicon-based mounting structure for semiconductor optical devices

Also Published As

Publication number Publication date
EP0505842A1 (en) 1992-09-30
ES2089266T3 (en) 1996-10-01
EP0505842B1 (en) 1995-09-06
DE4110378A1 (en) 1992-10-01
DE59203515D1 (en) 1995-10-12
JPH05110210A (en) 1993-04-30

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