CA2006338A1 - Uniformly-coated ceramic particles - Google Patents
Uniformly-coated ceramic particlesInfo
- Publication number
- CA2006338A1 CA2006338A1 CA 2006338 CA2006338A CA2006338A1 CA 2006338 A1 CA2006338 A1 CA 2006338A1 CA 2006338 CA2006338 CA 2006338 CA 2006338 A CA2006338 A CA 2006338A CA 2006338 A1 CA2006338 A1 CA 2006338A1
- Authority
- CA
- Canada
- Prior art keywords
- carbide
- nitride
- particles
- particle
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000002245 particle Substances 0.000 title claims abstract description 150
- 239000000919 ceramic Substances 0.000 title claims abstract description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 88
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 85
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910001868 water Inorganic materials 0.000 claims abstract description 51
- 150000004767 nitrides Chemical class 0.000 claims abstract description 46
- 239000004094 surface-active agent Substances 0.000 claims abstract description 44
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000007787 solid Substances 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 23
- 238000001556 precipitation Methods 0.000 claims abstract description 22
- 238000000280 densification Methods 0.000 claims abstract description 17
- 239000002612 dispersion medium Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 52
- 239000000203 mixture Substances 0.000 claims description 31
- -1 titanium alkoxides Chemical class 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000000725 suspension Substances 0.000 claims description 21
- DEXZEPDUSNRVTN-UHFFFAOYSA-K yttrium(3+);trihydroxide Chemical compound [OH-].[OH-].[OH-].[Y+3] DEXZEPDUSNRVTN-UHFFFAOYSA-K 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 239000011343 solid material Substances 0.000 claims description 14
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 13
- 229910010293 ceramic material Inorganic materials 0.000 claims description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 230000007062 hydrolysis Effects 0.000 claims description 9
- 238000006460 hydrolysis reaction Methods 0.000 claims description 9
- 239000002609 medium Substances 0.000 claims description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 239000003446 ligand Substances 0.000 claims description 8
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 8
- 150000004692 metal hydroxides Chemical class 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 125000003342 alkenyl group Chemical group 0.000 claims description 2
- 239000008364 bulk solution Substances 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 125000003827 glycol group Chemical group 0.000 claims description 2
- 150000004820 halides Chemical group 0.000 claims description 2
- 229920000592 inorganic polymer Polymers 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 150000004756 silanes Chemical class 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 235000010210 aluminium Nutrition 0.000 claims 2
- 241000588731 Hafnia Species 0.000 claims 1
- 230000002730 additional effect Effects 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical group OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- 239000000706 filtrate Substances 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 claims 1
- 239000011817 metal compound particle Substances 0.000 claims 1
- 125000003396 thiol group Chemical class [H]S* 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 36
- 239000000377 silicon dioxide Substances 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 230000002939 deleterious effect Effects 0.000 abstract description 8
- 239000000047 product Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 5
- 150000004679 hydroxides Chemical class 0.000 abstract description 3
- 239000002244 precipitate Substances 0.000 abstract description 3
- 238000003801 milling Methods 0.000 description 38
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 25
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- 229910052727 yttrium Inorganic materials 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 10
- 238000007792 addition Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 229960004592 isopropanol Drugs 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 230000001476 alcoholic effect Effects 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 229910001960 metal nitrate Inorganic materials 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 3
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 238000004108 freeze drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 231100001261 hazardous Toxicity 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 150000003748 yttrium compounds Chemical class 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 208000005156 Dehydration Diseases 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241001622933 Gazza Species 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 101100380548 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) apg-2 gene Proteins 0.000 description 1
- 101100436382 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) apg-6 gene Proteins 0.000 description 1
- 235000008098 Oxalis acetosella Nutrition 0.000 description 1
- 240000007930 Oxalis acetosella Species 0.000 description 1
- 229920002415 Pluronic P-123 Polymers 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical class [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920001983 poloxamer Polymers 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
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Abstract
ABSTRACT OF THE DISCLOSURE
Solids that are subject to a deleterious reaction with a dispersion medium in which they are suspended can be safely com-minuted in that dispersion medium by providing therein a surfac-tant capable of reacting with the solid at a faster rate than the dispersion medium can so react to thereby suppress the dele-terious reaction. In particular, unsintered silicon nitride or silicon carbide which when contacted with water would decompose to form silica on their surfaces can be milled in water, with-out producing excessive amounts of silica. The dispersions pro-duced are sufficiently stable to be filtered through openings of 2 microns with loss of no more than 5% of the silicon ni-tride or carbide. Stable dispersions of solids in liquids can be coated with a different solid by surface precipitation under conditions which preclude the formation of a bulk precipitate.
Thus, ceramic nitride or carbide particles are coated with den-sification aids, such as yttria, by the surface precipitation of the corresponding hydroxides on the ceramic particles in water. Ceramic powders prepared in this way densify to give products with moduli of rupture and fracture toughnesses at least as high as those made from powders conventionally milled in alcohol with lower amounts of densification aid.
Solids that are subject to a deleterious reaction with a dispersion medium in which they are suspended can be safely com-minuted in that dispersion medium by providing therein a surfac-tant capable of reacting with the solid at a faster rate than the dispersion medium can so react to thereby suppress the dele-terious reaction. In particular, unsintered silicon nitride or silicon carbide which when contacted with water would decompose to form silica on their surfaces can be milled in water, with-out producing excessive amounts of silica. The dispersions pro-duced are sufficiently stable to be filtered through openings of 2 microns with loss of no more than 5% of the silicon ni-tride or carbide. Stable dispersions of solids in liquids can be coated with a different solid by surface precipitation under conditions which preclude the formation of a bulk precipitate.
Thus, ceramic nitride or carbide particles are coated with den-sification aids, such as yttria, by the surface precipitation of the corresponding hydroxides on the ceramic particles in water. Ceramic powders prepared in this way densify to give products with moduli of rupture and fracture toughnesses at least as high as those made from powders conventionally milled in alcohol with lower amounts of densification aid.
Description
~- 20~6338 Docket P-2271C
UNIFORMLY-COATED CERAMIC PARTICLES
PARAM H. TEWARI
40 Marlboro Road Hudson, MA 01749 TECHNICAL FIELD
This invention relates to ceramic particles, especially silicon nitride or silicon carbide particles, having a substan-tially uniform coating thereon of one or more conventional ox-M 3 sintering aids, e.g. yttria, or a precursor thereto, in theastantial absence of any individual sintering aid oxide parti-3S. Due to a uniform coating of sintering aid on each ceram-~ nitride or carbide particle, the total amount of sintering aid required to produce a sintered body having excellent high temperature properties may be reduced substantially below the amounts now conventionally used. The invention also relates to a method of preparing such sintering aid-coated particles in the substantial absence of any free sintering aid particles by means of a surface precipitation of a precursor to the sinter-1~ aid upon the ceramic particles.
The invention further relates to the general comminution ~ one material in the presence of another material which is kr~own to deleteriously interact with the freshly formed sur-faces of the material being comminuted. More particularly, it relates to the comminution of ceramic particles, especially sil-icon nitride or silicon carbide particles, in water by a pro-cess which precludes deleterious reactions between the water ~nd the ceramic particles. The aqueous comminution process al-~o permit~ the incorporation of additional aomponents, e.g. sin-tering aids, onto the freshly formed ceramic particle surfaces.
. .
X~6338 TECHNICAL BACKGROUND
Traditionally, sintering aid addition to ceramic materi-als which undergo a liquid phase densification is performed by simply milling a solid sintering aid powder with the ceramic material in the presence of an alcoholic solvent, normally iso-propanol. The milling serves both to comminute the ceramic par-ticles to a smaller and more uniform particle size and to dis-tribute particles of the sintering aid somewhat uniformly among the ceramic particles. The result is a simple mixture of dif-ferent particles which inherently means that some portions of the mixture will be richer in sintering aid particles while oth-e~ portions will be poorer in them. This variation in sinter-aid concentration is believed to be a cause for failure of~e ceramic parts, particularly at elevated temperatures. In lition, due to the inherent non-uniformity the total amount of sintering aid needed to produce dense bodies from the ceram-iC5 is quite high. This is generally undesirable, especially for high temperature performance, because it can result in the presence of an excessive amount of glassy phase. There is need for ceramic material/sintering aid compositions which contain a lower than conventional amount of sintering aid, but have the ~intering aid distributed more uniformly so that the resultant densified bodies exhibit desirable high temperature properties.
This is particularly true for silicon nitride compositions.
Furthermore, the comminution of ceramic materials such as silicon nitride and silicon carbide being performed in conven-tional alcoholic solvents is both expensive and hazardous. The ability to perform the comminution in water without causing de-gradation of the ceramic material or generation of explosive levels of gases would be highly desirable. The present inven-tion evolved ~rom seeking a solution to each of these problems and a recognition that they are interrelated.
Previous attempts to resolve these problems has been di-rected at solving each individually, rather than simultaneous-,.. . ; .- . .. .. ~
. - ' i , 20~6338 ly. U.S. Pat. No. 3,830,652 (Gazza) claims a densifiable sili-con nitride composition containing an yttrium compound wherein the weight of yttrium in the yttrium compound is about 1.0 to 3.5 weight percent of the weight of the silicon nitride. This simple approach of merely using lower than normal amounts of yt-tria sintering aid would be wonderful, except that, as shown by comparative example below, it has not been found to produce sil-icon nitride bodies having sufficient high temperature proper-ties to be commercially useful. As a result, currently produc-ed silicon nitride bodies generally contain a minimum of about 4% by weight yttria to have sufficient high temperature proper-ties to be commercially useful.
Another attempt at reducing the amount of sintering aid is disclosed in Japanese Publn. 62-265,171 which teaches sinter-ing a silicon nitride material with a sintering aid which has been prepared by spraying aqueous metal salts in a solvent into a plasma flame. A reduced sintering aid usage is alleged, but only a simple mixture of silicon nitride particles and sinter-ing aid oxide particles is produced.
A further method of adding a sintering aid is shown in Ja-panese Publn. 62-187,170 in which a mixture of silicon nitride ~articles and silicon carbide whiskers is impregnated with a lvent-based solution of yttrium hydroxide or alkoxide and ~aen the impregnated hydroxide or alkoxide is transformed to an oxide. The process is similar to that of Shaw et al., discuss-ed below, and produces a substantial amount of yttrium oxide particles intimately blended with silicon nitride particles and silicon carbide whiskers as well as a small amount of the ni-tride and carbide having a partial yttria coating.
A still further attempt is disclosed in Japanese Publn.
62-158,166 in which silicon nitride powder is mixed with a so-lution containing a metal nitrate, the solvent simply evaporat-ed, and the mixture dried and baked to convert the nitrate to an oxide. The solvent is stated to be water or a 1-4 carbon al-cohol. The process does not yield particles of silicon nitride uniformly coated with a sintering aid oxide because after addi-tion of the metal nitrate to the silicon nitride particles the powder must be dried and pulverized before baking to convert to an oxide. The intermediate pulverization step means that many fresh silicon nitride surfaces are produced which can not pos-sibly have any sintering aid thereon. Although water is sug-gested as a possible solvent there is no disclosure in the ab-stract of any step being taken to prevent or even deter the de-gradation of the silicon nitride that must occur by reaction with the water. Also no steps are taken to prevent the forma-on of individual particles of sintering aid oxide which aress efficient than a coating in promoting densification.
Japanese Publn. 61-281,069 mixes silicon carbide and sili-con nitride powders in a solution containing a metal alkoxide and then calcines the mixture until the aIkoxide is hydroliz-ed. The result is predominantly a mixture of particles of sil-icon carbide, silicon nitride, and metallic oxide, with a small amount of metal oxide particles formed on the surfaces of the carbide and nitride powders.
Japanese Publn. 61-251,578 forms an alcoholic solution of ~ etal alkoxide and uses that solution in place of a metal ox-~ ~ powder as a sintering aid source for silicon nitride. The r~ult is a mere blend of silicon nitride and metal oxide parti-cles with a slight amount of the metal oxide possibly adhering to some of the silicon nitride particles, but not completely coating them.
T.M. Shaw and B.A. Pethica in "Preparation and Sintering of Homogeneous Silicon Nitride Green Compacts", 69 Journal of ~he American Ceramic Society 88-93 ~1986) teach a means to ob-tain a more uniform di~tribution of sintering aid than by con-ventional milling. Specifically, they teach the precipitation - !
of yttrium, magnesium, and/or aluminum hydroxides by adding so-lutions of the corresponding metal nitrates to a suspension of silicon nitride powder in water which also contains tetraethyl-ammonium hydroxide in sufficient quantity to cause precipita-tion of the metal hydoxide from the dispersion medium. The pre-cipitate and the suspended silicon nitride particles, some of which may be partially coated with the precipitate, are jointly flocculated to produce a well-mixed powder of silicon nitride and densification aiding metal hydroxides. Such mixtures were found to sinter to higher final densities under the same sinter-ing conditions than mixtures of the same chemical composition formed by conventional joint milling of constituents initially introduced into the suspension in powder form.
The general preparation of solid materials in finely di-vided ~orm is a frequent practical need. Generally the process ~f comminuting solids is most effectively accomplished while the solids are suspended in a fluid that lubricates the flow of the particles as they interact with the milling balls, knives, or the liXe that are used to accomplish the actual division of the relatively large solid particles into smaller ones. The di-vision of solid particles into smaller ones necessarily produc-es new solid surfaces and therefore promotes chemical reaction ~etween the new surfaces and constituents of the environment in ich the surfaces are formed. At times, these reactions are leterious to the properties desired in the fine solid materi-~ij being prepared and/or generate explosive levels of gases, so that preventing such reactions would be advantageous.
One of the well-known examples of a deleterious reaction between a suspension medium and a solid material being comminut-ed is silicon nitride and water since the silicon nitride readi-ly reacts with water leaving a substantial coating of silica on the silicon nitride surface. It is known that in the presence of water silicon nitride undergoes the reaction:
Si3N4 + 6 H20 = 3 SiO2 + 4 NH3 - . . . ..
.
And in the presence of water, silicon carbide undergoes the reaction:
SiC + 2 H20 = SiO2 + CH4 which again results in the presence of substantial amounts of silica on the particle surfaces. The silica in each case can reduce the usefulness of the particles particularly at high tem-peratures. Also the water can generate dangerous amounts of am-monia or methane. Based upon these problems, milling of sili-con nitride and silicon carbide in water, while having been at-t-1mpted, has previously generally been avoided. Also, milling water has been ~ound to cause extreme morphological changes the powder by forming extensive hard agglomerates which have ~eded densification and adversely affected the mechanical pro--ties of the resultant dense body. As a result, conventional _tice in the art is to mill silicon nitride or silicon car-e in an organic solvent, such as isopropanol, to produce the ~e~y fine powders used for making shaped articles having desir-able physical properties, particularly at high temperatures.
Alcohol is more expensive and more hazardous, due to its poten-tial for fires and explosions, than water. Also it is becoming more difficult to dispose of due to environmental considera-tions. It would be clearly more advantageous to use water as the milling mediium.
Although the presence of small amounts, i.e. less than ;i~out 2%, of silica in silicon nitride is normally not detrimen-~ l, larger amounts are generally undesirable in the intergran-i~lar phase of silicon nitride articles intended for service at high temperatures. In addition, some densifying aid oxide is needed to permit adequate densification under known practical temperatures and pressures. ~he most preferred densification aid at present iB yttria, with magnesia an alternative for low-er temperature uses, and mixture~ of these constituents with each other, with a small amount of silica, or with other metal oxides being known in the art. Conventionally, oxide sintering aids have been milled together with the silicon nitride or sil-!
icon carbide powders in alcohol. While this has produced ade-quate results for many applications, it is generally believed that a more uniform distribution of sintering aid than can now be achieved by conventional milling in alcohol is desirable to permit a reduction in the total amount of sintering aid needed.
SUMMARY OF THE INVENTION
It has now been found that solid materials can be milled in a liquid with which the materials are reacti~e, while actual reaction with the liquid is minimized or prevented by the pre-sence of a sufficient amount of a surfactant in the liquid. It is believed that the surfactant covers, and may even chemically react with, freshly produced solid surfaces before reaction can ccur with the liquid dispersion medium. In particular, ceram-~, particularly nitride and carbide ceramics, and most partic-~ ~rly silicon nitride and silicon carbide, can be milled in wa-ter in the presence of suitable surfactant materials to produce a readily densifiable powder without an undesirably high silica content and without causing any substantial agglomeration. Fur-thermore, suspensions prepared by this process can be filtered through filters with average openings at least as small as two microns with less than about 2% loss of ceramic powder content hCih ha~ not usually been possible with slurries prepared by nventional means since a non-uniform amount of ceramic and atering aid particle~ would be removed.
The ability of being able to place the ceramic powders in water, without causing a deleterious reaction, in combination with control of the surface chemistry enables a more effective and economical mixing of sintering aids with the ceramic parti-cles which results in surface precipitation of a densification ~d, or more usually a precursor of it, onto the surfaces of the suspended ceramic particles, without simultaneously precipi-tating any of the sintering aid or its precursor in the bulk of the suspension medium. The resultant ceramic particles are es-sentially completely coated with the sintering aid or its pre-2~)~6338 -- 8 --cursor in the substantial absence of free sintering aid or pre-cursor particles. Specifically, a metal hydroxide that will readily convert to a densification-aiding metal oxide is con-trollably precipitated onto the surfaces of suspended nitride or carbide particles while avoiding simultaneous precipitation of hydroxide particles in the bulk. Thus, a desirable inter-granular phase constituent, such as yttria, is distributed over the nitride or carbide powder surfaces with exceptional uniform-ity, thereby reducing the total amount of sintering aid requir-ed for densification. Moreover, the process is particularly ad-vantageous when two or more sintering aids are used simultane-ously, since they can be deposited either simultaneously or, more preferrably, sequentially thereby providing additional con-trol of the subsequent densification.
~IEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a scanning transmission electronmicrograph of ~ licon nitride particles which have been milled in water con-taining 2% Cavco Mod APG surfactant.
Figure 2 is a scanning transmission electronmicrograph of the particles of Figure 1 wherein 4% yttria has been surface ^ecipitated thereon.
Figure 3 is a scanning transmission electronmicrograph of conventionally prepared mixture of silicon nitride particles which have been milled in isopropanol with yttria present.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention is applicable to nitride and ca-rbide ceramic powders which are reduced in size to form very ~ine powders which are then used to produce useful articles.
More particularly it is applicable to ceramic powders which un-dergo a liquid phase densification. Examples of suitable such nitride and carbide powders include, but are not limited to, silicon nitride, aluminum nitride, boron nitride, titanium - . - -- - . -.. .. ... . ... ...................
I
~:~13G338 _ g _ nitride, silicon carbide, boron carbide, and titanium carbide.
To prepare the nitride and carbide ceramic particles hav-ing a surface precipitated coating of sintering aid oxide in the substantial absence of free sintering aid particles, (i) the ceramic material is comminuted, preferably in water, to a desired fine particle size, (ii) a metal salt which will gener-ate metal ions of the desired sintering aid is added to the cer-amic particles in the form of an aqueous solution, generally af-ter the comminution, (iii) the metal ions combine with hydroxyl ions and a metal hydroxide precursor to the desired oxide is rface-precipitated onto the ceramic particles from the aque-~s solutions under conditions which preclude the precipitation e the precursor in the bulk, and finally (iv) the precursor is onverted to the desired final oxide.
The comminution (milling) of the nitride or carbide parti-cles to the desired fine particle size may be performed in a conventional manner in the presence of an alcoholic solvent, such as isopropanol, and then dried to remove the solvent. In this case the inherent oxide surface that forms upon exposure to air should be removed by acid washing to improve surfactant adhesion. Preferably, however, the milling is performed in the ~esence of water and a surfactant which is more reactive with tride or carbide than is the water so that the ceramic materi-i~ protected from attack by the water and thus reaction with ~he water is prevented. Suitable surfactants useful herein in-clude amino-functional zircoaluminate surfactants having an in-organic polymer backbone ~from Cavedon Chemical, now Manchem), silanes, titanium alkoxides, aluminum alkoxides, zirconium al-koxides, iridium-based surfactants, and the like. Of course, the selected surfactant must not detrimentally effect the per-formance of the ceramic material in its intended u~e. In addi-tion, the surfactant must not generate any substantial amount of foam which could deleteriously effect the comminuting opera-tion. Preferably, it is an organofunctional zircoaluminate.
X~6338 More preferably the organofunctional groups are selected from amino, mercapto, carboxy, and oleophilic groups. Still more preferably, the zircoaluminate surfactant i8 the reaction pro-duct of a chelated aluminum moiety, an organofunctional ligand, and a zirconium oxyhalide, the organofunctional ligand being complexed with and chemically bound to the chelated aluminum moiety, the aluminum moiety having the formula A12(0RlO)aAbBc, wherein each of A and B is hydroxy or halide and each of a, b, and c are integers such that 2a + b +
c = 6, and ORlo is (a) an alpha, beta or an alpha, gamma glycol group in which R1 is an alkyl group having about 1 to about 6 carbon atoms or (b) an alpha-hydroxy carboxylic acid r~;idue having the formula:
--o---CH---C---O--~ rein R3 is H or an alkyl group having about 1 to about 4 carbon atoms; said organofunctional ligand being (a) an alkyl, alkenyl, alkynl, or aralkyl carboxylic acid having about 2 to about 36 carbon atoms, (b) an aminofunctional carboxylic acid having about 2 to about 18 carbon.atoms, (c) a dibasic carboxyl-ic acid having about 2 to about 18 carbon atoms, (d) an acid anhydride o~ a dibasic acid having about 2 to about 18 carbon :oms, (e) a mercapto functional carboxylic acid having about 2 about 18 carbon atoms, or (f) an epoxy functional carboxylic :id having about 2 to about 18 carbon atoms; said zirconium ~yhalide moiety having the formula ZrAdBe, wherein A and B
;;.~e as above defined and d and e are integers such that d + e =
4; the molar ratio of chelated aluminum moiety to zirconium oxy-halide moiety being about 1.5 to about 10; and the molar ratio of organofunctional ligand to total metal being about 0.05 to about 2.
Generally the sur~actants useful herein are those surface .~tive agents which are sufficiently attracted to the nitride or carbide particles to react therewith more rapidly than can water. The sur~actant serves to prevent, or at least substan-Z~ G338 tially retard, reaction of the nitride or carbide with waterwhile simultaneously not generating an excessive amount of foam which would interfere with the milling process. The surfactant is normally used in an amount of about 0.5 to about 10, prefer-ably about 1 to a~out 5, weight % based on the water. The mill-ing is normally conducted for an extended period of at least about 10 hours, though the time has not been found critical pro-vided that the desired particle size is achieved. The water milling in the presence of the surfactant has been found to sub-stantially increase the milling efficiency such that the total milling time required to produce a particular average size par-ticle has been found to be reduced by 50 to 70 % or more.
The comminution of the relatively large nitride or car-de particles to the desired particle size may be performed inconventional mill or other particle comminution device that ~ rates on the principle of suspending solid particles in a liguid medium. Examples of suitable such devices include vibra-tory, ball, and attritor mills, and the like.
The sintering/densification aids added to the nitride or carbide include those conventional oxides which are known to be useful for densifying the ceramic material involved. Examples c euitable oxides include those of rare earth metals such as :rium, as well as magnesium, zirconium, aluminum, cerium, haf-~m, and mixtures thereof. Preferably the sintering aid is lected from yttria, magnesia, and mixtures thereof. Most pre-~erably the sintering aid is yttria. Precursor hydroxides of these sintering aids which can be surface-precipitated in accor-dance with this invention are prepared in situ from metal salts which produce metal ions when placed in water. Salts which can generate the desired metal hydroxide precursors include yttrium nitrate, yttrium chloride, yttrium acetate, magnesium nitrate, magnesium bromide, magnesium acetate, and mixtures thereof.
Most preferably the salt used is the nitrate of the particular metal because the product of neutralization, ammonium nitrate, . ~ . .. .. . ... . ... ..... .. . ... . .. .
is readily decomposable at low temperatures with no deleterious effect on the ceramic products. The amount of sintering aid used will depend upon its particular efficiency and the use to which the final body will be put, but generally an amount of about 0.5 to about 10 % by weight of the ceramic material will be appropriate. Preferably, the amount of sintering aid will be as low as possible, particularly for high temperature appli-cations.
For silicon nitride the amount of sintering aid can be l-~ss than about 2%, since silicon nitride bodies prepared with little as 0.7 weight % yttria in accordance with the present vention have shown essentially equivalent performance to con-ntionally prepared bodies having 4% yttria. Most preferably, sintering aid is yttria which is used in an amount of about ; to about 1.2 weight %.
To deposit the sintering aid precursor hydroxide on the surfaces of the nitride or carbide particles which have been previously milled, i.e. in alcohol, and dried, the milled par-ticles can be slurried in water which contains the surfactants described above, in substantially similar amounts, along with the necessary metal salt. To deposit the sintering aid precur-~or hydroxide in the preferred case where the milling operation per~ormed in water, the desired metal salt may simply be add-to the mill after the milling is completed and, preferably, ~er the milled suspension has been filtered to remove any ni-iide or carbide particles larger than about 2 microns. Theslurry may also contain an alcohol in up to about 50% of the weight of the water. The deposition of the sintering aid pre-cursor hydroxide upon the milled particles by surface precipi-tation is then performed by addinq the desired metal salt and then slowly increasing the pH of the solution by the addition of a base such as aqueous ammonia. The deposition conditions i~re selected to preclude any bulk precipitation of the sinter-ing aid hydroxide precursor so that the final composition is 20~:116338 substantially free Gf independent sintering aid oxide parti-cles. To achieve this, advantage i8 taken of the ~act that the pH of the surface of the nitride or carbide particle, pH(s), is related to the pH of the bulk solution, pH(b), as follows:
pH(s) = pH~b) ~ ~e ~y/2.3kT
wherein ~ e is the electronic charge of the metal, ~ y is the surface potential of the particle suspension, k is the Boltz-mann constant, and T is the absolute temperature (J.T.Davies et al., Interfacial Phenomena, Academic Press, p 9S, 1963). The pH(s) is the same as pH(b) only when ~ y is zero. There is gen-erally a 2-3 pH unit difference between pH(s) and pH(b) in sta-ble suspensions. To assure that only surface precipitation of the sintering aid precursor occurs, the pH of the entire system controlled to be at least about 1.5, preferably at least ;out 2, and most preferably at least about 2.5 pH units below ,e hydrolysis constant of the specific metal ion until almost Lll, i.e. at least about 90 percent, of the metal has been con-sumed in the surface precipitation. Thereafter, the pH can be increased to slightly below the hydrolysis constant to assure that all of the metal is precipitated onto the nitride or car-bide surfaces and that essentially none of it is precipitated in the bulk.
If two or more sintering aids are desired for a particu-lar ceramic material, they may be deposited from a single solu-~ion containing metal ions of each. More preferably, the sin-ring aids will be deposited in a sequential manner, thereby~t~oviding an additional means of controlling the interaction of the materials to obtain optimum densification results and physi-cal properties of the resultant ceramic body.
The precursor hydroxide coating may be converted to the de~ired oxide by simply heating the particles. Generally this will be performed at temperatures generally greater than about 20-C. and under conditions which will not cause degradation of the nitride or carbide. Thus the maximum temperature may be as .. ~ .
. .
high as conventional sintering temperatures if the conversion is performed in an inert atmosphere, but normally only up to about 250-C. when performed in the presence of oxygen to mini-mize any reaction with oxygen. Preferably, the conversion is performed by placing the material in a vacuum oven at about 180 C. It should be noted that these temperatures are substantial-ly below those at which the corresponding bulk hydroxides con-vert to oxides. For instance, bulk yttrium hydroxide converts to yttrium oxide at a temperature of about 350-540-C. (M.D. Ras-mussen et al, Ceramics International, 11:51, 1985) and bulk zir-oonium hydroxide converts to zirconia at a temperature of about 730-430-C. (Taichi Sato, Thermochemica Acta, 34:211, 1979) The nitride or carbide particles having a coating of sin-ring aid or precursor may also be used directly for slip cast-lrS~ or shape forming procedures without drying or they may be dried in any conventional manner. Freeze-drying has been found to be particularly advantageous since it minimizes particle ag-gregation. Thereafter the sintering aid coated particles may be used in the same manner as previous ceramic material/sinter-ing aid mixtures, i.e. conventional forming procedures such as cold pressing, hot pressing, gas pressure sintering, hot isosta-~c pressing, and the like may be used. Further details on sin-~ring procedures are not included herein as they readily existthe open literature.
The resultant nitride or carbide particles have surfaces which consist essentially of the sintering aid oxide or its hy-droxide precursor. For instance, silicon nitride particles coated with about 0.7 weight % yttria produced a coating about 2 angstroms thick (about a monolayer). When the yttria amount was increased to about 1~, the layer was about 2-3 angstroms;
en the yttria amount was 2%, the coating was about 6-7 ang-~roms (about two monolayers). The silicon nitride particles are believed to be uniformly coated even at the very low levels of sintering aid, but no direct means for confirming this is currently available. As shown in the examples below, the pre-sence of a uniform coating is supported by relative acoustophor-etic mobility techniques (RAM) and by electron spectroscopy ~or chemical analysis (ESCA), scanning transmission electron micros-copy (STEM), and most importantly by the successful preparation of densified silicon nitride bodies from coated particles hav-ing less yttria than is required for conventionally prepared particle mixtures.
The coated nitride or carbide particles produced are in the substantial absence of any free sintering aid particles.
It is believed that no free sintering aid particles are produc-by the surface precipitation process of the invention since e were detectable by examination of scanning transmission ctronmicrographs of the products. However, this does not clude the presence of trace amounts of some free sintering particles.
Also, while it is expected that the coated particles will be used in this condition, i.e. in the substantial absence of free sintering aid particles, since this is considered the most efficient way to utilize the sintering aid, it is also within the scope of the present invention to intentionally add free n~rticles of one or more sintering aids to the sintering aid-ated particles. While this would partially defeat the pur-ise and some of the benefits of the surface precipitation pro-oess, it will not prevent the use of the sintering aid oxide-coated ceramic particles in many applications.
~ he surface precipitation process also avoids any contami-nation problem which could occur when dealing with fine parti-ole5 of different sintering aids. Since no particles of sinter-l,-,g aid oxides are milled to an ultrafine particle ~ize, dedi-cated equipment for each particular sintering aid is avoided.
While one aspect of the present invention is to form sin-, .. .. . . . . . ..... , . .. ~ _ .. _ ,.. ... .. ..
- - ., ~6338 tering aid-coated nitride and carbide particles in the substan-tial absence of free sintering aid particles, the process of preparing suspensions of finely divided particles of solid ma-terials when the finely divided materials will undergo a dele-terious reaction with the suspension medium is of more general application. It has been found that reactions between a fluid, i.e. water, and a freshly prepared finely divided particle may be precluded by the addition of surfactants which are soluble in the fluid and which protect the finely divided particles from attack by the fluid. Examples of materials which may be -otected include silicon nitride, silicon carbide, boron ni-~ide, aluminum nitride, and other carbides and nitrides. Thus en fine particles of these and other materials are requiredthe absence of any sintering aid coatings, the~ may readily prepared by comminuting larger particles thereof in water in t~e presence of the surfactants in the manner described above.
The best mode known for using this invention involves com-minution of materials comprising either silicon nitride or sili-con carbide in water to prepare powders upon which a sintering aid precursor hydroxide is surface precipitated so that the re-~sltant powders are useful for molding and eventual densifica-tlon to near-theoretical density.
The practice of the invention may be further understood from the following non-limiting examples in which all parts and percents are by weight unless otherwise specified.
Exam~les 1-6 and Comparative Examples C-l - C-9 These examples and comparative examples demonstrate the comminution of ~ilicon nitride particles in water which would normally be expected to attack the surfaces of the silicon ni--ide and convert them to silica. For each of these examples, ~50 g of silicon nitride powder and 7SO g of dispersion medium were milled together with 3 kg of dense silicon nitride-yttria milling media in a vibratory mill (Sweco mill). Each such lot was milled for about 18-20 hours. The aurface areas of the pow-ders were determined before and after milling by conventional BET adsorption using nitrogen gas. The dispersion media used are shown in Table 1. In Table 1, nKem" for the type of sili-con nitride means KemaNord SICONIDE grade P 95 C, available from Superior Graphite Co., Chicago, Illinois; "Ube SN-E 10" in-dicates a grade so designated by the manufacturer, Ube Indus-tries, ~td., Tokyo, Japan for a substantially equiaxed, high purity silicon nitride powder made by a liquid-interfacial reac-tion method and having > 95% alpha phase and a surface area of about 10 square meters per gram; "Ube SN-E 05~ and "Ube SN-E
02" are the same as Ube SN-E 10 except for having larger parti-cles, giving them a specific surface areas of about 5 and 2 m2/g respectively; "Ube B" is a mixture of 40% Ube SN-E 10 and 60% Ube SN-E 05; and "Ube T" is a mixture of 20% Ube SN-E
10, 30~ Ube SN-E 05, and 50 % Ube SN-E 02; "Nor" is Type HN-63 silicon nitride from Norton Company, Worcester, MA. Each of the silicon nitrides is generally at least about 95% silicon nitride.
"Cavco Mod APG" is an amino-functional zirocoaluminate surfactant having an inorganic polymer backbone, dissolved in ~pylene glycol, available from Cavedon Chemical Co., Inc., ,nsocket, R.I. Its total metal content is about 4.1 to 4.4 %, .h the surface active component being about 20 % of the to-. The synthesis and chemical structure of Cavco Mod APG are: forth in U.S. Pat. No. 4,539,049, particularly in columns 2-~ thereof, and more particularly in lines 21-23 and lines 47-52 of column 3 thereof, the subject matter of which is hereby incorporated by reference. "Coco" is an abbreviation for a mix-ture of coco alkylamine acetates, Chemical Abstracts Registry No. 61730-57-6, available from Armak Chemicals, Chicago, IL.
~. - -- , ~ .. .. .. . .. ... . .
2~ 6338 lable 1 Dispersion Media and Type of Silicon Nitride Used for Examples 1-6 and Comparative Examples Cl-Cg Desig- Silicon Dispersion Medium nation Nitride Used C-l Nor Deionized water, pH 7.0 C-2 Nor Deionized water adjusted to pH 4.0 with nitric acid C-3 Nor Deionized water adjusted to pH 11.0 with ammonia C-4 Nor Isopropyl alcohol (commercial grade) C-5 Kem 25 volume % IPA in deionized water C-6 Ube B Isopropyl alcohol C-7 Kem Deionized water, pH 7.0 C-8 Kem Deionized water adjusted to pH 4.0 with nitric acid C-9 Kem Deionized water adjusted to pH 11.0 with ammonia 1 Ube B Deionized water ~ 1% Cavco Mod APG
2 Ube B Deionized water + 2% Cavco Mod APG
UNIFORMLY-COATED CERAMIC PARTICLES
PARAM H. TEWARI
40 Marlboro Road Hudson, MA 01749 TECHNICAL FIELD
This invention relates to ceramic particles, especially silicon nitride or silicon carbide particles, having a substan-tially uniform coating thereon of one or more conventional ox-M 3 sintering aids, e.g. yttria, or a precursor thereto, in theastantial absence of any individual sintering aid oxide parti-3S. Due to a uniform coating of sintering aid on each ceram-~ nitride or carbide particle, the total amount of sintering aid required to produce a sintered body having excellent high temperature properties may be reduced substantially below the amounts now conventionally used. The invention also relates to a method of preparing such sintering aid-coated particles in the substantial absence of any free sintering aid particles by means of a surface precipitation of a precursor to the sinter-1~ aid upon the ceramic particles.
The invention further relates to the general comminution ~ one material in the presence of another material which is kr~own to deleteriously interact with the freshly formed sur-faces of the material being comminuted. More particularly, it relates to the comminution of ceramic particles, especially sil-icon nitride or silicon carbide particles, in water by a pro-cess which precludes deleterious reactions between the water ~nd the ceramic particles. The aqueous comminution process al-~o permit~ the incorporation of additional aomponents, e.g. sin-tering aids, onto the freshly formed ceramic particle surfaces.
. .
X~6338 TECHNICAL BACKGROUND
Traditionally, sintering aid addition to ceramic materi-als which undergo a liquid phase densification is performed by simply milling a solid sintering aid powder with the ceramic material in the presence of an alcoholic solvent, normally iso-propanol. The milling serves both to comminute the ceramic par-ticles to a smaller and more uniform particle size and to dis-tribute particles of the sintering aid somewhat uniformly among the ceramic particles. The result is a simple mixture of dif-ferent particles which inherently means that some portions of the mixture will be richer in sintering aid particles while oth-e~ portions will be poorer in them. This variation in sinter-aid concentration is believed to be a cause for failure of~e ceramic parts, particularly at elevated temperatures. In lition, due to the inherent non-uniformity the total amount of sintering aid needed to produce dense bodies from the ceram-iC5 is quite high. This is generally undesirable, especially for high temperature performance, because it can result in the presence of an excessive amount of glassy phase. There is need for ceramic material/sintering aid compositions which contain a lower than conventional amount of sintering aid, but have the ~intering aid distributed more uniformly so that the resultant densified bodies exhibit desirable high temperature properties.
This is particularly true for silicon nitride compositions.
Furthermore, the comminution of ceramic materials such as silicon nitride and silicon carbide being performed in conven-tional alcoholic solvents is both expensive and hazardous. The ability to perform the comminution in water without causing de-gradation of the ceramic material or generation of explosive levels of gases would be highly desirable. The present inven-tion evolved ~rom seeking a solution to each of these problems and a recognition that they are interrelated.
Previous attempts to resolve these problems has been di-rected at solving each individually, rather than simultaneous-,.. . ; .- . .. .. ~
. - ' i , 20~6338 ly. U.S. Pat. No. 3,830,652 (Gazza) claims a densifiable sili-con nitride composition containing an yttrium compound wherein the weight of yttrium in the yttrium compound is about 1.0 to 3.5 weight percent of the weight of the silicon nitride. This simple approach of merely using lower than normal amounts of yt-tria sintering aid would be wonderful, except that, as shown by comparative example below, it has not been found to produce sil-icon nitride bodies having sufficient high temperature proper-ties to be commercially useful. As a result, currently produc-ed silicon nitride bodies generally contain a minimum of about 4% by weight yttria to have sufficient high temperature proper-ties to be commercially useful.
Another attempt at reducing the amount of sintering aid is disclosed in Japanese Publn. 62-265,171 which teaches sinter-ing a silicon nitride material with a sintering aid which has been prepared by spraying aqueous metal salts in a solvent into a plasma flame. A reduced sintering aid usage is alleged, but only a simple mixture of silicon nitride particles and sinter-ing aid oxide particles is produced.
A further method of adding a sintering aid is shown in Ja-panese Publn. 62-187,170 in which a mixture of silicon nitride ~articles and silicon carbide whiskers is impregnated with a lvent-based solution of yttrium hydroxide or alkoxide and ~aen the impregnated hydroxide or alkoxide is transformed to an oxide. The process is similar to that of Shaw et al., discuss-ed below, and produces a substantial amount of yttrium oxide particles intimately blended with silicon nitride particles and silicon carbide whiskers as well as a small amount of the ni-tride and carbide having a partial yttria coating.
A still further attempt is disclosed in Japanese Publn.
62-158,166 in which silicon nitride powder is mixed with a so-lution containing a metal nitrate, the solvent simply evaporat-ed, and the mixture dried and baked to convert the nitrate to an oxide. The solvent is stated to be water or a 1-4 carbon al-cohol. The process does not yield particles of silicon nitride uniformly coated with a sintering aid oxide because after addi-tion of the metal nitrate to the silicon nitride particles the powder must be dried and pulverized before baking to convert to an oxide. The intermediate pulverization step means that many fresh silicon nitride surfaces are produced which can not pos-sibly have any sintering aid thereon. Although water is sug-gested as a possible solvent there is no disclosure in the ab-stract of any step being taken to prevent or even deter the de-gradation of the silicon nitride that must occur by reaction with the water. Also no steps are taken to prevent the forma-on of individual particles of sintering aid oxide which aress efficient than a coating in promoting densification.
Japanese Publn. 61-281,069 mixes silicon carbide and sili-con nitride powders in a solution containing a metal alkoxide and then calcines the mixture until the aIkoxide is hydroliz-ed. The result is predominantly a mixture of particles of sil-icon carbide, silicon nitride, and metallic oxide, with a small amount of metal oxide particles formed on the surfaces of the carbide and nitride powders.
Japanese Publn. 61-251,578 forms an alcoholic solution of ~ etal alkoxide and uses that solution in place of a metal ox-~ ~ powder as a sintering aid source for silicon nitride. The r~ult is a mere blend of silicon nitride and metal oxide parti-cles with a slight amount of the metal oxide possibly adhering to some of the silicon nitride particles, but not completely coating them.
T.M. Shaw and B.A. Pethica in "Preparation and Sintering of Homogeneous Silicon Nitride Green Compacts", 69 Journal of ~he American Ceramic Society 88-93 ~1986) teach a means to ob-tain a more uniform di~tribution of sintering aid than by con-ventional milling. Specifically, they teach the precipitation - !
of yttrium, magnesium, and/or aluminum hydroxides by adding so-lutions of the corresponding metal nitrates to a suspension of silicon nitride powder in water which also contains tetraethyl-ammonium hydroxide in sufficient quantity to cause precipita-tion of the metal hydoxide from the dispersion medium. The pre-cipitate and the suspended silicon nitride particles, some of which may be partially coated with the precipitate, are jointly flocculated to produce a well-mixed powder of silicon nitride and densification aiding metal hydroxides. Such mixtures were found to sinter to higher final densities under the same sinter-ing conditions than mixtures of the same chemical composition formed by conventional joint milling of constituents initially introduced into the suspension in powder form.
The general preparation of solid materials in finely di-vided ~orm is a frequent practical need. Generally the process ~f comminuting solids is most effectively accomplished while the solids are suspended in a fluid that lubricates the flow of the particles as they interact with the milling balls, knives, or the liXe that are used to accomplish the actual division of the relatively large solid particles into smaller ones. The di-vision of solid particles into smaller ones necessarily produc-es new solid surfaces and therefore promotes chemical reaction ~etween the new surfaces and constituents of the environment in ich the surfaces are formed. At times, these reactions are leterious to the properties desired in the fine solid materi-~ij being prepared and/or generate explosive levels of gases, so that preventing such reactions would be advantageous.
One of the well-known examples of a deleterious reaction between a suspension medium and a solid material being comminut-ed is silicon nitride and water since the silicon nitride readi-ly reacts with water leaving a substantial coating of silica on the silicon nitride surface. It is known that in the presence of water silicon nitride undergoes the reaction:
Si3N4 + 6 H20 = 3 SiO2 + 4 NH3 - . . . ..
.
And in the presence of water, silicon carbide undergoes the reaction:
SiC + 2 H20 = SiO2 + CH4 which again results in the presence of substantial amounts of silica on the particle surfaces. The silica in each case can reduce the usefulness of the particles particularly at high tem-peratures. Also the water can generate dangerous amounts of am-monia or methane. Based upon these problems, milling of sili-con nitride and silicon carbide in water, while having been at-t-1mpted, has previously generally been avoided. Also, milling water has been ~ound to cause extreme morphological changes the powder by forming extensive hard agglomerates which have ~eded densification and adversely affected the mechanical pro--ties of the resultant dense body. As a result, conventional _tice in the art is to mill silicon nitride or silicon car-e in an organic solvent, such as isopropanol, to produce the ~e~y fine powders used for making shaped articles having desir-able physical properties, particularly at high temperatures.
Alcohol is more expensive and more hazardous, due to its poten-tial for fires and explosions, than water. Also it is becoming more difficult to dispose of due to environmental considera-tions. It would be clearly more advantageous to use water as the milling mediium.
Although the presence of small amounts, i.e. less than ;i~out 2%, of silica in silicon nitride is normally not detrimen-~ l, larger amounts are generally undesirable in the intergran-i~lar phase of silicon nitride articles intended for service at high temperatures. In addition, some densifying aid oxide is needed to permit adequate densification under known practical temperatures and pressures. ~he most preferred densification aid at present iB yttria, with magnesia an alternative for low-er temperature uses, and mixture~ of these constituents with each other, with a small amount of silica, or with other metal oxides being known in the art. Conventionally, oxide sintering aids have been milled together with the silicon nitride or sil-!
icon carbide powders in alcohol. While this has produced ade-quate results for many applications, it is generally believed that a more uniform distribution of sintering aid than can now be achieved by conventional milling in alcohol is desirable to permit a reduction in the total amount of sintering aid needed.
SUMMARY OF THE INVENTION
It has now been found that solid materials can be milled in a liquid with which the materials are reacti~e, while actual reaction with the liquid is minimized or prevented by the pre-sence of a sufficient amount of a surfactant in the liquid. It is believed that the surfactant covers, and may even chemically react with, freshly produced solid surfaces before reaction can ccur with the liquid dispersion medium. In particular, ceram-~, particularly nitride and carbide ceramics, and most partic-~ ~rly silicon nitride and silicon carbide, can be milled in wa-ter in the presence of suitable surfactant materials to produce a readily densifiable powder without an undesirably high silica content and without causing any substantial agglomeration. Fur-thermore, suspensions prepared by this process can be filtered through filters with average openings at least as small as two microns with less than about 2% loss of ceramic powder content hCih ha~ not usually been possible with slurries prepared by nventional means since a non-uniform amount of ceramic and atering aid particle~ would be removed.
The ability of being able to place the ceramic powders in water, without causing a deleterious reaction, in combination with control of the surface chemistry enables a more effective and economical mixing of sintering aids with the ceramic parti-cles which results in surface precipitation of a densification ~d, or more usually a precursor of it, onto the surfaces of the suspended ceramic particles, without simultaneously precipi-tating any of the sintering aid or its precursor in the bulk of the suspension medium. The resultant ceramic particles are es-sentially completely coated with the sintering aid or its pre-2~)~6338 -- 8 --cursor in the substantial absence of free sintering aid or pre-cursor particles. Specifically, a metal hydroxide that will readily convert to a densification-aiding metal oxide is con-trollably precipitated onto the surfaces of suspended nitride or carbide particles while avoiding simultaneous precipitation of hydroxide particles in the bulk. Thus, a desirable inter-granular phase constituent, such as yttria, is distributed over the nitride or carbide powder surfaces with exceptional uniform-ity, thereby reducing the total amount of sintering aid requir-ed for densification. Moreover, the process is particularly ad-vantageous when two or more sintering aids are used simultane-ously, since they can be deposited either simultaneously or, more preferrably, sequentially thereby providing additional con-trol of the subsequent densification.
~IEF DESCRIPTION OF THE DRAWINGS
Figure 1 is a scanning transmission electronmicrograph of ~ licon nitride particles which have been milled in water con-taining 2% Cavco Mod APG surfactant.
Figure 2 is a scanning transmission electronmicrograph of the particles of Figure 1 wherein 4% yttria has been surface ^ecipitated thereon.
Figure 3 is a scanning transmission electronmicrograph of conventionally prepared mixture of silicon nitride particles which have been milled in isopropanol with yttria present.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention is applicable to nitride and ca-rbide ceramic powders which are reduced in size to form very ~ine powders which are then used to produce useful articles.
More particularly it is applicable to ceramic powders which un-dergo a liquid phase densification. Examples of suitable such nitride and carbide powders include, but are not limited to, silicon nitride, aluminum nitride, boron nitride, titanium - . - -- - . -.. .. ... . ... ...................
I
~:~13G338 _ g _ nitride, silicon carbide, boron carbide, and titanium carbide.
To prepare the nitride and carbide ceramic particles hav-ing a surface precipitated coating of sintering aid oxide in the substantial absence of free sintering aid particles, (i) the ceramic material is comminuted, preferably in water, to a desired fine particle size, (ii) a metal salt which will gener-ate metal ions of the desired sintering aid is added to the cer-amic particles in the form of an aqueous solution, generally af-ter the comminution, (iii) the metal ions combine with hydroxyl ions and a metal hydroxide precursor to the desired oxide is rface-precipitated onto the ceramic particles from the aque-~s solutions under conditions which preclude the precipitation e the precursor in the bulk, and finally (iv) the precursor is onverted to the desired final oxide.
The comminution (milling) of the nitride or carbide parti-cles to the desired fine particle size may be performed in a conventional manner in the presence of an alcoholic solvent, such as isopropanol, and then dried to remove the solvent. In this case the inherent oxide surface that forms upon exposure to air should be removed by acid washing to improve surfactant adhesion. Preferably, however, the milling is performed in the ~esence of water and a surfactant which is more reactive with tride or carbide than is the water so that the ceramic materi-i~ protected from attack by the water and thus reaction with ~he water is prevented. Suitable surfactants useful herein in-clude amino-functional zircoaluminate surfactants having an in-organic polymer backbone ~from Cavedon Chemical, now Manchem), silanes, titanium alkoxides, aluminum alkoxides, zirconium al-koxides, iridium-based surfactants, and the like. Of course, the selected surfactant must not detrimentally effect the per-formance of the ceramic material in its intended u~e. In addi-tion, the surfactant must not generate any substantial amount of foam which could deleteriously effect the comminuting opera-tion. Preferably, it is an organofunctional zircoaluminate.
X~6338 More preferably the organofunctional groups are selected from amino, mercapto, carboxy, and oleophilic groups. Still more preferably, the zircoaluminate surfactant i8 the reaction pro-duct of a chelated aluminum moiety, an organofunctional ligand, and a zirconium oxyhalide, the organofunctional ligand being complexed with and chemically bound to the chelated aluminum moiety, the aluminum moiety having the formula A12(0RlO)aAbBc, wherein each of A and B is hydroxy or halide and each of a, b, and c are integers such that 2a + b +
c = 6, and ORlo is (a) an alpha, beta or an alpha, gamma glycol group in which R1 is an alkyl group having about 1 to about 6 carbon atoms or (b) an alpha-hydroxy carboxylic acid r~;idue having the formula:
--o---CH---C---O--~ rein R3 is H or an alkyl group having about 1 to about 4 carbon atoms; said organofunctional ligand being (a) an alkyl, alkenyl, alkynl, or aralkyl carboxylic acid having about 2 to about 36 carbon atoms, (b) an aminofunctional carboxylic acid having about 2 to about 18 carbon.atoms, (c) a dibasic carboxyl-ic acid having about 2 to about 18 carbon atoms, (d) an acid anhydride o~ a dibasic acid having about 2 to about 18 carbon :oms, (e) a mercapto functional carboxylic acid having about 2 about 18 carbon atoms, or (f) an epoxy functional carboxylic :id having about 2 to about 18 carbon atoms; said zirconium ~yhalide moiety having the formula ZrAdBe, wherein A and B
;;.~e as above defined and d and e are integers such that d + e =
4; the molar ratio of chelated aluminum moiety to zirconium oxy-halide moiety being about 1.5 to about 10; and the molar ratio of organofunctional ligand to total metal being about 0.05 to about 2.
Generally the sur~actants useful herein are those surface .~tive agents which are sufficiently attracted to the nitride or carbide particles to react therewith more rapidly than can water. The sur~actant serves to prevent, or at least substan-Z~ G338 tially retard, reaction of the nitride or carbide with waterwhile simultaneously not generating an excessive amount of foam which would interfere with the milling process. The surfactant is normally used in an amount of about 0.5 to about 10, prefer-ably about 1 to a~out 5, weight % based on the water. The mill-ing is normally conducted for an extended period of at least about 10 hours, though the time has not been found critical pro-vided that the desired particle size is achieved. The water milling in the presence of the surfactant has been found to sub-stantially increase the milling efficiency such that the total milling time required to produce a particular average size par-ticle has been found to be reduced by 50 to 70 % or more.
The comminution of the relatively large nitride or car-de particles to the desired particle size may be performed inconventional mill or other particle comminution device that ~ rates on the principle of suspending solid particles in a liguid medium. Examples of suitable such devices include vibra-tory, ball, and attritor mills, and the like.
The sintering/densification aids added to the nitride or carbide include those conventional oxides which are known to be useful for densifying the ceramic material involved. Examples c euitable oxides include those of rare earth metals such as :rium, as well as magnesium, zirconium, aluminum, cerium, haf-~m, and mixtures thereof. Preferably the sintering aid is lected from yttria, magnesia, and mixtures thereof. Most pre-~erably the sintering aid is yttria. Precursor hydroxides of these sintering aids which can be surface-precipitated in accor-dance with this invention are prepared in situ from metal salts which produce metal ions when placed in water. Salts which can generate the desired metal hydroxide precursors include yttrium nitrate, yttrium chloride, yttrium acetate, magnesium nitrate, magnesium bromide, magnesium acetate, and mixtures thereof.
Most preferably the salt used is the nitrate of the particular metal because the product of neutralization, ammonium nitrate, . ~ . .. .. . ... . ... ..... .. . ... . .. .
is readily decomposable at low temperatures with no deleterious effect on the ceramic products. The amount of sintering aid used will depend upon its particular efficiency and the use to which the final body will be put, but generally an amount of about 0.5 to about 10 % by weight of the ceramic material will be appropriate. Preferably, the amount of sintering aid will be as low as possible, particularly for high temperature appli-cations.
For silicon nitride the amount of sintering aid can be l-~ss than about 2%, since silicon nitride bodies prepared with little as 0.7 weight % yttria in accordance with the present vention have shown essentially equivalent performance to con-ntionally prepared bodies having 4% yttria. Most preferably, sintering aid is yttria which is used in an amount of about ; to about 1.2 weight %.
To deposit the sintering aid precursor hydroxide on the surfaces of the nitride or carbide particles which have been previously milled, i.e. in alcohol, and dried, the milled par-ticles can be slurried in water which contains the surfactants described above, in substantially similar amounts, along with the necessary metal salt. To deposit the sintering aid precur-~or hydroxide in the preferred case where the milling operation per~ormed in water, the desired metal salt may simply be add-to the mill after the milling is completed and, preferably, ~er the milled suspension has been filtered to remove any ni-iide or carbide particles larger than about 2 microns. Theslurry may also contain an alcohol in up to about 50% of the weight of the water. The deposition of the sintering aid pre-cursor hydroxide upon the milled particles by surface precipi-tation is then performed by addinq the desired metal salt and then slowly increasing the pH of the solution by the addition of a base such as aqueous ammonia. The deposition conditions i~re selected to preclude any bulk precipitation of the sinter-ing aid hydroxide precursor so that the final composition is 20~:116338 substantially free Gf independent sintering aid oxide parti-cles. To achieve this, advantage i8 taken of the ~act that the pH of the surface of the nitride or carbide particle, pH(s), is related to the pH of the bulk solution, pH(b), as follows:
pH(s) = pH~b) ~ ~e ~y/2.3kT
wherein ~ e is the electronic charge of the metal, ~ y is the surface potential of the particle suspension, k is the Boltz-mann constant, and T is the absolute temperature (J.T.Davies et al., Interfacial Phenomena, Academic Press, p 9S, 1963). The pH(s) is the same as pH(b) only when ~ y is zero. There is gen-erally a 2-3 pH unit difference between pH(s) and pH(b) in sta-ble suspensions. To assure that only surface precipitation of the sintering aid precursor occurs, the pH of the entire system controlled to be at least about 1.5, preferably at least ;out 2, and most preferably at least about 2.5 pH units below ,e hydrolysis constant of the specific metal ion until almost Lll, i.e. at least about 90 percent, of the metal has been con-sumed in the surface precipitation. Thereafter, the pH can be increased to slightly below the hydrolysis constant to assure that all of the metal is precipitated onto the nitride or car-bide surfaces and that essentially none of it is precipitated in the bulk.
If two or more sintering aids are desired for a particu-lar ceramic material, they may be deposited from a single solu-~ion containing metal ions of each. More preferably, the sin-ring aids will be deposited in a sequential manner, thereby~t~oviding an additional means of controlling the interaction of the materials to obtain optimum densification results and physi-cal properties of the resultant ceramic body.
The precursor hydroxide coating may be converted to the de~ired oxide by simply heating the particles. Generally this will be performed at temperatures generally greater than about 20-C. and under conditions which will not cause degradation of the nitride or carbide. Thus the maximum temperature may be as .. ~ .
. .
high as conventional sintering temperatures if the conversion is performed in an inert atmosphere, but normally only up to about 250-C. when performed in the presence of oxygen to mini-mize any reaction with oxygen. Preferably, the conversion is performed by placing the material in a vacuum oven at about 180 C. It should be noted that these temperatures are substantial-ly below those at which the corresponding bulk hydroxides con-vert to oxides. For instance, bulk yttrium hydroxide converts to yttrium oxide at a temperature of about 350-540-C. (M.D. Ras-mussen et al, Ceramics International, 11:51, 1985) and bulk zir-oonium hydroxide converts to zirconia at a temperature of about 730-430-C. (Taichi Sato, Thermochemica Acta, 34:211, 1979) The nitride or carbide particles having a coating of sin-ring aid or precursor may also be used directly for slip cast-lrS~ or shape forming procedures without drying or they may be dried in any conventional manner. Freeze-drying has been found to be particularly advantageous since it minimizes particle ag-gregation. Thereafter the sintering aid coated particles may be used in the same manner as previous ceramic material/sinter-ing aid mixtures, i.e. conventional forming procedures such as cold pressing, hot pressing, gas pressure sintering, hot isosta-~c pressing, and the like may be used. Further details on sin-~ring procedures are not included herein as they readily existthe open literature.
The resultant nitride or carbide particles have surfaces which consist essentially of the sintering aid oxide or its hy-droxide precursor. For instance, silicon nitride particles coated with about 0.7 weight % yttria produced a coating about 2 angstroms thick (about a monolayer). When the yttria amount was increased to about 1~, the layer was about 2-3 angstroms;
en the yttria amount was 2%, the coating was about 6-7 ang-~roms (about two monolayers). The silicon nitride particles are believed to be uniformly coated even at the very low levels of sintering aid, but no direct means for confirming this is currently available. As shown in the examples below, the pre-sence of a uniform coating is supported by relative acoustophor-etic mobility techniques (RAM) and by electron spectroscopy ~or chemical analysis (ESCA), scanning transmission electron micros-copy (STEM), and most importantly by the successful preparation of densified silicon nitride bodies from coated particles hav-ing less yttria than is required for conventionally prepared particle mixtures.
The coated nitride or carbide particles produced are in the substantial absence of any free sintering aid particles.
It is believed that no free sintering aid particles are produc-by the surface precipitation process of the invention since e were detectable by examination of scanning transmission ctronmicrographs of the products. However, this does not clude the presence of trace amounts of some free sintering particles.
Also, while it is expected that the coated particles will be used in this condition, i.e. in the substantial absence of free sintering aid particles, since this is considered the most efficient way to utilize the sintering aid, it is also within the scope of the present invention to intentionally add free n~rticles of one or more sintering aids to the sintering aid-ated particles. While this would partially defeat the pur-ise and some of the benefits of the surface precipitation pro-oess, it will not prevent the use of the sintering aid oxide-coated ceramic particles in many applications.
~ he surface precipitation process also avoids any contami-nation problem which could occur when dealing with fine parti-ole5 of different sintering aids. Since no particles of sinter-l,-,g aid oxides are milled to an ultrafine particle ~ize, dedi-cated equipment for each particular sintering aid is avoided.
While one aspect of the present invention is to form sin-, .. .. . . . . . ..... , . .. ~ _ .. _ ,.. ... .. ..
- - ., ~6338 tering aid-coated nitride and carbide particles in the substan-tial absence of free sintering aid particles, the process of preparing suspensions of finely divided particles of solid ma-terials when the finely divided materials will undergo a dele-terious reaction with the suspension medium is of more general application. It has been found that reactions between a fluid, i.e. water, and a freshly prepared finely divided particle may be precluded by the addition of surfactants which are soluble in the fluid and which protect the finely divided particles from attack by the fluid. Examples of materials which may be -otected include silicon nitride, silicon carbide, boron ni-~ide, aluminum nitride, and other carbides and nitrides. Thus en fine particles of these and other materials are requiredthe absence of any sintering aid coatings, the~ may readily prepared by comminuting larger particles thereof in water in t~e presence of the surfactants in the manner described above.
The best mode known for using this invention involves com-minution of materials comprising either silicon nitride or sili-con carbide in water to prepare powders upon which a sintering aid precursor hydroxide is surface precipitated so that the re-~sltant powders are useful for molding and eventual densifica-tlon to near-theoretical density.
The practice of the invention may be further understood from the following non-limiting examples in which all parts and percents are by weight unless otherwise specified.
Exam~les 1-6 and Comparative Examples C-l - C-9 These examples and comparative examples demonstrate the comminution of ~ilicon nitride particles in water which would normally be expected to attack the surfaces of the silicon ni--ide and convert them to silica. For each of these examples, ~50 g of silicon nitride powder and 7SO g of dispersion medium were milled together with 3 kg of dense silicon nitride-yttria milling media in a vibratory mill (Sweco mill). Each such lot was milled for about 18-20 hours. The aurface areas of the pow-ders were determined before and after milling by conventional BET adsorption using nitrogen gas. The dispersion media used are shown in Table 1. In Table 1, nKem" for the type of sili-con nitride means KemaNord SICONIDE grade P 95 C, available from Superior Graphite Co., Chicago, Illinois; "Ube SN-E 10" in-dicates a grade so designated by the manufacturer, Ube Indus-tries, ~td., Tokyo, Japan for a substantially equiaxed, high purity silicon nitride powder made by a liquid-interfacial reac-tion method and having > 95% alpha phase and a surface area of about 10 square meters per gram; "Ube SN-E 05~ and "Ube SN-E
02" are the same as Ube SN-E 10 except for having larger parti-cles, giving them a specific surface areas of about 5 and 2 m2/g respectively; "Ube B" is a mixture of 40% Ube SN-E 10 and 60% Ube SN-E 05; and "Ube T" is a mixture of 20% Ube SN-E
10, 30~ Ube SN-E 05, and 50 % Ube SN-E 02; "Nor" is Type HN-63 silicon nitride from Norton Company, Worcester, MA. Each of the silicon nitrides is generally at least about 95% silicon nitride.
"Cavco Mod APG" is an amino-functional zirocoaluminate surfactant having an inorganic polymer backbone, dissolved in ~pylene glycol, available from Cavedon Chemical Co., Inc., ,nsocket, R.I. Its total metal content is about 4.1 to 4.4 %, .h the surface active component being about 20 % of the to-. The synthesis and chemical structure of Cavco Mod APG are: forth in U.S. Pat. No. 4,539,049, particularly in columns 2-~ thereof, and more particularly in lines 21-23 and lines 47-52 of column 3 thereof, the subject matter of which is hereby incorporated by reference. "Coco" is an abbreviation for a mix-ture of coco alkylamine acetates, Chemical Abstracts Registry No. 61730-57-6, available from Armak Chemicals, Chicago, IL.
~. - -- , ~ .. .. .. . .. ... . .
2~ 6338 lable 1 Dispersion Media and Type of Silicon Nitride Used for Examples 1-6 and Comparative Examples Cl-Cg Desig- Silicon Dispersion Medium nation Nitride Used C-l Nor Deionized water, pH 7.0 C-2 Nor Deionized water adjusted to pH 4.0 with nitric acid C-3 Nor Deionized water adjusted to pH 11.0 with ammonia C-4 Nor Isopropyl alcohol (commercial grade) C-5 Kem 25 volume % IPA in deionized water C-6 Ube B Isopropyl alcohol C-7 Kem Deionized water, pH 7.0 C-8 Kem Deionized water adjusted to pH 4.0 with nitric acid C-9 Kem Deionized water adjusted to pH 11.0 with ammonia 1 Ube B Deionized water ~ 1% Cavco Mod APG
2 Ube B Deionized water + 2% Cavco Mod APG
3 Ube B Deionized water + 4% Cavco Mod APG
4 Kem Deionized water + 2% Cavco Mod APG
Ube T Deionized water + 2% Cavco Mod APG
6 Ube B Deionized water + 1% Coco The milling conditions were determined by having perform-ed a preliminary screening for attractive operating conditions which would minimiz~ the amount of ammonia generated during the milling. All of the comparative example~ except C-6, which re-pre~ents the currently established conventional art, generated substantial amounts of ammonia during milling. C-5, with some o~ the water replaced by isopropanol, produced less ammonia :~an the others but still did not make satisfactory powder in cvmparison with C-6.
, All of the Examples 1-6 generated less ammonia during the milling than did any of the comparative examples except C-4 or C-6. Examples 2, 4, and 5 all generated approximately equal amounts of ammonia durinq milling, smaller amounts of ammonia than the other examples, while Example 3, with more surfactant, generated more foam and was thus considered less desirable. It was therefore concluded that Cavco Mod APG at a level of about 2% was the best surfactant among these examples. Example 6 us-ing Coco at 1% did show evidence of foaming and also produced more ammonia (and thus silica) than the other Examples and thus _o is suggested for primary use for silicon nitrides which 11 not be subjected to extremely hiqh temperatures.
Several replications of Example 2 were made, and it was 7ays found that the surface area of the resulting powder was hin the range of 9.7 - 10.7 m2/g and the oxygen content 1.5 plus or minus 0.1%. These values are the same as those ob-tained for silicon nitride conventionally milled in alcohol as shown in Comparative Example C-6.
Fourier transform infrared spectroscopy of some of the powders produced in these Examples showed that those milled in alcohol contained hydrocarbon functional groups, probably iso-propyl siloxyl groups, and significant amounts of surface N-H
bonds. The presence of such groups at the surfaces of the pow-ders probably contributes to their favorable lack of a strong tendency to agglomerate until compressed into green bodies.
The powders produced by Examples 2 and 3 have spectra indicat-ing the presence of similar chemical species and also have ex-cellent dispersibility and little tendency to agglomerate. To the contrary, the powders from the other comparative examples had in their spectra extensive absorption ascribed to Si-o-H
bonds and very little absorption ascribed to N-H bonds.
After milling, the slurry of ~xample 2 had a pH of about 9.4 in the bulk. The slurry is very stable and was readily fil-tered through conventional filters with opening sizes as smallas 2 microns, without loss of more than 5% of the silicon ni-tride content. This is a further demonstration of the high quality of the dispersion obtained, and represents a useful technique for removing hard agglomerates or foreign particles that could be a source of weakness in bodies made by densifying the powders. The powder after drying by a preferred freeze dry-ing technique is fluffy and readily redispersible, at least as well as that powder prepared by conventionally alcohol milling.
Examples 7 - 10 These examples illustrate the selective precipitation of ore solid (yttrium hydroxide) on the surface of another (sili-~ nitride) by control of surface activity of reagents with re-act to the bulk activity. A slurry prepared as in Example 2 3 filtered successively through filters having average open-~ Is of 10 microns, 5 microns, and 2 microns. Less than 2% of t~ slurry was retained which confirms that the suspension is very well deflocculated and that the suspension is well-stabil-ized by the surfactant covering the silicon nitride particles.
To the suspension prepared as described above, nitric acid was added slowly with stirring to reduce the pH to about 7. An aqueous solution of yttrium nitrate having the desired ~mount of yttrium was then added slowly with stirring. To this Lution was slowly added an aqueous ammonia solution with con-~nt monitoring of the pH of the bulk suspension. Precipita-~ion oi yttrium hydroxide on the surfaces of the silicon ni-tride particles commenced immediately. The amount of yttrium ion added to the suspension was sufficient to form yttria in an amount of 0.7% of the silicon nitride powder for Example 7, 1.4 % for Example 8, 2.8% for Example 9, and 4.0% for Example 10.
After addition of the ammonia had caused more than 90% of the yttrium to be precipitated as yttrium hydroxide, the pH was gradually raised in the bulk of the dispersion medium by the addition of aqueous ammonia until the pH reached about 10.5.
., ~ .
2~(i338 This was done to assure essentially complete precipltation of all the added yttrium ion as yttrium hydroxide on the surface of the suspended solid powder. The hydrolysis constant for yt-trium is about 12 and thus no yttrium hydroxide should have pre-cipitated in the bulk.
Measurements of relative acoustophoretic mobility ("RAM") as a function of pH showed that the powder of Example 10 con-taining about 4% yttrium hydroxide had an RAM essentially iden-tical to that of pure colloidal yttrium hydroxide. ~ With the lesser amounts of yttrium used in the other examples, the RAM
m~surements showed behavior in between yttrium hydroxide and .icon nitride, depending on the extent of yttrium hydroxide ~erage of the surface.
The RAM measurements indicate that the surface layer form-1A in these Examples was capable of reversible hydration-dehy-dration cycles between hydroxide and oxide on drying at room temperature and redispersion in water. When the powder was dried and then redispersed in water, the RAM behavior in each case was closely analogous to that of colloidal yttria. As the redispersed powder remained in contact with water, its RAM be-havior returned to that characteristic of yttrium hydroxide in-stead. This reversibility suggested that the material present :~ the ~urface may have a somewhat different chemical reactiv-r than conventional bulk yttrium hydroxide or yttrium oxide, ~ ~ the material was capable of being converted to the oxide by d~ying and heating, such as would automatically occur if the coated powder were directly formed into a green body and densi-fied. Any such material is regarded herein as a precursor to the desired oxide. The oxide formed may also have a somewhat different chemical reactivity from bulk yttrium oxide because there was some evidence that the coated powders formed by this method densified more readily at a given temperature than would be expected for the amount of oxide present in the powder.
~ ~, . . . ................... .. ... . . . .
- ., .
,;, , . -Z~ 38 The products were also studied by electron spectroscopy for chemical analysis ("ESCA~). The apectra for powders with yttrium compounds coated on the surface are significantly dif-ferent from those for uncoated powders only in the presence of peaks ascribable to the yttrium compounds and in attenuation of the peaks ascribable to the 2p orbital electrons of silicon and the ls orbital electrons of nitrogen in samples with coatings.
Assuming an attenuation length, lambda, of 1.8 nanometers for silicon 2p electrons and even coverage of the yttrium compound on the powder surface, the thickness of the coating can be esti-mated from the equation:
Il/I2 = e-X/1.8 ~^here Il aand I2 are the intensities of the silicon 2p spec-^^a in the uncoated and coated powders respectively, e is these of natural logarithms, and x is the thickness of the cover-lg in nm. This calculation indicates that the coatings hadtnicknesses of about 0.2 nm in Example 7, 0.2-0.3 nm in Example 8, 0.7 nm in Example 9, and 0.9 nm in Example 10.
The powders from these Examples were also studied by sur-face transmission electron microscopy ("STEM"). STEM images for powder from Examples 2 and 10 are shown in Figures 1 and 2 respectively. The powder shown in Figure 1 contains no yttrium ~oating and is relatively smooth, while that of Figure 2 with l yttrium surface precipitated coating is noticeably rough in -- mparison. This is consistent with a coverage of very fine ~icrocrystals of yttrium hydroxide or oxide. The surface area of the yttria-coated powders increases with increasing yttria content and is substantially greater than silicon nitride with no yttria coating, as shown in Table 2.
Table 2 Specific Surface Area as a Function of Amount of Yttria Wt % Yttria Added: 0 0.7 1.4 2.8 4.0 Sg. Meters per Gram: 10.2 11 13.5 13.5 19 2[)~6338 A STEM image of similar silicon nitride powder milled in alcohol together with yttria, according to the conventional prior art, is shown in Figure 3. Discrete small particles of yttria are scattered inhomogeneously among the milled powder, with little, if any, evidence that any of the yttria is adhered to the silicon nitride or comes even close to uniformly cover-ing its surface. This is in sharp contrast to the yttria-coat-ed powder of this invention as shown in Figure 2. As shown by Comparative Example C-10 below, the non-uniformly distributed yttria produced by alcohol milling is le~s effective as a sin-tering aid than the much more nearly uniform coating of the pre-sent invention.
The powders prepared according to Examples 7-10 were con-~ntionally cold pressed into green bodies and then densifieda hot isostatic press ("HIP") according to the teachings of 3. Pat. No. 4,446,100. The densities achieved thereby were ~n megagrams per cubic meter) 3.218 for Example 10, 3.186 for Example 9, 3.178 for Example 8, and 3.171 for Example 7.
Conventional test bars for measuring modulus of rupture ~MOR) were cut from the densified products from Examples 9 and 10. The bars from Example 10 had an MOR of 760 + or - 100 mega-pascals (MPa) at room temperature (average of fifteen tests) 1 an MOR of 580 + or - 40 MPa at 1370C. (average of five 7ts). Those from Example 9 had an MOR of 750 + or - 100 MPa room temperature and of 560 + or - 13 MPa at 1370-C. Frac-t~re toughness values were measured (by a controlled flow meth-od with a 10 kg load) only at 1370-C. and were 5.6 MPa m0-5 for Example 10 and 5.1 MPa m0-5 for Example 9. All these val-ues are at least about equal to those obtained by similar pro-cessing of powders milled in alcohol with additions of the same amount of yttria during milling.
Scanning electron micrograph of chemically etched surfac-es of material densified as described above show that the sili-. .
-- .
20~6338 con nitride microcrystals have exceptionally long, asymmetric shapes with aspect ratios up to 8. The micrographs do not show any porosity even at 10,000 x magnification. X-ray diffraction patterns show that the conversion to beta silicon nitride ap-pears complete, with no other phases detectable; the sensitiv-ity is too low to detect the yttrium containing intergranular phase expected to be present.
No presence of any of the surfactants was detected in any of the samples, suggesting that the level either was below the l.~vel of detection or that the surfactants were totally destroy-1 during the high temperature processing.
Comparative Example C-10 To evaluate the sintering ability of low levels of yttria ~ded to silicon nitride conventionally, i.e. as particles dur-ing milling in isopropanol, as compared to the yttria-coated silicon nitride powders of the present invention, samples were prepared by each method at a rate of 0.7 and 1.0% yttria.
The conventional silicon nitride compositions were prepar-ed by mixing the compositions with a small amount of isopropa-n~l to form a slurry. The two slurries were each placed in a ~1 jar together with several silicon nitride balls and mixed approximately twenty-four hours. Each slurry was removed 1 dried. About 55 g of each of the dried powders was formed to a billet by cold isostatic pressing at 30,000-50,000 psi.
~ samples were then degassed at 1350-C. and then hot isostat-i ally pressed in a glass encapsulant at 1860-l900'C. for one hour. Neither of these samples densified to full density, hav-ing densities of less than 3.17. To determine the strength of the resultant bodies, machining of standard modulus of rupture bars from the billets was attempted. No 6uch bars could be ma-chined because the billets were so cracked and porous.
For comparison purposes, coated silicon nitride particles .. . . .. , .... ,.. ~. __ X~)~3G338 were prepared in accordance with the procedure of Examples 7-10, i.e. having yttria deposited upon the particles as a sub-stantially uniform surface layer coating, but having 0.7 and 1.0% yttria respectively. The particles were formed into bill-ets by cold isostatic pressing and then hot isostatically press-ed in a glass encapsulant as were the conventional samples.
The resultant billets were fully dense and uncracked. Modulus of rupture bars were machined from the billets of the 1.0% yt-tria composition and were found to have a room temperature flex-ure strength of 132 + 19 ksi.
Example 11 The procedure of Examples 1-6 was repeated to demonstrate t materials other than silicon nitride can be protected from leterious reactions with a suspension fluid during comminu-Ion. The material comminuted was silicon carbide and the flu-id was water. Cavco Mod APG was used in one sample as the sur-factant at a level of 2% while the other sample contained no surfactant. Milling was continued for about 15 hours at which point the samples were evaluated for the presence of oxygen which was found at a level below about 1.8% in the sample con-taining the surfactant. The oxygen content was about 6% in the corresponding sample not containing the surfactant.
Comparative Example C-ll The procedure of Examples 1-6 is repeated with a variety of different surfactants which were found either to cause exces-ive foam or to insufficiently protect the silicon nitride from ~gradation due to its reaction with the water dispersion medi-um. The surfactants tested and results of the milling tests were as shown in Table 4 which follows:
Table 4 Surfactant Results of Millina (a) Coco - 2% Excessive foaming and silica (b) Coco - 4% Excessive foaming and silica , 2 [)~G338 .
(c) Ammonium poly- Excessive silica formation acrylate - 2%
(d) Pluronic P1~3 - 2% Excessive silica formation (e) Daxad - 2% Excessive silica formation (f) Colloid lllM - 3% Excessive silica formation In Table 4 "Pluronic P123" is a polyol formed by the addi-tion of propylene oxide to the two hydroxyl groups of a propyl-ene glycol, having an average molecular weight of 4,400, and available from BASF; "Daxad" is a sodium salt of a polymerized alkyl naphthalene sulfonic acid and available from Diamond Sham-rock: and "Colloid lllM" is an amine salt of a polycarboxylate and available from Calgon.
Example 12 The procedure of Examples 7-10 is repeated except the yt-trium nitrate is replaced by magnesium nitrate which is used in an amount to produce a coating of about 0.5% surface precipitat-ed magnesium hydroxide on the silicon nitride particles. The hydrolysis constant for magnesium ion is about 12. According-ly, the pH of the deposition solution is maintained below about 10.5 until most of the magnesium has been deposited. Thereaf-ter, the pH i~ increased to about 11 to assure complete utiliza-~on of the magnesium. The resultant magnesium hydroxide coat-silicon nitride particles are then used directly to cast mod-us of rupture test bars. When the bars are evaluated along w.th bars prepared from conventionally milled silicon nitride-magnesia compositions containing about 1% magnesia, an amount which is often used, the results are substantially the same even though the bars of the present invention only contained 50% of the magnesia of the conventional bars.
Example 13 The procedure of Example 11 was repeated to evaluate the effectiveness of other surfactants (1% by weight) at protecting silicon carbide from reaction with water milling medium while .... . . . . .
!
2C)~16338 milling for 24 hours. The surfactants evaluated and results obtained are shown in Table 5.
Table 5 $urfactant Results of Millina (a) Triethylamine titanate Good - 1.44% oxygen (b) Zirconium alkylamine Poor - blew mill (13% metal) (c) Manchem S (mercapto func- Excellent, no qas tional zircoaluminate) (d) Manchem F (oleophilic Excellent, no gas zircoaluminate) (e) Manchem C (carboxy func- Excellent, no gas tional zircoaluminate) Example 14 The procedure of Examples 1-6 was repeated with a variety o~ dif~erent surfactants which were found to protect silicon ni-tride from undue deleterious reactions with water. The surfac-tants tested and the results of the milling tests are shown in Table 6 below.
Table 6 Surfactant Results of Millina (a) Triethanolamine com- Fair - 1.44% oxygen plex of Ti (Tyzor TE) (b) Alkanolamine complex Poor - 2.48% oxygen of Zr (MPD 6212) (c) Alkanolamine complex 1.26% oxygen; 9.45 m2/g of Ti (Tyzor DEA) surface area Example 15 The procedure of Examples 1-6 was repeated several times to produce water-milled silicon nitride particles which were dried and their particle sizes determined. The particles were then coated with 1% yttria by the procedure of Example 7 which .
were dried and their particle sizes determined. The average re-sults of the multiple different determinations were:
As Milled After Yttria Dlo 0.20 0.22 DSo 0.60 0.63 Dgo 1.00 1.06 The presence of a uniform yttria coating is substantiated by the consistency of the particle size results.
Example 16 The procedure of Examples 7-10 was repeated to produce a 1~ magnesia-coated silicon nitride. NBD-200, a conventional 1%
~nesia-silicon nitride mixture, was used for comparative pur-3es. The coated material was sintered by the standard sinter-cycle used for the conventional NBD-200 and reached full i~sity. The material was evaluated for hardness and toughness by Vickers indentation and for phase conversion. The results and typical values for NBD-200 were:
Coated Invention NBD-200 Typical Dense Phase 8.7% 7-15%
Analysis Toughness 4.7 4.2-4.8 (MPa m~) Hardness 21.8 16-17 ~HVlOkg) While the Examples above have described the processes of (i) aqueous milling of materials subject to degradation from contact with water and (ii) selective precipitation on the sur-~ace of suspended particles in connection with particles prepar-ed by milling in the presence of surfactants, the utility of the aqueous milling and the selective precipitation processes are not restricted to such conditions.
f
Ube T Deionized water + 2% Cavco Mod APG
6 Ube B Deionized water + 1% Coco The milling conditions were determined by having perform-ed a preliminary screening for attractive operating conditions which would minimiz~ the amount of ammonia generated during the milling. All of the comparative example~ except C-6, which re-pre~ents the currently established conventional art, generated substantial amounts of ammonia during milling. C-5, with some o~ the water replaced by isopropanol, produced less ammonia :~an the others but still did not make satisfactory powder in cvmparison with C-6.
, All of the Examples 1-6 generated less ammonia during the milling than did any of the comparative examples except C-4 or C-6. Examples 2, 4, and 5 all generated approximately equal amounts of ammonia durinq milling, smaller amounts of ammonia than the other examples, while Example 3, with more surfactant, generated more foam and was thus considered less desirable. It was therefore concluded that Cavco Mod APG at a level of about 2% was the best surfactant among these examples. Example 6 us-ing Coco at 1% did show evidence of foaming and also produced more ammonia (and thus silica) than the other Examples and thus _o is suggested for primary use for silicon nitrides which 11 not be subjected to extremely hiqh temperatures.
Several replications of Example 2 were made, and it was 7ays found that the surface area of the resulting powder was hin the range of 9.7 - 10.7 m2/g and the oxygen content 1.5 plus or minus 0.1%. These values are the same as those ob-tained for silicon nitride conventionally milled in alcohol as shown in Comparative Example C-6.
Fourier transform infrared spectroscopy of some of the powders produced in these Examples showed that those milled in alcohol contained hydrocarbon functional groups, probably iso-propyl siloxyl groups, and significant amounts of surface N-H
bonds. The presence of such groups at the surfaces of the pow-ders probably contributes to their favorable lack of a strong tendency to agglomerate until compressed into green bodies.
The powders produced by Examples 2 and 3 have spectra indicat-ing the presence of similar chemical species and also have ex-cellent dispersibility and little tendency to agglomerate. To the contrary, the powders from the other comparative examples had in their spectra extensive absorption ascribed to Si-o-H
bonds and very little absorption ascribed to N-H bonds.
After milling, the slurry of ~xample 2 had a pH of about 9.4 in the bulk. The slurry is very stable and was readily fil-tered through conventional filters with opening sizes as smallas 2 microns, without loss of more than 5% of the silicon ni-tride content. This is a further demonstration of the high quality of the dispersion obtained, and represents a useful technique for removing hard agglomerates or foreign particles that could be a source of weakness in bodies made by densifying the powders. The powder after drying by a preferred freeze dry-ing technique is fluffy and readily redispersible, at least as well as that powder prepared by conventionally alcohol milling.
Examples 7 - 10 These examples illustrate the selective precipitation of ore solid (yttrium hydroxide) on the surface of another (sili-~ nitride) by control of surface activity of reagents with re-act to the bulk activity. A slurry prepared as in Example 2 3 filtered successively through filters having average open-~ Is of 10 microns, 5 microns, and 2 microns. Less than 2% of t~ slurry was retained which confirms that the suspension is very well deflocculated and that the suspension is well-stabil-ized by the surfactant covering the silicon nitride particles.
To the suspension prepared as described above, nitric acid was added slowly with stirring to reduce the pH to about 7. An aqueous solution of yttrium nitrate having the desired ~mount of yttrium was then added slowly with stirring. To this Lution was slowly added an aqueous ammonia solution with con-~nt monitoring of the pH of the bulk suspension. Precipita-~ion oi yttrium hydroxide on the surfaces of the silicon ni-tride particles commenced immediately. The amount of yttrium ion added to the suspension was sufficient to form yttria in an amount of 0.7% of the silicon nitride powder for Example 7, 1.4 % for Example 8, 2.8% for Example 9, and 4.0% for Example 10.
After addition of the ammonia had caused more than 90% of the yttrium to be precipitated as yttrium hydroxide, the pH was gradually raised in the bulk of the dispersion medium by the addition of aqueous ammonia until the pH reached about 10.5.
., ~ .
2~(i338 This was done to assure essentially complete precipltation of all the added yttrium ion as yttrium hydroxide on the surface of the suspended solid powder. The hydrolysis constant for yt-trium is about 12 and thus no yttrium hydroxide should have pre-cipitated in the bulk.
Measurements of relative acoustophoretic mobility ("RAM") as a function of pH showed that the powder of Example 10 con-taining about 4% yttrium hydroxide had an RAM essentially iden-tical to that of pure colloidal yttrium hydroxide. ~ With the lesser amounts of yttrium used in the other examples, the RAM
m~surements showed behavior in between yttrium hydroxide and .icon nitride, depending on the extent of yttrium hydroxide ~erage of the surface.
The RAM measurements indicate that the surface layer form-1A in these Examples was capable of reversible hydration-dehy-dration cycles between hydroxide and oxide on drying at room temperature and redispersion in water. When the powder was dried and then redispersed in water, the RAM behavior in each case was closely analogous to that of colloidal yttria. As the redispersed powder remained in contact with water, its RAM be-havior returned to that characteristic of yttrium hydroxide in-stead. This reversibility suggested that the material present :~ the ~urface may have a somewhat different chemical reactiv-r than conventional bulk yttrium hydroxide or yttrium oxide, ~ ~ the material was capable of being converted to the oxide by d~ying and heating, such as would automatically occur if the coated powder were directly formed into a green body and densi-fied. Any such material is regarded herein as a precursor to the desired oxide. The oxide formed may also have a somewhat different chemical reactivity from bulk yttrium oxide because there was some evidence that the coated powders formed by this method densified more readily at a given temperature than would be expected for the amount of oxide present in the powder.
~ ~, . . . ................... .. ... . . . .
- ., .
,;, , . -Z~ 38 The products were also studied by electron spectroscopy for chemical analysis ("ESCA~). The apectra for powders with yttrium compounds coated on the surface are significantly dif-ferent from those for uncoated powders only in the presence of peaks ascribable to the yttrium compounds and in attenuation of the peaks ascribable to the 2p orbital electrons of silicon and the ls orbital electrons of nitrogen in samples with coatings.
Assuming an attenuation length, lambda, of 1.8 nanometers for silicon 2p electrons and even coverage of the yttrium compound on the powder surface, the thickness of the coating can be esti-mated from the equation:
Il/I2 = e-X/1.8 ~^here Il aand I2 are the intensities of the silicon 2p spec-^^a in the uncoated and coated powders respectively, e is these of natural logarithms, and x is the thickness of the cover-lg in nm. This calculation indicates that the coatings hadtnicknesses of about 0.2 nm in Example 7, 0.2-0.3 nm in Example 8, 0.7 nm in Example 9, and 0.9 nm in Example 10.
The powders from these Examples were also studied by sur-face transmission electron microscopy ("STEM"). STEM images for powder from Examples 2 and 10 are shown in Figures 1 and 2 respectively. The powder shown in Figure 1 contains no yttrium ~oating and is relatively smooth, while that of Figure 2 with l yttrium surface precipitated coating is noticeably rough in -- mparison. This is consistent with a coverage of very fine ~icrocrystals of yttrium hydroxide or oxide. The surface area of the yttria-coated powders increases with increasing yttria content and is substantially greater than silicon nitride with no yttria coating, as shown in Table 2.
Table 2 Specific Surface Area as a Function of Amount of Yttria Wt % Yttria Added: 0 0.7 1.4 2.8 4.0 Sg. Meters per Gram: 10.2 11 13.5 13.5 19 2[)~6338 A STEM image of similar silicon nitride powder milled in alcohol together with yttria, according to the conventional prior art, is shown in Figure 3. Discrete small particles of yttria are scattered inhomogeneously among the milled powder, with little, if any, evidence that any of the yttria is adhered to the silicon nitride or comes even close to uniformly cover-ing its surface. This is in sharp contrast to the yttria-coat-ed powder of this invention as shown in Figure 2. As shown by Comparative Example C-10 below, the non-uniformly distributed yttria produced by alcohol milling is le~s effective as a sin-tering aid than the much more nearly uniform coating of the pre-sent invention.
The powders prepared according to Examples 7-10 were con-~ntionally cold pressed into green bodies and then densifieda hot isostatic press ("HIP") according to the teachings of 3. Pat. No. 4,446,100. The densities achieved thereby were ~n megagrams per cubic meter) 3.218 for Example 10, 3.186 for Example 9, 3.178 for Example 8, and 3.171 for Example 7.
Conventional test bars for measuring modulus of rupture ~MOR) were cut from the densified products from Examples 9 and 10. The bars from Example 10 had an MOR of 760 + or - 100 mega-pascals (MPa) at room temperature (average of fifteen tests) 1 an MOR of 580 + or - 40 MPa at 1370C. (average of five 7ts). Those from Example 9 had an MOR of 750 + or - 100 MPa room temperature and of 560 + or - 13 MPa at 1370-C. Frac-t~re toughness values were measured (by a controlled flow meth-od with a 10 kg load) only at 1370-C. and were 5.6 MPa m0-5 for Example 10 and 5.1 MPa m0-5 for Example 9. All these val-ues are at least about equal to those obtained by similar pro-cessing of powders milled in alcohol with additions of the same amount of yttria during milling.
Scanning electron micrograph of chemically etched surfac-es of material densified as described above show that the sili-. .
-- .
20~6338 con nitride microcrystals have exceptionally long, asymmetric shapes with aspect ratios up to 8. The micrographs do not show any porosity even at 10,000 x magnification. X-ray diffraction patterns show that the conversion to beta silicon nitride ap-pears complete, with no other phases detectable; the sensitiv-ity is too low to detect the yttrium containing intergranular phase expected to be present.
No presence of any of the surfactants was detected in any of the samples, suggesting that the level either was below the l.~vel of detection or that the surfactants were totally destroy-1 during the high temperature processing.
Comparative Example C-10 To evaluate the sintering ability of low levels of yttria ~ded to silicon nitride conventionally, i.e. as particles dur-ing milling in isopropanol, as compared to the yttria-coated silicon nitride powders of the present invention, samples were prepared by each method at a rate of 0.7 and 1.0% yttria.
The conventional silicon nitride compositions were prepar-ed by mixing the compositions with a small amount of isopropa-n~l to form a slurry. The two slurries were each placed in a ~1 jar together with several silicon nitride balls and mixed approximately twenty-four hours. Each slurry was removed 1 dried. About 55 g of each of the dried powders was formed to a billet by cold isostatic pressing at 30,000-50,000 psi.
~ samples were then degassed at 1350-C. and then hot isostat-i ally pressed in a glass encapsulant at 1860-l900'C. for one hour. Neither of these samples densified to full density, hav-ing densities of less than 3.17. To determine the strength of the resultant bodies, machining of standard modulus of rupture bars from the billets was attempted. No 6uch bars could be ma-chined because the billets were so cracked and porous.
For comparison purposes, coated silicon nitride particles .. . . .. , .... ,.. ~. __ X~)~3G338 were prepared in accordance with the procedure of Examples 7-10, i.e. having yttria deposited upon the particles as a sub-stantially uniform surface layer coating, but having 0.7 and 1.0% yttria respectively. The particles were formed into bill-ets by cold isostatic pressing and then hot isostatically press-ed in a glass encapsulant as were the conventional samples.
The resultant billets were fully dense and uncracked. Modulus of rupture bars were machined from the billets of the 1.0% yt-tria composition and were found to have a room temperature flex-ure strength of 132 + 19 ksi.
Example 11 The procedure of Examples 1-6 was repeated to demonstrate t materials other than silicon nitride can be protected from leterious reactions with a suspension fluid during comminu-Ion. The material comminuted was silicon carbide and the flu-id was water. Cavco Mod APG was used in one sample as the sur-factant at a level of 2% while the other sample contained no surfactant. Milling was continued for about 15 hours at which point the samples were evaluated for the presence of oxygen which was found at a level below about 1.8% in the sample con-taining the surfactant. The oxygen content was about 6% in the corresponding sample not containing the surfactant.
Comparative Example C-ll The procedure of Examples 1-6 is repeated with a variety of different surfactants which were found either to cause exces-ive foam or to insufficiently protect the silicon nitride from ~gradation due to its reaction with the water dispersion medi-um. The surfactants tested and results of the milling tests were as shown in Table 4 which follows:
Table 4 Surfactant Results of Millina (a) Coco - 2% Excessive foaming and silica (b) Coco - 4% Excessive foaming and silica , 2 [)~G338 .
(c) Ammonium poly- Excessive silica formation acrylate - 2%
(d) Pluronic P1~3 - 2% Excessive silica formation (e) Daxad - 2% Excessive silica formation (f) Colloid lllM - 3% Excessive silica formation In Table 4 "Pluronic P123" is a polyol formed by the addi-tion of propylene oxide to the two hydroxyl groups of a propyl-ene glycol, having an average molecular weight of 4,400, and available from BASF; "Daxad" is a sodium salt of a polymerized alkyl naphthalene sulfonic acid and available from Diamond Sham-rock: and "Colloid lllM" is an amine salt of a polycarboxylate and available from Calgon.
Example 12 The procedure of Examples 7-10 is repeated except the yt-trium nitrate is replaced by magnesium nitrate which is used in an amount to produce a coating of about 0.5% surface precipitat-ed magnesium hydroxide on the silicon nitride particles. The hydrolysis constant for magnesium ion is about 12. According-ly, the pH of the deposition solution is maintained below about 10.5 until most of the magnesium has been deposited. Thereaf-ter, the pH i~ increased to about 11 to assure complete utiliza-~on of the magnesium. The resultant magnesium hydroxide coat-silicon nitride particles are then used directly to cast mod-us of rupture test bars. When the bars are evaluated along w.th bars prepared from conventionally milled silicon nitride-magnesia compositions containing about 1% magnesia, an amount which is often used, the results are substantially the same even though the bars of the present invention only contained 50% of the magnesia of the conventional bars.
Example 13 The procedure of Example 11 was repeated to evaluate the effectiveness of other surfactants (1% by weight) at protecting silicon carbide from reaction with water milling medium while .... . . . . .
!
2C)~16338 milling for 24 hours. The surfactants evaluated and results obtained are shown in Table 5.
Table 5 $urfactant Results of Millina (a) Triethylamine titanate Good - 1.44% oxygen (b) Zirconium alkylamine Poor - blew mill (13% metal) (c) Manchem S (mercapto func- Excellent, no qas tional zircoaluminate) (d) Manchem F (oleophilic Excellent, no gas zircoaluminate) (e) Manchem C (carboxy func- Excellent, no gas tional zircoaluminate) Example 14 The procedure of Examples 1-6 was repeated with a variety o~ dif~erent surfactants which were found to protect silicon ni-tride from undue deleterious reactions with water. The surfac-tants tested and the results of the milling tests are shown in Table 6 below.
Table 6 Surfactant Results of Millina (a) Triethanolamine com- Fair - 1.44% oxygen plex of Ti (Tyzor TE) (b) Alkanolamine complex Poor - 2.48% oxygen of Zr (MPD 6212) (c) Alkanolamine complex 1.26% oxygen; 9.45 m2/g of Ti (Tyzor DEA) surface area Example 15 The procedure of Examples 1-6 was repeated several times to produce water-milled silicon nitride particles which were dried and their particle sizes determined. The particles were then coated with 1% yttria by the procedure of Example 7 which .
were dried and their particle sizes determined. The average re-sults of the multiple different determinations were:
As Milled After Yttria Dlo 0.20 0.22 DSo 0.60 0.63 Dgo 1.00 1.06 The presence of a uniform yttria coating is substantiated by the consistency of the particle size results.
Example 16 The procedure of Examples 7-10 was repeated to produce a 1~ magnesia-coated silicon nitride. NBD-200, a conventional 1%
~nesia-silicon nitride mixture, was used for comparative pur-3es. The coated material was sintered by the standard sinter-cycle used for the conventional NBD-200 and reached full i~sity. The material was evaluated for hardness and toughness by Vickers indentation and for phase conversion. The results and typical values for NBD-200 were:
Coated Invention NBD-200 Typical Dense Phase 8.7% 7-15%
Analysis Toughness 4.7 4.2-4.8 (MPa m~) Hardness 21.8 16-17 ~HVlOkg) While the Examples above have described the processes of (i) aqueous milling of materials subject to degradation from contact with water and (ii) selective precipitation on the sur-~ace of suspended particles in connection with particles prepar-ed by milling in the presence of surfactants, the utility of the aqueous milling and the selective precipitation processes are not restricted to such conditions.
f
Claims (38)
1. A ceramic particle comprising an inorganic nitride or carbide having an average diameter less than about 2 microns and having deposited thereon a substantially uniform surface layer coating of a metal compound selected from metal hydrox-ides and metal oxides.
2. The particle of Claim 1 wherein the inorganic nitride or carbide is comprised of a nitride selected from the group consisting of silicon nitride, boron nitride, titanium nitride, and aluminum nitride.
3. The particle of Claim 1 wherein the inorganic nitride or carbide consists essentially of silicon nitride.
4. The particle of Claim 1 wherein the inorganic nitride or carbide is comprised of a carbide selected from the group consisting of silicon carbide, boron carbide, and titanium carbide.
5. The particle of Claim 1 wherein the inorganic nitride or carbide consists essentially of silicon carbide.
6. The particle of Claim 1 wherein the metal compound is a metal hydroxide which is hydrolized to form the metal oxide.
7. The particle of Claim 6 wherein the metal oxide is se-lected from the group consisting of yttria, magnesia, zirconia, ceria, hafnia, and alumina.
8. The particle of Claim 1 wherein the metal compound is deposited from an aqueous solution.
9. The particle of Claim 1 wherein the coating is less than about 10 angstroms thick on average.
10. The particle of Claim 1 wherein the metal compound is selected from yttrium hydroxide and yttrium oxide.
11. The particle of Claim 10 wherein the yttrium hydrox-ide or yttrium oxide is present in an amount of about 0.5 to about 1.2 percent by weight of the particle.
12. The particle of Claim 1 in the substantial absence of any free particles of a metal oxide.
13. The particle of Claim 1 wherein the metal compound re-presents from about 0.5 to about lo percent of the weight of the particle.
14. The particle of Claim 1 wherein the metal compound is deposited by a surface precipitation procedure from an aqueous solution which comprises ions of the metal.
15. The particle of Claim 14 wherein the surface precipi-tation procedure is performed under a procedure which precludes the formation of free particles of the metal compound.
16. The particle of Claim 15 wherein said precluding pro-cedure comprises maintaining the pH of the aqueous solution at least about 1.5 pH units below the hydrolysis constant of the metal ion until at least about 90 weight percent of the metal ions have been deposited upon the silicon nitride particles.
17. A method of preparing the particle of Claim 1 in the substantial absence of free particles of metal hydroxide and me-tal oxide which comprises (i) placing nitride or carbide parti-cles having average diameters less than about 2 microns into a solution comprising water and a surfactant which reacts with the nitride or carbide particles at a faster rate than the water, (ii) adding thereto an aqueous solution which comprises ions of the metal, which will form the metal compound, and (iii) increasing the pH of the solution of the metal and the nitride or carbide to deposit the metal hydroxide on the sur-face of the ceramic nitride or carbide particles, wherein the pH of the silicon nitride solution is increased to no higher than about 1.5 pH units below the hydrolysis constant of the metal ion until at least about 90 weight percent of the metal ions have been deposited upon the silicon nitride particles.
18. The method of Claim 17 comprising the additional step (iv) of increasing the pH of the solution to within about 0.5 pH units of the hydrolysis constant of the metal ion.
19. The method of Claim 17 wherein the pH in (iii) is maintained at least about 2 pH units below the hydrolysis con-stant of the metal ion.
20. A process for the preparation of suspensions of fine-ly divided particles of a first solid which is predominantly an inorganic nitride or carbide in a fluid suspension medium which is predominantly water and with which surfaces of said first solid are chemically reactive, comprising the steps of:
(a) mixing together particles of said first solid having a first average size, said suspension medium, and a sur-factant that is (i) soluble in said suspension medium and (ii) capable of adsorbing on freshly created surfaces of said first solid at a faster rate than the suspension medium can react therewith so that the surfactant at least retards the reaction that would otherwise occur between said first solid and said dispersion medium; and (b) comminuting the solid particles in the mixture formed in step (a) to particles of a second average size which is smaller than said first average size.
(a) mixing together particles of said first solid having a first average size, said suspension medium, and a sur-factant that is (i) soluble in said suspension medium and (ii) capable of adsorbing on freshly created surfaces of said first solid at a faster rate than the suspension medium can react therewith so that the surfactant at least retards the reaction that would otherwise occur between said first solid and said dispersion medium; and (b) comminuting the solid particles in the mixture formed in step (a) to particles of a second average size which is smaller than said first average size.
21. The process of Claim 20 wherein the inorganic nitride or carbide is comprised of a nitride selected from the group consisting of silicon nitride, boron nitride, titanium nitride, and aluminum nitride.
22. The process of Claim 20 wherein the inorganic nitride or carbide consists essentially of silicon nitride.
23. The process of Claim 20 wherein the inorganic nitride or carbide is comprised of a carbide selected from the group consisting of silicon carbide, boron carbide, and titanium carbide.
24. The process of Claim 20 wherein the inorganic nitride or carbide consists essentially of silicon carbide.
25. The process of Claim 20 wherein the surfactant is se-lected from the group consisting essentially of amino-function-al zircoaluminate surfactants having an inorganic polymer back-bone, silanes, titanium alkoxides, aluminum alkoxides, zircon-ium alkoxides, and iridium-based surfactants.
26. The process of Claim 25, wherein said surfactant con-sists essentially of the reaction product of a chelated alumi-num moiety, an organofunctional ligand, and a zirconium oxyha-lide, the organofunctional ligand being complexed with and chem-ically bound to the chelated aluminum moiety, the aluminum moi-ety having the formula Al2(OR1O)aAbBc, wherein each of A and B is hydroxy or halide and each of a, b, and c are integers such that 2a + b + c = 6, and OR1O is (a) an alpha, beta or an alpha, gamma glycol group in which R1 is an alkyl group having about 1 to about 6 carbon atoms or (b) an alpha hydroxy carboxylic acid residue of the formula wherein R3 is H or an alkyl group having about 1 to about 4 car-bon atoms; said organofunctional ligand being (a) an alkyl, alkenyl, alkynl, or aralkyl carboxylic acid having about 2 to about 36 carbon atoms, (b) an aminofunctional carboxylic acid having about 2 to about 18 carbon atoms, (c) a dibasic carboxyl-ic acid having about 2 to about 18 carbon atoms, (d) an acid an-ydride of dibasic acid having about 2 to about 18 carbon atoms, (e) a mercapto functional carboxylic acid having about 2 to about 18 carbon atoms, or (f) an epoxy functional carboxylic acid having about 2 to about 18 carbon atoms; said zirconium oxyhalide moiety having the formula ZrAdBe, wherein A and B
are as above defined and d and e are integers such that d + e =
4; the molar ratio of chelated aluminum moiety to zirconium oxy-halide moiety being about 1.5 to about 10; and the molar ratio of organofunctional ligand to total metal being about 0.05 to about 2.
are as above defined and d and e are integers such that d + e =
4; the molar ratio of chelated aluminum moiety to zirconium oxy-halide moiety being about 1.5 to about 10; and the molar ratio of organofunctional ligand to total metal being about 0.05 to about 2.
27. The process of Claim 20 comprising said second aver-age particle size being less than about 2 microns and an addi-tional step of filtering a dispersion of said first solid in said dispersion medium through a filter having an average open-ing size of about 2 microns or less and recovering in the fil-trate at least 90% of the first solid content.
28. A process for depositing a first solid material upon the surface of a particle of a second solid material suspended in a dispersion medium, comprising the steps of:
(i) providing in solution in said dispersion medium at least two distinct reagent materials that are capable of reaction to form said first solid material; and (ii) establishing an increased chemical activity of at least one of said reagents in the part of said dispersion medium in the vicinity of the surface of said second sol-id material, compared with the bulk of said dispersion medium, whereby reaction occurs between said reagents to deposit said first solid upon the surface of said second solid while substan-tially avoiding precipitation of said first solid from the bulk of said dispersion medium.
(i) providing in solution in said dispersion medium at least two distinct reagent materials that are capable of reaction to form said first solid material; and (ii) establishing an increased chemical activity of at least one of said reagents in the part of said dispersion medium in the vicinity of the surface of said second sol-id material, compared with the bulk of said dispersion medium, whereby reaction occurs between said reagents to deposit said first solid upon the surface of said second solid while substan-tially avoiding precipitation of said first solid from the bulk of said dispersion medium.
29. The process of Claim 28 wherein said second solid is predominantly silicon nitride and said first solid is a densi-fication aid metal oxide for silicon nitride or a precursor of such a densification aid.
30. The process of Claim 29 wherein said densification aid precursor is predominantly a rare earth hydroxide.
31. The process of Claim 29 wherein the deposition while avoiding precipitation of the rare earth hydroxide from the bulk is produced by maintaining the pH of the bulk solution at least about 1.5 pH units below the hydrolysis constant of an ion of the metal until at least so weight percent of the metal ion has deposited on the silicon nitride.
32. The process of Claim 29 wherein said sintering aid precursor consists essentially of yttrium hydroxide.
33. A solid material consisting essentially of a plural-ity of particles, each of said particles comprising a core pre-dominantly of a ceramic material selected from silicon nitride and silicon carbide and a surface layer predominantly of one or more rare earth hydroxides or oxides, said solid material being substantially free from particles consisting essentially of rare earth hydroxides or oxides with no silicon nitride or sili-con carbide content.
34. The solid material of Claim 33 wherein said particle core consists essentially of silicon nitride having a purity of at least about 96% and an alpha phase content of at least about 90%.
35. The solid material of Claim 33, wherein said particle surface layers consist essentially of yttria or a precursor of yttria and have a thickness such that about 0.5 to about 5 weight % of the solid is yttria or a stoichiometric equivalent thereto.
36. A solid material comprising a plurality of particles, each of said particles comprising (i) a core predominantly of silicon nitride or silicon carbide and (ii) a substantially uni-form surface layer predominantly of one or more rare earth hy-droxides or oxides, said solid material having been prepared by a process which precludes the simultaneous preparation of parti-cles consisting essentially of rare earth hydroxides or oxides without any silicon nitride or silicon carbide content.
37. The solid material of Claim 36 further comprising particles consisting essentially of rare earth hydroxides or ox-ides with no silicon nitride content.
38. The solid material of Claim 36 wherein the rare earth hydroxide or oxide is yttria or precursor of yttria and is pres-ent in an amount of about 0.5 to about 1.2 weight percent.
Applications Claiming Priority (4)
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US28820888A | 1988-12-22 | 1988-12-22 | |
US288,208 | 1988-12-22 | ||
US450,200 | 1989-12-13 | ||
US07/450,200 US5098740A (en) | 1989-12-13 | 1989-12-13 | Uniformly-coated ceramic particles |
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CA2006338A1 true CA2006338A1 (en) | 1990-06-22 |
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CA 2006338 Abandoned CA2006338A1 (en) | 1988-12-22 | 1989-12-21 | Uniformly-coated ceramic particles |
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EP (1) | EP0449990A4 (en) |
CA (1) | CA2006338A1 (en) |
DK (1) | DK114091A (en) |
ES (1) | ES2037650T1 (en) |
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WO (1) | WO1990006906A1 (en) |
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GB9015890D0 (en) * | 1990-07-19 | 1990-09-05 | Tioxide Group Services Ltd | Process for forming ceramics |
GB9015892D0 (en) * | 1990-07-19 | 1990-09-05 | Tioxide Group Services Ltd | Compositions |
US5273699A (en) * | 1992-02-14 | 1993-12-28 | The Dow Chemical Company | Moisture-resistant aluminum nitride powder and methods of making and using |
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JPS5864280A (en) * | 1981-10-12 | 1983-04-16 | 住友電気工業株式会社 | Manufacture of non-oxide ceramics sintered body |
JPS60151273A (en) * | 1984-01-19 | 1985-08-09 | トヨタ自動車株式会社 | Manufacture of ceramic-coated fine powder of metal compound |
DE3508171A1 (en) * | 1985-03-07 | 1986-09-11 | Elektroschmelzwerk Kempten GmbH, 8000 München | METHOD FOR PRODUCING SINTER-ACTIVE SILICON CARBIDE AND / OR BORCARBIDE POWDER |
JPH0788258B2 (en) * | 1985-08-01 | 1995-09-27 | ジ−・テイ−・イ−・ラボラトリ−ズ・インコ−ポレイテツド | Method for producing silicon nitride powder having good sinterability |
US4814128A (en) * | 1985-08-01 | 1989-03-21 | Gte Laboratories Incorporated | Process for making a homogeneous doped silicon nitride article |
DE3637506A1 (en) * | 1986-11-04 | 1988-05-05 | Bayer Ag | METHOD FOR PRODUCING ENGINEERING-CERAMIC POWDERS WITH ADDITIVES |
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1989
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- 1989-12-19 EP EP19900902580 patent/EP0449990A4/en not_active Withdrawn
- 1989-12-19 ES ES90902580T patent/ES2037650T1/en active Pending
- 1989-12-21 CA CA 2006338 patent/CA2006338A1/en not_active Abandoned
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FI913050A0 (en) | 1991-06-20 |
ES2037650T1 (en) | 1993-07-01 |
EP0449990A4 (en) | 1993-01-27 |
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