CA1332142C - Implantation et activation electrique de dopants dans le carbure de silicium monocristallin - Google Patents
Implantation et activation electrique de dopants dans le carbure de silicium monocristallinInfo
- Publication number
- CA1332142C CA1332142C CA 581148 CA581148A CA1332142C CA 1332142 C CA1332142 C CA 1332142C CA 581148 CA581148 CA 581148 CA 581148 A CA581148 A CA 581148A CA 1332142 C CA1332142 C CA 1332142C
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- temperature
- heating
- ion beam
- dopant ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 239000002019 doping agent Substances 0.000 title claims abstract description 46
- 238000002513 implantation Methods 0.000 title claims abstract description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 14
- 230000004913 activation Effects 0.000 title description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 103
- 238000000034 method Methods 0.000 claims abstract description 61
- 150000002500 ions Chemical class 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 238000010884 ion-beam technique Methods 0.000 claims description 26
- 239000002344 surface layer Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 4
- -1 aluminum ions Chemical class 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims 5
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 13
- 125000004429 atom Chemical group 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 19
- 230000007547 defect Effects 0.000 description 13
- 239000007943 implant Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 241000894007 species Species 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 238000005280 amorphization Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000000348 solid-phase epitaxy Methods 0.000 description 1
- 238000001894 space-charge-limited current method Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11356187A | 1987-10-26 | 1987-10-26 | |
| US113,561 | 1987-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1332142C true CA1332142C (fr) | 1994-09-27 |
Family
ID=22350145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 581148 Expired - Lifetime CA1332142C (fr) | 1987-10-26 | 1988-10-25 | Implantation et activation electrique de dopants dans le carbure de silicium monocristallin |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1332142C (fr) |
-
1988
- 1988-10-25 CA CA 581148 patent/CA1332142C/fr not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |