CA1291790C - Bypass element for safeguarding battery cells - Google Patents
Bypass element for safeguarding battery cellsInfo
- Publication number
- CA1291790C CA1291790C CA000570980A CA570980A CA1291790C CA 1291790 C CA1291790 C CA 1291790C CA 000570980 A CA000570980 A CA 000570980A CA 570980 A CA570980 A CA 570980A CA 1291790 C CA1291790 C CA 1291790C
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor
- bypass element
- battery
- battery cells
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/50—Current conducting connections for cells or batteries
- H01M50/572—Means for preventing undesired use or discharge
- H01M50/574—Devices or arrangements for the interruption of current
- H01M50/581—Devices or arrangements for the interruption of current in response to temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/50—Current conducting connections for cells or batteries
- H01M50/572—Means for preventing undesired use or discharge
- H01M50/574—Devices or arrangements for the interruption of current
- H01M50/583—Devices or arrangements for the interruption of current in response to current, e.g. fuses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
- H02J7/50—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially
- H02J7/52—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries acting upon multiple batteries simultaneously or sequentially for charge balancing, e.g. equalisation of charge between batteries
- H02J7/54—Passive balancing, e.g. using resistors or parallel MOSFETs
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
- H02J7/60—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements
- H02J7/61—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements against overcharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M2200/00—Safety devices for primary or secondary batteries
- H01M2200/10—Temperature sensitive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Connection Of Batteries Or Terminals (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Secondary Cells (AREA)
- Protection Of Static Devices (AREA)
Abstract
Abstract of the Disclosure:
The bypass element is connected in parallel with a single battery cell or a group of battery cells of a high-temperature storage battery including a plurality of series-connected electrochemical battery cells and is used both for balancing the charging state of undamaged battery cells and for the irreversible bypassing of destroyed cells which have failed with high impedence. The bypass element includes two series-connected semiconductor components, in particular semiconductor diodes, varistors or NTC resistances in each case having a different current/voltage characteristic or curve. In the event of potentiostatic overcharging of a battery cell, the first semiconductor component goes to low impedance so that the current flow necessary for charging further battery cells is determined only by the leakage current of the second semicon-ductor component. If a destroyed battery cell fails with high impedance, both semiconductor components break down and irre-versibly short-circuit the cell with a low impedance.
The bypass element is connected in parallel with a single battery cell or a group of battery cells of a high-temperature storage battery including a plurality of series-connected electrochemical battery cells and is used both for balancing the charging state of undamaged battery cells and for the irreversible bypassing of destroyed cells which have failed with high impedence. The bypass element includes two series-connected semiconductor components, in particular semiconductor diodes, varistors or NTC resistances in each case having a different current/voltage characteristic or curve. In the event of potentiostatic overcharging of a battery cell, the first semiconductor component goes to low impedance so that the current flow necessary for charging further battery cells is determined only by the leakage current of the second semicon-ductor component. If a destroyed battery cell fails with high impedance, both semiconductor components break down and irre-versibly short-circuit the cell with a low impedance.
Description
~:9:1~790 The invention relates to a bypass element ~or ~af~guarding electrochemical battery cells or grol~ps o~ several parallel-connected battery cells based on alkali metal, chalcogen and an alkali ion-conducting solid electrolyte, ~hich are connected to~ether in series to form a battery, at least one b~pass element bein8 connected in parallel with each respective series-connec~ed ~attery cell or each respective group ol ba~ery cells, the bypass ~le~lent bypassing the Cil`CUi~ of ~he cell when a predeterminable maximum ~harging capacity of the battery cèlls is reached. The bypass element is prefera~ly used in high-~emperature stora~e batteries assembled from rechargeable electrochemical storage cells.
Such a bypass element for safeguarding battery cells is known from German Patent D~-PS 2& 19 584. In that publication, the advantages and disadvantages of rechargeable electrochemical battery cells having solid electrolytes are explained. In contrast to a lead accumulator, an advantage of an electrolyte of - aluminum oxide which is used, for example, in sodium/
sulphur storage cells, is that vir~ually no self-discharging 2n occurs and that during charging no secondary reactions take place such as, for example, a water decomposition in a lead/
lead oxide system. These advantages are countered by the operating disadvantage that such cells can be neither over-charged nor discharged as is possible in the lead accumulator.
Such a bypass element for safeguarding battery cells is known from German Patent D~-PS 2& 19 584. In that publication, the advantages and disadvantages of rechargeable electrochemical battery cells having solid electrolytes are explained. In contrast to a lead accumulator, an advantage of an electrolyte of - aluminum oxide which is used, for example, in sodium/
sulphur storage cells, is that vir~ually no self-discharging 2n occurs and that during charging no secondary reactions take place such as, for example, a water decomposition in a lead/
lead oxide system. These advantages are countered by the operating disadvantage that such cells can be neither over-charged nor discharged as is possible in the lead accumulator.
-2- ~
~ 9 0 For this reas~n, the total capacity of a series circuit is determined b~- ~he cell having the lowest capacity without using bypassing means. A particularly serious problem is that storage cell~ which are used, for e~ample, with a different charging states can never be synchronized with ~he remaining string, In the lead accumulator, it: is possible to place all of the cells into the same state by overcharging - with hydro-gen/oxygen development (compensatin~ charge).
In order to counteract this different charging of the storage ~0 cells of a battery, several storage cells can first be connect-ed in parallel before several such groups of parallel-connected cells are connected in ~eries. The result is that, due to compensating currents, the same charging state occurs in all cells within a group including of several parallel-connected cells.
However, a fundamental improvement of the charging state of a battery can also not be achieved in this nlanner without using bypassing means, since the parallel block having the lowest capacity continues to determine the total capacity of the ~0 battery and the charging states of various blocks cannot be compensated. Therefore, German Patent DE-PS 28 l9 584 proposes a circuit bypassing the battery cell (n) for safeguarding storage cells, wl~ich enables each storage cell to be completely charged up to its maximum capacity and thus serves to balance the charging state of batteries. In this configuration, a l~t91~0 Zener diode is used which has a nominal voltage equal to the maxi~u~ charging voltage of the battery cell.
German Published, Non-Prosecuted Application DE-OS 35 42 838 discloses a bypass element for the irreversible short-circuiting of battery cells failing ox being destroyed with a high impedance in a battery connection having several parallel and serial individual cells or cell groups. In that configuration, a semiconductor diode is used as a voltage-sensitive element for reversing the voltage across the defective battery cell. A
battery cell goes to high impedance particularly when its solid electrolyte fractures.
It is accordingly an object of the invention to provide a bypass element for safeguarding battery cells, which overcomes the hereinafore-mentioned disadvantages of the heretofore-known devices of this general type and which can produce both a balancing of the charging state of undamaged battery cells and an irreversible bypassing of destroyed cells which fail with high impedance.
With the foregoing and other ob~ects in view there is provided, in accordance with the invention a bypass element for a ;battery having a plurality of series-connected groups of electrochemical battery cells, each group having a plurality of parallel-connected branches of battery cells based on alkali metall chalcogen and an alkali ion-conducting solid electrolyte, the bypass element being connected in parallel with each respective battery cell or with each respective group of battery 1~.91'790 27363-lq cell~ for safeguarding the battery cells by bypassing the cells when a predeterminable maximum charging capacity of the battery cells is reached, said bypass element comprising a series-connection of first and second semiconductor components, said components being capable of assuming a high-impedance and a low-impedance state with dlfferent current~voltage characteristics in response to current or voltage applied to the cell, said first semiconductor component having a lower leakage current in the high-impedance state than said second semiconductor component, said second semiconductor component changing from the high-impedance to the low-impedance state at a higher voltage or higher current than said first semiconductor component r and said first semiconductor component changing from the high-impedance to the low-impedance state exactly when a maximum charging voltage of the battery cell or of the group of battery cells is reached, including a housing formed of an electrically conductive material, a fusible component disposed in said housing along with said semiconductor components, and positive and negative electrical connecting elements connected to said housing, each of said semlconductor components having first and second connecting terminals, the housing including an electrically conducting contact element in the form of a spring electrically conductively connecting said first connecting terminal of said first semiconductor component through said housing to said negative connecting elements of said housing, the housing further including a rod-shaped internal conductor directly electrically conductively : 5 l~gl~90 connecting said second connecting terminal of said second semiconductor component to said positive connecting element of said housing, and said second connecting terminal of said first semiconductor component being electrically conductively connected to said first connecting terminal of said second semiconductor component.
The advantages which can be achieved by means of the invention are particularly that the bypass element provides the possibility both of complete charging of all battery cells of a high-temperature storage battery and of bypassing a defective battery cell. The bypass element virtually represents a combined element for balancing and irreversible bypassing. Nevertheless, the bypass element is of very simple and space-saving construction, can be produced inexpensively and has a thermal stability which is also required with respect to 5a 1~.917~0 the high continuous operating temperature of hi~ temperature ba.teries~
In accordance with another f~a~ure of the invention, the semiconduccor components are semiconductor diodes.
!
In accordance with a furtl~er feature ol the invention, the semiconductol- components are varistors~
In accordance with an added fea~ure of the inven~ion, the semiconductor components are NTC resistances~
In accordance with an additional feature or the invention, 10 there is provided a a housing formed of an electrically conduc-tive material, a fusible component disposed in the housing along with the semiconductor components, and positive and negative electrical connecting elements connected to the housing t each of the semiconductor components having first and second connecting terminals, the first connectin~ terminal of th~ first semiconductor component and the second connectin~ :
~terminal of the second semiconductor component each being electrically conductively connected to a respective one of the connecting elements, and the second connecting terminal of the .2~ first semiconductor component being electrically conductively connected to the first connecting terminal of the second semiconductor component.
In accordance with yet another feature of the invention, there is provided ~ an electrically conductin~ con.act element in ~he forM of a spring electric~liy conductively conneccing the first conrlecting terminal or the ~irst semiconductor ccmponent ~hrough the housing to ~he rexpective one of ~he connecting e~ements.
ln accol-dance with yet a further feature of the inventioll, ~here is provided a a rod-shaped internal conduc~or directly electrically conductively connecting the second connecting 1~ terminal of the second semiconductor component ~o the positive connecting elenient or electrically conductively connecting the second connecting terminal of the second semiconductor compo-ent through the fusible component to the positive connectingelement.
In accordance with yet an added feature of the invention, there is provided a a temperature-resistant fused glass inclusion closing the hou~ing~
In accordance with yet an additional feature of the invention, the semiconductor components are at least partially disposed in 2n a recess formed in the fusible component.
In accordance with a concomitant feature of the invention, the ~wo serially-connected diodes are monolithically integrated on one semiconductor chip.
~.?t~1~790 O~i~er reatures which ar~ considered as characL~ris~ic for the inventloll are set orth in the appendeà claims.
Although the invention is illustrated and describe~ herei~ as embodied in a bypass ei~ent for sa~`eguarding b~ttery cells, it is nevertheless not intended to be limited to th~ details showll, since ~arious modifications and s~ructu~-al changes n~ay be made therein without departing from the spirit of the invention and within ~he scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
I
Fig. 1 is a fragmentary, diagrammatic, cross-sectional view of `' a balancing bypass element;
Fig. 2 is a schematic circuit diagram showing the connection of the balancing bypass element to a battery cell;
: .
Fig. 3 is a diagrammatic and schematic view of a series circuit 2~ o~ three battery cells with which three balancing bypass :: elements are connected in parallel;
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: -8-~t9~790 Fig~ 4 is a schematic circuit diagram showing the s~ructure of a hi~h-temperature storag~ b~cteryi and Fig. 5 1~ a graph showing the current/voltage characteristic of ~he balancing b~pass elenl~nt.
Referring now to the figures of the drawings in detail and ~irsc~ par~iculari~, to ~ig. 1 thereof, th~re is seen a balancing bypass element 1. The bypass element 1 has two disc-shaped semiconductor components 2 and 3 which are located one above the another. Diodes are preferably used as the ln semiconductor components (the cachode ol ~he component 2 and the anoce of the component 3 are in contact with one another).
The two semiconductor components 2, 3 are located in a recess 4 formed in a disc-shaped metallic contact disc 5 (which is preferably form~d of copper), in such a way that the lower surface of the semiconductor component 3 (which is the cathode) is in contact with the contact disc 5. A metallic contact spring 6 (su~h as a leaf spring) presses against the top (which is the anode) of the semiconductor component 2. The contact spring 6 is supported in a recess 7 formed in a metallic housing 8. A rod-shaped negative conrlecting element 9 is ~; connected to the top of the housing.
I
A rod-shaped internal conductor 10 pro~ruding past the housing ; is integral with or formed on the contact disc 5. A glass seal ~ or fused glass inclusion 11 and a sealing insulating sheath or slee~e 12 are located betwee~l the rod-shaped internal conductor 10 anà ~he housing 8~ The glass seal or fused glass inciusion 11 is closed off ~rom the outside by means ot an insulating disc 13. A positive connecting element 14 is placed orlto the end o~ the rod-shaped in~ernal conductor 10 and a ne~ative com~ecting element 9 is piaced onto the metallic housing 8.
Fig~ ~ shows the connection of a balancing bypass element to a battery cell, in the from of` an electro-chemical storage cell 15 of a high-temperature storage battery. The negative con- 3 1~ nec~ing element 9 o~ the bypass element 1 is connecteà to the negative pole and the positive connecting element 14 is con-nected to the positive pole of the battery cell 15. The bypass element 1 is shown as series-circuit of the two semiconductor components 2, 3, which are illustrated as semiconductor diodes.
The internal impedance of the battery cell 15 is designated by re~erence symbol Ri. The EM~ of the battery cell 15 is, for example, 2 volts.
Fig~ 3 illuserates a series circuit of three battery cells (electro-chemical storage cells) with which three balancing 2n bypass elements are connected in parallel. The battery cells 16, 17, 18 which are shown diagrammatically, belong to a non-illustrated high-temperature storage battery. Each of the battery cells 16, 17, 18 is bounded towards the outside by a metallic housing 19 within which a cup-shaped solid electrolyte 20 i~ disposed. This electrolyte is produced of betaaluminium 9~
oxide and separates tw~ reactand spaces 21 and 22 from each other~ ~he internal area of che solid electrolyte 20 is used as anode space ~1 and is filled with sodium, while the cathode space ~2 whieh contains sulphur is provided between the metal-lic housing i~ and the solid electrolyte 20~ Current collec-tors 23 and 24 respectively project into the reactand spaces 21 and 2~ As is shown in Fig~ 3, the current collector 23 projectin~ inco the solid elec~roly~e 20 of the battery cell 1 is connec~ed through an electric conductor 25 to the current lP collector 24 wllich projects into the cathode space 22 of the adjacent battery cell 17. At the same time, the current collector 23 is connected to the positive connecting elemen~ 14 of the bypass element 1 which is connected in parallel with the next storage cell. The current collector 24 of the battery cell 18 is electrically conductively connected to the ne~ative connecting element 9 of the bypass element 1. The bypass elements 1 which are connected in parallel with the remaining battery cells, are connected to the remaining battery cells in :~ a corresponding manner.
; 20 Fig. 4 diagrammatic illustrates the structure of a high-temperature storage battery. The battery is formed of p :series-connec~ed blocks, each block having m parallel branches whlch in each case~is formed of of n series-connected battery cells. The external connecting poles of the battery are 3 designated by reference numerals 26, 27. Following the de-scription of the construction of a bypass element, the : :~
~?.9~Q
constructiorl of a high-temperature storage battery and the cor~r.~c~ion O1 a battery ceil to a bypas~ e~lement, the operatior of a bypa~s element will be explained as foliows. For this purpose, rer`~rence is made to Fig. 5. `.
i Fig. 5 shows the current/voltage characteristic or curve of the balancing bypass elem~nt. This characteristic is obtained by a ~rie~ c~nnection of tWQ semiconductor componerlt~ in the torm of diodes, in each case having a difr`erent breakdown voltage (reverse voltage) and in each case having a different 1~ leahage current (reverse current). The breakdown ~oltage of the lirst semiconductor component 2 is, for example, URmax = -3 volts, the leakage current is, for example, IS2 = - 3 milliamperes, the breakdown voltage of the second semiconductor component 3 is, for example, URmax3 = - 12 volts, the leakage current is, for example, I53 = 10 milliamperes. Quadrant I of Fig. 5 shows the branch of the characteristic or curve which applies to a defective battery cell 15 (for exanlple having a high impedance due to a fracture of the solid electrolyte) and quadrant II shows the branch of the characteristic or curve ', which applies to an undamaged battery cell.
:~ I
In the text which follows, quadrant II of the characteristic or curve according to ~`ig. 5 will be considered first, and in particular in order to explain the behavior of the bypass element 1 with potentiostatic overcharging, In order to charge ~he empty battery cells of the high-temperature storage battery 1?~917~0 according to Fig~ 4, a current source which supplies the charging current is connected to the external connecting poles 2~, 2/ of the battery. The semiconductor componerts 2, 3 of the bypass elements lo~ated in parallel with the cells are in a blocking condition so that no current flows through the bypass elements. When the voltage of the battery cell has reached a value of, for example, ~ volts (which is the E~lF of the battery cell) they are charged ~o th~ir maximum capacity. ~ue to the charging, the cells have gone to high impedance, that is to say ln the curr~nt flowing through them becomes considerably less.
Since the curr~nt flowing through the charged cells is very small, the consequence is that other cells which are in series with the charged cells and have not yet been completely charged to their maximum capacity are not charged further. In other words, in a series circuit without bypassing means, the cell or the group of cells having the lowest capacity determines the total capacity of all of the cells of the battery~
Complete charging of all series-connected cells or groups of parallel-connected cells is made possible by connecting the 2~ bypass elements in parallel wich the battery cells. The breakdown voltage of the flrst semiconductor component 2 exactly corresponds to the maximum charging voltage of a cell or to the maximum charging voltage of the cells of a group. If the cell or the cells of a group have reached a voltage of, ~`or example, - 3 volts during the char~ing (potentiostatic over-chargingj, the first semiconductor componetlt 2 (reverse voltage ~-13-~2:917~0 U~n~a~ 3 volt) brea~s down and the reverse current Is3 ofthe second semiconductor component wi~h VR~ax3 = - 12 volts then determines the reverse current contributing to the charge compensation. ln o~her words, the current necessary for the further chargin~ of cells not ye~ exhibiting their maximum capacity then no longer flows through the ~attery c~li which is already comple~ely char~ed but only throu~h the parallel bypass element~ The circuit of the cells already charged can thus be bypassed until all of the ceils of the battery are charged up 1~ to their maximum capacity. After the overvoltage across the overcharged cell has been removed, the current drops from the value of the r~verse current Is3 back to the very low value of the leakage current IS2 of the first semiconductor component 2, that is to say the bypass element becomes free or almost free '`
of current again.
In the text which follows, quadrant I of the characteristic or curve according to Fig. 5 is considered, that is to say the behavior of the bypass element with a high-impedance failure of a destroyed battery cell is explained. In the case of sodi-2n ~m/sulphur battery cells (see ~'ig. 3)~ it has been found thatsuch a defect occurs in most cases due to the fact that the solid electrolyte becomes cracked so that the reaction sub-stances of sodium and sulphur can react directly with one another. The battery cell then no longer produces a voltage and exhibits a large internal resistance which, in most cases, is greater by a factor of 2 than the ohmic resistance of an ~1 790 undamaged ~attery cell. The consequence o~ this is that only avery low or no charging or discharging current flows throu~h the brarlch having the defective battery cell~ If ~he impedance of the de~ective battery cell is very high, the branch in which the battery cell is disposed completely fails for the power supply~ This means that the capacity of the total battery under these conditions is less by a factor of (m - l)/m than ~hat of an undamaged battery ~see also Fig~ 4)~
If a battery cell which has been destroyed, for example, due to 1 the rracture of its solid electrolyte, goes to high impedance, this means tha~ the polarity of the voltages at its current collectors 23 and 24 is reversed (voltage reversal). This also results in a polarity reversal of the voltage across the electric connecting elements 9 and 14 of the respective bypass element 1. The current then no longer f`lows through the battery cell but is taken over by the bypass element 1. The semiconductor components 2, 3 (diodes) disposed in the bypass element 1 ar~ connected through their connecting terminals to ` the connecting elements 9 and 14 in such a manner that the2~ bypass element is polarized in the direction of conduction, that is to say a large current can flow through it. This high ` current results in a great temperature increase within the ` semlconductor components 2, 3 which leads to a break down of the semiconductor components operated in the direction of :: .
conduction so that a permanently large current path is formed through the bypass element 1. The metallic contact disc 5 is :~ :
~:: ~ : :
~:~
~9~7~0 also fu~ed so that an optimum electrically conduc~ive contactis formed between the contact disc 5 and the semiconductor components 2, 3~ The defective battery cell is irreversibly short-circuited in this manner with a low impedance and does not impede the charging and discharging of the undamaged battery cells.
~onolithic integration of the two serially-connected semicon-ductor components 2, 3 (diodes) in one chip is possible.
Compared with a pure bypass element having only one semiconduc-1~ tor component, an essential advantage of the combined elementis the feature that unbalances due to the stray and temperature-dependent reverse currents of only one semiconduc- !
tor component (semiconductor diode) in the bypass element, are I .
compensated.
As has already been mentioned, semiconductor diodes are prefer-ably used as the sem1conductor components 2, 3. However, varistors (variable resistors which are semiconductors having resistances that decrease with increasing voltage) and NTC
resistances tnegative temperature coefficient resistances which : 20 are semiconductor resistances having resistances t~at decrease with heating, for example due to the passage of current, such as thermistors) can also be used. Even when varistors or NTC
res1stances are used, it is essential that two semiconductor co~ponents having differen~ current~volta~e characceristics or curves are combined in each case to achieve a characteristic similar to that shown il1 Fig. 5.
;: :
-17- :
~ 9 0 For this reas~n, the total capacity of a series circuit is determined b~- ~he cell having the lowest capacity without using bypassing means. A particularly serious problem is that storage cell~ which are used, for e~ample, with a different charging states can never be synchronized with ~he remaining string, In the lead accumulator, it: is possible to place all of the cells into the same state by overcharging - with hydro-gen/oxygen development (compensatin~ charge).
In order to counteract this different charging of the storage ~0 cells of a battery, several storage cells can first be connect-ed in parallel before several such groups of parallel-connected cells are connected in ~eries. The result is that, due to compensating currents, the same charging state occurs in all cells within a group including of several parallel-connected cells.
However, a fundamental improvement of the charging state of a battery can also not be achieved in this nlanner without using bypassing means, since the parallel block having the lowest capacity continues to determine the total capacity of the ~0 battery and the charging states of various blocks cannot be compensated. Therefore, German Patent DE-PS 28 l9 584 proposes a circuit bypassing the battery cell (n) for safeguarding storage cells, wl~ich enables each storage cell to be completely charged up to its maximum capacity and thus serves to balance the charging state of batteries. In this configuration, a l~t91~0 Zener diode is used which has a nominal voltage equal to the maxi~u~ charging voltage of the battery cell.
German Published, Non-Prosecuted Application DE-OS 35 42 838 discloses a bypass element for the irreversible short-circuiting of battery cells failing ox being destroyed with a high impedance in a battery connection having several parallel and serial individual cells or cell groups. In that configuration, a semiconductor diode is used as a voltage-sensitive element for reversing the voltage across the defective battery cell. A
battery cell goes to high impedance particularly when its solid electrolyte fractures.
It is accordingly an object of the invention to provide a bypass element for safeguarding battery cells, which overcomes the hereinafore-mentioned disadvantages of the heretofore-known devices of this general type and which can produce both a balancing of the charging state of undamaged battery cells and an irreversible bypassing of destroyed cells which fail with high impedance.
With the foregoing and other ob~ects in view there is provided, in accordance with the invention a bypass element for a ;battery having a plurality of series-connected groups of electrochemical battery cells, each group having a plurality of parallel-connected branches of battery cells based on alkali metall chalcogen and an alkali ion-conducting solid electrolyte, the bypass element being connected in parallel with each respective battery cell or with each respective group of battery 1~.91'790 27363-lq cell~ for safeguarding the battery cells by bypassing the cells when a predeterminable maximum charging capacity of the battery cells is reached, said bypass element comprising a series-connection of first and second semiconductor components, said components being capable of assuming a high-impedance and a low-impedance state with dlfferent current~voltage characteristics in response to current or voltage applied to the cell, said first semiconductor component having a lower leakage current in the high-impedance state than said second semiconductor component, said second semiconductor component changing from the high-impedance to the low-impedance state at a higher voltage or higher current than said first semiconductor component r and said first semiconductor component changing from the high-impedance to the low-impedance state exactly when a maximum charging voltage of the battery cell or of the group of battery cells is reached, including a housing formed of an electrically conductive material, a fusible component disposed in said housing along with said semiconductor components, and positive and negative electrical connecting elements connected to said housing, each of said semlconductor components having first and second connecting terminals, the housing including an electrically conducting contact element in the form of a spring electrically conductively connecting said first connecting terminal of said first semiconductor component through said housing to said negative connecting elements of said housing, the housing further including a rod-shaped internal conductor directly electrically conductively : 5 l~gl~90 connecting said second connecting terminal of said second semiconductor component to said positive connecting element of said housing, and said second connecting terminal of said first semiconductor component being electrically conductively connected to said first connecting terminal of said second semiconductor component.
The advantages which can be achieved by means of the invention are particularly that the bypass element provides the possibility both of complete charging of all battery cells of a high-temperature storage battery and of bypassing a defective battery cell. The bypass element virtually represents a combined element for balancing and irreversible bypassing. Nevertheless, the bypass element is of very simple and space-saving construction, can be produced inexpensively and has a thermal stability which is also required with respect to 5a 1~.917~0 the high continuous operating temperature of hi~ temperature ba.teries~
In accordance with another f~a~ure of the invention, the semiconduccor components are semiconductor diodes.
!
In accordance with a furtl~er feature ol the invention, the semiconductol- components are varistors~
In accordance with an added fea~ure of the inven~ion, the semiconductor components are NTC resistances~
In accordance with an additional feature or the invention, 10 there is provided a a housing formed of an electrically conduc-tive material, a fusible component disposed in the housing along with the semiconductor components, and positive and negative electrical connecting elements connected to the housing t each of the semiconductor components having first and second connecting terminals, the first connectin~ terminal of th~ first semiconductor component and the second connectin~ :
~terminal of the second semiconductor component each being electrically conductively connected to a respective one of the connecting elements, and the second connecting terminal of the .2~ first semiconductor component being electrically conductively connected to the first connecting terminal of the second semiconductor component.
In accordance with yet another feature of the invention, there is provided ~ an electrically conductin~ con.act element in ~he forM of a spring electric~liy conductively conneccing the first conrlecting terminal or the ~irst semiconductor ccmponent ~hrough the housing to ~he rexpective one of ~he connecting e~ements.
ln accol-dance with yet a further feature of the inventioll, ~here is provided a a rod-shaped internal conduc~or directly electrically conductively connecting the second connecting 1~ terminal of the second semiconductor component ~o the positive connecting elenient or electrically conductively connecting the second connecting terminal of the second semiconductor compo-ent through the fusible component to the positive connectingelement.
In accordance with yet an added feature of the invention, there is provided a a temperature-resistant fused glass inclusion closing the hou~ing~
In accordance with yet an additional feature of the invention, the semiconductor components are at least partially disposed in 2n a recess formed in the fusible component.
In accordance with a concomitant feature of the invention, the ~wo serially-connected diodes are monolithically integrated on one semiconductor chip.
~.?t~1~790 O~i~er reatures which ar~ considered as characL~ris~ic for the inventloll are set orth in the appendeà claims.
Although the invention is illustrated and describe~ herei~ as embodied in a bypass ei~ent for sa~`eguarding b~ttery cells, it is nevertheless not intended to be limited to th~ details showll, since ~arious modifications and s~ructu~-al changes n~ay be made therein without departing from the spirit of the invention and within ~he scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
I
Fig. 1 is a fragmentary, diagrammatic, cross-sectional view of `' a balancing bypass element;
Fig. 2 is a schematic circuit diagram showing the connection of the balancing bypass element to a battery cell;
: .
Fig. 3 is a diagrammatic and schematic view of a series circuit 2~ o~ three battery cells with which three balancing bypass :: elements are connected in parallel;
.
: -8-~t9~790 Fig~ 4 is a schematic circuit diagram showing the s~ructure of a hi~h-temperature storag~ b~cteryi and Fig. 5 1~ a graph showing the current/voltage characteristic of ~he balancing b~pass elenl~nt.
Referring now to the figures of the drawings in detail and ~irsc~ par~iculari~, to ~ig. 1 thereof, th~re is seen a balancing bypass element 1. The bypass element 1 has two disc-shaped semiconductor components 2 and 3 which are located one above the another. Diodes are preferably used as the ln semiconductor components (the cachode ol ~he component 2 and the anoce of the component 3 are in contact with one another).
The two semiconductor components 2, 3 are located in a recess 4 formed in a disc-shaped metallic contact disc 5 (which is preferably form~d of copper), in such a way that the lower surface of the semiconductor component 3 (which is the cathode) is in contact with the contact disc 5. A metallic contact spring 6 (su~h as a leaf spring) presses against the top (which is the anode) of the semiconductor component 2. The contact spring 6 is supported in a recess 7 formed in a metallic housing 8. A rod-shaped negative conrlecting element 9 is ~; connected to the top of the housing.
I
A rod-shaped internal conductor 10 pro~ruding past the housing ; is integral with or formed on the contact disc 5. A glass seal ~ or fused glass inclusion 11 and a sealing insulating sheath or slee~e 12 are located betwee~l the rod-shaped internal conductor 10 anà ~he housing 8~ The glass seal or fused glass inciusion 11 is closed off ~rom the outside by means ot an insulating disc 13. A positive connecting element 14 is placed orlto the end o~ the rod-shaped in~ernal conductor 10 and a ne~ative com~ecting element 9 is piaced onto the metallic housing 8.
Fig~ ~ shows the connection of a balancing bypass element to a battery cell, in the from of` an electro-chemical storage cell 15 of a high-temperature storage battery. The negative con- 3 1~ nec~ing element 9 o~ the bypass element 1 is connecteà to the negative pole and the positive connecting element 14 is con-nected to the positive pole of the battery cell 15. The bypass element 1 is shown as series-circuit of the two semiconductor components 2, 3, which are illustrated as semiconductor diodes.
The internal impedance of the battery cell 15 is designated by re~erence symbol Ri. The EM~ of the battery cell 15 is, for example, 2 volts.
Fig~ 3 illuserates a series circuit of three battery cells (electro-chemical storage cells) with which three balancing 2n bypass elements are connected in parallel. The battery cells 16, 17, 18 which are shown diagrammatically, belong to a non-illustrated high-temperature storage battery. Each of the battery cells 16, 17, 18 is bounded towards the outside by a metallic housing 19 within which a cup-shaped solid electrolyte 20 i~ disposed. This electrolyte is produced of betaaluminium 9~
oxide and separates tw~ reactand spaces 21 and 22 from each other~ ~he internal area of che solid electrolyte 20 is used as anode space ~1 and is filled with sodium, while the cathode space ~2 whieh contains sulphur is provided between the metal-lic housing i~ and the solid electrolyte 20~ Current collec-tors 23 and 24 respectively project into the reactand spaces 21 and 2~ As is shown in Fig~ 3, the current collector 23 projectin~ inco the solid elec~roly~e 20 of the battery cell 1 is connec~ed through an electric conductor 25 to the current lP collector 24 wllich projects into the cathode space 22 of the adjacent battery cell 17. At the same time, the current collector 23 is connected to the positive connecting elemen~ 14 of the bypass element 1 which is connected in parallel with the next storage cell. The current collector 24 of the battery cell 18 is electrically conductively connected to the ne~ative connecting element 9 of the bypass element 1. The bypass elements 1 which are connected in parallel with the remaining battery cells, are connected to the remaining battery cells in :~ a corresponding manner.
; 20 Fig. 4 diagrammatic illustrates the structure of a high-temperature storage battery. The battery is formed of p :series-connec~ed blocks, each block having m parallel branches whlch in each case~is formed of of n series-connected battery cells. The external connecting poles of the battery are 3 designated by reference numerals 26, 27. Following the de-scription of the construction of a bypass element, the : :~
~?.9~Q
constructiorl of a high-temperature storage battery and the cor~r.~c~ion O1 a battery ceil to a bypas~ e~lement, the operatior of a bypa~s element will be explained as foliows. For this purpose, rer`~rence is made to Fig. 5. `.
i Fig. 5 shows the current/voltage characteristic or curve of the balancing bypass elem~nt. This characteristic is obtained by a ~rie~ c~nnection of tWQ semiconductor componerlt~ in the torm of diodes, in each case having a difr`erent breakdown voltage (reverse voltage) and in each case having a different 1~ leahage current (reverse current). The breakdown ~oltage of the lirst semiconductor component 2 is, for example, URmax = -3 volts, the leakage current is, for example, IS2 = - 3 milliamperes, the breakdown voltage of the second semiconductor component 3 is, for example, URmax3 = - 12 volts, the leakage current is, for example, I53 = 10 milliamperes. Quadrant I of Fig. 5 shows the branch of the characteristic or curve which applies to a defective battery cell 15 (for exanlple having a high impedance due to a fracture of the solid electrolyte) and quadrant II shows the branch of the characteristic or curve ', which applies to an undamaged battery cell.
:~ I
In the text which follows, quadrant II of the characteristic or curve according to ~`ig. 5 will be considered first, and in particular in order to explain the behavior of the bypass element 1 with potentiostatic overcharging, In order to charge ~he empty battery cells of the high-temperature storage battery 1?~917~0 according to Fig~ 4, a current source which supplies the charging current is connected to the external connecting poles 2~, 2/ of the battery. The semiconductor componerts 2, 3 of the bypass elements lo~ated in parallel with the cells are in a blocking condition so that no current flows through the bypass elements. When the voltage of the battery cell has reached a value of, for example, ~ volts (which is the E~lF of the battery cell) they are charged ~o th~ir maximum capacity. ~ue to the charging, the cells have gone to high impedance, that is to say ln the curr~nt flowing through them becomes considerably less.
Since the curr~nt flowing through the charged cells is very small, the consequence is that other cells which are in series with the charged cells and have not yet been completely charged to their maximum capacity are not charged further. In other words, in a series circuit without bypassing means, the cell or the group of cells having the lowest capacity determines the total capacity of all of the cells of the battery~
Complete charging of all series-connected cells or groups of parallel-connected cells is made possible by connecting the 2~ bypass elements in parallel wich the battery cells. The breakdown voltage of the flrst semiconductor component 2 exactly corresponds to the maximum charging voltage of a cell or to the maximum charging voltage of the cells of a group. If the cell or the cells of a group have reached a voltage of, ~`or example, - 3 volts during the char~ing (potentiostatic over-chargingj, the first semiconductor componetlt 2 (reverse voltage ~-13-~2:917~0 U~n~a~ 3 volt) brea~s down and the reverse current Is3 ofthe second semiconductor component wi~h VR~ax3 = - 12 volts then determines the reverse current contributing to the charge compensation. ln o~her words, the current necessary for the further chargin~ of cells not ye~ exhibiting their maximum capacity then no longer flows through the ~attery c~li which is already comple~ely char~ed but only throu~h the parallel bypass element~ The circuit of the cells already charged can thus be bypassed until all of the ceils of the battery are charged up 1~ to their maximum capacity. After the overvoltage across the overcharged cell has been removed, the current drops from the value of the r~verse current Is3 back to the very low value of the leakage current IS2 of the first semiconductor component 2, that is to say the bypass element becomes free or almost free '`
of current again.
In the text which follows, quadrant I of the characteristic or curve according to Fig. 5 is considered, that is to say the behavior of the bypass element with a high-impedance failure of a destroyed battery cell is explained. In the case of sodi-2n ~m/sulphur battery cells (see ~'ig. 3)~ it has been found thatsuch a defect occurs in most cases due to the fact that the solid electrolyte becomes cracked so that the reaction sub-stances of sodium and sulphur can react directly with one another. The battery cell then no longer produces a voltage and exhibits a large internal resistance which, in most cases, is greater by a factor of 2 than the ohmic resistance of an ~1 790 undamaged ~attery cell. The consequence o~ this is that only avery low or no charging or discharging current flows throu~h the brarlch having the defective battery cell~ If ~he impedance of the de~ective battery cell is very high, the branch in which the battery cell is disposed completely fails for the power supply~ This means that the capacity of the total battery under these conditions is less by a factor of (m - l)/m than ~hat of an undamaged battery ~see also Fig~ 4)~
If a battery cell which has been destroyed, for example, due to 1 the rracture of its solid electrolyte, goes to high impedance, this means tha~ the polarity of the voltages at its current collectors 23 and 24 is reversed (voltage reversal). This also results in a polarity reversal of the voltage across the electric connecting elements 9 and 14 of the respective bypass element 1. The current then no longer f`lows through the battery cell but is taken over by the bypass element 1. The semiconductor components 2, 3 (diodes) disposed in the bypass element 1 ar~ connected through their connecting terminals to ` the connecting elements 9 and 14 in such a manner that the2~ bypass element is polarized in the direction of conduction, that is to say a large current can flow through it. This high ` current results in a great temperature increase within the ` semlconductor components 2, 3 which leads to a break down of the semiconductor components operated in the direction of :: .
conduction so that a permanently large current path is formed through the bypass element 1. The metallic contact disc 5 is :~ :
~:: ~ : :
~:~
~9~7~0 also fu~ed so that an optimum electrically conduc~ive contactis formed between the contact disc 5 and the semiconductor components 2, 3~ The defective battery cell is irreversibly short-circuited in this manner with a low impedance and does not impede the charging and discharging of the undamaged battery cells.
~onolithic integration of the two serially-connected semicon-ductor components 2, 3 (diodes) in one chip is possible.
Compared with a pure bypass element having only one semiconduc-1~ tor component, an essential advantage of the combined elementis the feature that unbalances due to the stray and temperature-dependent reverse currents of only one semiconduc- !
tor component (semiconductor diode) in the bypass element, are I .
compensated.
As has already been mentioned, semiconductor diodes are prefer-ably used as the sem1conductor components 2, 3. However, varistors (variable resistors which are semiconductors having resistances that decrease with increasing voltage) and NTC
resistances tnegative temperature coefficient resistances which : 20 are semiconductor resistances having resistances t~at decrease with heating, for example due to the passage of current, such as thermistors) can also be used. Even when varistors or NTC
res1stances are used, it is essential that two semiconductor co~ponents having differen~ current~volta~e characceristics or curves are combined in each case to achieve a characteristic similar to that shown il1 Fig. 5.
;: :
-17- :
Claims (7)
1. Bypass element for a battery having a plurality of series-connected groups of electrochemical battery cells, each group having a plurality of parallel-connected branches of battery cells based on alkali metal, chalcogen and an alkali ion-conducting solid electrolyte, the bypass element being connected in parallel with each respective battery cell or with each respective group of battery cells for safeguarding the battery cells by bypassing the cells when a predeterminable maximum charging capacity of the battery cells is reached, said bypass element comprising a series-connection of first and second semiconductor components, said components being capable of assuming a high-impedance and a low-impedance state with different current/voltage characteristics in response to current or voltage applied to the cell, said first semiconductor component having a lower leakage current in the high-impedance state than said second semiconductor component, said second semiconductor component changing from the high-impedance to the low-impedance state at a higher voltage or higher current than said first semiconductor component, and said first semiconductor component changing from the high-impedance to the low-impedance state exactly when a maximum charging voltage of the battery cell or of the group of battery cells is reached, including a housing formed of an electrically conductive material, a fusible component disposed in said housing along with said semiconductor components, and positive and negative electrical connecting elements connected to said housing, each of said semiconductor components having first and second connecting terminals, the housing including an electrically conducting contact element in the form of a spring electrically conductively connecting said first connecting terminal of said first semiconductor component through said housing to said negative connecting elements of said housing, the housing further including a rod-shaped internal conductor directly electrically conductively connecting said second connecting terminal of said second semiconductor component to said positive connecting element of said housing, and said second connecting terminal of said first semiconductor component being electrically conductively connected to said first connecting terminal of said second semiconductor component.
2. Bypass element according to claim 1, wherein said semiconductor components are semiconductor diodes.
3. Bypass element according to claim 2, wherein said two serially-connected diodes are monolithically integrated on one semiconductor chip.
4. Bypass element according to claim 1, wherein said semiconductor components are varistors.
5. Bypass element according to claim 1, wherein said semiconductor components are negative temperature coefficient resistors.
6. Bypass element according to claim 1, including a temperature-resistant fused glass inclusion sealing said housing.
7. Bypass element according to claim 1, wherein said semiconductor components are at least partially disposed in a recess formed in said fusible component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873721754 DE3721754A1 (en) | 1987-07-01 | 1987-07-01 | BRIDGE ELEMENT FOR SECURING BATTERY CELLS |
| DEP3721754.2 | 1987-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1291790C true CA1291790C (en) | 1991-11-05 |
Family
ID=6330693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000570980A Expired - Lifetime CA1291790C (en) | 1987-07-01 | 1988-06-30 | Bypass element for safeguarding battery cells |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4879188A (en) |
| EP (1) | EP0297421B1 (en) |
| JP (1) | JPS6423727A (en) |
| CA (1) | CA1291790C (en) |
| DE (2) | DE3721754A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10763595B1 (en) | 2015-11-20 | 2020-09-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Electrical bridging device for bridging electrical components, in particular an energy source or an energy consumer |
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| DE3938262A1 (en) * | 1989-11-17 | 1991-05-23 | Asea Brown Boveri | PROTECTIVE DEVICE FOR HIGH TEMPERATURE BATTERIES |
| US5825155A (en) * | 1993-08-09 | 1998-10-20 | Kabushiki Kaisha Toshiba | Battery set structure and charge/ discharge control apparatus for lithium-ion battery |
| DE4409268C1 (en) * | 1994-03-18 | 1995-06-22 | Daimler Benz Ag | Electrochemical storage battery for electric vehicle |
| ZA947113B (en) * | 1994-04-13 | 1995-05-26 | Rolf Dr Zinniker | Battery recharging circuit |
| US6060864A (en) * | 1994-08-08 | 2000-05-09 | Kabushiki Kaisha Toshiba | Battery set structure and charge/discharge control apparatus for lithium-ion battery |
| DE19509075C2 (en) * | 1995-03-14 | 1998-07-16 | Daimler Benz Ag | Protective element for an electrochemical memory and method for its production |
| US5683827A (en) * | 1995-11-20 | 1997-11-04 | Mobius Green Energy, Inc. | Protective device for protecting individual battery cells in a batterypack from damages and hazards caused by reverse polarity during discharge cycles |
| US6037071A (en) * | 1996-04-10 | 2000-03-14 | Duracell Inc | Current interrupter for electrochemical cells |
| JPH1118322A (en) * | 1997-06-24 | 1999-01-22 | Okamura Kenkyusho:Kk | Parallel monitor with turn-on function |
| US6083639A (en) * | 1997-08-22 | 2000-07-04 | Duracell Inc. | Current interrupter for electrochemical cells |
| CN1142605C (en) * | 1997-08-22 | 2004-03-17 | 杜拉塞尔公司 | Electrochemical cell and current interrupter therefor |
| JPH11191436A (en) * | 1997-12-26 | 1999-07-13 | Hitachi Ltd | Storage protector |
| US6157167A (en) * | 1998-04-29 | 2000-12-05 | The Johns Hopkins University | Topology for individual battery cell charge control in a rechargeable battery cell array |
| US6175214B1 (en) * | 1998-10-14 | 2001-01-16 | Raytheon Company | High voltage power supply using thin metal film batteries |
| JP2005044626A (en) * | 2003-07-22 | 2005-02-17 | Sanyo Gs Soft Energy Co Ltd | Battery |
| JP2005267886A (en) * | 2004-03-16 | 2005-09-29 | Nissan Motor Co Ltd | Secondary battery |
| DE102009005228A1 (en) * | 2009-01-20 | 2010-07-22 | Li-Tec Battery Gmbh | Protective device for galvanic cells |
| JP5582898B2 (en) * | 2010-07-13 | 2014-09-03 | 株式会社Ｎｔｔファシリティーズ | Lithium ion battery system |
| DE102012005979B4 (en) | 2012-03-23 | 2013-11-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electric bridging element and energy storage with the bridging element |
| DE102012215620A1 (en) | 2012-09-04 | 2014-03-06 | Robert Bosch Gmbh | Lithium ion battery system for vehicles e.g. motor car, has battery modules connected with case of battery cell in series, switching unit switching battery modules and battery cell, and terminals connected with another switching unit |
| SE537191C2 (en) * | 2013-05-31 | 2015-03-03 | Scania Cv Ab | Intrinsic overload protection for battery cell |
| EP2863454A1 (en) * | 2013-10-16 | 2015-04-22 | Siemens Aktiengesellschaft | Electrochemical energy storage device with voltage-dependent intermediate layer |
| DE102014107287A1 (en) | 2014-05-23 | 2015-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device and method for bridging an electrical energy storage device |
| CN104635535B (en) * | 2014-12-22 | 2018-01-23 | 联想(北京)有限公司 | A kind of electronic equipment and control method |
| US10050252B2 (en) * | 2015-04-17 | 2018-08-14 | The Boeing Company | Fault tolerant battery cell bypass device and system |
| CN105140075A (en) * | 2015-10-15 | 2015-12-09 | 中投仙能科技（苏州）有限公司 | Battery equalization active temperature protection switch and control method thereof |
| CN105633426A (en) * | 2016-04-07 | 2016-06-01 | 中银（宁波）电池有限公司 | Alkaline zinc-manganese cell for preventing leakage caused by over-discharge due to series connection |
| DE102016208421A1 (en) | 2016-05-17 | 2017-11-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electrical energy storage cell with integrated bridging device |
| DE102016208419B4 (en) | 2016-05-17 | 2025-12-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electrical bridging device for bridging an electrical energy source or energy consumer |
| DE102016208420B4 (en) * | 2016-05-17 | 2025-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Arrangement with multifunctional connection for energy storage cells or energy consumers |
| DE102016015788B4 (en) | 2016-05-17 | 2024-12-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electrical energy storage cell with integrated bridging device |
| CN110120557B (en) * | 2018-02-05 | 2021-01-15 | 宁德新能源科技有限公司 | Protection device and battery |
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| US3213345A (en) * | 1963-09-05 | 1965-10-19 | Mallory & Co Inc P R | Polarized shorting fuse for battery cells |
| BE667762A (en) * | 1964-08-12 | 1966-02-02 | ||
| DE1810840A1 (en) * | 1968-11-25 | 1970-06-18 | Interelectric Ag | Polarity reversal protection circuit for accumulator batteries |
| GB1461616A (en) * | 1973-04-10 | 1977-01-13 | Mabuchi Motor Co | Battery equalizing discharger |
| US4143212A (en) * | 1976-10-18 | 1979-03-06 | Tokyo Shibaura Electric Co., Ltd. | Sealed storage battery |
| DE2819584C2 (en) * | 1978-05-05 | 1983-03-17 | Brown, Boveri & Cie Ag, 6800 Mannheim | Circuit for securing memory cells |
| DE3245655A1 (en) * | 1982-09-01 | 1984-06-14 | Johann Josef 8918 Diessen Kerschgens | UV irradiation device, preferably as an accessory arrangement for an electric hairdrier |
| US4452867A (en) * | 1983-02-28 | 1984-06-05 | Pittway Corporation | Storage battery containing voltage reducing means |
| US4496448A (en) * | 1983-10-13 | 1985-01-29 | At&T Bell Laboratories | Method for fabricating devices with DC bias-controlled reactive ion etching |
| US4705322A (en) * | 1985-07-05 | 1987-11-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Protection of inductive load switching transistors from inductive surge created overvoltage conditions |
| US4719401A (en) * | 1985-12-04 | 1988-01-12 | Powerplex Technologies, Inc. | Zener diode looping element for protecting a battery cell |
| DE3542838A1 (en) * | 1985-12-04 | 1987-06-11 | Bbc Brown Boveri & Cie | Bypass element |
-
1987
- 1987-07-01 DE DE19873721754 patent/DE3721754A1/en not_active Withdrawn
-
1988
- 1988-06-23 EP EP88109965A patent/EP0297421B1/en not_active Expired - Lifetime
- 1988-06-23 DE DE8888109965T patent/DE3881586D1/en not_active Expired - Fee Related
- 1988-06-28 JP JP63158220A patent/JPS6423727A/en active Pending
- 1988-06-30 US US07/213,527 patent/US4879188A/en not_active Expired - Fee Related
- 1988-06-30 CA CA000570980A patent/CA1291790C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10763595B1 (en) | 2015-11-20 | 2020-09-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Electrical bridging device for bridging electrical components, in particular an energy source or an energy consumer |
Also Published As
| Publication number | Publication date |
|---|---|
| US4879188A (en) | 1989-11-07 |
| EP0297421B1 (en) | 1993-06-09 |
| EP0297421A2 (en) | 1989-01-04 |
| DE3881586D1 (en) | 1993-07-15 |
| JPS6423727A (en) | 1989-01-26 |
| EP0297421A3 (en) | 1990-05-09 |
| DE3721754A1 (en) | 1989-01-12 |
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