CA1280178C - Temperature stabilized rf detector - Google Patents
Temperature stabilized rf detectorInfo
- Publication number
- CA1280178C CA1280178C CA000566695A CA566695A CA1280178C CA 1280178 C CA1280178 C CA 1280178C CA 000566695 A CA000566695 A CA 000566695A CA 566695 A CA566695 A CA 566695A CA 1280178 C CA1280178 C CA 1280178C
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- bias
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- Expired - Lifetime
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- 238000009499 grossing Methods 0.000 claims abstract 2
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
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Abstract
Abstract of the Disclosure A temperature stabilized RF detector circuit comprises a detecting diode for detecting an RF input signal and a filter for smoothing the output of the detecting diode. A series connection of a compensating diode is provided and a resistor which is connected between the filter and ground, the compensating diode having the same polarity as the detecting diode and the detecting and compensating diodes are disposed in a manner that their thermal environments are identical with each other. A bias circuit supplies the detecting diode with a DC bias voltage, and is coupled to the detecting and compensating diodes so that the current through the detecting diode is equal to the current through the compensating diode.
Description
1~1~8 The present invention relates to an RF (radio frequency) detector using a semiconductor diode, and more particularly to a temperature stabilized RF detector.
In the RF detector, it is usual to employ a DC bias current flowing through a detecting diode in order to obtain the linear detecting characteristics over ~he wide dynamic range of RF inputs. Since the forward voltage of the diode depends on its operating temperature, however, such an RF
detector has a disadvantage in that the detected output voltage depends on the temperature. This effect is conspicuous specifically for small RF input. An RF detector having the improved temperature characteristics for small RF
input is described, for example, in a paper entitled "A
TEMPERATURE STABILIZED RF DETECTOR WITH EXTENDED DYNAMIC
RANGE", by R.J. Turner, 32nd IEEE Vehicular Technology Conference Record, May 23-26, 1982, pp. 231-242. The detail of this RF detector will be described hereinafter. Basically, the Turner's detector cancels the change in detected output voltage due to the temperature variations by connecting a temperature stabilizing diode to the detecting diode so that their temperature environments are identical. As a result, the DC bias variations in the detecting diode due to temperature variations can be compensated.
However, since the detecting current flows only through the detecting diode to which the RF signal is applied, the currents flowing through the detecting diode and the temperature stabilizing diode become different from each other. Therefore, the forward voltages across both diodes inevitably become different from each other. Thus, the complete temperature stabilization cannot be attained resorting to the Turner's detector.
It is an object of the present invention to provide an RF detector circuit capable of precisely detecting an RF
signal for a wide dynamic range of the RFi~`nputs.
A temperature stabilized RF dètector circuit according to the present invention comprises a detecting diode 1;~80~1~8 for detecting an RF signal, means for supplying the detecting diode with a DC bias, and a temperature stabilizing diode.
The detecting and temperature stabilizing diodes are arranged so that the same current flows through both diodes in the same direction.
Figure 1 is a schematic diagram of an RF detector circuit according to the present invention;
Figure 2 is a schematic diagram showing the specific circuit of Figure l;
Figure 3 is a schematic diagram of a prior art RF
detector circuit;
Figure 4 is a diagram showing the idealized I-V
characteristics of a diode at various operating temperatures;
and Figure 5 is a diagram showing the real I-V
characteristics of a diode at various operating temperatures.
To facilitate the understanding of the present invention, the RF detector circuit described in the aforementioned article by Turner will first be explained referring to Figure 3.
In Figure 3, an RF voltage at an input terminal 3 is detected by a detecting diode 1, smoothed by a filter composed of capacitors 9 and 10 and a choke coil 11, and finally supplied as an output Vout1 to a terminal 4. The bias voltage VB is applied to the detecting diode 1 via a resistor 15 and an RF stopping circuit composed of a choke coil 7 and a capacitor ~. A voltage V0ut2 at a terminal 22 is the output of a subtracter 21, which is the difference between the output voltage VOutl and the output voltage VREF Of a circuit composed of a diode 13, resistors 16 and 20, and capacitors 18 and 19, that is, VOUt2 = VOUt1 -- VREF ....................... ( 1 ) Now, the resistance values of the resistors 15, 16, 17 and 20 will be denoted by R15, R16, R17 and R20, respectively.
The voltage across the resistor 17, that is, the voltage V
at t~e terminal 4, is the su~ of a DC bias voltage divided by a voltage divider composed of the resistors 15 and 17, and the det.ected voltage VDET ~
VOUt1 = (VB VD1) (R17/ (R15 + R17) ) + VDET ~ ~ ~ (2) where V0l denotes the forward voltage of the diode 1.
On the other hand, the voltage VREF across the resistor 20 is given by, VRE~ = (V8 -- VD13) (R20/(R16 + R20) ) ~ ~ (3) where VD13 denotes the forward voltage of the diode 13. If ~15 = R16 and R17 = R20- the following expression is obtained from equations ~1), (2) and (3), VOUT2 = VOUT1 ~ VREF
= (VD1 ~ VD13) (R17/(R15 R17) ) + VDET ~ ~ ~ (4) If the diodes having the same temperature characteristics are used as diodes 1 and 13 in the identical temperature environment, the following relation holds, VD1 = VD13 with the result that VOUt2 = VDET ~ ( 6 ) Therefore, the use of the diode 13 can eliminate the change in the DC bias due to temperature variations and thus suppress the corresponding change in the final detected voltage.
In the aforementioned detector circuit by Turner, it is assumed that the forward voltage of a diode depends only on its operating temperature and not on tha current flowing therethrough, as is shown in Figure 4. Under this assumption, the temperature stabilization can completely be realized by means of the circuit in Figure 3. However, the real diode does not have the I-V characteristics shown in Figure 4 but the one shown in Figure 5. In other words, the forward voltage Vd of a diode is given by Vd =Vd(i~T) -where T denotes the operating temperature of the diode.
Assuming that the operating temperature T is constant, a constant current iD13 flows through the diode 13 .~
~801`78 (Figure 3), ~hich current is equal to the current iDl through the diode 1 if the RF input signal is absent. Otherwise, the detected current flows through the diode 1 in addition to the current iDl3, that is, iDl = iD13 ~ iDET
where iDET denotes the DC component of the ripple current produced by the detection. As is obvious from equation (7), iD1 ~ iD13, so that Vd(iDl, T) ~ Vd(iD13, T) Thus, the assumption of equation (5) does not hold, which means that the temperature stabilization is incomplete.
If the values of the resistors 15, 16, 17 and 20 are properly selected, the relation iDl = iD13 holds only for a certain RF input level. However, it does not hold for other RF input levels, causing incomplete temperature stabilization again.
Now, the present invention will be explained with reference to Figure 1. In Figure 1, an RF detector circuit comprises a detecting diode 1 and a filter 26 composed of capacitors 9 and 10 and a choke coil 11, by which an RF signal applied at a terminal 3 is detected and smoothed to be supplied to a terminal 4. An RF stopping circuit 23 is composed of a choke coil 7 and a capacitor 8. The series connection of a resistor 5 and a compensating diode 2 is connected between the terminal 4 and ground. A bias voltage VB1 is produced by summing up a voltage at the connection point of the resistor 5 and the diode 2, and a bias voltaga VB applied at a terminal 12 by means of an adder 6. This bias voltage VB1 is applied to the detecting diode 1 through RF
stopping circuit 23.
The detecting diode 1 and the compensating diode 2 have the same polarity with respect to the current loop of the bias voltage VB1 applied to the diode 1. Moreover, the same current is made to flow through both diodes. In other words, the current iD1 through the diode 1 is always equal to the current iD2 through the diode 2. Therefore, if the diodes 1 ~2~30178 and 2 are thermally coupled so as to be suffered from the same temperature effect, the forward voltages of the diodes 1 and 2 become VD1 = Vd(iD1~ T) = VDZ = Vd(iD21 T) Thus, an output voltage V~t at the terminal 4 is given by, VO~t = VB1 -- VD1 + VDET
where VDET denotes the detected voltage. Since VB1 = VB + VD2 = VB ~ VD1 the output voltage becomes 10 VOUt = VB ~ VD1 ~ VD1 + VDET
= VB + VDE~ ( 8 ) Consequently, the detected output voltage V0ut is not affected by the variation in the forward voltage of the diode for any RF input signal level and any operating temperature. The voltage VB1 and the value of the resistor S are determined so that the linear operation of the diode is assumed and that the dynamic range of the output voltage V0ut lies in the desired range.
In the circuit shown in Figure 2, the adder 6 in the circuit of Figure 1 is realized by a circuit using the operational amplifiers. An operational amplifier 24 is a high input-impedance inverting adder, while an operational amplifier 25 is a low output-impedance inverter acting as a low-impedance voltage source. If all the values of the resistors determining the gain of the amplifiers 24 and 25 are chosen to be identically R, it is obvious that the result of equation ~8) can be obtained. It is preferable that an external circuit connected to the terminal 4 is a voltage-driven circuit having substantially infinite input-impedance~
In practice, to the terminal 4 may be connected an external circuit whose input impedance is large enough not to substantially flow a current from the RF detector to the external circuit.
In the above explanation, the RF stopping circuit 23 and the filter 26 for the detected voltage in Figure 1 are ,i"
i ' ~280~1~78 not limited by those shown. Any circuit can be used if the currents flowing through the diodes 1 and 2 are mutually equal with respect to the DC loop of the bias voltage VB1. Although th,e bias voltage VB1 in Figures 1 and 2 is assumed to be positive, the polarities of the diodes 1 and 2 should be reversed if the negative bias voltage is used.
As is explained above, the detector circuit according to the present invention comprises the serial connection of the compensating diode and a resistor connected between the detecting diode and ground so that the same DC
current flows through the detecting diode and the compensating diode. The detector circuit supplies the detecting diode through an RF stopping circuit with a sum of the voltage at the connection point of the serial connection and the predetermined DC voltage. As a result, the final detected voltage is not affected by the diode forward voltage.
Accordingly, the effect due to the operating temperature variations is excluded and the extremely precise RF detection can be attained for any RF input signal level.
,...
. .
In the RF detector, it is usual to employ a DC bias current flowing through a detecting diode in order to obtain the linear detecting characteristics over ~he wide dynamic range of RF inputs. Since the forward voltage of the diode depends on its operating temperature, however, such an RF
detector has a disadvantage in that the detected output voltage depends on the temperature. This effect is conspicuous specifically for small RF input. An RF detector having the improved temperature characteristics for small RF
input is described, for example, in a paper entitled "A
TEMPERATURE STABILIZED RF DETECTOR WITH EXTENDED DYNAMIC
RANGE", by R.J. Turner, 32nd IEEE Vehicular Technology Conference Record, May 23-26, 1982, pp. 231-242. The detail of this RF detector will be described hereinafter. Basically, the Turner's detector cancels the change in detected output voltage due to the temperature variations by connecting a temperature stabilizing diode to the detecting diode so that their temperature environments are identical. As a result, the DC bias variations in the detecting diode due to temperature variations can be compensated.
However, since the detecting current flows only through the detecting diode to which the RF signal is applied, the currents flowing through the detecting diode and the temperature stabilizing diode become different from each other. Therefore, the forward voltages across both diodes inevitably become different from each other. Thus, the complete temperature stabilization cannot be attained resorting to the Turner's detector.
It is an object of the present invention to provide an RF detector circuit capable of precisely detecting an RF
signal for a wide dynamic range of the RFi~`nputs.
A temperature stabilized RF dètector circuit according to the present invention comprises a detecting diode 1;~80~1~8 for detecting an RF signal, means for supplying the detecting diode with a DC bias, and a temperature stabilizing diode.
The detecting and temperature stabilizing diodes are arranged so that the same current flows through both diodes in the same direction.
Figure 1 is a schematic diagram of an RF detector circuit according to the present invention;
Figure 2 is a schematic diagram showing the specific circuit of Figure l;
Figure 3 is a schematic diagram of a prior art RF
detector circuit;
Figure 4 is a diagram showing the idealized I-V
characteristics of a diode at various operating temperatures;
and Figure 5 is a diagram showing the real I-V
characteristics of a diode at various operating temperatures.
To facilitate the understanding of the present invention, the RF detector circuit described in the aforementioned article by Turner will first be explained referring to Figure 3.
In Figure 3, an RF voltage at an input terminal 3 is detected by a detecting diode 1, smoothed by a filter composed of capacitors 9 and 10 and a choke coil 11, and finally supplied as an output Vout1 to a terminal 4. The bias voltage VB is applied to the detecting diode 1 via a resistor 15 and an RF stopping circuit composed of a choke coil 7 and a capacitor ~. A voltage V0ut2 at a terminal 22 is the output of a subtracter 21, which is the difference between the output voltage VOutl and the output voltage VREF Of a circuit composed of a diode 13, resistors 16 and 20, and capacitors 18 and 19, that is, VOUt2 = VOUt1 -- VREF ....................... ( 1 ) Now, the resistance values of the resistors 15, 16, 17 and 20 will be denoted by R15, R16, R17 and R20, respectively.
The voltage across the resistor 17, that is, the voltage V
at t~e terminal 4, is the su~ of a DC bias voltage divided by a voltage divider composed of the resistors 15 and 17, and the det.ected voltage VDET ~
VOUt1 = (VB VD1) (R17/ (R15 + R17) ) + VDET ~ ~ ~ (2) where V0l denotes the forward voltage of the diode 1.
On the other hand, the voltage VREF across the resistor 20 is given by, VRE~ = (V8 -- VD13) (R20/(R16 + R20) ) ~ ~ (3) where VD13 denotes the forward voltage of the diode 13. If ~15 = R16 and R17 = R20- the following expression is obtained from equations ~1), (2) and (3), VOUT2 = VOUT1 ~ VREF
= (VD1 ~ VD13) (R17/(R15 R17) ) + VDET ~ ~ ~ (4) If the diodes having the same temperature characteristics are used as diodes 1 and 13 in the identical temperature environment, the following relation holds, VD1 = VD13 with the result that VOUt2 = VDET ~ ( 6 ) Therefore, the use of the diode 13 can eliminate the change in the DC bias due to temperature variations and thus suppress the corresponding change in the final detected voltage.
In the aforementioned detector circuit by Turner, it is assumed that the forward voltage of a diode depends only on its operating temperature and not on tha current flowing therethrough, as is shown in Figure 4. Under this assumption, the temperature stabilization can completely be realized by means of the circuit in Figure 3. However, the real diode does not have the I-V characteristics shown in Figure 4 but the one shown in Figure 5. In other words, the forward voltage Vd of a diode is given by Vd =Vd(i~T) -where T denotes the operating temperature of the diode.
Assuming that the operating temperature T is constant, a constant current iD13 flows through the diode 13 .~
~801`78 (Figure 3), ~hich current is equal to the current iDl through the diode 1 if the RF input signal is absent. Otherwise, the detected current flows through the diode 1 in addition to the current iDl3, that is, iDl = iD13 ~ iDET
where iDET denotes the DC component of the ripple current produced by the detection. As is obvious from equation (7), iD1 ~ iD13, so that Vd(iDl, T) ~ Vd(iD13, T) Thus, the assumption of equation (5) does not hold, which means that the temperature stabilization is incomplete.
If the values of the resistors 15, 16, 17 and 20 are properly selected, the relation iDl = iD13 holds only for a certain RF input level. However, it does not hold for other RF input levels, causing incomplete temperature stabilization again.
Now, the present invention will be explained with reference to Figure 1. In Figure 1, an RF detector circuit comprises a detecting diode 1 and a filter 26 composed of capacitors 9 and 10 and a choke coil 11, by which an RF signal applied at a terminal 3 is detected and smoothed to be supplied to a terminal 4. An RF stopping circuit 23 is composed of a choke coil 7 and a capacitor 8. The series connection of a resistor 5 and a compensating diode 2 is connected between the terminal 4 and ground. A bias voltage VB1 is produced by summing up a voltage at the connection point of the resistor 5 and the diode 2, and a bias voltaga VB applied at a terminal 12 by means of an adder 6. This bias voltage VB1 is applied to the detecting diode 1 through RF
stopping circuit 23.
The detecting diode 1 and the compensating diode 2 have the same polarity with respect to the current loop of the bias voltage VB1 applied to the diode 1. Moreover, the same current is made to flow through both diodes. In other words, the current iD1 through the diode 1 is always equal to the current iD2 through the diode 2. Therefore, if the diodes 1 ~2~30178 and 2 are thermally coupled so as to be suffered from the same temperature effect, the forward voltages of the diodes 1 and 2 become VD1 = Vd(iD1~ T) = VDZ = Vd(iD21 T) Thus, an output voltage V~t at the terminal 4 is given by, VO~t = VB1 -- VD1 + VDET
where VDET denotes the detected voltage. Since VB1 = VB + VD2 = VB ~ VD1 the output voltage becomes 10 VOUt = VB ~ VD1 ~ VD1 + VDET
= VB + VDE~ ( 8 ) Consequently, the detected output voltage V0ut is not affected by the variation in the forward voltage of the diode for any RF input signal level and any operating temperature. The voltage VB1 and the value of the resistor S are determined so that the linear operation of the diode is assumed and that the dynamic range of the output voltage V0ut lies in the desired range.
In the circuit shown in Figure 2, the adder 6 in the circuit of Figure 1 is realized by a circuit using the operational amplifiers. An operational amplifier 24 is a high input-impedance inverting adder, while an operational amplifier 25 is a low output-impedance inverter acting as a low-impedance voltage source. If all the values of the resistors determining the gain of the amplifiers 24 and 25 are chosen to be identically R, it is obvious that the result of equation ~8) can be obtained. It is preferable that an external circuit connected to the terminal 4 is a voltage-driven circuit having substantially infinite input-impedance~
In practice, to the terminal 4 may be connected an external circuit whose input impedance is large enough not to substantially flow a current from the RF detector to the external circuit.
In the above explanation, the RF stopping circuit 23 and the filter 26 for the detected voltage in Figure 1 are ,i"
i ' ~280~1~78 not limited by those shown. Any circuit can be used if the currents flowing through the diodes 1 and 2 are mutually equal with respect to the DC loop of the bias voltage VB1. Although th,e bias voltage VB1 in Figures 1 and 2 is assumed to be positive, the polarities of the diodes 1 and 2 should be reversed if the negative bias voltage is used.
As is explained above, the detector circuit according to the present invention comprises the serial connection of the compensating diode and a resistor connected between the detecting diode and ground so that the same DC
current flows through the detecting diode and the compensating diode. The detector circuit supplies the detecting diode through an RF stopping circuit with a sum of the voltage at the connection point of the serial connection and the predetermined DC voltage. As a result, the final detected voltage is not affected by the diode forward voltage.
Accordingly, the effect due to the operating temperature variations is excluded and the extremely precise RF detection can be attained for any RF input signal level.
,...
. .
Claims (12)
1. A temperature stabilized RF detector circuit comprising:
a detecting diode for detecting an RF input signal;
a filter for smoothing the output of said detecting diode;
a series connection of a compensating diode and a resistor which is connected between said filter and ground, said compensating diode having the same polarity as said detecting diode, said detecting and compensating diodes being disposed in a manner that their thermal environments are identical with each other; and a bias circuit for supplying said detecting diode with a DC bias voltage, said bias circuit being coupled to said detecting and compensating diodes so that the current through said detecting diode is equal to the current through said compensating diode.
a detecting diode for detecting an RF input signal;
a filter for smoothing the output of said detecting diode;
a series connection of a compensating diode and a resistor which is connected between said filter and ground, said compensating diode having the same polarity as said detecting diode, said detecting and compensating diodes being disposed in a manner that their thermal environments are identical with each other; and a bias circuit for supplying said detecting diode with a DC bias voltage, said bias circuit being coupled to said detecting and compensating diodes so that the current through said detecting diode is equal to the current through said compensating diode.
2. A detector circuit as claimed in claim 1, wherein the anode of said detecting diode is connected to the side of said RF input signal.
3. A detector circuit as claimed in claim 1, wherein the cathode of said detecting diode is connected to the side of said RF input signal.
4. A detector circuit as claimed in claim 1, wherein said bias circuit is connected to the connection point of said compensating diode and said resistor, and comprises:
an adding circuit having high input and low output impedances for adding a first voltage at said connection point and a second voltage; and an RF stopping circuit for stopping an RF component applied to said detecting diode and for applying the output voltage of said adding circuit as said DC bias voltage to said detecting diode.
an adding circuit having high input and low output impedances for adding a first voltage at said connection point and a second voltage; and an RF stopping circuit for stopping an RF component applied to said detecting diode and for applying the output voltage of said adding circuit as said DC bias voltage to said detecting diode.
5. A detector circuit as claimed in claim 4, wherein said adding circuit comprises:
first operational amplifier means used as an inverting adder for adding said first voltage and said second voltage to produce an inverted output; and second operational amplifier means used as an inverter for inverting said inverted output and for supplying the resultant to said RF stopping circuit.
first operational amplifier means used as an inverting adder for adding said first voltage and said second voltage to produce an inverted output; and second operational amplifier means used as an inverter for inverting said inverted output and for supplying the resultant to said RF stopping circuit.
6. A detector circuit as claimed in claim 5, wherein an RF detected output obtained at the connection point of said filter and said resistor is supplied to an external circuit having substantially infinite input impedance.
7. A temperature stabilized RF detector circuit comprising:
a detecting diode for detecting an RF signal; and a series connection of a compensating diode and a resistor which is connected between said detecting diode and ground so that the same DC current flows through said detecting diode and said compensating diode in the same direction, the sum of the voltage at the connection point of said resistor and said compensating diode and a predetermined DC voltage being applied to said detecting diode via an RF
stopping circuit.
a detecting diode for detecting an RF signal; and a series connection of a compensating diode and a resistor which is connected between said detecting diode and ground so that the same DC current flows through said detecting diode and said compensating diode in the same direction, the sum of the voltage at the connection point of said resistor and said compensating diode and a predetermined DC voltage being applied to said detecting diode via an RF
stopping circuit.
8. An RF detector circuit comprising:
first diode means for detecting an RF signal;
bias means for supplying said first diode means with a DC bias; and second diode means connected to said first diode means and to said bias means so that the same current flowing through said first diode means flows through said second diode means in the same direction.
first diode means for detecting an RF signal;
bias means for supplying said first diode means with a DC bias; and second diode means connected to said first diode means and to said bias means so that the same current flowing through said first diode means flows through said second diode means in the same direction.
9. A RF detector circuit as claimed in claim 8 further comprising:
filter means for filtering the detected output detected by said first diode means and for supplying the filtered output to a circuit having substantially infinite input impedance; and resistor means connected between said filter means and said second diode means.
filter means for filtering the detected output detected by said first diode means and for supplying the filtered output to a circuit having substantially infinite input impedance; and resistor means connected between said filter means and said second diode means.
10. An RF detector circuit as claimed in claim 9, wherein said bias means comprises:
adding means having substantially infinite input impedance for adding a DC voltage applied to said second diode means and a predetermined DC voltage; and means for stopping an RF component applied to said first diode means and for supplying said first diode means with the output voltage of said adding means as said DC bias.
adding means having substantially infinite input impedance for adding a DC voltage applied to said second diode means and a predetermined DC voltage; and means for stopping an RF component applied to said first diode means and for supplying said first diode means with the output voltage of said adding means as said DC bias.
11. A method for stabilizing the variation in the detected output due to the variation of the operating temperature of a detecting diode comprising the steps of:
detecting an RF signal by means of said detecting diode;
supplying said detecting diode with a DC bias; and connecting a stabilizing diode to said detecting diode so that the same current flowing through said detecting diode flows therethrough in the same direction.
detecting an RF signal by means of said detecting diode;
supplying said detecting diode with a DC bias; and connecting a stabilizing diode to said detecting diode so that the same current flowing through said detecting diode flows therethrough in the same direction.
12. A method as claimed in claim 11 further comprising the steps of:
supplying a circuit having substantially infinite input impedance with the detected output detected by said detecting diode after filtering the RF component thereof; and applying the filtered detected output to said stabilizing diode through a resistor.
supplying a circuit having substantially infinite input impedance with the detected output detected by said detecting diode after filtering the RF component thereof; and applying the filtered detected output to said stabilizing diode through a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000566695A CA1280178C (en) | 1987-05-15 | 1988-05-13 | Temperature stabilized rf detector |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP116766/1987 | 1987-05-15 | ||
| CA000566695A CA1280178C (en) | 1987-05-15 | 1988-05-13 | Temperature stabilized rf detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1280178C true CA1280178C (en) | 1991-02-12 |
Family
ID=4138021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000566695A Expired - Lifetime CA1280178C (en) | 1987-05-15 | 1988-05-13 | Temperature stabilized rf detector |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1280178C (en) |
-
1988
- 1988-05-13 CA CA000566695A patent/CA1280178C/en not_active Expired - Lifetime
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