CA1240283A - Dual ion beam deposition of amorphous semiconductor alloy films - Google Patents
Dual ion beam deposition of amorphous semiconductor alloy filmsInfo
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- CA1240283A CA1240283A CA000480167A CA480167A CA1240283A CA 1240283 A CA1240283 A CA 1240283A CA 000480167 A CA000480167 A CA 000480167A CA 480167 A CA480167 A CA 480167A CA 1240283 A CA1240283 A CA 1240283A
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Abstract
ABSTRACT
A sputtering process for depositing amorphous films of semiconducting alloys having a reduced number of localized states is disclosed. In particular, hydrogenated alloy films free of polyhydrides may be prepared according to the inventive process. In one application of the process an alloy target is bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target and by passivating ions of a substance effective in passivating localized states in amorphous semiconductor films, such as halogen or hydrogen ions. In another application, targets of the elemental semiconductors that are the constituents of the alloy of the deposited film are simultaneously bombarded by separate pairs of ion beams. Each pair of ion beams includes a beam of passivating ions and a beam of sputtering ions. The products of the sputtering are collected on a remotely located substrate to form a passivated, amorphous alloy film. In a preferred application, amorphous, hydrogenated alloys of germanium and silicon containing hydrogen predominantly in the form of monohydrides are produced. Films produced according to the process may be doped and junction structures formed during deposition by adding dopant ions to a beam of passivating ions.
A sputtering process for depositing amorphous films of semiconducting alloys having a reduced number of localized states is disclosed. In particular, hydrogenated alloy films free of polyhydrides may be prepared according to the inventive process. In one application of the process an alloy target is bombarded by separate beams of relatively heavy sputtering ions, such as argon ions, effective in sputtering the target and by passivating ions of a substance effective in passivating localized states in amorphous semiconductor films, such as halogen or hydrogen ions. In another application, targets of the elemental semiconductors that are the constituents of the alloy of the deposited film are simultaneously bombarded by separate pairs of ion beams. Each pair of ion beams includes a beam of passivating ions and a beam of sputtering ions. The products of the sputtering are collected on a remotely located substrate to form a passivated, amorphous alloy film. In a preferred application, amorphous, hydrogenated alloys of germanium and silicon containing hydrogen predominantly in the form of monohydrides are produced. Films produced according to the process may be doped and junction structures formed during deposition by adding dopant ions to a beam of passivating ions.
Description
~Z40~33 DUAL ION BEAM DEPOSITION OF AMORPHOUS
SEMICONDUCTOR ALLOY FILMS
BACKGROUND
The performance of semiconductor photovoltaic cells is directly related to a number of the properties of the material or materials from which they are made.
Amorphous semiconductor materials may be deposited on various substrates by a number of different known processes, such as radio frequency and ion beam sputtering and by glow discharge, for the production of photovoltaic cells. To obtain amorphous materials having satisfactory electronic properties, it is necessary to reduce the number of or to passivity the dangling bonds in amorphous films. Hydrogen and the halogens are known passivating atoms for amorphous silicon. Typically, hydrogenated, amorphous silicon has a measured band gap energy of 1.7 to 1.8 eve meaning no electrical charge carriers can be generated in those films by photons having less than than band gap energy. Therefore a significant amount of solar energy cannot be converted to electrical energy by amorphous, hydrogenated silicon films. On the other hand, if the band gap energy of a film is too low, the efficiency of the semiconductor film in generating charge carriers in response to incoming photons is reduced. Various semiconductor materials have band gap energies lower than that of amorphous silicon, but are unsuited for photovoltaic cells for numerous reasons, including the difficulty and expense of preparation. An ideal band gap energy, compromising efficiency of charge carrier generation and responsiveness to the energy range of photons present in solar illumination, is about 1.4 eve It is known that alloys of elemental semiconductors having band gap energies intermediate those of the constituent elements can be prepared. For example, single crystal alloys of germanium and silicon have I,"
_ 3 _ ~240~83 band gap energies between their elemental values (eve and Levi respectively) depending upon the relative proportions of germanium and silicon in the alloy. The same band gap energy grading observed in crystalline alloys occurs in passivated amorphous alloy films, but amorphous alloy f ills having satisfactory electronic properties have been difficult to prepare. It is known that the electronic properties of hydrogenated amorphous silicon films are significantly improved if passivating hydrogen is present only in the form of silicon monohydrides. The electronic properties of amorphous germanium-silicon alloys are also improved when hydrogen is used to passivity localized states if the hydrogen is present only as monohydrides. Regardless of the passivating element used in an amorphous semi conducting alloy, the element must be efficiently directed to each of the elements in the alloy to achieve the desired result.
SUMMARY OF THE INVENTION
________________________ In the invention, a process for preparing films of passivated amorphous alloys of elemental semiconductors, such as silicon and germanium, is disclosed. In one application of the invention separate ion beams of relatively heavy sputtering ions, such as argon ions, and passivating ions, such as halogen or hydrogen ions, are directed at a sputter target. The target is composed of the semi conducting alloy of which the film is to be formed. The material sputtered from the target by the beams is collected on a substrate as an amorphous, passivated alloy film. In another application of the invention, a separate sputter target of each elemental constituent of the alloy film is provided. A
pair of ion beams, including a passivating ion beam and a heavier, sputtering ion beam, sputters material from each elemental target. A separate pair of such ion beams is used with each target. The sputtered material is ~.~,40;~33 collected on a substrate remotely located so as not to be sputtered itself or to collect inadvertently sputtered material.
The deposited films may be doped by injecting a gaseous Dupont, such as phosphine or diborane, into the source or sources producing the passivating ion beams.
The deposition process may be enhanced by illuminating the substrate with ultraviolet light, by heating the substrate and/or by bombarding the substrate with ions or electrons during the deposition.
The use of separate sputtering and passivating ion beams, and, in one application, separate sputter targets, permits a high degree of control of alloy composition and film passivation that is not provided by other deposition processes.
The invention therefore relates to a process for depositing a hydrogenated amorphous semiconductor alloy film on a substrate comprising: simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target of a semiconductor material that is to be included in said alloy film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; while directing said first and second ion beams, simultaneously directing third and fourth ion sources, respectively, against a second target of semiconductor material that is to be included in said alloy film, said second target being of a different composition from said first target said third ion beam including sputtering ions to sputter said material from said second target, and said fourth beam including hydrogen ions to reduce localized states in the deposited film; independently controlling the relative energies and - 5 - ~240283 currents of the ions in said third and fourth beams; and collecting sputtering products from said first and second targets on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of polyhydrides is efficiently deposited.
In a further aspect of the present invention, there is provided a process for depositing a hydrogenated amorphous semiconductor alloy film on a substrate comprising: simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target wherein said first target comprises an alloy of at least two elemental semiconductors that are to be deposited as said film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; and collecting sputtering products from said first target on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of po1yhydrides is efficiently deposited.
BRIEF DESCRIPTION OF DRAWINGS
_____________________________ FIG. l is a schematic cross sectional view of apparatus for carrying out one application of the inventive process.
FIG. 2 is a schematic cross sectional view of apparatus for carrying out an application of the inventive process.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
In FIG. l apparatus l for one application of the process is shown schematically, in cross section. A
vacuum vessel 3 is fitted with two ion sources 5 and 7.
Ion source 5 is supplied with a sputtering gas, such as argon, chosen to produce ions that are effective in sputtering material from a semiconductor target such as ~240283 silicon or germanium. Ion source 7 is supplied with a passivating gas to form a beam of ions of an element, such as hydrogen or a halogen, effective in passivating localized states in amorphous semiconductor films. We used hydrogen as a passivating gas. Preferably, ion sources 5 and 7 are conventional Kaufman sources. Both sources 5 and 7 produce ion beams that are directed toward a single sputter target 9 that is water-cooled. Target 9 is composed of a substantially pure alloy of elemental semiconductors such as germanium and silicon. The alloy may be polycrystalline.
The material sputtered from target 9 is collected on a substrate 11 that is located remotely from the ion beams and target to avoid collection of inadvertently sputtered materials and to avoid sputtering of the substrate. The temperature of the substrate may be elevated by a heat source which may be quartz lamps 13. A
source of ultraviolet light 15 may be used to illuminate substrate 11 and an electron source 17 may bombard substrate 11. During deposition, substrate 11 may be heated, illuminated with ultraviolet light and bombarded with electrons, independently or in combination, to enhance the deposition process. Substrate 11 may be a glass, a semiconductor or a metal such as stainless steel.
By varying the current and energy of the two ion beams separately, the rate of sputtering of target 9 and the passivating atom content of the sputtered products can be independently controlled. This feature of the inventive process is particularly important since it is known that with the hydrogen as a passivating agent, the hydrogen content of the deposited film, and the particular coordination of the hydrogen atoms with the semiconductor atoms in hydrogenated amorphous films, has a dramatic effect on the electronic properties of the film.
The deposited film may be doped by injecting a gaseous Dupont into hydrogen ion source 7. Fox example, t lZ40~8~
diborane may be used to produce a p type film and phosphine my be used to produce n type material. By varying the amount and type of Dupont injection during the deposition process, junctions of different material conductivity types may be produced, including p-i-n structures.
Another apparatus 21 for an application of the inventive process is shown in schematic cross sectional form in FIG. 2. A vacuum vessel 23 is fitted with four ion sources 25, 27, 29 and 31. Ion sources 25 and 27 are directed at a sputter target 33 which is preferably an elemental semiconductor such as silicon or germanium. Ion source 25 is supplied with a sputtering gas, such as argon, to produce a beam of ions that sputter material from target 33. Ion source 27 is supplied with a passivating gas to produce a beam of passivating ions that impinge on target 33. Ion sources 29 and 31 are entirely analogous to sources 25 and 27, except that they are directed at another sputter target 35. That target 35 is an elemental semiconductor, such as silicon or germanium, different from the composition of target 33. The deposited alloy will be composed of the materials comprising the two targets 33 and 35. Both targets are water-cooled and are of high purity.
The materials sputtered from targets 33 and 35 are collected on a substrate 37. Substrate 37 is located remotely from the four ion beams and two targets to avoid collection of inadvertently sputtered material and to avoid sputtering of the substrates. The temperature of the substrate may be elevated by a heat source which may be quartz lamps 39. An ultraviolet light source 41 and electron source 43 are also provided to illuminate and bombard substrate 37 during deposition, if desired. As noted for the other application described, the substrates may be heated, illuminated with ultraviolet light and bombarded with electrons, or may combination of them to ~24~
enhance the deposition process. The substrate may be a glass, including, fused silica, a semiconductor such as silicon, or may be metallic, such as a stainless steel.
sty varying the currents and energies of the four ion beams used in this application of the inventive process, the rate of sputtering of the respective targets, the composition of the deposited alloy film and the passivating atom content of the sputter products can be carefully controlled. This extreme degree of control is of great importance since the alloy composition and, in our work, the content and bonding of the passivating atoms in the film, has a very substantial effect upon the electronic properties of the film.
Doping can be accomplished as before, by injecting a gaseous Dupont, such as diborane or phosphine into at least one of the passivating ion sources. In this embodiment, there is a choice of passivating ion sources and the same Dupont need not be supplied to each. The process permits one or more junctions of differing conductivity types to be formed in the growing film by changing the Dupont type. Multiple junction devices, such as p-i-n structures can be readily prepared with the process.
By using either embodiment of the inventive process described, a continuum of compositions of passivated ternary alloys, such as Siegel I, where x ranges between 0 and 1, can be produced.
The invention has been described with respect to certain preferred embodiments. Various modifications and additions within the spirit of the invention will occur to those of skill in the art. Therefore, the scope of the invention is limited solely by the following claims.
f"' ' i ' ` ' I
SEMICONDUCTOR ALLOY FILMS
BACKGROUND
The performance of semiconductor photovoltaic cells is directly related to a number of the properties of the material or materials from which they are made.
Amorphous semiconductor materials may be deposited on various substrates by a number of different known processes, such as radio frequency and ion beam sputtering and by glow discharge, for the production of photovoltaic cells. To obtain amorphous materials having satisfactory electronic properties, it is necessary to reduce the number of or to passivity the dangling bonds in amorphous films. Hydrogen and the halogens are known passivating atoms for amorphous silicon. Typically, hydrogenated, amorphous silicon has a measured band gap energy of 1.7 to 1.8 eve meaning no electrical charge carriers can be generated in those films by photons having less than than band gap energy. Therefore a significant amount of solar energy cannot be converted to electrical energy by amorphous, hydrogenated silicon films. On the other hand, if the band gap energy of a film is too low, the efficiency of the semiconductor film in generating charge carriers in response to incoming photons is reduced. Various semiconductor materials have band gap energies lower than that of amorphous silicon, but are unsuited for photovoltaic cells for numerous reasons, including the difficulty and expense of preparation. An ideal band gap energy, compromising efficiency of charge carrier generation and responsiveness to the energy range of photons present in solar illumination, is about 1.4 eve It is known that alloys of elemental semiconductors having band gap energies intermediate those of the constituent elements can be prepared. For example, single crystal alloys of germanium and silicon have I,"
_ 3 _ ~240~83 band gap energies between their elemental values (eve and Levi respectively) depending upon the relative proportions of germanium and silicon in the alloy. The same band gap energy grading observed in crystalline alloys occurs in passivated amorphous alloy films, but amorphous alloy f ills having satisfactory electronic properties have been difficult to prepare. It is known that the electronic properties of hydrogenated amorphous silicon films are significantly improved if passivating hydrogen is present only in the form of silicon monohydrides. The electronic properties of amorphous germanium-silicon alloys are also improved when hydrogen is used to passivity localized states if the hydrogen is present only as monohydrides. Regardless of the passivating element used in an amorphous semi conducting alloy, the element must be efficiently directed to each of the elements in the alloy to achieve the desired result.
SUMMARY OF THE INVENTION
________________________ In the invention, a process for preparing films of passivated amorphous alloys of elemental semiconductors, such as silicon and germanium, is disclosed. In one application of the invention separate ion beams of relatively heavy sputtering ions, such as argon ions, and passivating ions, such as halogen or hydrogen ions, are directed at a sputter target. The target is composed of the semi conducting alloy of which the film is to be formed. The material sputtered from the target by the beams is collected on a substrate as an amorphous, passivated alloy film. In another application of the invention, a separate sputter target of each elemental constituent of the alloy film is provided. A
pair of ion beams, including a passivating ion beam and a heavier, sputtering ion beam, sputters material from each elemental target. A separate pair of such ion beams is used with each target. The sputtered material is ~.~,40;~33 collected on a substrate remotely located so as not to be sputtered itself or to collect inadvertently sputtered material.
The deposited films may be doped by injecting a gaseous Dupont, such as phosphine or diborane, into the source or sources producing the passivating ion beams.
The deposition process may be enhanced by illuminating the substrate with ultraviolet light, by heating the substrate and/or by bombarding the substrate with ions or electrons during the deposition.
The use of separate sputtering and passivating ion beams, and, in one application, separate sputter targets, permits a high degree of control of alloy composition and film passivation that is not provided by other deposition processes.
The invention therefore relates to a process for depositing a hydrogenated amorphous semiconductor alloy film on a substrate comprising: simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target of a semiconductor material that is to be included in said alloy film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; while directing said first and second ion beams, simultaneously directing third and fourth ion sources, respectively, against a second target of semiconductor material that is to be included in said alloy film, said second target being of a different composition from said first target said third ion beam including sputtering ions to sputter said material from said second target, and said fourth beam including hydrogen ions to reduce localized states in the deposited film; independently controlling the relative energies and - 5 - ~240283 currents of the ions in said third and fourth beams; and collecting sputtering products from said first and second targets on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of polyhydrides is efficiently deposited.
In a further aspect of the present invention, there is provided a process for depositing a hydrogenated amorphous semiconductor alloy film on a substrate comprising: simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target wherein said first target comprises an alloy of at least two elemental semiconductors that are to be deposited as said film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; and collecting sputtering products from said first target on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of po1yhydrides is efficiently deposited.
BRIEF DESCRIPTION OF DRAWINGS
_____________________________ FIG. l is a schematic cross sectional view of apparatus for carrying out one application of the inventive process.
FIG. 2 is a schematic cross sectional view of apparatus for carrying out an application of the inventive process.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
In FIG. l apparatus l for one application of the process is shown schematically, in cross section. A
vacuum vessel 3 is fitted with two ion sources 5 and 7.
Ion source 5 is supplied with a sputtering gas, such as argon, chosen to produce ions that are effective in sputtering material from a semiconductor target such as ~240283 silicon or germanium. Ion source 7 is supplied with a passivating gas to form a beam of ions of an element, such as hydrogen or a halogen, effective in passivating localized states in amorphous semiconductor films. We used hydrogen as a passivating gas. Preferably, ion sources 5 and 7 are conventional Kaufman sources. Both sources 5 and 7 produce ion beams that are directed toward a single sputter target 9 that is water-cooled. Target 9 is composed of a substantially pure alloy of elemental semiconductors such as germanium and silicon. The alloy may be polycrystalline.
The material sputtered from target 9 is collected on a substrate 11 that is located remotely from the ion beams and target to avoid collection of inadvertently sputtered materials and to avoid sputtering of the substrate. The temperature of the substrate may be elevated by a heat source which may be quartz lamps 13. A
source of ultraviolet light 15 may be used to illuminate substrate 11 and an electron source 17 may bombard substrate 11. During deposition, substrate 11 may be heated, illuminated with ultraviolet light and bombarded with electrons, independently or in combination, to enhance the deposition process. Substrate 11 may be a glass, a semiconductor or a metal such as stainless steel.
By varying the current and energy of the two ion beams separately, the rate of sputtering of target 9 and the passivating atom content of the sputtered products can be independently controlled. This feature of the inventive process is particularly important since it is known that with the hydrogen as a passivating agent, the hydrogen content of the deposited film, and the particular coordination of the hydrogen atoms with the semiconductor atoms in hydrogenated amorphous films, has a dramatic effect on the electronic properties of the film.
The deposited film may be doped by injecting a gaseous Dupont into hydrogen ion source 7. Fox example, t lZ40~8~
diborane may be used to produce a p type film and phosphine my be used to produce n type material. By varying the amount and type of Dupont injection during the deposition process, junctions of different material conductivity types may be produced, including p-i-n structures.
Another apparatus 21 for an application of the inventive process is shown in schematic cross sectional form in FIG. 2. A vacuum vessel 23 is fitted with four ion sources 25, 27, 29 and 31. Ion sources 25 and 27 are directed at a sputter target 33 which is preferably an elemental semiconductor such as silicon or germanium. Ion source 25 is supplied with a sputtering gas, such as argon, to produce a beam of ions that sputter material from target 33. Ion source 27 is supplied with a passivating gas to produce a beam of passivating ions that impinge on target 33. Ion sources 29 and 31 are entirely analogous to sources 25 and 27, except that they are directed at another sputter target 35. That target 35 is an elemental semiconductor, such as silicon or germanium, different from the composition of target 33. The deposited alloy will be composed of the materials comprising the two targets 33 and 35. Both targets are water-cooled and are of high purity.
The materials sputtered from targets 33 and 35 are collected on a substrate 37. Substrate 37 is located remotely from the four ion beams and two targets to avoid collection of inadvertently sputtered material and to avoid sputtering of the substrates. The temperature of the substrate may be elevated by a heat source which may be quartz lamps 39. An ultraviolet light source 41 and electron source 43 are also provided to illuminate and bombard substrate 37 during deposition, if desired. As noted for the other application described, the substrates may be heated, illuminated with ultraviolet light and bombarded with electrons, or may combination of them to ~24~
enhance the deposition process. The substrate may be a glass, including, fused silica, a semiconductor such as silicon, or may be metallic, such as a stainless steel.
sty varying the currents and energies of the four ion beams used in this application of the inventive process, the rate of sputtering of the respective targets, the composition of the deposited alloy film and the passivating atom content of the sputter products can be carefully controlled. This extreme degree of control is of great importance since the alloy composition and, in our work, the content and bonding of the passivating atoms in the film, has a very substantial effect upon the electronic properties of the film.
Doping can be accomplished as before, by injecting a gaseous Dupont, such as diborane or phosphine into at least one of the passivating ion sources. In this embodiment, there is a choice of passivating ion sources and the same Dupont need not be supplied to each. The process permits one or more junctions of differing conductivity types to be formed in the growing film by changing the Dupont type. Multiple junction devices, such as p-i-n structures can be readily prepared with the process.
By using either embodiment of the inventive process described, a continuum of compositions of passivated ternary alloys, such as Siegel I, where x ranges between 0 and 1, can be produced.
The invention has been described with respect to certain preferred embodiments. Various modifications and additions within the spirit of the invention will occur to those of skill in the art. Therefore, the scope of the invention is limited solely by the following claims.
f"' ' i ' ` ' I
Claims (18)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A process for depositing a hydrogenated amorphous semiconductor alloy film on a substrate comprising:
simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target of a semiconductor material that is to be included in said alloy film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; while directing said first and second ion beams, simultaneously directing third and fourth ion sources, respectively, against a second target of semiconductor material that is to be included in said alloy film, said second target being of a different composition from said first target, said third ion beam including sputtering ions to sputter said material from said second target, and said fourth beam including hydrogen ions to reduce localized states in the deposited film; independently controlling the relative energies and currents of the ions in said third and fourth beams; and collecting sputtering products from said first and second targets on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of polyhydrides is efficiently deposited.
simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target of a semiconductor material that is to be included in said alloy film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; while directing said first and second ion beams, simultaneously directing third and fourth ion sources, respectively, against a second target of semiconductor material that is to be included in said alloy film, said second target being of a different composition from said first target, said third ion beam including sputtering ions to sputter said material from said second target, and said fourth beam including hydrogen ions to reduce localized states in the deposited film; independently controlling the relative energies and currents of the ions in said third and fourth beams; and collecting sputtering products from said first and second targets on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of polyhydrides is efficiently deposited.
2. The process of claim 1 wherein said sputtering ions comprise argon ions.
3. The process of claim 1 including elevating the temperature of said substrate.
4. The process of claim 1 illuminating said substrate with ultraviolet light.
5. The process of claim 1 wherein said substrate consists of one of the group of glass, fused silica and silicon.
6. The process of claim 1 wherein said substrate is metallic.
7. The process of claim 6 wherein said substrate is a stainless steel.
8. The process of claim 1 wherein at least one of said second ion source and said fourth ion source produces a beam including dopont ions.
9. The process of claim 8 wherein said dopont ions consists of one of the group of boron and phosphorous ions.
10. The process of claim 1 wherein said first target is substantially pure germanium and said second target is substantially pure silicon.
11. The process of claim 1 including irradiating said substrate with electrons.
12. A process for depositing a hydrogenated amorphous semiconductor alloy film on a substrate comprising:
simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target wherein said first target comprises an alloy of at least two elemental semiconductors that are to be deposited as said film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; and collecting sputtering products from said first target on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of polyhydrides is efficiently deposited.
simultaneously directing first and second ion beams, produced by first and second ion sources, respectively, against a first target wherein said first target comprises an alloy of at least two elemental semiconductors that are to be deposited as said film, said first ion beam including sputtering ions to sputter material from said first target and said second beam including hydrogen ions to reduce the density of localized states in the deposited film; independently controlling the relative energies and currents of ions in said first and second beams; and collecting sputtering products from said first target on said substrate, whereby a film of hydrogenated amorphous semiconductor alloy substantially free of polyhydrides is efficiently deposited.
13. The process of claim 12 wherein said sputtering ions comprise argon ions.
14. The process of claim 12 wherein said second ion source produces a beam including dopont ions.
15. The process of claim 14 wherein said dopont ions consists of one of the group of boron and phosphorous ions.
16. The process of claim 12 including illuminating said substrate with ultraviolet light.
17. The process of claim 12 including elevating the temperature of said substrate.
18. The process of claim 12 including irradiating said substrate with electrons.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65316884A | 1984-09-24 | 1984-09-24 | |
| US653,168 | 1984-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1240283A true CA1240283A (en) | 1988-08-09 |
Family
ID=24619763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000480167A Expired CA1240283A (en) | 1984-09-24 | 1985-04-26 | Dual ion beam deposition of amorphous semiconductor alloy films |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1240283A (en) |
-
1985
- 1985-04-26 CA CA000480167A patent/CA1240283A/en not_active Expired
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