CA1201645A - Capillary die assembly - Google Patents
Capillary die assemblyInfo
- Publication number
- CA1201645A CA1201645A CA000394409A CA394409A CA1201645A CA 1201645 A CA1201645 A CA 1201645A CA 000394409 A CA000394409 A CA 000394409A CA 394409 A CA394409 A CA 394409A CA 1201645 A CA1201645 A CA 1201645A
- Authority
- CA
- Canada
- Prior art keywords
- assembly
- die
- slit
- edge
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 230000008093 supporting effect Effects 0.000 claims description 11
- 239000000289 melt material Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 230000006854 communication Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000012010 growth Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000036433 growing body Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910001602 chrysoberyl Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22413881A | 1981-01-12 | 1981-01-12 | |
US224,138 | 1981-01-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1201645A true CA1201645A (en) | 1986-03-11 |
Family
ID=22839409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000394409A Expired CA1201645A (en) | 1981-01-12 | 1982-01-05 | Capillary die assembly |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS57135795A (enrdf_load_stackoverflow) |
AU (1) | AU545635B2 (enrdf_load_stackoverflow) |
CA (1) | CA1201645A (enrdf_load_stackoverflow) |
DE (1) | DE3200605A1 (enrdf_load_stackoverflow) |
FR (1) | FR2497837B1 (enrdf_load_stackoverflow) |
GB (1) | GB2091122B (enrdf_load_stackoverflow) |
IL (1) | IL64742A (enrdf_load_stackoverflow) |
IN (1) | IN158092B (enrdf_load_stackoverflow) |
NL (1) | NL8200084A (enrdf_load_stackoverflow) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2700994C2 (de) * | 1976-04-16 | 1986-02-06 | International Business Machines Corp., Armonk, N.Y. | Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern |
US4430305A (en) * | 1979-02-12 | 1984-02-07 | Mobil Solar Energy Corporation | Displaced capillary dies |
-
1981
- 1981-12-30 IN IN817/DEL/81A patent/IN158092B/en unknown
-
1982
- 1982-01-05 CA CA000394409A patent/CA1201645A/en not_active Expired
- 1982-01-06 GB GB8200265A patent/GB2091122B/en not_active Expired
- 1982-01-10 IL IL6474282A patent/IL64742A/xx unknown
- 1982-01-11 AU AU79430/82A patent/AU545635B2/en not_active Ceased
- 1982-01-11 FR FR8200306A patent/FR2497837B1/fr not_active Expired
- 1982-01-11 NL NL8200084A patent/NL8200084A/nl not_active Application Discontinuation
- 1982-01-12 JP JP323682A patent/JPS57135795A/ja active Pending
- 1982-01-12 DE DE19823200605 patent/DE3200605A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2091122A (en) | 1982-07-28 |
FR2497837A1 (fr) | 1982-07-16 |
IN158092B (enrdf_load_stackoverflow) | 1986-08-30 |
AU545635B2 (en) | 1985-07-25 |
IL64742A (en) | 1985-03-31 |
GB2091122B (en) | 1984-08-30 |
DE3200605A1 (de) | 1982-09-02 |
FR2497837B1 (fr) | 1986-06-13 |
NL8200084A (nl) | 1982-08-02 |
JPS57135795A (en) | 1982-08-21 |
AU7943082A (en) | 1982-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |