CA1196111A - Ingaas field effect transistor - Google Patents

Ingaas field effect transistor

Info

Publication number
CA1196111A
CA1196111A CA000421665A CA421665A CA1196111A CA 1196111 A CA1196111 A CA 1196111A CA 000421665 A CA000421665 A CA 000421665A CA 421665 A CA421665 A CA 421665A CA 1196111 A CA1196111 A CA 1196111A
Authority
CA
Canada
Prior art keywords
transistor
further characterized
channel region
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000421665A
Other languages
English (en)
French (fr)
Inventor
Alfred Y. Cho
Thomas P. Pearsall
Paul O'connor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1196111A publication Critical patent/CA1196111A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Junction Field-Effect Transistors (AREA)
CA000421665A 1982-02-26 1983-02-15 Ingaas field effect transistor Expired CA1196111A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35251882A 1982-02-26 1982-02-26
US352,518 1982-02-26

Publications (1)

Publication Number Publication Date
CA1196111A true CA1196111A (en) 1985-10-29

Family

ID=23385455

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000421665A Expired CA1196111A (en) 1982-02-26 1983-02-15 Ingaas field effect transistor

Country Status (3)

Country Link
JP (1) JPS58158975A (enExample)
CA (1) CA1196111A (enExample)
FR (1) FR2522442A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2187432B1 (en) * 2008-11-13 2013-01-09 Epcos AG P-type field-effect transistor and method of production

Also Published As

Publication number Publication date
JPS58158975A (ja) 1983-09-21
FR2522442B1 (enExample) 1984-12-28
FR2522442A1 (fr) 1983-09-02

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Legal Events

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