CA1196109A - High-frequency circuit device - Google Patents
High-frequency circuit deviceInfo
- Publication number
- CA1196109A CA1196109A CA000436367A CA436367A CA1196109A CA 1196109 A CA1196109 A CA 1196109A CA 000436367 A CA000436367 A CA 000436367A CA 436367 A CA436367 A CA 436367A CA 1196109 A CA1196109 A CA 1196109A
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- insulated substrate
- ground conductor
- ground
- dielectric body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
ABSTRACT OF THE DISCLOSURE, A high-frequency circuit device composed of hybrid ICs, comprises an insulated substrate, an active component fabricated on the insulated substrate and including a ground terminal for grounding high frequency signal components, a first electrode fabricated on one surface of the insulated substrate and connected to the ground terminal, a ground conductor on the insulated substrate, a dielectric body placed on the ground conductor, a second electrode fabricated on an opposite surface of the insulated substrate in confronting relation to the ground conductor across the dielectric body and connected to the first electrode through a through hole defined in the insulated substrate, the ground terminal of the active component connected to ground high-frequency signal components through the first electrode, the through hole, the electrode, the dielectric body, and the ground conductor.
Description
TI'llJ~ OF THE lNVEN-rION
-HIGH~ E'~UF.~lCY CIRCUI'r DE~iIC~:
BACKGROUND OF THE INV~NTION
The present invention relates to a high-frequency circuit device, and more particularly to a hig'n-frequency circuit device composed o~ hybrid ICs including active components such as transistors having ground terminals grounded effectively in terms of high frequencies and characteri~ed by an increased degree of integration~
Conventional high-frequency circuit devices include hybrid ICs such as transistors having emitters connected to bypass capacitors grounded to a ground conductor. It would be preferable to increase the areas of the parts constituting the bypass capacitor for effectively grounding high-frequency signal components. However, such increased areas of the capacitor parts would lea~1 to a poocer degree of component integration.
SUM'IARY OF T~E INVENTION
It is an object of t'ne present invention to provide a a high-frequency circuit device cc~nposed of hybrid ICs including active components such as transistors having ground terminals connected to bypass capacitors mounted on the back of an insulated substrate, t'nereby providing an e~fec'tive capability to ground high-frequer,cy signal compoQe.nts and an improved degree of integration.
According to the present invention, there is provi~ed a high-frequenc~l circuit device composed of hybrid ICs, -1~ ~
comprising an insulated substrate, an active component fabricated on the insulated substrate and including a ground terminal for grounding high-frequency signal components, a first electrode fabricated on one surface of the insulated substrate and connected to the ground terminal, a ground conductor on the lnsulated substrate, a dielectric body placed on the ground conductor, a second electrode fahricated on an opposite surface o-f the insulated substrate in confronting relation to the ground conductor across the dielectric body and connected to the first electrode through a through hole defined in the insulated substrate, the ground terminal of the active component connected to ground high-frequency signal components through the first electrode, the through hole, the electrode, the dielectric body, and the ground conductor.
The above and other objects, features and advantages of the present invention will become more apparent from the following des_ri~ticn when ta~en in conjunction with the accompanying drawings in which a preferred embodiment of the pxesent invent;on is shown by way of illustrative example.
BRIEF DESCRIPrrON OF THE DRAWINGS
EIG. 1 is a circuit diagram of a high-frequency circuit;
F~G. 2 is a plan view of a conventional high-fr~uency circuit device in which the high-frequency circuit sho~n in FIG. 1 is co~ osed of hybrid ICs;
FIG. 3 is an en].ar~ecl cross-sectional view taken along line A - A of FIG. 2;
E`IG. 4 is a plan view of a high-frequency circuit device acco~ding to an embodiment of tne present invention; r FIG. 5 is a bottom vie~ oE the high-frequency circuit device illustrated in ~IG. ~; and FIG. 6 is an enlarged cross-sectional view taken along line B - B of FIGS. 4 and 5.
DESCRIPTION OF THE PREFERRED EMBODIMENT
There are ~nown hybrid ICs fabricated on a ceramics substrate using printed thick-film circuit technology to form a high-frequency circuit as shown in FIG. 1. The high-frequency circuit o~ FIG. 1 includes a transistor 4 for amplifying a high-frequency signal applied to an input terminal 1. The transistor 4 has an emitter to which a DC
power supoly voltage from a power supply terminal 3 through a bias resistor 6. A bypass capacitor 5 is connected to the emitter of the transistor 4 for grounding high-~requency signal components. Designated at 2 is an output terminal, 7 and 8 resistors, 9 and 10 capacitors, and 11 and 12 coils.
FIG. 2 shows a conventional high-frequency circuit device in w~ich the circuit of FIG. 1 is composed of hybrid ICs. Those parts designated by the reference numerals 3 through 6 in FIG. 2 correspond to those bearing the same refer~nce numerals in FIG. 1. Indicated at 4B, 4C, 4E are base, co.l.lector and emittec terrnina].s, respecti.veLy, of the transistor ~, 13 a ceramics substrate, 14 and 15 lead electrodes, 16 an electrode having a portion consti.tuting the bypass cap2citor 5, and 7 a through hole connectin~ the e].ectrode 16 to a ground conductor (not shown) mounted on the back of the ceramics substrate 13. Designated at 4', 6', 4'B~ 4ICr 4'E, 15' and 17' are other component~
corresponding to the parts 4~ 6, 4B, 4C, 4E, 15 and 17, respectively. As illustrated in FIG. 2, the emitter terminal 4E of the transistor 4 is connected via the lead electrode 15, the bypass capacitor 5, the electrode 16, and the through hole 17 to the ground conductor mounted on the back of the ceramics substrate 13~
The bypass capacitor 5 as shown in FIG. 2 is fabricated by printed thick-film technology. The bypass capaci~or S will be described in detail with reference to FIG. 3. Those parts bearing the reference numerals 13, 15, 16 in FIG. 3 are equivalent to those indicated by the same reference numerals in FIG. 2. Indicated at 1~3 is a ground conductor, 19 an upper electrode, 20 a dielectric body, and 21 a protective covering. In FIG. 3, the upper electrode 19 e~tends from the lead electrode 15 connected to the en~itter terminal 4E o~ the transistor 4 and is positioned in conEronting relation to the electrode 16 across the dlelectric body 20. Thus, the bypass capacitor 5 is constituted o~ the upper electrode 19, the dielectric body 20 and the electrode 16. Although not shown in FIG. 3, the electrode 16 is connected to the ground conductor 18 by the through hole 17 (FIG. 2~. ~he bypass capacitor 5' shown in FIG. 2 is also similarly constructed.
In the prior high-frequency circuit device illustrated in FIGS. 2 and 3, the bypass capacitors 5, 5~
are fabricated on the ceramics substrate 13, and it is not preferred fro~ the standpoint of increasing the degree of integrat.ion to increase the areas of the electrodes (19 and 16 as shown in FI~. 3) that constitute the bypass capacitors 5, 5'. Reduction of the areas of these electrodes however results in a failure in removing influences of residual inductances. This prevents effective grounding of high-freqllency signal components.
Conventional high-frequency circuit devices incorporatiny hybrid ICs have therefore suffered from contradictory problems; An attempt to provide better high-frequency grounding capability would fail to ac'nieve improved integration, and greater integration would result in poorer high-frequency ground.ing ability~
The present inventi.on will now be described with re:Eerence to FIGS. 4 through 6.
Like or corresponding parts in FIGS. d through 6 are denoted by like or corresponding reference characters in FIGS. 1 thro~lgh 3.
An electrode 22 fabricated on the back of a ceraMics substrate 13 is connected to an emitter terminal 4E of a transistor 4 through a through hole 17 and a lead electrode _ 5 _ 15. Design~te~ at 23 is an upper electrode on the bac1~ o~
the sub~.rate 13, 24 a dielectric bocly, and 25 a protectiving covering. The parts bearing the reference characters 17' r 22', 25' in FIG. 5 are equiva]ent to those having the reerence characters 17, 22, 25, respectively.
As shown in FIGS. 4 through 6, the high-frequency circuit device is composed of hybrid ICs arranyed in the form of t~e high--frequency circuit as shown in FIG. 1. The emitter terminal 4E o~ the transistor 4 placed on the ceramics substrate 3 is connected through the lead electrode 15 and the through hole 17 to the back electrode 22 mounted on the back of the substrate 13 and insulated by the dielectrid body 24 from the ground conductor 18. The upper back electrode 23 extending from the back electrode 22 is disposed in confronting relation to the ground conductor 18 through the dielectric body 2~. Thus, the bypass capacitor 5 as shown in FIG. 1 is constituted of an end of the back electrode 22, portions of the upper bac electrode 23, the dielectric body 24 and the ground conductor 18.
With the arranye~2nt of the in~ention, the bypass capac;tor 5 is positioned on the back of the ceramics substrate 13 as a land on the ground conductor 13. Since there is no space needed for the capacitor S on the surface of the ceramics substrate 15, the overall degree of components integration can be increased. I'he capacitance of the bypass capacitor S is suita'oly selected so that it can cut or~ DC signal cGmponents while yroundiny high-frequency signal component~.
While in the embodiment of FIGS. 4 and 6 the portions constituting the bypass capacitor 5 are square in shape, they may be circular in configuration by forming the upper back electrode 23 and the dielectric body 24 in an annular shape so that a space can be effectively utiliæed for the bypass capacitor 5.
The ground conductor 18 may be grounded by being placed on a metal chassis ~not shown) in contact therewith.
With the arrangement of the invention, the metal chassis is perforated to provide a hole having a shape corresponding to the bypass capacitor 5~ or the protect.i~e covering 25 of FIG. 5.
Although a certain preferred embodiment has been shown and described, it should be understood tliat many changes and modifications may be made therein without departing from the scope of the apQended claims.
-HIGH~ E'~UF.~lCY CIRCUI'r DE~iIC~:
BACKGROUND OF THE INV~NTION
The present invention relates to a high-frequency circuit device, and more particularly to a hig'n-frequency circuit device composed o~ hybrid ICs including active components such as transistors having ground terminals grounded effectively in terms of high frequencies and characteri~ed by an increased degree of integration~
Conventional high-frequency circuit devices include hybrid ICs such as transistors having emitters connected to bypass capacitors grounded to a ground conductor. It would be preferable to increase the areas of the parts constituting the bypass capacitor for effectively grounding high-frequency signal components. However, such increased areas of the capacitor parts would lea~1 to a poocer degree of component integration.
SUM'IARY OF T~E INVENTION
It is an object of t'ne present invention to provide a a high-frequency circuit device cc~nposed of hybrid ICs including active components such as transistors having ground terminals connected to bypass capacitors mounted on the back of an insulated substrate, t'nereby providing an e~fec'tive capability to ground high-frequer,cy signal compoQe.nts and an improved degree of integration.
According to the present invention, there is provi~ed a high-frequenc~l circuit device composed of hybrid ICs, -1~ ~
comprising an insulated substrate, an active component fabricated on the insulated substrate and including a ground terminal for grounding high-frequency signal components, a first electrode fabricated on one surface of the insulated substrate and connected to the ground terminal, a ground conductor on the lnsulated substrate, a dielectric body placed on the ground conductor, a second electrode fahricated on an opposite surface o-f the insulated substrate in confronting relation to the ground conductor across the dielectric body and connected to the first electrode through a through hole defined in the insulated substrate, the ground terminal of the active component connected to ground high-frequency signal components through the first electrode, the through hole, the electrode, the dielectric body, and the ground conductor.
The above and other objects, features and advantages of the present invention will become more apparent from the following des_ri~ticn when ta~en in conjunction with the accompanying drawings in which a preferred embodiment of the pxesent invent;on is shown by way of illustrative example.
BRIEF DESCRIPrrON OF THE DRAWINGS
EIG. 1 is a circuit diagram of a high-frequency circuit;
F~G. 2 is a plan view of a conventional high-fr~uency circuit device in which the high-frequency circuit sho~n in FIG. 1 is co~ osed of hybrid ICs;
FIG. 3 is an en].ar~ecl cross-sectional view taken along line A - A of FIG. 2;
E`IG. 4 is a plan view of a high-frequency circuit device acco~ding to an embodiment of tne present invention; r FIG. 5 is a bottom vie~ oE the high-frequency circuit device illustrated in ~IG. ~; and FIG. 6 is an enlarged cross-sectional view taken along line B - B of FIGS. 4 and 5.
DESCRIPTION OF THE PREFERRED EMBODIMENT
There are ~nown hybrid ICs fabricated on a ceramics substrate using printed thick-film circuit technology to form a high-frequency circuit as shown in FIG. 1. The high-frequency circuit o~ FIG. 1 includes a transistor 4 for amplifying a high-frequency signal applied to an input terminal 1. The transistor 4 has an emitter to which a DC
power supoly voltage from a power supply terminal 3 through a bias resistor 6. A bypass capacitor 5 is connected to the emitter of the transistor 4 for grounding high-~requency signal components. Designated at 2 is an output terminal, 7 and 8 resistors, 9 and 10 capacitors, and 11 and 12 coils.
FIG. 2 shows a conventional high-frequency circuit device in w~ich the circuit of FIG. 1 is composed of hybrid ICs. Those parts designated by the reference numerals 3 through 6 in FIG. 2 correspond to those bearing the same refer~nce numerals in FIG. 1. Indicated at 4B, 4C, 4E are base, co.l.lector and emittec terrnina].s, respecti.veLy, of the transistor ~, 13 a ceramics substrate, 14 and 15 lead electrodes, 16 an electrode having a portion consti.tuting the bypass cap2citor 5, and 7 a through hole connectin~ the e].ectrode 16 to a ground conductor (not shown) mounted on the back of the ceramics substrate 13. Designated at 4', 6', 4'B~ 4ICr 4'E, 15' and 17' are other component~
corresponding to the parts 4~ 6, 4B, 4C, 4E, 15 and 17, respectively. As illustrated in FIG. 2, the emitter terminal 4E of the transistor 4 is connected via the lead electrode 15, the bypass capacitor 5, the electrode 16, and the through hole 17 to the ground conductor mounted on the back of the ceramics substrate 13~
The bypass capacitor 5 as shown in FIG. 2 is fabricated by printed thick-film technology. The bypass capaci~or S will be described in detail with reference to FIG. 3. Those parts bearing the reference numerals 13, 15, 16 in FIG. 3 are equivalent to those indicated by the same reference numerals in FIG. 2. Indicated at 1~3 is a ground conductor, 19 an upper electrode, 20 a dielectric body, and 21 a protective covering. In FIG. 3, the upper electrode 19 e~tends from the lead electrode 15 connected to the en~itter terminal 4E o~ the transistor 4 and is positioned in conEronting relation to the electrode 16 across the dlelectric body 20. Thus, the bypass capacitor 5 is constituted o~ the upper electrode 19, the dielectric body 20 and the electrode 16. Although not shown in FIG. 3, the electrode 16 is connected to the ground conductor 18 by the through hole 17 (FIG. 2~. ~he bypass capacitor 5' shown in FIG. 2 is also similarly constructed.
In the prior high-frequency circuit device illustrated in FIGS. 2 and 3, the bypass capacitors 5, 5~
are fabricated on the ceramics substrate 13, and it is not preferred fro~ the standpoint of increasing the degree of integrat.ion to increase the areas of the electrodes (19 and 16 as shown in FI~. 3) that constitute the bypass capacitors 5, 5'. Reduction of the areas of these electrodes however results in a failure in removing influences of residual inductances. This prevents effective grounding of high-freqllency signal components.
Conventional high-frequency circuit devices incorporatiny hybrid ICs have therefore suffered from contradictory problems; An attempt to provide better high-frequency grounding capability would fail to ac'nieve improved integration, and greater integration would result in poorer high-frequency ground.ing ability~
The present inventi.on will now be described with re:Eerence to FIGS. 4 through 6.
Like or corresponding parts in FIGS. d through 6 are denoted by like or corresponding reference characters in FIGS. 1 thro~lgh 3.
An electrode 22 fabricated on the back of a ceraMics substrate 13 is connected to an emitter terminal 4E of a transistor 4 through a through hole 17 and a lead electrode _ 5 _ 15. Design~te~ at 23 is an upper electrode on the bac1~ o~
the sub~.rate 13, 24 a dielectric bocly, and 25 a protectiving covering. The parts bearing the reference characters 17' r 22', 25' in FIG. 5 are equiva]ent to those having the reerence characters 17, 22, 25, respectively.
As shown in FIGS. 4 through 6, the high-frequency circuit device is composed of hybrid ICs arranyed in the form of t~e high--frequency circuit as shown in FIG. 1. The emitter terminal 4E o~ the transistor 4 placed on the ceramics substrate 3 is connected through the lead electrode 15 and the through hole 17 to the back electrode 22 mounted on the back of the substrate 13 and insulated by the dielectrid body 24 from the ground conductor 18. The upper back electrode 23 extending from the back electrode 22 is disposed in confronting relation to the ground conductor 18 through the dielectric body 2~. Thus, the bypass capacitor 5 as shown in FIG. 1 is constituted of an end of the back electrode 22, portions of the upper bac electrode 23, the dielectric body 24 and the ground conductor 18.
With the arranye~2nt of the in~ention, the bypass capac;tor 5 is positioned on the back of the ceramics substrate 13 as a land on the ground conductor 13. Since there is no space needed for the capacitor S on the surface of the ceramics substrate 15, the overall degree of components integration can be increased. I'he capacitance of the bypass capacitor S is suita'oly selected so that it can cut or~ DC signal cGmponents while yroundiny high-frequency signal component~.
While in the embodiment of FIGS. 4 and 6 the portions constituting the bypass capacitor 5 are square in shape, they may be circular in configuration by forming the upper back electrode 23 and the dielectric body 24 in an annular shape so that a space can be effectively utiliæed for the bypass capacitor 5.
The ground conductor 18 may be grounded by being placed on a metal chassis ~not shown) in contact therewith.
With the arrangement of the invention, the metal chassis is perforated to provide a hole having a shape corresponding to the bypass capacitor 5~ or the protect.i~e covering 25 of FIG. 5.
Although a certain preferred embodiment has been shown and described, it should be understood tliat many changes and modifications may be made therein without departing from the scope of the apQended claims.
Claims (3)
1. A high-frequency circuit device composed of hybrid ICs, comprising an insulated substrate, an active component fabricated on said insulated substrate and including a ground terminal for grounding high-frequency signal components, a first electrode fabricated on one surface of said insulated substrate and connected to said ground terminal, a ground conductor on said insulated substrate, a dielectric body placed on said ground conductor, a second electrode fabricated on an opposite surface of said insulated substrate in confronting relation to said ground conductor across said dielectric body and connected to said first electrode through a through hole defined in said insulated substrate, said ground terminal of said active component connected to ground high-frequency signal components through said first electrode, said through hole, said electrode, said dielectric body, and said ground conductor.
2. A high-frequency circuit device according to claim 1, wherein said dielectric body is annular in shape and has a full peripheral surface connected to said ground conductor.
3. A high-frequency circuit device according to claim 2, wherein said annular dielectric body has a substantially central through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000436367A CA1196109A (en) | 1983-09-09 | 1983-09-09 | High-frequency circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000436367A CA1196109A (en) | 1983-09-09 | 1983-09-09 | High-frequency circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1196109A true CA1196109A (en) | 1985-10-29 |
Family
ID=4126045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000436367A Expired CA1196109A (en) | 1983-09-09 | 1983-09-09 | High-frequency circuit device |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1196109A (en) |
-
1983
- 1983-09-09 CA CA000436367A patent/CA1196109A/en not_active Expired
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