CA1196080A - Methode de tri pour les diodes laser - Google Patents
Methode de tri pour les diodes laserInfo
- Publication number
- CA1196080A CA1196080A CA000447814A CA447814A CA1196080A CA 1196080 A CA1196080 A CA 1196080A CA 000447814 A CA000447814 A CA 000447814A CA 447814 A CA447814 A CA 447814A CA 1196080 A CA1196080 A CA 1196080A
- Authority
- CA
- Canada
- Prior art keywords
- laser
- laser diode
- diodes
- current
- burn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000447814A CA1196080A (fr) | 1984-02-20 | 1984-02-20 | Methode de tri pour les diodes laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000447814A CA1196080A (fr) | 1984-02-20 | 1984-02-20 | Methode de tri pour les diodes laser |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1196080A true CA1196080A (fr) | 1985-10-29 |
Family
ID=4127238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000447814A Expired CA1196080A (fr) | 1984-02-20 | 1984-02-20 | Methode de tri pour les diodes laser |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA1196080A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0981214A2 (fr) * | 1998-08-19 | 2000-02-23 | Nec Corporation | Emetteur optique |
-
1984
- 1984-02-20 CA CA000447814A patent/CA1196080A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0981214A2 (fr) * | 1998-08-19 | 2000-02-23 | Nec Corporation | Emetteur optique |
EP0981214A3 (fr) * | 1998-08-19 | 2003-07-16 | Nec Corporation | Emetteur optique |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4489477A (en) | Method for screening laser diodes | |
EP1396914B1 (fr) | Element laser a semi-conducteurs a faisceaux multiples | |
Shen et al. | 1500‐h continuous cw operation of double‐heterostructure GaInAsP/InP lasers | |
US6281032B1 (en) | Manufacturing method for nitride III-V compound semiconductor device using bonding | |
KR20090094091A (ko) | 반도체 디바이스 및 그 제조 방법과 반도체 디바이스를 포함하는 장치 | |
US11581707B2 (en) | Method of producing a laser diode bar and laser diode bar | |
EP0560358B1 (fr) | Système à laser | |
US4573255A (en) | Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process | |
Mizuishi et al. | Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasers | |
CA1196080A (fr) | Methode de tri pour les diodes laser | |
Lisak et al. | Bonding stress and reliability of high power GaAs-based lasers | |
US7138284B2 (en) | Method and apparatus for performing whole wafer burn-in | |
Endo et al. | Rapid degradation of InGaAsP/InP double heterostructure lasers due to< 110> dark line defect formation | |
JP2976812B2 (ja) | 半導体レーザの選別方法 | |
Hall et al. | Thermal behavior and stability of room‐temperature continuous Al x Ga1− x As‐GaAs quantum well heterostructure lasers grown on Si | |
US6351481B1 (en) | Diode laser with screening window and method of fabrication | |
JP2008091708A (ja) | 半導体発光モジュールの製造方法 | |
Zipfel | Light-Emitting-Diode Reliability | |
Pawlik et al. | Reduced temperature dependence of threshold of (Al, Ga) As lasers grown by molecular beam epitaxy | |
US20030164504A1 (en) | Light emitting diode device | |
Dutt et al. | " Reliability Of Components For Use In Fiber Optic Lans" Frederick W. Scholl, Michael H. Coden, Stephen Anderson | |
Rosiewicz et al. | Temperature-dependent lifetests of IRW lasers operating at 1.3 µm | |
JPS6129119A (ja) | 半導体装置およびその製造方法 | |
Linden et al. | Diode Laser Arrays With High Power In The 4 To 5 µm Infrared Region | |
JPS61269389A (ja) | 半導体レ−ザ装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEC | Expiry (correction) | ||
MKEX | Expiry |