CA1189177A - Laser a bande etroite planar a resistance de contact amelioree - Google Patents
Laser a bande etroite planar a resistance de contact amelioreeInfo
- Publication number
- CA1189177A CA1189177A CA000417600A CA417600A CA1189177A CA 1189177 A CA1189177 A CA 1189177A CA 000417600 A CA000417600 A CA 000417600A CA 417600 A CA417600 A CA 417600A CA 1189177 A CA1189177 A CA 1189177A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- laser
- diffusion
- window
- double heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000417600A CA1189177A (fr) | 1982-12-13 | 1982-12-13 | Laser a bande etroite planar a resistance de contact amelioree |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000417600A CA1189177A (fr) | 1982-12-13 | 1982-12-13 | Laser a bande etroite planar a resistance de contact amelioree |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1189177A true CA1189177A (fr) | 1985-06-18 |
Family
ID=4124140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000417600A Expired CA1189177A (fr) | 1982-12-13 | 1982-12-13 | Laser a bande etroite planar a resistance de contact amelioree |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA1189177A (fr) |
-
1982
- 1982-12-13 CA CA000417600A patent/CA1189177A/fr not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0185051B1 (fr) | Dispositifs a semiconducteurs avec heterostructures noyees | |
US5028563A (en) | Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays | |
EP0038085B1 (fr) | Diode laser à hétéro-structure profonde et procédé pour sa fabrication | |
EP0132081B1 (fr) | Laser à semi-conducteur | |
US5504768A (en) | Semiconductor laser device and method for manufacturing the same | |
EP0083697B1 (fr) | Laser à hétérostructure plane enterrée comportant deux gorges | |
US4366568A (en) | Semiconductor laser | |
CA1196714A (fr) | Laser a semiconducteurs stabilise | |
JP2686306B2 (ja) | 半導体レーザ装置とその製造方法 | |
US4377865A (en) | Semiconductor laser | |
US4943971A (en) | Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays | |
CA1044355A (fr) | Laser solide a pompage electrique avec retour distribue | |
CA1189177A (fr) | Laser a bande etroite planar a resistance de contact amelioree | |
US4888782A (en) | Semiconductor light emitting device | |
US4517674A (en) | Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser | |
US4530099A (en) | Planar narrow-stripe laser with improved charge carrier confinement | |
US5119388A (en) | Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays | |
EP0140645B1 (fr) | Dispositif à semi-conducteur émetteur de lumière | |
US4521887A (en) | W-shaped diffused stripe GaAs/AlGaAs laser | |
US4536940A (en) | Method of making a loss stabilized buried heterostructure laser | |
US4399542A (en) | Transverse junction stripe laser with distributed Bragg reflectors | |
CA1256550A (fr) | Semiconducteurs, ainsi que dispositifs et methodes pour leur fabrication | |
CA1189176A (fr) | Laser a bande etroite planar a confinement de porteur de charge ameliore | |
CA1150388A (fr) | Lasers a semiconducteur a grande puissance | |
GB2079524A (en) | Semiconductor laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEC | Expiry (correction) | ||
MKEX | Expiry |